10-F0122PA150SC-P990F09

FZ12 / F0122PA150SC

preliminary datasheet

flowPHASE0

1200V/150A

Features

flow0 housing

● Trench Fieldstop IGBT⁴technology

● 2-clip housing in 12mm and 17mm height

● Compact and low inductance design

Target Applications

Schematic

● Motor Drive

● UPS

Types

● FZ122PA150SC

● F0122PA150SC

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Inverter Transistor

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

1200

V

A

T_h=80°C

92

T_j=T_jmax

T_c=80°C

119

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

450

A

T_h=80°C

T_c=80°C

172

260

W

V

V_GE

±20

t_SC

T_j≤150°C

10

μs

V_CC

V_GE=15V

800

V

T_jmax

Maximum Junction Temperature

175

°C

Inverter Diode

T_j=25°C

V_RRM

I_F

I_FRM

P_tot

Peak Repetitive Reverse Voltage

DC forward current

1200

V

A

T_h=80°C

T_c=80°C

75

T_j=T_jmax

101

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

300

A

T_h=80°C

T_c=80°C

106

160

W

°C

T_jmax

175

Thermal Properties

T_stg

T_op

Storage temperature

-40…+125

°C

Operation temperature under switching condition

-40…+(Tjmax - 25)

copyright Vincotech

1

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Insulation Properties

Insulation voltage

Creepage distance

Clearance

V_is

t=2s

DC voltage

4000

V

min 12,7

mm

copyright Vincotech

2

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V_r[V] or

V_GE[V] or

I_C[A] or

I_F[A] or

I_D[A]

V

_CE[V] or

_DS[V]

T_j

Min

Max

V

_GS[V]

V

Inverter Transistor

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

5

5,8

6,5

2,4

V_GE(th)V_CE=V_GE

Gate emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current incl. Diode

Gate-emitter leakage current

Integrated Gate resistor

Turn-on delay time

0,006

150

V

1,4

1,98

2,43

V_CE(sat)

I_CES

I_GES

R_gint

t_d(on)

t_r

15

0

0,05

700

1200

0

mA

nA

Ω

20

5

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

185

204

28,2

37,2

305

387

79

116

8,89

14,15

9,11

14,92

Rise time

ns

t_d(off)

t_f

Turn-off delay time

Rgoff=2 Ω

Rgon=2 Ω

±15

600

150

Fall time

E_on

Turn-on energy loss per pulse

Turn-off energy loss per pulse

Input capacitance

mWs

pF

E_off

C_ies

C_oss

C_rss

Q_Gate

R_thJH

R_thJC

9300

Output capacitance

f=1MHz

0

25

Tj=25°C

580

Reverse transfer capacitance

Gate charge

510

±15

960

150

579

nC

Thermal grease

thickness≤50um

λ = 1 W/mK

Thermal resistance chip to heatsink per chip

Thermal resistance chip to case per chip

0,553

K/W

Inverter Diode

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

1

1,91

183,3

209,5

127

2,4

V_F

I_RRM

t_rr

Diode forward voltage

150

V

A

Peak reverse recovery current

Reverse recovery time

ns

298

13,9

26,6

3265

2538

5,21

10,45

Q_rr

Reverse recovered charge

Peak rate of fall of recovery current

Reverse recovered energy

Thermal resistance chip to heatsink per chip

Thermal resistance chip to case per chip

Rgon=2 Ω

±15

600

μC

di(rec)max

/dt

A/μs

mWs

Erec

R_thJH

R_thJC

Thermal grease

thickness≤50um

λ = 1 W/mK

0,90

K/W

copyright Vincotech

3

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 1

Output inverter IGBT

Figure 2

Output inverter IGBT

Typical output characteristics

I

_C= f(V_CE

)

I_C= f(V_CE)

450

375

300

225

150

75

450

375

300

225

150

75

0

V

_CE(V)

V_CE(V)

0

1

2

3

4

5

1

2

3

4

5

At

t_p=

T_j=

t_p=

350

25

μs

350

150

μs

T_j=

°C

V_GEfrom

7 V to 17 V in steps of 1 V

Figure 3

Typical transfer characteristics

Output inverter IGBT

Figure 4

Output inverter FRED

Typical diode forward current as

a function of forward voltage

I_F= f(V_F)

I_C= f(V_GE

)

150

450

375

300

225

150

75

T_j= 25°C

120

90

T_j= T_jmax-25°C

60

T_j= T_jmax-25°C

30

T_j= 25°C

0

V_GE(V)

V_F(V)

2

4

6

8

10

12

0

0,8

1,6

2,4

3,2

4

At

t_p=

350

10

μs

350

μs

V_CE

=

V

copyright Vincotech

4

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 5

Output inverter IGBT

Figure 6

Output inverter IGBT

Typical switching energy losses

as a function of collector current

E = f(I_C)

