10-F106NIA100SA-M135F [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-F106NIA100SA-M135F |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总28页 (文件大小：1270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
flow NPC 1
600 V / 100 A
Features
flow 1 housing
● Neutral-point-Clamped inverter
● Compact flow1 housing
● Low Inductance Layout
12mm height
17mm height
Target Applications
Schematic
● UPS
● Motor Drive
● Solar inverters
Types
● 10-F106NIA100SA-M135F
● 10-P106NIA100SA-M135FY
● 10-FY06NIA100SA-M135F08
● 10-PY06NIA100SA-M135F08Y
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Buck IGBT
V CE
I C
Collector-emitter break down voltage
600
V
A
T s = 80 °C
T c = 80°C
92
T j = T jmax
DC collector current
121
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Pulsed collector current
Power dissipation
300
A
T s = 80 °C
T c = 80°C
159
206
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
6
µs
V
360
T jmax
Maximum Junction Temperature
Turn off safe operating area
175
200
°C
A
T j ≤ 150 °C
V CE ≤ V CES
Buck Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
V
A
T s = 80 °C
T c = 80°C
67
88
T j = T jmax
DC forward current
t p limited by T jmax
T j = T jmax
T c = 100 °C
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
300
A
T s = 80 °C
T c = 80°C
74
W
°C
112
T jmax
175
copyright Vincotech
1
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Boost IGBT
V CE
I C
Collector-emitter break down voltage
600
V
A
T s = 80 °C
T c = 80°C
92
T j = T jmax
DC collector current
121
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Pulsed collector current
Power dissipation
300
A
T s = 80 °C
T c = 80°C
159
240
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
6
µs
V
360
T jmax
Maximum Junction Temperature
Turn off safe operating area
175
200
°C
A
T j ≤ 150°C
V CE ≤ V CES
Boost Sw. Prot. Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
V
A
T s = 80 °C
T c = 80°C
80
T j = T jmax
DC forward current
106
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
200
A
T s = 80 °C
T c = 80°C
119
180
W
°C
T jmax
175
Boost Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
V
A
T s = 80 °C
T c = 80°C
80
T j = T jmax
DC forward current
106
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
200
A
T s = 80 °C
T c = 80°C
119
180
W
°C
T jmax
175
Thermal Properties
T stg
T op
Storage temperature
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Isolation Properties
Isolation voltage
V is
t = 2s
DC voltage
4000
V
Creepage distance
Clearance
min 12,7
min 12,7
8,07 / 7,86
mm
17mm housing
mm
12mm housing solder pins / Press-fit pins
copyright Vincotech
2
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
I C [A]
or
V GE [V]
or
or
V CE [V] I F [A]
T j [°C]
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Buck IGBT
25
150
25
150
25
150
25
5
5,8
6,5
1,85
60
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0016
V
V
1,05
1,50
1,73
15
0
100
600
0
µA
µA
Ω
1,4
20
150
none
25
150
25
150
25
150
25
150
25
150
25
160
189
26
31
270
296
100
123
1,887
2,405
2,903
3,808
Rise time
ns
t d(off)
t f
Turn-off delay time
R gon = 8 Ω
R goff = 8 Ω
±15
350
100
Fall time
E on
Turn-on energy loss
mWs
pF
E off
C ies
C oss
C rss
Q G
Turn-off energy loss
Input capacitance
150
6280
400
186
620
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
480
100
nC
phase-change
material
R th(j-s)
Thermal resistance chip to heatsink
0,60
K/W
λ = 3,4 W/mK
Buck Diode
25
150
25
150
25
150
25
150
25
150
25
1,4
1,70
1,71
86
113
127
1,9
V F
I RRM
Diode forward voltage
100
100
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
164
5,072
9,357
3385
1871
1,154
2,238
Q rr
R gon = 8 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
350
µC
( di rf/dt )max
E rec
A/µs
mWs
150
phase-change
material
R th(j-s)
