10-EZ126PB075ME-LS17F08T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-EZ126PB075ME-LS17F08T |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总15页 (文件大小：5704K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EZ126PB075ME-LS17F08T
datasheet
flowPACK E1 SiC
1200 V / 75 mΩ
Features
flow E1 12 mm housing
● C3M™ SiC MOSFET technology
● Standard industrial housing
● Low inductive design
● Optimized Rth(j-s) with Phase Change Material
● Built-in NTC
Schematic
Target applications
● Elevator Drives
● Industrial Drives
● Servo Drives
● UPS
Types
● 10-EZ126PB075ME-LS17F08T
Copyright Vincotech
1
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VDSS
Drain-source voltage
1200
21
V
A
ID
Drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
Peak drain current
tp limited by Tjmax
Tj = Tjmax
80
A
Ptot
Total power dissipation
Gate-source voltage
Maximum Junction Temperature
57
W
V
VGSS
-4 / 15
175
Tjmax
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
8,74
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
2
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inverter Switch
Static
25
76
90
rDS(on)
Drain-source on-state resistance
15
20
125
150
105
116
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,005
25
25
25
1,7
2,5
10
4
V
15
0
0
250
100
nA
µA
Ω
1200
1
10,5
54
Qg
Gate charge
-4/15
800
20
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
1350
58
f = 1 Mhz
0
0
1000
pF
V
3
10
4,5
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,67
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic Switch
25
14,08
12,48
12,32
8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
7,68
8,16
Rgon = 4 Ω
Rgoff = 4 Ω
45,12
52,16
53,92
7,52
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
600
30
tf
125
150
25
7,5
ns
7,35
QrFWD=0,142 µC
QrFWD=0,307 µC
QrFWD=0,394 µC
0,228
0,26
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,294
0,147
0,157
0,161
Eoff
125
150
Copyright Vincotech
3
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Dynamic Diode
25
23,58
30,35
36,48
10,78
16,16
17,54
0,142
0,307
0,394
0,046
0,122
0,161
4733
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=4752 A/µs
di/dt=5121 A/µs
di/dt=5299 A/µs
Qr
Recovered charge
0/15
600
30
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
6414
9935
Thermistor
R
ΔR/R
P
Rated resistance
25
5
kΩ
%
Deviation of R100
R100 = 493 Ω
100
-5
5
Power dissipation
Power dissipation constant
B-value
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
Copyright Vincotech
4
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
80
50
VGS
:
-4 V
-2 V
0 V
25
0
2 V
60
40
20
0
4 V
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
-25
-50
-75
-100
0,0
2,5
5,0
7,5
10,0
12,5
-12,5 -10,0 -7,5 -5,0 -2,5 0,0
2,5
5,0
7,5 10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
16
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
35
10
30
25
20
15
10
5
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,67
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
8,03E-02
2,75E-01
7,88E-01
3,82E-01
1,44E-01
2,10E+00
1,82E-01
3,22E-02
4,89E-03
5,88E-04
Copyright Vincotech
5
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switch Characteristics
figure 5.
MOSFET
Safe operating area
IC = f(VCE
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
16
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
6
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switching Characteristics
figure 6.
MOSFET
figure 7.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
4
V
V
Ω
Ω
125 °C
150 °C
600
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 8.
MOSFET
figure 9.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
0/15
4
V
V
Ω
125 °C
150 °C
600
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Copyright Vincotech
7
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switching Characteristics
figure 10.
MOSFET
figure 11.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
-1
10
-1
10
td(off)
td(off)
td(on)
tr
td(on)
tr
-2
10
-2
10
tf
tf
-3
10
-3
10
0
10
20
30
40
50
60
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
4
°C
V
150
600
0/15
30
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 12.
MOSFET
figure 13.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
VGS
0/15
4
125 °C
150 °C
0/15
30
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
8
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switching Characteristics
figure 14.
MOSFET
figure 15.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
0/15
30
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 16.
MOSFET
figure 17.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
0/15
4
V
V
Ω
At
600
0/15
30
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
02 Jun. 2020 / Revision 2
Copyright Vincotech
9
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switching Characteristics
figure 18.
MOSFET
figure 19.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
12000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
0
10
20
30
40
50
60
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
0/15
4
125 °C
150 °C
0/15
30
125 °C
150 °C
Tj:
Tj:
Rgon
figure 20.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
45
ID MAX
40
35
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
10
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switching Definitions
figure 21.
MOSFET
figure 22.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 23.
MOSFET
figure 24.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
11
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Inverter Switching Definitions
figure 25.
FWD
figure 26.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 27.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
12
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-EZ126PB075ME-LS17F08T
10-EZ126PB075ME-LS17F08T-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G15
32
28,8
19,2
16
0
2
0
S15
3
0
G13
4
0
S13
5
3,2
0
0
S11
6
0
G11
7
32
6,4
6,4
6,4
12,8
12,8
12,8
19,2
19,2
19,2
25,6
25,6
25,6
25,6
25,6
25,6
25,6
25,6
Ph3
8
19,2
0
Ph2
9
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
32
DC-3
DC-2
DC-1
DC+
DC+
DC+
Therm2
Therm1
G16
19,2
0
28,8
19,2
9,6
32
28,8
22,4
19,2
12,8
9,6
3,2
0
S16
G14
S14
G12
S12
Copyright Vincotech
13
02 Jun. 2020 / Revision 2
10-EZ126PB075ME-LS17F08T
datasheet
Pinout
DC+
13,14,15
T12
T14
T16
G12
S12
G14
G16
18
S16
19
20
21
22
23
S14
Ph1
9
Ph2
8
Ph3
7
T11
T13
T15
G11
S11
G13
S13
G15
1
6
5
3
4
S15
2
Rt
DC-1
12
DC-2
11
DC-3
10
Therm1
17
Therm2
16
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
T15, T16
MOSFET
1200 V
75 mΩ
Inverter Switch
Thermistor
Rt
Thermistor
02 Jun. 2020 / Revision 2
Copyright Vincotech
14
10-EZ126PB075ME-LS17F08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E1 packages see vincotech.com website.
Package data
Package data for flow E1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Change of Product Line
1
10-EZ126PB075ME-LS17F08T-D2-14
02 Jun. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
15
02 Jun. 2020 / Revision 2
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10-EZ12PNA010M7-L927C78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-EZ12PNA010SC-L927C08T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-EZ12PNA015M7-L928C78T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-EZ12PNA015SC-L928C08T
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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