Typical switching energy losses

as a function of gate resistor

E = f(R_G)

30

25

20

15

10

5

30

25

20

15

10

5

E_{on High T}

E_{off High T}

E_{off Low T}

E_{on Low T}

E_{off High T}

E_{off Low T}

0

I

_C(A)

R _G( Ω )

0

50

100

150

200

250

300

0

2

4

6

8

10

With an inductive load at

T_j=

°C

V

25/150

V_CE

V_GE

=

V_CE

V_GE

I_C=

=

600

±15

2

V

Ω

600

±15

150

V

R_gon

R_goff

=

A

2

Figure 7

Output inverter IGBT

Figure 8

Output inverter IGBT

Typical reverse recovery energy loss

as a function of collector current

Typical reverse recovery energy loss

as a function of gate resistor

E_rec= f(R_G)

E_rec= f(I_C)

15

E_rec

12

9

12

E_rec

T_j= T_jmax-25°C

9

6

3

0

T_j= 25°C

E_rec

6

T_j= 25°C

E_rec

3

0

I _C(A)

R _G( Ω )

50

100

150

200

250

300

0

2

4

6

8

10

With an inductive load at

T_j=

V_CE

V_GE

T_j=

V_CE

V_GE

I_C=

25/150

600

±15

2

°C

V

25/150

600

°C

V

=

V

±15

V

R_gon

=

Ω

150

A

copyright Vincotech

5

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 9

Output inverter IGBT

Figure 10

Output inverter IGBT

Typical switching times as a

function of collector current

t = f(I_C)

Typical switching times as a

function of gate resistor

t = f(R_G)

1

t_doff

t_don

t_f

t_don

0,1

t_f

t_r

0,01

0,001

I _C(A)

R _G( Ω )

0

50

100

150

200

250

300

0

2

4

6

8

10

With an inductive load at

T_j=

V_CE

V_GE

T_j=

V_CE

V_GE

I_C=

150

600

±15

2

°C

150

600

±15

150

°C

V

=

V

Ω

V

R_gon

R_goff

=

A

2

Figure 11

Output inverter FRED

Figure 12

Output inverter FRED

Typical reverse recovery time as a

function of collector current

Typical reverse recovery time as a

function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,5

t_rr

0,4

0,3

0,2

0,1

0,4

0,3

0,2

0,1

T_j= T_jmax-25°C

t_rr

T_j= 25°C

t_rr

0

I _C(A)

2

4

6

8

R _{g on}( Ω )

10

50

100

150

200

250

300

At

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

600

±15

2

°C

25/150

°C

=

V

Ω

600

150

±15

V

A

V

R_gon

=

V_GE=

copyright Vincotech

6

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 13

Output inverter FRED

Figure 14

Output inverter FRED

Typical reverse recovery charge as a

function of collector current

Typical reverse recovery charge as a

function of IGBT turn on gate resistor

Q

_rr= f(I_C)

Q_rr= f(R_gon)

40

Q_rr

32

24

16

8

32

24

16

8

Q_rr

T_j= T_jmax-25°C

Q_rr

T_j= 25°C

0

I _C(A)

R _{g on}( Ω)

50

100

150

200

250

300

2

4

6

8

10

At

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

600

±15

2

°C

V

25/150

°C

V

=

600

150

±15

V

A

R_gon

=

V_GE=

Ω

V

Figure 15

Output inverter FRED

Figure 16

Output inverter FRED

Typical reverse recovery current as a

function of collector current

Typical reverse recovery current as a

function of IGBT turn on gate resistor

I_RRM= f(I_C)

I_RRM= f(R_gon)

300

250

200

150

100

50

300

I_RRM

250

200

I_RRM

T_j= T_jmax-25°C

T_j= T_jmax- 25°C

I_RRM

T_j= 25°C

150

100

50

T_j= 25°C

0

I

_C(A)

R _gon( Ω )

0

50

100

150

200

250

300

0

2

4

6

8

10

At

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

600

±15

2

°C

V

25/150

600

°C

V

=

V

150

A

R_gon

=

V_GE=

Ω

±15

V

copyright Vincotech

7

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 17

Output inverter FRED

Figure 18

Output inverter FRED

Typical rate of fall of forward

and reverse recovery current as a

function of collector current

dI₀/dt,dI_rec/dt = f(I_C)

Typical rate of fall of forward

and reverse recovery current as a

function of IGBT turn on gate resistor

dI₀/dt,dI_rec/dt = f(R_gon

)

10000

dI₀/dt

μ

dI₀/dt

dI_rec/dt

8000

6000

4000

2000

dI_o/dt_{Low T}

6000

T_j= 25°C

di₀/dt_{High T}

dI_rec/dt_{Low T}

4000

2000

T_j= T_jmax- 25°C

dI_rec/dt_{High T}

0

I _C(A)