Thermal resistance chip to heatsink
1,01
K/W
λ = 3,4 W/mK
Note: All characteristic values are related to gates of paralell IGBTs connected together
copyright Vincotech
3
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
I C [A]
or
V GE [V]
or
or
V CE [V] I F [A]
T j [°C]
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Boost IGBT
25
150
25
150
25
150
25
5
5,8
6,5
1,85
60
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0016
V
V
1,05
1,5
1,73
15
0
100
600
0
µA
µA
Ω
1,4
20
150
none
25
150
25
150
25
150
25
150
25
150
25
164
169
29
Rise time
32
ns
273
298
97
116
1,93
2,55
3,22
4,27
t d(off)
t f
Turn-off delay time
R gon = 8 Ω
R goff = 8 Ω
Fall time
E on
Turn-on energy loss
Turn-off energy loss
Input capacitance
mWs
pF
E off
C ies
C oss
C rss
Q G
150
6280
400
186
620
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
480
100
nC
phase-change
material
R th(j-s)
Thermal resistance chip to heatsink
0,60
K/W
λ = 3,4 W/mK
Boost Sw. Prot. Diode
25
125
1,2
1,69
1,65
1,9
V F
Diode forward voltage
100
V
phase-change
material
R th(j-s)
Thermal resistance chip to heatsink
0,80
K/W
λ = 3,4 W/mK
Boost Diode
25
150
25
150
25
150
25
150
25
150
25
150
25
150
1,2
1,68
1,65
1,9
60
V F
Diode forward voltage
100
100
V
μA
I r
I RRM
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
600
350
71
90
130
287
4,4
A
t rr
ns
Q rr
R gon = 8 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
9,3
2960
551
1,03
2,37
( di rf/dt )max
E rec
A/µs
mWs
phase-change
material
R th(j-s)
Thermal resistance chip to heatsink
0,80
K/W
λ = 3,4 W/mK
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
B-value
R
Δ R/R
P
25
100
25
25
25
25
22000
Ω
%
R 100 = 1486 Ω
-12
14
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B (25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
4
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Buck
Figure 1
Typical output characteristics
IGBT
Figure 2
Typical output characteristics
IGBT
I C = f(V CE
)
I C = f(V CE)
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0
0
1
2
3
4
5
VCE (V)
V
CE (V)
1
2
3
4
5
At
At
t p
=
t p =
250
25
μs
°C
250
150
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
100
250
200
150
100
80
60
40
20
Tj = Tjmax-25°C
50
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
3
VGE (V)
VF (V)
At
At
t p
=
t p
=
250
10
μs
V
250
μs
V CE
=
copyright Vincotech
5
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Buck
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
10
8
6
4
2
0
Eon High T
Eon Low T
Eoff High T
8
Eoff Low T
6
Eoff High T
Eoff Low T
4
Eon High T
Eon Low T
2
0
I
C (A)
R
G ( Ω)
0
8
16
24
32
40
0
50
100
150
200
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/150
350
±15
8
25/150
350
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
V
=
I C =
Ω
Ω
100
A
=
8
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
High T
Erec High T
Erec Low T
Erec Low T
I
C (A)
R G ( Ω)
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
T j =
T j =
25/150
350
±15
8
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
±15
V
=
I C =
Ω
100
A
copyright Vincotech
6
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Buck
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
1,00
tdoff
tdon
µ
µ
µ
µ
µ
µ
µ
µ
tdoff
tdon
tf
0,10
0,01
0,00
0,10
0,01
0,00
tf
tr
tr
I
C (A)
R G ( Ω)
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
T j =
T j =
150
350
±15
8
°C
V
150
350
±15
100
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
8
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,20
0,4
trr Low T
trr High T
µ
µ
µ
µ
µ
µ
µ
µ
0,3
0,2
0,1
0,0
0,15
0,10
0,05
0,00
trr Low T
trr Low T
0
8
16
24
32
40
I C (A)
R gon ( Ω)
0
50
100
150
200
At
T j =
At
T j =
V R =
I F =
25/150
350
±15
8
°C
V
25/150
350
°C
V
V CE
V GE
=
=
V
100
A
R gon
=
V GE =
Ω
±15
V
copyright Vincotech
7
