10-F112PNA035M7-P589C79 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-F112PNA035M7-P589C79 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总18页 (文件大小：3630K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY12PNA035M7-P589C78
10-F112PNA035M7-P589C79
datasheet
1200 V / 35 A
flow PIM 1
Features
flow 1 housing
● IGBT M7 with low V CEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Built-in NTC
12 mm
17 mm
Schematic
Target applications
● Industrial Drives
Types
● 10-FY12PNA035M7-P589C78
● 10-F112PNA035M7-P589C79
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
45
V
A
IF
IFSM
I2t
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
350
610
65
A
50 Hz Single Half Sine Wave
tp = 10 ms
Tj = 150 °C
Ts = 80 °C
A2s
W
°C
Ptot
Tjmax
Total power dissipation
Tj = Tjmax
Maximum junction temperature
150
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
35
V
A
Collector current
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
A
Ts = 80 °C
107
±20
9,5
W
V
Short circuit ratings
VGE = 15 V Vcc = 800 V Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
35
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
70
A
Tj = Tjmax
75
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
Creepage distance
Clearance
tp = 1 min
V
min. 12,7
7,91
mm
mm
mm
For 12 mm housing
For 17 mm housing
min. 12,7
> 200
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,15
1,12
VF
IR
Forward voltage
Reverse leakage current
Thermal
45
V
125
1600
25
50
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,08
K/W
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0035 25
25
5,4
6,0
6,6
V
V
1,48
1,64
1,68
1,85
VCEsat
Collector-emitter saturation voltage
15
35
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
80
µA
nA
Ω
20
25
500
none
7900
270
97
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
35
260
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,89
K/W
Dynamic
25
124
122
121
14
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
17
18
Rgon = 8 Ω
Rgoff = 8 Ω
ns
179
203
208
95
118
119
1,45
1,92
2,09
2,40
3,17
td(off)
Turn-off delay time
Fall time
±15
600
35
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 4,3 μC
= 6,2 μC
= 6,9 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
3,42
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,66
1,76
1,75
2,1
40
VF
IR
125
150
25
Forward voltage
35
V
Reverse leakage current
1200
µA
150
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,27
K/W
Dynamic
25
77
76
77
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
157
284
311
4,34
6,18
6,90
1,96
2,82
3,13
2734
2205
2101
trr
Qr
Reverse recovery time
ns
di/dt = 2681 A/μs
di/dt = 2670 A/μs
di/dt = 2690 A/μs
±15
600
35
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
NTC
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
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datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
D =
tp / T
1,08
Tj:
125 °C
R th(j-s)
K/W
Diode thermal model values
R (K/W)
τ (s)
4,60E-02
1,23E-01
4,58E-01
3,31E-01
7,76E-02
4,64E-02
9,93E+00
1,00E+00
1,51E-01
5,61E-02
9,34E-03
1,55E-03
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,89
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,56E-02
8,84E-02
3,30E-01
2,86E-01
8,94E-02
3,24E-02
1,67E-02
3,89E+00
7,65E-01
1,35E-01
4,71E-02
7,49E-03
8,15E-04
2,52E-04
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
Ts
=
80
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-3
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
1,27
K/W
FWD thermal model values
R (K/W)
τ (s)
5,82E-02
1,11E-01
4,63E-01
3,72E-01
1,72E-01
9,36E-02
3,40E+00
5,24E-01
9,20E-02
2,94E-02
5,46E-03
6,17E-04
NTC Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
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datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
35
V
Tj:
125 °C
150 °C
125 °C
150 °C
V
A
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
8
°C
Tj =
150
600
±15
35
°C
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
V
V
A
VGE
R gon
R goff
VGE
I C
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
25 °C
VGE
R gon
=
=
±15
Tj:
VGE
I C
=
±15
Tj:
125 °C
150 °C
125 °C
150 °C
8
=
35
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
±15
8
V
V
Ω
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
±15
8
V
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
25 °C
VGE
=
=
V
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Ω
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dirr/dt
diF/dt
dir r/dt
t
t
i
i
600
At
VCE
=
V
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
35
V
25 °C
125 °C
150 °C
VGE
R gon
=
=
±15
V
=
V
A
Tj:
Tj:
8
Ω
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
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datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
35
V
600
35
V
A
A
tdoff
=
203
ns
tdon
=
122
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
35
V
VC (100%) =
I C (100%) =
600
35
V
A
A
118
ns
tr
=
17
ns
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
35
V
I F (100%) =
Q r (100%) =
35
A
A
6,18
μC
76
A
trr
=
284
ns
Copyright Vincotech
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datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
Ordering Code
10-FY12PNA035M7-P589C78
10-FY12PNA035M7-P589C78-/3/
10-F112PNA035M7-P589C79
10-F112PNA035M7-P589C79-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
Function
Not assembled
2
47,7
44,8
37,8
37,8
35
0
0
DC-Rect
3
DC-Rect
DC+Rect
DC+Rect
DC+Inv
DC+Inv
Therm1
Therm2
DC-3
4
0
5
2,8
0
6
7
35
2,8
0
8
28
P589C78
9
25,2
22,4
0
10
0
11
12
13
19,6
16,8
14
0
0
0
G15
S15
DC-2
14
15
16
17
18
19
20
21
22
11,2
8,4
5,6
2,8
0
0
0
G13
S13
DC-1
G11
S11
Ph1
G12
S12
Ph2
0
0
0
0
28,5
28,5
28,5
28,5
2,8
7,5
14,5
23
24
25
26
27
28
29
30
31
32
17,3
22
28,5
28,5
28,5
28,5
28,5
28,5
25
G14
S14
29
Ph3
31,8
36,5
43,5
52,55
52,55
G16
S16
ACIn1
ACIn2
ACIn3
16,9
Not assembled
Not assembled
P589C79
Copyright Vincotech
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datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
45 A
35 A
35 A
Rectifier Diode
Inverter Switch
T11, T12, T13, T14,
T15, T16
IGBT
1200 V
1200 V
D11, D12, D13, D14,
D15, D16
FWD
Inverter Diode
NTC
Rt
Thermistor
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-Fx12PNA035M7-P589C7x-D2-14
13 Jun. 2019
P589C79 version added
1, 2, 16
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
13 Jun. 2019 / Revision 2
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