10-EZ06PMA010SA-L923A38T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-EZ06PMA010SA-L923A38T |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总29页 (文件大小：8885K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EZ06PMA010SA-L923A38T
datasheet
flowPIM E1
600 V / 10 A
Features
flow E1 12 mm housing
● Trench Fieldstop IGBT3 technology
● Standard industrial housing
● Optimized Rth(j-s) with Phase Change Material
● Built-in NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-EZ06PMA010SA-L923A38T
Copyright Vincotech
1
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
18
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
48
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
19
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
41
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
600
18
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
48
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
600
19
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
41
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
47
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
61
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00015 25
5
5,8
6,5
V
V
25
10
1,1
1,5
1,8
1,9(1)
15
0
150
600
0
25
25
0,6
µA
nA
Ω
20
300
None
551
40
Cies
pF
pF
pF
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
Reverse transfer capacitance
17
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,99
K/W
25
73,6
73,2
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
11,6
tr
150
25
17,2
Rgon = 32 Ω
Rgoff = 32 Ω
109,4
129,4
100,24
118,41
0,156
0,212
0,231
0,303
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
300
10
tf
ns
150
25
QrFWD=0,485 µC
QrFWD=0,905 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
150
Copyright Vincotech
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28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,61
1,56
1,95(1)
27
VF
IR
Forward voltage
10
V
150
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,33
K/W
25
9,69
11,53
143,23
158,09
0,485
0,905
0,104
0,195
401,89
120,39
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
trr
ns
150
25
di/dt=1006 A/µs
di/dt=816 A/µs
Qr
±15
300
10
μC
150
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
(dirf/dt)max
150
Copyright Vincotech
5
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00015 25
5
5,8
6,5
V
V
25
10
1,1
1,5
1,8
1,9(1)
15
0
150
600
0
25
25
0,6
µA
nA
Ω
20
300
None
551
40
Cies
pF
pF
pF
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
Reverse transfer capacitance
17
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,99
K/W
25
23,6
21,4
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
29,6
tr
150
25
32,6
Rgon = 32 Ω
Rgoff = 32 Ω
229,4
252,8
87,92
101,85
0,301
0,447
0,287
0,406
td(off)
Turn-off delay time
Fall time
ns
150
25
0/15
400
10
tf
ns
150
25
QrFWD=0,404 µC
QrFWD=0,889 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
150
Copyright Vincotech
6
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,25
1,61
1,56
1,95(1)
27
VF
IR
Forward voltage
10
V
150
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,33
K/W
25
4,36
5,72
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
202,05
295,26
0,404
0,889
0,109
0,236
14,19
35,51
trr
ns
150
25
di/dt=321 A/µs
di/dt=269 A/µs
Qr
0/15
400
10
μC
150
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
(dirf/dt)max
150
Copyright Vincotech
7
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,15
1,11
1,5(1)
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Vr = 1600 V
µA
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,15
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0,0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
12
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,987
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,44E-01
5,01E-01
6,56E-01
4,66E-01
2,20E-01
7,09E-01
9,03E-02
2,79E-02
5,71E-03
9,71E-04
Copyright Vincotech
9
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,328
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,21E-02
2,22E-01
9,31E-01
5,61E-01
3,70E-01
1,62E-01
3,78E+00
2,71E-01
4,55E-02
8,74E-03
1,93E-03
3,48E-04
Copyright Vincotech
11
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0,0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
12
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,987
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,44E-01
5,01E-01
6,56E-01
4,66E-01
2,20E-01
7,09E-01
9,03E-02
2,79E-02
5,71E-03
9,71E-04
Copyright Vincotech
12
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,328
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,21E-02
2,22E-01
9,31E-01
5,61E-01
3,70E-01
1,62E-01
3,78E+00
2,71E-01
4,55E-02
8,74E-03
1,93E-03
3,48E-04
Copyright Vincotech
