10-F112PMA035M7-P589A79 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-F112PMA035M7-P589A79 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总32页 (文件大小：4662K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
1200 V / 35 A
flow PIM 1
Features
flow 1 housing
● IGBT M7 with low V CEsat and improved EMC behavior
● Open emitter configuration
12 mm
housing
● Compact and low inductive design
● Built-in NTC
17 mm
housing
Solder pins
Press-fit pins
Schematic
Target applications
● Industrial Drives
Types
● 10-FY12PMA035M7-P589A78
● 10-PY12PMA035M7-P589A78Y
● 10-F112PMA035M7-P589A79
● 10-P112PMA035M7-P589A79Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
Peak Repetitive Reverse Voltage
1600
55
V
A
IF
IFSM
I2t
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
350
610
65
A
50 Hz Single Half Sine Wave
tp = 10 ms
Tj = 150 °C
Ts = 80 °C
A2s
W
°C
Ptot
Tjmax
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
150
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08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
50
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
A
107
±20
9,5
175
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
40
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
Tj = Tjmax
70
A
75
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
IC
Collector-emitter voltage
1200
34
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
50
A
82
W
V
±20
9,5
175
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
Brake Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
21
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
Tj = Tjmax
30
A
45
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
V
Visol
Isolation voltage
Creepage distance
Clearance
tp = 1 min
min. 12,7
7,91 / 7,96
min. 12,7
> 200
mm
12 mm housing with solder pins / press-fit pins
17 mm housing
mm
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,15
1,12
1,15
1,6
VF
Ir
125
150
25
Forward voltage
45
V
50
Reverse leakage current
1600
µA
145
1100
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,08
K/W
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10-P112PMA035M7-P589A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0035 25
25
5,4
6
6,6
V
V
1,48
1,64
1,68
1,75
VCEsat
Collector-emitter saturation voltage
15
35
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,08
0,5
mA
µA
Ω
20
none
8000
280
95
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
35
300
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,89
K/W
Dynamic
25
124
122
121
14
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
17
18
Rgoff = 8 Ω
Rgon = 8 Ω
ns
179
203
208
95
118
119
1,45
1,92
2,09
2,40
3,17
3,42
td(off)
Turn-off delay time
Fall time
±15
600
35
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 4,3 μC
= 6,2 μC
= 6,9 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
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10-P112PMA035M7-P589A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
125
150
1,66
1,76
1,75
2,1
40
VF
IR
Forward voltage
35
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,27
K/W
Dynamic
25
77
76
77
IRRM
125
150
25
Peak recovery current
A
157
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
284
311
ns
di/dt = 2681 A/μs
di/dt = 2670 A/μs ±15
di/dt = 2690 A/μs
4,34
6,18
6,90
1,96
2,82
3,13
2734
2205
2101
600
35
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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10-PY12PMA035M7-P589A78Y
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10-P112PMA035M7-P589A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0025 25
25
5,4
6
6,6
V
V
1,65
1,89
1,95
1,95
VCEsat
Collector-emitter saturation voltage
15
25
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
70
µA
nA
Ω
20
500
none
4800
170
57
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
25
180
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,16
K/W
Dynamic
25
71
67
65
td(on)
125
150
25
Turn-on delay time
48
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
50
51
Rgoff = 16 Ω
Rgon = 16 Ω
ns
262
290
296
101
117
119
2,60
3,11
3,24
2,03
2,65
2,81
td(off)
Turn-off delay time
Fall time
15/0
700
25
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1,9 μC
= 2,9 μC
= 3,2 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
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10-PY12PMA035M7-P589A78Y
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10-P112PMA035M7-P589A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
1,63
1,74
1,73
2,1
30
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,11
K/W
Dynamic
25
14
15
15
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
264
375
413
1,92
2,90
3,15
0,78
1,28
1,41
111
85
trr
Qr
Reverse recovery time
ns
di/dt = 394 A/μs
di/dt = 319 A/μs 15/0
di/dt = 403 A/μs
700
25
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
72
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
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10-PY12PMA035M7-P589A78Y
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10-P112PMA035M7-P589A79Y
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,08
T j:
K/W
Diode thermal model values
R (K/W)
τ
(s)
4,60E-02
1,23E-01
4,58E-01
3,31E-01
7,76E-02
4,64E-02
9,93E+00
1,00E+00
1,51E-01
5,61E-02
9,34E-03
1,55E-03
Copyright Vincotech
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08 Mar. 2019 / Revision 4
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10-PY12PMA035M7-P589A78Y
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10-P112PMA035M7-P589A79Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,89
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,56E-02
8,84E-02
3,30E-01
2,86E-01
8,94E-02
3,24E-02
1,67E-02
3,89E+00
7,65E-01
1,35E-01
4,71E-02
7,49E-03
8,15E-04
2,52E-04
Copyright Vincotech
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08 Mar. 2019 / Revision 4
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10-PY12PMA035M7-P589A78Y
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10-P112PMA035M7-P589A79Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
100
100ms
1ms
10µs
10ms
100µs
DC
I
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
D =
single pulse
Ts
=
80
ºC
VGE
=
±15
V
Tj =
Tjmax
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10-PY12PMA035M7-P589A78Y
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10-P112PMA035M7-P589A79Y
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,27
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,82E-02
1,11E-01
4,63E-01
3,72E-01
1,72E-01
9,36E-02
3,40E+00
5,24E-01
9,20E-02
2,94E-02
5,46E-03
6,17E-04
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10-PY12PMA035M7-P589A78Y
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10-P112PMA035M7-P589A79Y
