10-EY12NMA011ME30-LS28F18T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-EY12NMA011ME30-LS28F18T |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总25页 (文件大小：8602K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EY12NMA011ME30-LS28F18T
datasheet
flowMNPC E2
1200 V / 11 mΩ
Features
flow E2 12 mm housing
● Three-level high efficient topology
● High frequency SIC MOSFET
● Compact and low inductive design
● Integrated NTC
Schematic
Target applications
● Power Supply
Types
● 10-EY12NMA011ME30-LS28F18T
Copyright Vincotech
1
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VDSS
Drain-source voltage
1200
110
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
360
A
Ptot
Total power dissipation
194
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Boost Switch
VDSS
Drain-source voltage
1200
110
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
360
A
Ptot
Total power dissipation
194
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,08
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
2
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
25
7,47
1,8
10
14
15
13,87(1)
rDS(on)
Drain-source on-state resistance
15
120
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,0345
25
25
25
2,5
30
3,6
750
57
V
15
0
0
nA
µA
Ω
1200
3
0,567
354
10071
387
24
Qg
Gate charge
-4/15
800
120
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
0
pF
V
60
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,49
K/W
Copyright Vincotech
3
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
39,73
36,37
35,82
19,2
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
td(off)
tf
Rise time
125
150
25
16,47
15,97
78,17
85,41
87,88
26,82
26,52
27,83
0,572
0,522
0,512
0,359
0,372
0,38
Rgon = 4 Ω
Rgoff = 4 Ω
Turn-off delay time
125
150
25
ns
350
95
Fall time
125
150
25
ns
QrFWD=0,834 µC
QrFWD=1,74 µC
QrFWD=2,05 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
mWs
mWs
A
Eoff
-4/15
125
150
25
60,2
IRRM
125
150
25
89,93
102,11
19,19
27,81
29,38
0,665
1,58
trr
125
150
25
ns
di/dt=6334 A/µs
di/dt=6942 A/µs
di/dt=7078 A/µs
Qr
600
80
125
150
25
μC
1,93
0,12
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,436
0,559
8825,36
8339,9
10224,85
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
4
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
25
7,47
1,8
10
14
15
13,87(1)
rDS(on)
Drain-source on-state resistance
15
120
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,0345
25
25
25
2,5
30
3,6
750
57
V
15
0
0
nA
µA
Ω
1200
3
0,567
354
10071
387
24
Qg
Gate charge
-4/15
800
120
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
0
pF
V
60
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,49
K/W
Copyright Vincotech
5
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
39,18
35,99
35,34
15,5
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
td(off)
tf
Rise time
125
150
25
13,53
13,12
91,9
Rgon = 4 Ω
Rgoff = 4 Ω
Turn-off delay time
125
150
25
101,19
103,17
16,26
18,5
ns
600
80
Fall time
125
150
25
ns
16,87
1,26
QrFWD=0,665 µC
QrFWD=1,58 µC
QrFWD=1,93 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
1,32
mWs
mWs
A
1,39
0,676
0,65
Eoff
-4/15
125
150
25
0,672
60,77
93,48
103,96
23,51
30,2
IRRM
125
150
25
trr
125
150
25
ns
32,02
0,834
1,74
di/dt=6062 A/µs
di/dt=6980 A/µs
di/dt=6940 A/µs
Qr
350
95
125
150
25
μC
2,05
0,172
0,428
0,511
7756,34
8647,86
9554,37
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
6
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
7
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Buck Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
250
250
200
150
100
50
VGS
:
-4 V
-2 V
0 V
200
150
100
50
1 V
3 V
5 V
7 V
9 V
11 V
13 V
15 V
17 V
19 V
21 V
0
-50
-100
-150
-200
-250
0
0
1
2
3
4
5
6
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 21 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
120
10
100
80
60
40
20
0
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,491
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
4,84E-02
1,15E-01
2,27E-01
7,54E-02
2,51E-02
6,00E+00
9,56E-01
9,87E-02
1,62E-02
1,45E-03
Copyright Vincotech
8
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Buck Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
15
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
9
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Boost Switch Characteristics
figure 6.
MOSFET
figure 7.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
250
250
200
150
100
50
VGS
:
-4 V
-2 V
0 V
200
150
100
50
1 V
3 V
5 V
7 V
9 V
11 V
13 V
15 V
17 V
19 V
21 V
0
-50
-100
-150
-200
-250
0
0
1
2
3
4
5
6
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 21 V in steps of 2 V
figure 8.
MOSFET
figure 9.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
120
10
100
80
60
40
20
0
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,491
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
4,84E-02
1,15E-01
2,27E-01
7,54E-02
2,51E-02
6,00E+00
9,56E-01
9,87E-02
1,62E-02
1,45E-03
Copyright Vincotech
10
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Boost Switch Characteristics
figure 10.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
15
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
11
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Thermistor Characteristics
figure 11.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
12
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Buck Switching Characteristics
figure 12.