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10-EZ06PMA010SA-L923A38T
datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,149
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
8,29E-02
1,02E-01
4,20E-01
3,78E-01
1,08E-01
5,78E-02
7,59E+00
6,72E-01
1,19E-01
4,22E-02
4,04E-03
7,21E-04
Copyright Vincotech
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28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eon
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
300
±15
32
V
V
Ω
Ω
150 °C
300
±15
10
V
V
A
150 °C
Rgon
Rgoff
32
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
32
V
V
Ω
150 °C
300
±15
10
V
V
A
150 °C
Copyright Vincotech
17
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
td(off)
td(on)
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
-3
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
300
±15
32
°C
V
150
300
±15
10
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
R
goff(Ω)
25 °C
150 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
32
V
V
Ω
150 °C
300
±15
10
V
V
A
Copyright Vincotech
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28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
32
V
V
Ω
150 °C
300
±15
10
V
V
A
150 °C
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
5,0
IRM
IRM
2,5
0,0
0,0
0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
32
V
V
Ω
150 °C
300
±15
10
V
V
A
150 °C
Copyright Vincotech
19
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
1500
4500
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1250
1000
750
500
250
0
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
32
V
V
Ω
150 °C
300
±15
10
V
V
A
150 °C
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
32
°C
Rgon
Rgoff
=
=
Ω
Ω
32
Copyright Vincotech
20
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
32
V
V
Ω
Ω
150 °C
400
0/15
10
V
V
A
150 °C
Rgon
Rgoff
32
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
32
V
V
Ω
150 °C
400
0/15
10
V
V
A
150 °C
Copyright Vincotech
21
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
td(on)
tr
-1
10
tf
tf
tr
-2
10
td(on)
-2
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
32
°C
V
150
400
0/15
10
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
R
goff(Ω)
25 °C
150 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
32
V
V
Ω
150 °C
400
0/15
10
V
V
A
Copyright Vincotech
22
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
32
V
V
Ω
150 °C
400
0/15
10
V
V
A
150 °C
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
7
6
5
4
3
2
1
0
12
10
8
IRM
IRM
6
4
IRM
IRM
2
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
32
V
V
Ω
150 °C
400
0/15
10
V
V
A
150 °C
Copyright Vincotech
23
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
400
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
350
300
250
200
150
100
50
dirr/dt ──────
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
32
V
V
Ω
150 °C
400
0/15
10
V
V
A
150 °C
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
32
°C
Rgon
Rgoff
=
=
Ω
Ω
32
Copyright Vincotech
24
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-EZ06PMA010SA-L923A38T
10-EZ06PMA010SA-L923A38T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
Br
32
25,6
22,4
19,2
16
2
0
DC-Br
G27
3
0
4
0
DC-Rect
G15
5
0
6
12,8
9,6
0
DC-3
G13
7
0
8
6,4
0
DC-2
G11
9
3,2
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
0
0
DC-1
Ph1
0
25,6
25,6
25,6
25,6
25,6
25,6
25,6
19,2
16
3,2
G12
9,6
Ph2
12,8
19,2
22,4
32
G14
Ph3
G16
ACIn1
ACIn2
Therm1
Therm2
ACIn3
DC+Inv
DC+Rect
25,6
19,2
16
16
25,6
22,4
25,6
12,8
6,4
6,4
Copyright Vincotech
27
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Pinout
DC+Rect
23
DC+Inv
22
T12
T14
T16
D11
G14
D13
D15
D32
D34
D36
D27
G12
12
G16
14
16
ACIn1
17
Ph1
11
ACIn2
18
Br
1
Ph2
13
ACIn3
21
Ph3
15
D31
D33
D35
T27
T11
T13
T15
D12
D14
D16
G27
3
G11
9
G13
7
G15
5
Rt
DC-Rect
4
DC-Br
2
DC-1
10
DC-2
8
DC-3
6
Therm1
19
Therm2
20
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
10 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
FWD
600 V
10 A
D15, D16
T27
IGBT
FWD
600 V
600 V
10 A
10 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
NTC
1600 V
28 A
Rectifier Diode
Thermistor
Rt
Copyright Vincotech
28
28 May. 2021 / Revision 3
10-EZ06PMA010SA-L923A38T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E1 packages see vincotech.com website.
Package data
Package data for flow E1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New datasheet format
Update characteristics of rectifier diode, leakage current
max value from 50 -> 100 uA
10-EZ06PMA010SA-L923A38T-D3-14
28 May. 2021
Remove 125°C dynamic characteristic from Brake
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
28 May. 2021 / Revision 3
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