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Buck
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
15
12
Qrr High T
µ
µ
µ
µ
µ
µ
µ
µ
Qrr High T
12
9
9
6
3
0
Qrr Low T
6
Qrr Low T
3
0
At
I
C (A)
R
gon ( Ω)
0
50
100
150
200
0
8
16
24
32
40
At
T j =
T j =
V R =
I F =
25/150
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
350
±15
8
=
V
100
A
=
V GE =
Ω
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
150
120
90
60
30
0
200
IRRM High T
160
120
80
IRRM Low T
IRRM High T
IRRM Low T
40
0
0
I C (A)
R gon ( Ω)
40
0
50
100
150
200
8
16
24
32
At
T j =
At
T j =
V R =
I F =
25/150
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
350
±15
8
=
V
100
A
=
V GE =
Ω
±15
V
copyright Vincotech
8
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Buck
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward and reverse recovery current
Typical rate of fall of forward and reverse recovery current
as a function of collector current
as a function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(I c)
dI 0/dt ,dI rec/dt = f(R gon
)
5000
10000
dIo/dt T
dI0/dt T
µ
µ
µ
µ
µ
µ
µ
µ
dIrec/dt T
dIrec/dt T
4000
3000
2000
1000
0
8000
6000
4000
2000
0
I
C (A)
R gon (W)
40
0
8
16
24
32
0
50
100
150
200
At
T j =
At
T j =
V R =
I F =
25/150
°C
V
25/150
°C
V
V CE
V GE
R gon
=
350
±15
8
350
100
±15
=
V
A
=
V GE
=
Ω
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
101
100
10-1
D = 0,5
0,2
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-2
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,60
K/W
1,01
K/W
IGBT thermal model values
R (K/W) Tau (s)
FWD thermal model values
R (K/W) Tau (s)
4,52E-02 4,36E+00
1,01E-01 9,48E-01
2,76E-01 2,00E-01
1,04E-01 6,20E-02
5,77E-02 1,37E-02
1,50E-02 2,79E-03
6,88E-02 2,96E+00
1,71E-01 4,07E-01
5,09E-01 9,03E-02
1,60E-01 2,01E-02
6,67E-02 4,84E-03
3,19E-02 5,60E-04
copyright Vincotech
9
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Buck
Figure 21
IGBT
Figure 22
Collector current as a
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
function of heatsink temperature
I C = f(T s)
300
250
200
150
100
50
150
120
90
60
30
0
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
120
200
160
120
80
100
80
60
40
20
0
40
0
T s
(
o C)
0
50
100
150
200
T s (
o C)
0
50
100
150
200
At
T j =
At
T j =
175
°C
175
°C
copyright Vincotech
10
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Buck
Figure 25
IGBT
Figure 26
IGBT
Safe operating area as a function
of collector-emitter voltage
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
103
16
10mS
1mS
100uS
14
12
10
8
100mS
DC
120V
102
480V
101
100
6
4
10-1
2
0
0
200
400
600
800
100
VCE (V)
Q g (nC)
103
102
101
At
At
D =
single pulse
I C
=
100
A
T s =
80
ºC
V GE
=
±15
T jmax
V
T j =
ºC
copyright Vincotech
11
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Boost
Figure 1
IGBT
Figure 2
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
t p
=
t p =
250
25
μs
°C
250
150
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
100
300
250
200
150
100
50
80
60
40
20
Tj = 25°C
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
VGE (V)
12
VF (V)
2
4
6
8
10
At
At
t p
=
t p
=
250
10
μs
V
250
μs
V CE
=
copyright Vincotech
12
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Boost
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
8
6
4
2
0
10
Eon High T
Eoff High T
Eon Low T
8
Eoff Low T
6
Eoff High T
Eoff Low T
Eon High T
4
Eon Low T
2
0
0
8
16
24
32
40
0
50
100
150
200
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
25/150
350
±15
8
°C
V
25/150
350
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
V
=
I C =
Ω
Ω
101
A
=
8
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
4
3
2
1
0
3,5
Erec High T
3
2,5
2
Erec High T
Erec Low T
1,5
1
Erec Low T
0,5
0
0
50
100
150
200
R G ( Ω )
I C (A)
0
8
