10-F012PNA015M7-P840C29 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-F012PNA015M7-P840C29 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总19页 (文件大小：1632K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F012PNA015M7-P840C29
datasheet
flowPIM 0
1200 V / 15 A
Features
flow 0 17 mm housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Built-in NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-F012PNA015M7-P840C29
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
15
V
A
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
30
A
Ts = 80 °C
60
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
1
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
15
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj limited by Tjmax
30
A
Tj = Tjmax
Ts = 80 °C
45
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
25
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
200
200
44
A
50 Hz Single Half Sine Wave
tp = 10 ms
Tj = 150 °C
Ts = 80 °C
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-F012PNA015M7-P840C29
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0015 25
25
5,4
6,0
6,6
V
V
1,70
1,95
2,01
2,15
VCEsat
Collector-emitter saturation voltage
15
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
60
µA
nA
Ω
20
25
500
none
2900
120
34
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
15
110
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,60
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
176
174
43
48
191
218
119
127
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Rgon = 32 Ω
Rgoff = 32 Ω
ns
Turn-off delay time
Fall time
±15
600
15
1,548
2,008
0,925
Qr
Qr
= 1,5 μC
= 2,6 μC
FWD
Eon
Turn-on energy (per pulse)
FWD
mWs
Eoff
Turn-off energy (per pulse)
150
1,322
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10-F012PNA015M7-P840C29
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,63
1,74
1,73
2,1
30
VF
IR
125
150
Forward voltage
15
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,11
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
11
12
265
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
423
di/dt = 293 A/μs
di/dt = 244 A/μs
1,549
2,592
0,488
0,938
92
±15
600
15
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
52
Rectifier Diode
Static
25
1,22
1,21
VF
IR
Forward voltage
Reverse leakage current
Thermal
25
V
125
1600
25
50
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Copyright Vincotech
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10-F012PNA015M7-P840C29
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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10-F012PNA015M7-P840C29
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
50
)
VCE
= f(
50
)
VCE
I C
I C
VGE
:
7
V
V
V
I
I
I
I
I
I
I
I
8
9
40
30
20
10
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
40
30
20
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
Tj:
Tj =
from
7 V to 17 V in steps of 1 V
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
= f(
15
)
VGE
= f( )
Z th(j-s) tp
I C
101
I
I
I
I
12
9
Z
Z
Z
Z
100
6
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
3
10-2
10-5
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
10
12
VG E (V)
=
100
10
μs
V
25 °C
125 °C
150 °C
=
D
tp
tp / T
=
:
Tj
=
R th(j-s)
1,60
K/W
VCE
IGBT thermal model values
R (K/W)
τ (s)
4,90E-02
1,40E-01
8,04E-01
2,98E-01
1,69E-01
1,35E-01
4,40E+00
5,34E-01
8,02E-02
2,57E-02
5,09E-03