MOSFET
figure 13.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
175
200
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
350
-4/15
4
V
V
Ω
Ω
125 °C
150 °C
350
-4/15
95
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 14.
MOSFET
figure 15.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
350
-4/15
4
V
V
Ω
125 °C
150 °C
350
-4/15
95
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Copyright Vincotech
13
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Buck Switching Characteristics
figure 16.
MOSFET
figure 17.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tr
-1
10
-1
10
td(off)
td(on)
tf
tf
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-4/15
4
°C
V
150
350
-4/15
95
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 18.
MOSFET
figure 19.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
350
-4/15
4
V
V
Ω
At
350
-4/15
95
V
25 °C
25 °C
VGS
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
14
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Buck Switching Characteristics
figure 20.
MOSFET
figure 21.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
200
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
-4/15
95
V
25 °C
25 °C
-4/15
4
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 22.
MOSFET
figure 23.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
50
IRM
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
ID(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
-4/15
4
V
V
Ω
At
350
-4/15
95
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
15
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Buck Switching Characteristics
figure 24.
MOSFET
figure 25.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
12000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
25
50
75
100
125
150
175
200
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
-4/15
4
V
At
350
V
V
A
25 °C
25 °C
V
125 °C
150 °C
-4/15
95
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 26.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
300
ID MAX
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
16
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Boost Switching Characteristics
figure 27.
MOSFET
figure 28.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
4
V
125 °C
150 °C
600
-4/15
80
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
4
figure 29.
MOSFET
figure 30.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
4
V
125 °C
150 °C
600
-4/15
80
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Ω
Copyright Vincotech
17
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Boost Switching Characteristics
figure 31.
MOSFET
figure 32.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(on)
tr
td(off)
td(on)
tr
tf
-2
10
-2
tf
10
-3
10
-3
10
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-4/15
4
°C
150
600
-4/15
80
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
Ω
Ω
V
V
A
VGS
Rgon
Rgoff
VGS
ID
4
figure 33.
MOSFET
figure 34.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
4
V
V
Ω
At
600
-4/15
80
V
25 °C
25 °C
VGS
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
18
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Boost Switching Characteristics
figure 35.
MOSFET
figure 36.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
4
V
At
600
-4/15
80
V
25 °C
25 °C
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 37.
MOSFET
figure 38.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
150
125
100
75
250
200
150
100
50
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
0,0
0
25
50
75
100
125
150
175
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
4
V
V
At
600
-4/15
80
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
Copyright Vincotech
19
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Boost Switching Characteristics
figure 39.
MOSFET
figure 40.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
17500
80000
70000
60000
50000
40000
30000
20000
10000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
15000
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-4/15
4
125 °C
150 °C
-4/15
80
125 °C
150 °C
Tj:
Tj:
Rgon
figure 41.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
300
ID MAX
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
20
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Switching Definitions
figure 42.
MOSFET
figure 43.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 44.
MOSFET
figure 45.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
21
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Switching Definitions
figure 46.
FWD
figure 47.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 48.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
22
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-EY12NMA011ME30-LS28F18T
10-EY12NMA011ME30-LS28F18T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
S11
G11
DC+
DC+
DC+
DC+
GND
GND
GND
GND
S14
G14
DC-
DC-
DC-
DC-
S12
G12
Therm1
Therm2
Ph
32
32
3,2
0
3,2
0
2
3
0
4
0
5
3,2
0
3,2
3,2
12,8
12,8
16
6
7
3,2
0
8
9
3,2
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
16
0
28,8
32
0
0
38,4
41,6
44,8
48
0
0
0
19,2
22,4
32
32
32
32
32
32
32
32
16
12,8
16
48
48
48
44,8
38,4
35,2
32
Ph
Ph
19,2
16
Ph
Ph
12,8
19,2
19,2
28,8
Ph
S13
G13
CC
Copyright Vincotech
23
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Pinout
DC+
3,4,5,6
T11
G11
2
S11
1
GND
Ph
7,8,9,10
21,22,23,24,25,26
T14
T13
T12
S14 G14
CC
29
G13 S13
11 12
28
27 G12
18
Rt
S12
17
Therm1
19
Therm2
20
DC-
13,14,15,16
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
T13, T14
Rt
MOSFET
MOSFET
1200 V
1200 V
10,67 mΩ
10,67 mΩ
Buck Switch
Boost Switch
Thermistor
Thermistor
Copyright Vincotech
24
12 Oct. 2021 / Revision 1
10-EY12NMA011ME30-LS28F18T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E2 packages see vincotech.com website.
Package data
Package data for flow E2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-EY12NMA011ME30-LS28F18T-D1-14
12 Oct. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
25
12 Oct. 2021 / Revision 1
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