R _gon( Ω )

0

50

100

150

200

250

300

0

2

4

6

8

10

At

T_j=

V_CE

V_GE

T_j=

V_R=

I_F=

25/150

600

±15

2

°C

V

25/150

600

°C

V

=

V

150

A

R_gon

=

V_GE=

Ω

±15

V

Figure 19

Output inverter IGBT

Figure 20

Output inverter FRED

IGBT transient thermal impedance

as a function of pulse width

FRED transient thermal impedance

as a function of pulse width

Z_thJH= f(t_p)

10⁰

10^-1

D = 0,5

0,2

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0.000

0,05

0,02

0,01

0,005

0.000

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹1

t _p(s)

1

10^-4

10^-3

10^-2

10^-1

10⁰

101

At

t_p/ T

0,55

t_p/ T

0,90

D =

R_thJH

D =

=

R_thJH=

K/W

IGBT thermal model values

FRED thermal model values

R (C/W)

0,04

Tau (s)

5,0E+00

9,8E-01

2,3E-01

3,1E-02

4,1E-03

3,6E-04

R (C/W)

0,03

Tau (s)

9,4E+00

1,1E+00

1,9E-01

3,8E-02

6,6E-03

4,3E-04

0,13

0,16

0,31

0,50

0,06

0,14

0,01

0,04

0,01

0,03

copyright Vincotech

8

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 21

Output inverter IGBT

Figure 22

Output inverter IGBT

Power dissipation as a

function of heatsink temperature

Collector current as a

function of heatsink temperature

P_tot= f(T_h)

I_C= f(T_h)

400

150

120

90

60

30

0

320

240

160

80

0

T _h

(

^oC)

T _h(

^oC)

50

100

150

200

0

50

100

150

200

At

T_j=

V_GE

175

°C

175

15

°C

V

=

Figure 23

Output inverter FRED

Figure 24

Forward current as a

Output inverter FRED

Power dissipation as a

function of heatsink temperature

P_tot= f(T_h)

I_F= f(T_h)

200

120

100

80

60

40

20

0

160

120

80

40

0

T _h

(

^oC)

T _h(

^oC)

50

100

150

200

0

50

100

150

200

At

T_j=

175

°C

175

°C

copyright Vincotech

9

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Output Inverter

Figure 25

Output inverter IGBT

Figure 26

Output inverter IGBT

Gate voltage vs Gate charge

Safe operating area as a function

of collector-emitter voltage

I_C= f(V_CE

)

V_GE= f(Q_GE

)

10³

16

10uS

14

12

10

8

100uS

10²

240V

960V

1mS

10mS

DC

100mS

10¹

10⁰

6

4

10^-1

2

0

50 100 150 200 250 300 350 400 450 500 550 600 650 700 750

Q _g(nC)

10⁰

10¹

10²

10³

V_CE(V)

At

I_C

=

D =

T_h=

150

A

single pulse

80

ºC

V

V_GE

T_j=

=

±15

T_jmax

ºC

copyright Vincotech

10

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Switching Definitions Output Inverter

General conditions

T_j

=

150 °C

2 Ω

R_gon

R_goff

2 Ω

Figure 1

Output inverter IGBT

Figure 2

Output inverter IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff

Turn-on Switching Waveforms & definition of tdon, t_Eon

(t_Eoff= integrating time for E_off

)

(t_Eon= integrating time for E_on)

250

%

140

%

I_C

120

t_doff

V_CE

210

170

100

V_{GE 90%}

V_{CE 90%}

80

60

40

20

0

130

I_C

V_CE

t_Eoff

90

V_GE

t_don

50

I_{C 1%}

V_GE

I_C10%

V_{CE 3%}

V_GE10%

10

-20

t_Eon

-40

-30

-0,2

0

0,2

0,4

0,6

0,8

1

2,8

2,95

3,1

3,25

3,4

3,55

3,7

time(us)

time (us)

V_GE(0%) =

-15

V

-15

V

_GE(100%) =

V_GE(100%) =

V_C(100%) =

I_C(100%) =

15

V

15

V

V_C(100%) =

I_C(100%) =

600

150

0,39

0,78

V

600

150

0,20

0,52

V

A

t_doff

t_Eoff

=

t_don

t_Eon

=

μs

Figure 3

Output inverter IGBT

Figure 4

Output inverter IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

140

250

%

fitted

I_C

%

120

210

170

V_CE

100

80

60

40

20

0

I_{C 90%}

130

V_CE

I_C

60%

I_C90%

90

50

I_{C 40%}

tr

I_C10%

Ic

t_f

10

I_C10%

-20

-30

0,25

0,3

0,35

0,4

0,45

0,5

0,55

time (us)

2,95

3,1

3,25

3,4

3,55

3,7

time(us)