6,41E-04
Copyright Vincotech
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26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
100
I
I
I
I
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
D =
single pulse
80
Ts
=
ºC
V
=
±15
VGE
=
Tj
Tjmax
Copyright Vincotech
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26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
50
)
= f( )
tp
I F
VF
Z th(j-s)
101
40
30
20
10
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
Tj:
2,11
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,99E-02
4,04E-01
1,05E+00
3,39E-01
2,29E-01
2,33E+00
1,91E-01
4,49E-02
6,08E-03
1,02E-03
Copyright Vincotech
8
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
75
)
= f( )
tp
I F
VF
Z th(j-s)
101
60
45
30
15
Z
Z
Z
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
1,59
Tj:
K/W
Diode thermal model values
R (K/W)
τ
(s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
9
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C)
5
3
Eon
Eon
E
E
E
E
E
E
2,5
2
4
3
2
1
0
Eon
Eon
1,5
1
Eoff
Eoff
Eoff
Eoff
0,5
0
0
5
10
15
20
25
30
0
16
32
48
64
80
Rg (Ω)
IC (A)
With an inductive load at
25 °C
150 °C
With an inductive load at
25 °C
150 °C
V CE
V GE
=
=
=
=
V CE
V GE
I C
=
=
=
T j:
600
±15
32
V
V
Ω
Ω
T j:
600
±15
15
V
V
A
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
E rec = f(I c)
E rec = f(R g)
1,2
1,2
Erec
E
E
E
E
E
E
E
E
0,9
0,6
0,3
0
0,9
0,6
0,3
0
Erec
Erec
Erec
0
16
32
48
64
80
0
5
10
15
20
25
30
IC (A)
Rg (Ω)
25 °C
150 °C
25 °C
150 °C
With an inductive load at
With an inductive load at
V CE
V GE
R gon
=
=
=
V CE
V GE
I C
=
=
=
600
±15
32
V
V
Ω
T j:
600
±15
15
V
V
A
T j:
Copyright Vincotech
10
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
1
1
td(off)
t
t
t
td(on)
t
t
t
t
t
td(off)
tf
td(on)
tf
0,1
0,1
tr
tr
0,01
0,01
0,001
0,001
0
16
32
48
64
80
0
5
10
15
20
25
30
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
T j =
T j =
150
600
±15
32
°C
V
150
600
±15
15
°C
V
V CE
=
=
=
=
V CE
=
=
=
V GE
R gon
R goff
V GE
I C
V
V
Ω
Ω
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C)
t rr = f(R gon)
0,6
0,6
t
t
t
t
t
t
t
t
trr
trr
0,5
0,4
0,3
0,2
0,1
0
0,5
0,4
0,3
0,2
0,1
0
trr
trr
0
5
10
15
20
25
30
0
16
32
48
64
80
Rgon (Ω)
IC (A)
At
V CE
At
V CE =
600
±15
32
V
V
Ω
25 °C
150 °C
600
V
V
A
25 °C
150 °C
V GE
R gon
=
=
V GE
I C
=
=
T j:
±15
15
T j:
Copyright Vincotech
11
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C)
Q r = f(R gon)
4
3
Q
Q
Q
Q
Q
Q
Q
Q
Qr
3,2
2,4
1,6
0,8
0
Qr
Qr
2,4
1,8
1,2
0,6
0
Qr
0
5
10
15
20
25
30
0
16
32
48
64
80
Rgon (Ω)
IC (A)
At
V CE
=
At
VCE
V GE
I C=
=
600
±15
32
V
V
Ω
25 °C
150 °C
600
±15
15
V
V
A
25 °C
150 °C
V GE
R gon
=
=
=
T j:
T j:
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C)
I RM = f(R gon
)
16
50
I
I
I I
I I
I
I
40
30
20
10
0
12
IRM
IRM
8
4
IRM
IRM
0
0
16
32
48
64
80
Rgon (Ω)
0
5
10
15
20
25
30
IC (A)
At
V CE
At
V CE =
600
±15
32
V
V
Ω
25 °C
150 °C
600
±15
15
V
V
A
25 °C
150 °C
V GE
R gon
=
=
V GE
I C
=
=
T j:
T j:
Copyright Vincotech
12
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10-F012PNA015M7-P840C29
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt , di rr/dt = f(I C)
di F/dt , di rr/dt = f(R gon
)
6000
500
d
iF
/
dt
d
iF
/
dt
t
t
t
t
t
t
t
t
d
i
rr/d
t
i
i
i
i
d
irr
/dt
i
i
i
i
5000
4000
3000
2000
1000
0
400
300
200
100
0
0
16
32
48
64
80
Rgon (Ω)
0
5
10
15
20
25
30
IC (A)
At
V CE
At
V CE
V GE
I C=
=
600