16
24
32
40
With an inductive load at
With an inductive load at
T j =
T j =
25/150
350
±15
8
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
±15
V
=
I C =
Ω
101
A
copyright Vincotech
13
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Boost
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdon
tdoff
tdoff
tdon
tf
0,1
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
50
100
150
200
0
8
16
24
32
40
With an inductive load at
With an inductive load at
T j =
T j =
150
350
±15
8
°C
V
150
350
±15
101
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
8
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,4
0,4
trr High T
µ
µ
µ
µ
µ
µ
µ
µ
trr High T
0,3
0,2
0,1
0,0
0,3
0,2
0,1
0,0
trr Low T
trr Low T
0
50
100
150
200
I C (A)
R gon ( Ω)
0
8
16
24
32
40
At
At
T j =
T j =
V R =
I F =
25/150
350
±15
8
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
=
V
101
A
=
V GE =
Ω
±15
V
copyright Vincotech
14
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Boost
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
15
10
Qrr High T
µ
µ
µ
µ
µ
µ
µ
µ
Qrr High T
12
9
8
6
4
2
0
Qrr Low T
6
Qrr Low T
3
0
I
C (A)
R gon ( Ω)
0
50
100
150
200
0
8
16
24
32
40
At
At
T j =
T j =
V R =
I F =
25/150
350
±15
8
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
=
V
101
A
=
V GE =
Ω
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
150
150
120
90
60
30
0
IRRM High T
120
90
IRRM Low T
60
IRRM High T
IRRM Low T
30
0
0
I C (A)
R gon ( Ω)
40
8
16
24
32
0
50
100
150
200
At
T j =
At
T j =
V R =
I F =
25/150
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
350
±15
8
=
V
101
A
=
V GE =
Ω
±15
V
copyright Vincotech
15
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Boost
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward and reverse recovery current
as a function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward and reverse recovery current
as a function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
5000
10000
dI0/dt T
dIo/dt T
µ
µ
µ µ
µ µ
µ
µ
dIrec/dt T
dIrec/dt T
8000
6000
4000
2000
0
4000
3000
2000
1000
0
0
8
16
24
32
40
0
50
100
150
200
I C (A)
R gon ( Ω)
At
T j =
At
T j =
V R =
I F =
25/150
°C
V
25/150
350
°C
V
V CE
V GE
R gon
=
350
±15
8
=
V
101
A
=
V GE
=
Ω
±15
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
100
10-1
10-1
D = 0,5
D = 0,5
0,2
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,6
K/W
0,80
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
4,52E-02 4,36E+00
1,01E-01 9,48E-01
2,64E-01 2,00E-01
1,04E-01 6,20E-02
5,77E-02 1,37E-02
1,50E-02 2,79E-03
R (K/W) Tau (s)
4,68E-02 4,82E+00
1,19E-01 8,49E-01
3,15E-01 1,49E-01
1,67E-01 3,91E-02
1,01E-01 9,01E-03
4,79E-02 1,14E-03
copyright Vincotech
16
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Boost
Figure 21
IGBT
Figure 22
Collector current as a
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
function of heatsink temperature
I C = f(T s)
300
250
200
150
100
50
150
120
90
60
30
0
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
240
200
160
120
80
150
120
90
60
30
0
40
0
Ts
(
o C)
Ts (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
17
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Boost
Figure 25
Boost Inverse Diode
Figure 26
Boost Inverse Diode
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
250
200
150
100
100
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
50
Tj = Tjmax-25°C
0,005
0,000
Tj = 25°C
1,5
0
10-2
10-5
0
0,5
1
2
2,5
3
10-4
10-3
10-2
10-1
100
101
VF (V)
t p (s)
At
At
t p / T
t p
=
250
μs
D =
R th(j-s)
=
0,80
K/W
Figure 27
Power dissipation as a
Boost Inverse Diode
Figure 28
Forward current as a
Boost Inverse Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
240
200
160
120
80
150
120
90
60
30
0
40
0
Ts (
o C)
Ts (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