V_C(100%) =

I_C(100%) =

t_f=

V_C(100%) =

I_C(100%) =

t_r=

600

150

0,12

V

600

V

A

150

A

μs

0,04

μs

copyright Vincotech

11

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Switching Definitions Output Inverter

Figure 5

Output inverter IGBT

Figure 6

Output inverter IGBT

Turn-off Switching Waveforms & definition of t_Eoff

Turn-on Switching Waveforms & definition of t_Eon

120

180

%

P_on

E_off

P_off

100

150

120

90

80

60

40

E_on

60

30

20

V_{GE 10%}

V_CE

3%

V_{GE 90%}

0

t_Eon

t_Eoff

I_C1%

-30

-20

2,9

3

3,1

3,2

3,3

3,4

3,5

3,6

3,7

time(us)

-0,2

-0,05

0,1

0,25

0,4

0,55

0,7

0,85

time (us)

P_off(100%) =

_off(100%) =

t_Eoff

P_on(100%) =

E_on(100%) =

90,25

kW

mJ

μs

90,25

kW

mJ

μs

E

14,92

0,78

14,15

0,52

=

t_Eon=

Figure 7

Output inverter FRED

Figure 8

Output inverter IGBT

Gate voltage vs Gate charge (measured)

Turn-off Switching Waveforms & definition of t_rr

20

120

%

15

10

5

I_d

80

40

trr

0

V_d

0

I_RRM10%

-40

-80

-120

-160

-5

-10

-15

-20

I_RRM90%

fitted

I_RRM100%

3,1

3,25

3,4

3,55

3,7

3,85

-250

0

250

500

750

1000

time(us)

Qg (nC)

V_GEoff

V_GEon

=

V_d(100%) =

I_d(100%) =

-15

15

V

600

150

-210

0,30

V

A

V_C(100%) =

I_C(100%) =

Q_g=

I_RRM(100%) =

600

150

V

A

t_rr

=

A

μs

8359,90

nC

copyright Vincotech

12

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Switching Definitions Output Inverter

Figure 9

Output inverter FRED

Figure 10

Output inverter FRED

Turn-on Switching Waveforms & definition of t_Qrr

(t_Qrr= integrating time for Q_rr)

Turn-on Switching Waveforms & definition of t_Erec

(t_Erec= integrating time for E_rec

)

150

120

%

E_rec

%

Q_rr

100

I_d

80

60

40

20

0

50

t_Qrr

tE_rec

0

-50

P_rec

-100

-150

-20

3

3,2

3,4

3,6

3,8

4

4,2

4,4

time(us)

3

3,2

3,4

3,6

3,8

4

4,2

4,4

time(us)

I_d(100%) =

P_rec(100%) =

E_rec(100%) =

150

A

90,25

kW

mJ

μs

Q_rr(100%) =

26,55

0,88

μC

μs

10,45

0,88

t_Qrr

=

t_Erec=

copyright Vincotech

13

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking

Version

Ordering Code

in DataMatrix as

in packaging barcode as

without thermal paste 12mm housing

without thermal paste 17mm housing

10-FZ122PA150SC-P990F08

10-F0122PA150SC-P990F09

P990F08

P990F09

P990F08

P990F09

Outline

Pinout

copyright Vincotech

14

Revision: 1

FZ12 / F0122PA150SC

preliminary datasheet

PRODUCT STATUS DEFINITIONS

Datasheet Status

Product Status

Definition

This datasheet contains the design specifications for

product development. Specifications may change in any

manner without notice. The data contained is exclusively

intended for technically trained staff.

Target

Formative or In Design

First Production

This datasheet contains preliminary data, and

supplementary data may be published at a later date.

Vincotech reserves the right to make changes at any time

without notice in order to improve design. The data

contained is exclusively intended for technically trained

staff.

Preliminary

This datasheet contains final specifications. Vincotech

reserves the right to make changes at any time without

notice in order to improve design. The data contained is

exclusively intended for technically trained staff.

Final

Full Production

DISCLAIMER

The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested

values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve

reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit

described herein; neither does it convey any license under its patent rights, nor the rights of others.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written

approval of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech

15

Revision: 1


型号：	10-F0122PA150SC-P990F09
厂家：	VINCOTECH
描述：	Insulated Gate Bipolar Transistor 栅
文件：	总15页 (文件大小：379K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

10-F0122PA150SC-P990F09 [VINCOTECH]

相关型号：

10-F0122PB100SC02-M819F09

10-F0122PB100SC03-M819F19

10-F0127PA008SC-L156E09

10-F0127PA025SC-L159E09

10-F012NME080SH-M910F09

10-F012NME080SH-M910F09Y

10-F012PMA005M7-P848A29

10-F012PMA010M7-P849A29

10-F012PMA015M7-P840A29

10-F012PNA005M7-P848C29

10-F012PNA015M7-P840C29

10-F0186RA040RW-L617H09