10-EY12PMA015SC-L186A48T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 10-EY12PMA015SC-L186A48T |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总29页 (文件大小:8963K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-EY12PMA015SC-L186A48T
datasheet
flowPIM E2
1200 V / 15 A
Features
flow E2 12 mm housing
● Trench IGBT4 technology
● Standard industrial housing
● Optimized Rth(j-s) with Phase Change Material
● Built-in NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-EY12PMA015SC-L186A48T
Copyright Vincotech
1
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
23
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
45
A
Ptot
71
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
24
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
52
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
1200
23
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
45
A
Ptot
71
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
21
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
50
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
47
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
61
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,83
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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10-EY12PMA015SC-L186A48T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
15
25
5,3
5,8
6,3
V
V
25
1,58
1,87
2,14
2,21
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
120
None
890
30
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
20
0
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,35
K/W
25
83,4
84,2
84,4
28,2
29
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
29,8
191
Rgon = 32 Ω
Rgoff = 32 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
245,2
261,8
79,79
130,9
144,63
1,08
1,5
ns
±15
600
15
tf
125
150
25
ns
QrFWD=1,38 µC
QrFWD=2,47 µC
QrFWD=2,75 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,64
0,872
1,34
1,52
Eoff
125
150
Copyright Vincotech
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16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,35
1,84
1,78
2,05(1)
3,5
VF
IR
Forward voltage
15
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,82
K/W
25
10,86
13,02
13,38
286,15
430,28
471,02
1,38
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=583 A/µs
di/dt=497 A/µs
di/dt=454 A/µs
Qr
Recovered charge
±15
600
15
125
150
25
2,47
μC
2,75
0,517
0,961
1,07
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
55,42
45,46
39,49
(dirf/dt)max
125
150
Copyright Vincotech
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10-EY12PMA015SC-L186A48T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
15
25
5,3
5,8
6,3
V
V
25
1,58
1,87
2,14
2,21
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
120
None
890
30
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
20
0
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,35
K/W
25
29,8
27,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
26,8
32,6
tr
125
150
25
36,2
37,4
Rgon = 32 Ω
Rgoff = 32 Ω
280
td(off)
Turn-off delay time
Fall time
125
150
25
337,8
355,2
82,81
129,52
148,74
1,07
ns
0/15
600
15
tf
125
150
25
ns
QrFWD=1,18 µC
QrFWD=2 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,41
mWs
mWs
QrFWD=2,33 µC
1,54
0,909
1,37
Eoff
125
150
1,55
Copyright Vincotech
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16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,35
1,77
1,69
2,05(1)
2,7
VF
IR
Forward voltage
10
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,91
K/W
25
8,2
9,92
IRRM
Peak recovery current
125
150
25
A
10,26
319,26
465,55
526,52
1,18
trr
Reverse recovery time
125
150
25
ns
di/dt=368 A/µs
di/dt=419 A/µs
di/dt=394 A/µs
Qr
Recovered charge
0/15
600
15
125
150
25
2
μC
2,33
0,458
0,805
0,948
36,5
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
31,71
30,75
Copyright Vincotech
7
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,15
1,11
1,5(1)
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Vr = 1600 V
µA
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,15
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,347
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,66E-02
1,57E-01
6,53E-01
2,43E-01
1,08E-01
1,10E-01
2,27E+00
3,14E-01
6,33E-02
1,46E-02
3,36E-03
4,63E-04
Copyright Vincotech
9
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,825
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,17E-02
1,60E-01
7,42E-01
5,21E-01
3,30E-01
3,47E+00
4,37E-01
7,65E-02
2,19E-02
3,81E-03
Copyright Vincotech
11
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,347
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,66E-02
1,57E-01
6,53E-01
2,43E-01
1,08E-01
1,10E-01
2,27E+00
3,14E-01
6,33E-02
1,46E-02
3,36E-03
4,63E-04
Copyright Vincotech
12
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,909
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,90E-02
1,74E-01
8,07E-01
3,70E-01
2,79E-01
2,10E-01
3,61E+00
3,07E-01
4,87E-02
1,36E-02
3,22E-03
5,68E-04
Copyright Vincotech
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10-EY12PMA015SC-L186A48T
datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,149
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
8,29E-02
1,02E-01
4,20E-01
3,78E-01
1,08E-01
5,78E-02
7,59E+00
6,72E-01
1,19E-01
4,22E-02
4,04E-03
7,21E-04
Copyright Vincotech
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16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
32
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
td(off)
-1
10
-2
10
-3
10
tr
tf
-1
10
td(on)
tr
-2
10
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
32
°C
V
150
600
±15
15
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
19
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
700
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
0
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
Copyright Vincotech
20
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
32
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
tf
-1
10
-1
td(on)
10
tf
tr
tr
td(on)
-2
10
-2
10
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
32
°C
V
150
600
0/15
15
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
5,0
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
450
1750
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
400
dirr/dt ──────
350
300
250
200
150
100
50
0
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
Copyright Vincotech
24
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-EY12PMA015SC-L186A48T
10-EY12PMA015SC-L186A48T-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
ACIn2
ACIn2
ACIn1
ACIn1
DC+Rect
DC+Rect
DC-Rect
DC-Rect
G27
25,6
22,4
16
12,8
9,6
9,6
0
6,4
6,4
9,6
9,6
0
2
3
4
5
6
3,2
0
7
8
0
3,2
16
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0
19,2
22,4
25,6
28,8
32
DC-Br
G11
0
0
DC-1
DC-1
G13
0
0
0
35,2
38,4
41,6
44,8
48
DC-2
DC-2
G15
0
0
0
DC-3
DC-3
Therm1
Therm2
G16
0
9,6
19,2
28,8
32
32
32
32
32
32
32
32
32
32
22,4
22,4
9,6
48
48
48
48
Ph3
44,8
35,2
32
Ph3
G14
Ph2
28,8
19,2
16
Ph2
G12
Ph1
12,8
3,2
0
Ph1
ACIn3
ACIn3
DC+Inv
DC+Inv
Br
19,2
16
19,2
Copyright Vincotech
27
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Pinout
DC+Rect
5,6
DC+Inv
33,34
T12
T14
T16
D32
D34
D36
D11
D13
D15
28
G12
25
22
G16
D27
G14
Ph1
29,30
ACIn1
ACIn2
ACIn3
35
3,4
1,2
Ph2
26,27
Br
Ph3
23,24
31,32
T11
T13
T15
T27
D12
D14
D16
D31
D33
D35
11
14
17
9
G11
G13
G15
G27
Rt
7,8
10
DC-Br
12,13
DC-1
15,16
DC-2
18,19
DC-3
20
Therm1
21
DC-Rect
Therm2
---
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
1200 V
15 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
FWD
15 A
Inverter Diode
D15, D16
T27
IGBT
FWD
1200 V
1200 V
15 A
10 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
28 A
Rectifier Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
28
16 Apr. 2021 / Revision 4
10-EY12PMA015SC-L186A48T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E2 packages see vincotech.com website.
Package data
Package data for flow E2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Update characteristics of rectifier diode, leakage current
max value from 50 -> 100 uA
10-EY12PMA015SC-L186A48T-D4-14
16 Apr. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
16 Apr. 2021 / Revision 4
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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