18
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Thermistor
Figure 1
Thermistor
Figure 2
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
Typical NTC resistance values
1
1
B25/100
−
NTC-typical temperature characteristic
R(T) = R25 e
Ω
[ ]
T
T25
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
copyright Vincotech
19
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Switching Definitions BUCK
General conditions
T j
=
=
=
150 °C
8 Ω
8 Ω
R gon
R goff
Figure 1
IGBT
Figure 2
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
250
%
%
tdoff
VCE
IC
100
200
VGE 90%
VCE 90%
VGE
75
50
25
0
150
IC
VCE
100
tEoff
VGE
tdon
50
VGE10%
VCE
3%
IC 10%
0
tEon
IC 1%
-25
-50
-0,2
0
0,2
0,4
0,6
2,9
3
3,1
3,2
3,3
3,4
3,5
time (us)
time(us)
V GE (0%) =
-15
V
V GE (0%) =
-15
15
V
V
V
A
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
350
100
0,30
0,55
V
350
100
0,19
0,39
A
t doff
=
=
μs
μs
t don
=
=
μs
μs
t E off
t E on
Figure 3
IGBT
Figure 4
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
125
250
fitted
%
%
IC
IC
VCE
100
75
50
25
0
200
IC 90%
150
100
50
IC
60%
VCE
IC 90%
IC 40%
tr
IC10%
IC 10%
0
tf
-50
-25
3,1
3,2
3,3
3,4
3,5
0,1
0,2
0,3
0,4
0,5
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
350
100
0,12
V
A
V C (100%) =
I C (100%) =
t r =
350
100
0,03
V
A
μs
μs
copyright Vincotech
20
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Switching Definitions BUCK
Figure 5
IGBT
Figure 6
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
125
%
%
100
IC
1%
Eoff
Eon
Poff
100
Pon
75
50
25
75
50
25
VG
E90%
VCE
VGE 10%
3%
0
0
tEon
tEoff
-25
-25
2,9
3
3,1
3,2
3,3
3,4
3,5
time(us)
-0,2
0
0,2
0,4
0,6
time (us)
P off (100%) =
E off (100%) =
34,85
3,81
0,55
kW
mJ
μs
P on (100%) =
E on (100%) =
34,85
2,41
0,39
kW
mJ
μs
t E off
=
t E on =
Figure 7
FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
IRRM 10%
0
-50
-100
-150
IRRM 90%
IRRM 100%
3,1
3,2
3,3
3,4
3,5
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
350
V
100
A
-113
0,16
A
t rr
=
μs
copyright Vincotech
21
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Switching Definitions BUCK
Figure 8
FWD
Figure 9
Turn-on Switching Waveforms & definition of t Erec
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
(t Erec= integrating time for E rec
)
150
125
%
%
Id
Qrr
100
100
Erec
tQrr
tErec
50
75
0
-50
50
25
0
Prec
-100
-150
-25
3,1
3,2
3,3
3,4
3,5
3,6
3,7
time(us)
3,1
3,2
3,3
3,4
3,5
3,6
time(us)
I d (100%) =
100
A
P rec (100%) =
E rec (100%) =
34,85
kW
mJ
μs
Q rr (100%) =
t Q rr
9,36
0,33
μC
μs
2,24
0,33
=
t E rec =
Measurement circuit
Figure 10
BUCK stage switching measurement circuit
copyright Vincotech
22
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Switching Definitions Boost
General conditions
T j
=
=
=
150 °C
8 Ω
8 Ω
R gon
R goff
Figure 1
IGBT
Figure 2
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
250
%
%
tdoff
VCE
IC
100
200
VGE 90%
VCE 90%
VGE
75
50
25
0
150
IC
VCE
100
tEoff
VGE
tdon
50
VGE10%
VCE
3%
IC 10%
0
tEon
IC 1%
-25
-50
-0,2
0
0,2
0,4
0,6
2,9
3
3,1
3,2
3,3
3,4
3,5
time (us)
time(us)
V GE (0%) =
-15
V
V GE (0%) =
-15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
350
100
0,30
0,57
V
350
100
0,17
0,36
V
A
A
t doff
=
=
μs
μs
t don
=
=
μs
μs
t E off
t E on
Figure 3
IGBT
Figure 4
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
125
250
fitted
%
VCE
%
IC
IC
100
200
IC 90%
150
75
IC
60%
VCE
100
50
IC 90%
IC 40%
tr
50
25
IC10%
IC 10%
0
0
tf
-50
-25
3
3,1
3,2
3,3
3,4
3,5
0,1
0,2
0,3
0,4
0,5
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
350
100
0,12
V
V C (100%) =
I C (100%) =
t r =
350
100
0,03
V
A
A
μs
μs
copyright Vincotech
23
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Switching Definitions Boost
Figure 5
IGBT
Figure 6