±15
32
V
V
Ω
25 °C
150 °C
600
V
V
A
25 °C
150 °C
V GE
=
=
=
T j:
±15
15
T j:
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
36
30
24
18
12
6
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
0
0
250
500
750
1000
1250
1500
VC E (V)
At
T j
=
=
=
175
32
°C
Ω
R gon
R goff
32
Ω
Copyright Vincotech
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datasheet
Inverter Switching Definitions
General conditions
T j
R gon
R goff
=
=
=
150 °C
32 Ω
32 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
125
200
tdoff
%
%
IC
100
150
VGE 90%
VCE 90%
75
50
25
0
VCE
100
IC
VGE
tdon
tEoff
50
VCE 3%
VGE 10%
IC 10%
VCE
VGE
IC 1%
0
tEon
-25
-50
0
0,2
0,4
0,6
0,8
1
2,85
3
3,15
3,3
3,45
3,6
3,75
t (µs)
t (µs)
V GE (0%) =
-15
15
V
V GE (0%) =
-15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
600
15
V
600
15
V
A
A
t doff
t Eoff
=
=
0,218
0,800
μs
μs
t don
t Eon
=
=
0,174
0,586
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
200
fitted
%
%
IC
100
150
IC 90%
75
50
25
0
VCE
100
IC 60%
IC 90%
tr
IC 40%
50
VCE
IC10%
IC
IC 10%
0
tf
-25
-50
0,1
0,2
0,3
0,4
0,5
0,6
0,7
3,12
3,16
3,2
3,24
3,28
3,32
3,36
3,4
t (µs)
t (µs)
V C (100%) =
I C (100%) =
600
15
V
V C (100%) =
I C (100%) =
600
V
A
15
A
t f
=
0,127
μs
t r
=
0,048
μs
Copyright Vincotech
14
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
200
%
%
IC 1%
100
150
Eoff
Pon
Poff
75
Eon
100
50
50
25
VCE 3%
VGE 90%
VGE 10%
0
0
tEoff
tEon
-25
-50
0
0,2
0,4
0,6
0,8
1
2,9
3,05
3,2
3,35
3,5
3,65
t
(µs)
t
(µs)
P off (100%) =
E off (100%) =
9,24
1,32
0,80
kW
mJ
μs
P on (100%) =
E on (100%) =
9,24
2,01
0,59
kW
mJ
μs
t Eoff
=
t Eon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
150
%
IF
100
50
trr
VF
0
IRRM 10%
fitted
-50
IRRM 90%
IRRM 100%
-100
-150
3,1
3,2
3,3
3,4
3,5
3,6
3,7
t
(µs)
V F (100%) =
I F (100%) =
I RRM (100%) =
600
15
V
A
-12
A
t rr
=
0,423
μs
Copyright Vincotech
15
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Erec
Qr
IF
100
100
tErec
75
tQr
50
50
0
-50
25
Prec
0
-100
-25
3
3,5
4
4,5
5
5,5
3
3,5
4
4,5
5
5,5
t
(µs)
t
(µs)
I F (100%) =
Q r (100%) =
15
A
P rec (100%) =
E rec (100%) =
9,24
0,94
2,00
kW
mJ
μs
2,59
2,00
μC
μs
t Qr
=
t Erec =
Copyright Vincotech
16
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 17 mm housing with solder pins
10-F012PNA015M7-P840C29
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
LLLLL
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
SSSS
Outline
Pin table
Pin
X
Y
2,7
0
Function
Therm1
Therm2
DC-Rect
25,5
25,5
22,8
1
2
3
0
Not assembled
Not assembled
4
5
6
13,5
10,8
8,1
5,4
2,7
0
0
G15
7
0
DC-3
G13
8
0
9
0
DC-2
G11
10
11
12
13
14
15
16
17
18
19
20
21
22
23
0
0
DC-1
G12
Ph1
0
0
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
7,5
7,5
15
G14
Ph2
G16
15
Ph3
22,8
25,5
DC+Inv
DC+Rect
Not assembled
33,5
33,5
33,5
15
7,5
0
ACIn1
ACIn2
ACIn3
Copyright Vincotech
17
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14, T15,
IGBT
1200 V
15 A
15 A
25 A
Inverter Switch
Inverter Diode
Rectifier Diode
Thermistor
T16
D11, D12, D13, D14,
FWD
1200 V
1600 V
D15, D16
D31, D32, D33, D34,
Rectifier
Thermistor
D35, D36
Rt
Copyright Vincotech
18
26 Jul. 2018 / Revision 1
10-F012PNA015M7-P840C29
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-F012PNA015M7-P840C29-D1-14
26 Jul. 2018
Initial release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
19
26 Jul. 2018 / Revision 1
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