10-F1166BA140RS01-M499G79 [VINCOTECH]
High inrush current capability;
| 型号： | 10-F1166BA140RS01-M499G79 |
| 厂家： | 
VINCOTECH |
| 描述： | High inrush current capability |
| 文件： | 总20页 (文件大小：7061K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F1166BA140RS01-M499G79
datasheet
flowCON 1
1600 V / 140 A
Features
flow 1 17 mm housing
● Non-controlled rectifier bridge
● IGBT M7 with low VCEsat and improved EMC behavior
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-F1166BA140RS01-M499G79
Copyright Vincotech
1
16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Switch
VCES
Collector-emitter voltage
1200
83
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
160
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
45
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
78
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Total power dissipation
1200
14
V
A
IF
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
44
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
98
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
1380
9520
117
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
V
min. 12,7
min. 12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0075
75
25
5,4
6
6,6
V
V
25
1,55
1,71
1,75
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
4
Cies
Coes
Cres
Qg
16000
480
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
190
VCC = 600 V
15
75
570
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,6
K/W
25
112,32
111,68
111,04
37,76
45,76
47,04
424
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
485,76
503,68
106,05
133,52
144,84
6,47
ns
0/15
700
75
tf
125
150
25
ns
QrFWD=6,08 µC
QrFWD=9,32 µC
QrFWD=10,48 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
8,37
mWs
mWs
8,88
6,21
Eoff
125
150
8,58
9,2
Copyright Vincotech
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10-F1166BA140RS01-M499G79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,66
1,78
1,79
2,1(1)
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,22
K/W
25
46,76
48,14
49,54
300,5
450,44
497,19
6,08
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=1883 A/µs
di/dt=1356 A/µs
di/dt=1465 A/µs
Qr
Recovered charge
0/15
700
75
125
150
25
9,32
μC
10,48
2,61
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
4,28
mWs
A/µs
4,86
250,15
224,35
222,94
(dirf/dt)max
125
150
Copyright Vincotech
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10-F1166BA140RS01-M499G79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Brake Sw. Protection Diode
Static
25
1,61
1,7
2,1(1)
VF
IR
Forward voltage
10
125
150
V
1,7
Reverse leakage current
Thermal
Vr = 1200 V
25
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,16
K/W
Rectifier Diode
Static
25
1,34
1,27
1,21(1)
1,1(1)
VF
IR
Forward voltage
110
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,6
K/W
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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10-F1166BA140RS01-M499G79
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
70
10
60
50
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,595
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,72E-02
6,97E-02
2,23E-01
1,98E-01
3,69E-02
2,04E-02
3,99E+00
8,51E-01
1,52E-01
5,35E-02
6,62E-03
6,16E-04
Copyright Vincotech
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10-F1166BA140RS01-M499G79
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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10-F1166BA140RS01-M499G79
datasheet
Brake Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
50
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,224
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,84E-02
9,89E-02
3,93E-01
4,67E-01
1,41E-01
8,52E-02
6,82E+00
9,92E-01
1,28E-01
3,75E-02
5,65E-03
5,44E-04
Copyright Vincotech
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10-F1166BA140RS01-M499G79
datasheet
Brake Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,162
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,29E-02
3,88E-01
7,75E-01
5,89E-01
3,17E-01
2,25E+00
2,05E-01
5,06E-02
8,88E-03
1,48E-03
Copyright Vincotech
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16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Rectifier Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
0,596
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
6,09E-02
9,74E-02
3,36E-01
5,94E-02
2,27E-02
1,98E-02
2,10E+00
4,43E-01
1,06E-01
3,01E-02
6,03E-03
6,99E-04
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10-F1166BA140RS01-M499G79
datasheet
Brake Switching Characteristics
figure 12.
IGBT
figure 13.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
25
20
15
10
5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 14.
FWD
figure 15.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
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10-F1166BA140RS01-M499G79
datasheet
Brake Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
td(on)
tf
tr
-1
10
-1
10
tr
tf
-2
10
-2
10
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
4
°C
V
150
700
0/15
75
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 18.
FWD
figure 19.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
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10-F1166BA140RS01-M499G79
datasheet
Brake Switching Characteristics
figure 20.
FWD
figure 21.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
17,5
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
25
50
75
100
125
150
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 22.
FWD
figure 23.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
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datasheet
Brake Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
dirr/dt ──────
0
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 26.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
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datasheet
Brake Switching Definitions
figure 27.
IGBT
figure 28.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 29.
IGBT
figure 30.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
16
16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Brake Switching Definitions
figure 31.
FWD
figure 32.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
17
16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-F1166BA140RS01-M499G79
10-F1166BA140RS01-M499G79-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
Br
22,5
20
0
0
0
0
2
Br
3
2,5
0
DC+Br
DC+Br
4
5
not assembled
not assembled
18,05
6
7
12,25
12,25
22,05
22,05
18,3
G27
S27
8
21,05
9
12,9
15,4
DC-Br
DC-Br
ACIn3
ACIn3
ACIn3
ACIn3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
25,45
28,15
28,15
28,15
18,3
15,6
12,9
not assembled
32,05
32,05
34,75
34,75
25,5
28,2
25,5
28,2
ACIn2
ACIn2
ACIn2
ACIn2
not assembled
42,05
42,05
44,75
44,75
25,5
28,2
25,5
28,2
ACIn1
ACIn1
ACIn1
ACIn1
not assembled
52,1
52,1
52,1
52,1
52,1
52,1
52,1
52,1
28,2
25,7
23,2
20,7
12,55
10,05
7,55
5,05
DC-Rect
DC-Rect
DC-Rect
DC-Rect
DC+Rect
DC+Rect
DC+Rect
DC+Rect
not assembled
not assembled
Copyright Vincotech
18
16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Pinout
DC+Rect
DC+Br
3,4
30,31,32,33
D32
D34
D36
D27
ACIn1
21,22,23,24
Br
1,2
ACIn2
16,17,18,19
T27
ACIn3
D47
11,12,13,14
D31
G27
S27
D33
D35
7
8
26,27,28,29
9,10
DC-Br
DC-Rect
Identification
Component
Voltage
Current
Function
Comment
ID
T27
D27
D47
IGBT
FWD
FWD
1200 V
1200 V
1200 V
75 A
50 A
10 A
Brake Switch
Brake Diode
Brake Sw. Protection Diode
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
140 A
Rectifier Diode
Copyright Vincotech
19
16 Nov. 2020 / Revision 2
10-F1166BA140RS01-M499G79
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-F1166BA140RS01-M499G79-D1-14
10-F1166BA140RS01-M499G79-D2-14
21 Sep. 2020
16 Nov. 2020
Features updated
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
16 Nov. 2020 / Revision 2
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