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
%
125
%
Eon
Eoff
Poff
100
100
Pon
75
50
25
75
50
25
VG
E90%
VCE
VGE 10%
3%
0
0
tEon
tEoff
IC
1%
-25
-25
2,9
3
3,1
3,2
3,3
3,4
3,5
time(us)
-0,2
0
0,2
0,4
0,6
time (us)
P off (100%) =
E off (100%) =
35,15
4,27
0,57
kW
mJ
μs
P on (100%) =
E on (100%) =
35,15
2,55
0,36
kW
mJ
μs
t E off
=
t E on =
Figure 7
FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
-50
IRRM 10%
IRRM 90%
IRRM 100%
-100
-150
3,1
3,2
3,3
3,4
3,5
3,6
3,7
time(us)
V d (100%) =
I d (100%) =
350
100
-90
V
A
I RRM (100%) =
t rr
A
=
0,29
μs
copyright Vincotech
24
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Switching Definitions Boost
Figure 8
FWD
Figure 9
Turn-on Switching Waveforms & definition of t Erec
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
(t Erec= integrating time for E rec
)
150
125
%
%
Erec
Id
Qrr
100
100
tQrr
tErec
50
75
0
-50
50
25
Prec
-100
-150
0
-25
3,1
3,2
3,3
3,4
3,5
3,6
3,7
3,8
3,9
3,1
3,2
3,3
3,4
3,5
3,6
3,7
3,8 3,9
time(us)
time(us)
I d (100%) =
Q rr (100%) =
100
A
P rec (100%) =
E rec (100%) =
35,15
2,37
0,57
kW
mJ
μs
9,27
0,57
μC
μs
t Q rr
=
t E rec =
Measurement circuit
Figure 10
BOOST stage switching measurement circuit
copyright Vincotech
25
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 17mm housing, solder pins
with thermal paste 17mm housing, solder pins
without thermal paste 17mm housing, Press-fit pins
without thermal paste 12mm housing, solder pins
with thermal paste 12mm housing, solder pins
without thermal paste 12mm housing, Press-fit pins
Ordering Code
10-F106NIA100SA-M135F
10-F106NIA100SA-M135F-/3/
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-FY06NIA100SA-M135F08-/3/
10-PY06NIA100SA-M135F08Y
Name
Date Code
WWYY
UL & VIN
UL VIN
Lot
LLLLL
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
Type&Ver
Lot number Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
17mm housing
1
52,2
52,2
36,2
33,2
33,2
9,2
6,2
6,2
2,7
0
6,9
0
NTC1
NTC2
E37
G3
2
3
6,75
7,9
4
5
4,9
G7
6
5,75
6,9
E48
G4
7
8
3,9
G8
9
0
DC-
DC-
DC-
DC-
DC-
DC-
GND
GND
GND
GND
DC+
DC+
DC+
DC+
DC+
DC+
E15
G5
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
0
2,7
0
2,7
2,7
12mm housing
2,7
0
5,4
5,4
2,7
0
12,75
12,75
15,45
15,45
22,8
22,8
25,5
25,5
28,2
28,2
22,45
21,3
24,3
22,15
21
2,7
0
2,7
0
2,7
0
2,7
0
18,3
21,3
21,3
43
G1
E26
G6
46
46
24
G2
52,2
49,5
52,2
49,5
52,2
49,5
52,2
20,1
22,8
22,8
25,5
25,5
28,2
28,2
OUT
OUT
OUT
OUT
OUT
OUT
OUT
copyright Vincotech
26
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Ordering Code and Marking - Outline - Pinout
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1‖T5, T4‖T8
D9,D10
IGBT
FWD
IGBT
FWD
FWD
NTC
600 V
600 V
600 V
600 V
600 V
100 A
100 A
100 A
100 A
Buck Switch
Buck Diode
Boost Switch
Boost Diode
T2‖T6,T3‖T7
D1‖D5,D4‖D8
D2‖D6,D3‖D7
NTC
100 A
Boost Sw. Prot. Diode
Thermistor
copyright Vincotech
27
17 May. 2016 / Revision 4
10-F106NIA100SA-M135F
10-P106NIA100SA-M135FY
10-FY06NIA100SA-M135F08
10-PY06NIA100SA-M135F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
all
10-xx06NIA100SA-M135Fxx-D4-14
17 May. 2016
New brand, new subtype added, new Rth values with PCM
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
28
17 May. 2016 / Revision 4
相关型号：
10-F106NIA150SA-M136F
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-F107NIB150SG06-M136F39
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
VINCOTECH
10-F1126PA025M7-L826F09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F1126PA035M7-L827F09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F1126PA050M7-L828F09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F1126PA075M7-L829F09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-F1126PA100M7-L820F09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
©2020 ICPDF网 联系我们和版权申明