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,16
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
5,33E-02
1,07E-01
5,05E-01
2,68E-01
1,51E-01
7,80E-02
3,54E+00
5,75E-01
1,04E-01
3,30E-02
7,35E-03
6,52E-04
Copyright Vincotech
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datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
100
1ms
10µs
10ms
100µs
100ms
DC
I
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
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datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
2,11
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,99E-02
4,04E-01
1,05E+00
3,39E-01
2,29E-01
2,33E+00
1,91E-01
4,49E-02
6,08E-03
1,02E-03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
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datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
Ω
j
:
600
±15
35
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
:
600
±15
35
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
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datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
8
°C
V
150
600
±15
35
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
V
V
A
25 °C
125 °C
150 °C
±15
8
:
Tj
VGE
I C
=
±15
35
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
17
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
Copyright Vincotech
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08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
t
dirr/dt
i
dir r
/
dt
i
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
±15
8
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
8
8
Ω
Copyright Vincotech
19
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
T j
Rgon
R goff
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
tEoff
VCE
VGE
VCE
tEon
-15
VGE (0%) =
-15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
35
V
600
35
V
A
A
0,203
0,739
μs
μs
0,122
0,372
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
VCE
tr
tf
IC
600
35
V
600
35
V
A
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
0,118
μs
0,017
μs
tr
=
Copyright Vincotech
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08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEoff
tEon
20,99
3,17
0,74
kW
mJ
μs
20,99
1,92
0,37
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
35
V
A
-76
0,284
A
μs
t rr
=
Copyright Vincotech
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08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
IF
Qr
Erec
tErec
Prec
35
A
20,99
2,82
0,58
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
6,18
0,58
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
22
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
700
15/0
16
V
V
j
:
700
15/0
25
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
Ω
Ω
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
700
15/0
16
V
V
Ω
:
700
15/0
25
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
23
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
700
15/0
16
°C
V
150
700
15/0
25
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
700
700
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
15/0
16
:
Tj
15/0
25
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
24
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
700
700
15/0
16
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
15/0
25
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
700
15/0
16
V
V
Ω
25 °C
125 °C
150 °C
700
15/0
25
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
VGE
=
=
=
R gon
=
Copyright Vincotech
25
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
t
i
dirr/dt
i
dir r
/
dt
700
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
700
V
V
A
25 °C
15/0
16
:
Tj
=
15/0
25
:
Tj
125 °C
150 °C
VGE
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
16
16
Ω
Copyright Vincotech
26
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Brake Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
T j
Rgon
R goff
16 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
VCE
VGE
IC
VGE
tEoff
VCE
tEon
0
V
0
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
700
25
V
700
25
V
A
A
t doff
t Eoff
=
=
0,290
0,812
μs
μs
tdon
tEon
=
=
0,067
0,446
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
700
25
V
700
25
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
0,117
μs
0,050
μs
tr
=
Copyright Vincotech
27
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Poff
Pon
Eoff
Eon
tEoff
tEon
17,58
2,65
0,81
kW
mJ
μs
17,58
3,11
0,45
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
700
25
V
A
-15
0,375
A
μs
t rr
=
Copyright Vincotech
28
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Brake Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Erec
Qr
tErec
IF
Prec
25
A
17,58
1,28
0,76
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
2,90
0,76
μC
μs
t Qr
=
tErec =
Copyright Vincotech
29
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with Press-fit pins
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
without thermal paste 17 mm housing with Press-fit pins
with thermal paste 17 mm housing with Press-fit pins
Ordering Code
10-FY12PMA035M7-P589A78
10-FY12PMA035M7-P589A78-/3/
10-PY12PMA035M7-P589A78Y
10-PY12PMA035M7-P589A78Y-/3/
10-F112PMA035M7-P589A79
10-F112PMA035M7-P589A79-/3/
10-P112PMA035M7-P589A79Y
10-P112PMA035M7-P589A79Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
V IN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
0
Function
G27
52,55
47,7
44,8
37,8
37,8
35
2
0
DC-Rect
DC-Rect
DC+Rect
DC+Rect
DC+Inv
DC+Inv
Therm1
Therm2
DC-3
3
0
4
0
P589A79Y
5
2,8
0
6
7
35
2,8
0
8
28
9
25,2
22,4
0
P589A79
10
0
11
12
13
14
15
16
19,6
16,8
14
0
0
0
0
0
0
G15
S15
DC-2
G13
11,2
8,4
S13
5,6
DC-1
P589A78
17
18
19
20
21
22
2,8
0
0
G11
S11
Ph1
G12
S12
Ph2
0
0
28,5
28,5
28,5
28,5
2,8
7,5
14,5
P589A78Y
23
24
25
26
27
28
29
30
31
32
17,3
22
28,5
28,5
28,5
28,5
28,5
28,5
25
G14
S14
29
Ph3
31,8
36,5
43,5
52,55
52,55
52,55
52,55
G16
S16
ACIn1
ACIn2
ACIn3
Br
16,9
8,6
2,8
DC-Br
Copyright Vincotech
30
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
45 A
35 A
35 A
Rectifier Diode
Inverter Switch
Inverter Diode
T11, T12, T13, T14,
T15, T16
IGBT
FWD
1200 V
1200 V
D11, D12, D13, D14,
D15, D16
T27
D27
Rt
IGBT
FWD
NTC
1200 V
1200 V
25 A
15 A
Brake Switch
Brake Diode
Thermistor
Copyright Vincotech
31
08 Mar. 2019 / Revision 4
10-FY12PMA035M7-P589A78
10-PY12PMA035M7-P589A78Y
10-F112PMA035M7-P589A79
10-P112PMA035M7-P589A79Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xx12PMA035M7-P589A7xx-D4-14
08 Mar. 2019
Correction of Ic/If values
1,2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
08 Mar. 2019 / Revision 4
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SI9137DB
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