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10-FY07FCA200RG-LQ45L6 [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-FY07FCA200RG-LQ45L6
型号： 10-FY07FCA200RG-LQ45L6
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
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10-FY07FCA200RG-LQ45L60  
datasheet  
flowFC 1  
1200 V / 200 A  
Features  
flow 1 12 mm housing  
● Three-level flying capacitor topology  
● Ultra-fast 650V components  
● Integrated capacitor  
● Integrated NTC  
Schematic  
Target applications  
● General  
Types  
● 10-FY07FCA200RG-LQ45L60  
Copyright Vincotech  
1
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
AC 1 Switch L  
VCES  
Collector-emitter voltage  
650  
142  
800  
219  
±30  
175  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Tjmax  
Maximum junction temperature  
°C  
AC 1 Diode L  
VRRM  
Peak repetitive reverse voltage  
650  
149  
800  
200  
175  
V
A
IF  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
AC 1 Switch H  
VCES  
Collector-emitter voltage  
650  
142  
800  
219  
±30  
175  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
AC 1 Diode H  
VRRM  
Peak repetitive reverse voltage  
650  
149  
800  
200  
175  
V
A
IF  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
AC 2 Switch L  
VCES  
Collector-emitter voltage  
650  
142  
800  
219  
±30  
175  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Tjmax  
Maximum junction temperature  
°C  
AC 2 Diode L  
VRRM  
Peak repetitive reverse voltage  
650  
149  
800  
200  
175  
V
A
IF  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Copyright Vincotech  
3
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
AC 2 Switch H  
VCES  
Collector-emitter voltage  
650  
142  
800  
219  
±30  
175  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Tjmax  
Maximum junction temperature  
°C  
AC 2 Diode H  
VRRM  
Peak repetitive reverse voltage  
650  
149  
800  
200  
175  
V
A
IF  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Flying Capacitor  
VMAX  
Maximum DC voltage  
630  
V
Top  
Operation Temperature  
0 ... 125  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
tp = 1 min  
V
min. 12,7  
11,32  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
Copyright Vincotech  
4
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Switch L  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,132  
200  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,04  
0,8  
mA  
µA  
Ω
30  
None  
16800  
416  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
316  
15  
400  
200  
564  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,43  
K/W  
25  
205,44  
191,36  
187,2  
38,72  
40  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
39,68  
613,44  
657,28  
671,04  
22,3  
Rgon = 16 Ω  
Rgoff = 16 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
-5/15  
600  
160  
tf  
125  
150  
25  
15,31  
12,71  
9,8  
ns  
QrFWD=4,24 µC  
QrFWD=7,91 µC  
QrFWD=9,48 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
11,74  
12,35  
6,53  
mWs  
mWs  
Eoff  
125  
150  
7,65  
7,76  
Copyright Vincotech  
5
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Diode L  
Static  
25  
1,51  
1,57  
1,54  
1,9(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
40  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
111,24  
139,02  
148,44  
84,92  
118,6  
125,12  
4,24  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=4670 A/µs  
di/dt=4496 A/µs  
di/dt=4512 A/µs  
Qr  
Recovered charge  
-5/15  
600  
160  
125  
150  
25  
7,91  
μC  
9,48  
0,83  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
1,7  
mWs  
A/µs  
2,1  
4933  
3021  
2302  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
6
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Switch H  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,132  
200  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,04  
0,8  
mA  
µA  
Ω
30  
None  
16800  
416  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
316  
15  
400  
200  
564  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,43  
K/W  
25  
205,44  
191,36  
187,2  
38,72  
40  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
39,68  
613,44  
657,28  
671,04  
22,3  
Rgon = 16 Ω  
Rgoff = 16 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
-5/15  
600  
160  
tf  
125  
150  
25  
15,31  
12,71  
9,8  
ns  
QrFWD=4,24 µC  
QrFWD=7,91 µC  
QrFWD=9,48 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
11,74  
12,35  
6,53  
mWs  
mWs  
Eoff  
125  
150  
7,65  
7,76  
Copyright Vincotech  
7
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 1 Diode H  
Static  
25  
1,51  
1,57  
1,54  
1,9(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
40  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
111,24  
139,02  
148,44  
84,92  
118,6  
125,12  
4,24  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=4670 A/µs  
di/dt=4496 A/µs  
di/dt=4512 A/µs  
Qr  
Recovered charge  
-5/15  
600  
160  
125  
150  
25  
7,91  
μC  
9,48  
0,83  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
1,7  
mWs  
A/µs  
2,1  
4933  
3021  
2302  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
8
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Switch L  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,132  
200  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,04  
0,8  
mA  
µA  
Ω
30  
None  
16800  
416  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
316  
15  
400  
200  
564  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,43  
K/W  
25  
207,36  
193,28  
189,44  
34,24  
35,52  
35,84  
601,92  
645,76  
658,88  
17,03  
10,44  
10,61  
9,88  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 16 Ω  
Rgoff = 16 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
-5/15  
600  
160  
tf  
125  
150  
25  
ns  
QrFWD=4,02 µC  
QrFWD=7,75 µC  
QrFWD=9,33 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
11,63  
12,43  
6,48  
mWs  
mWs  
Eoff  
125  
150  
7,53  
7,9  
Copyright Vincotech  
9
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Diode L  
Static  
25  
1,51  
1,57  
1,54  
1,9(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
40  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
113,79  
141,42  
151,13  
84,55  
120,06  
127,75  
4,02  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=4858 A/µs  
di/dt=4791 A/µs  
di/dt=4823 A/µs  
Qr  
Recovered charge  
-5/15  
600  
160  
125  
150  
25  
7,75  
μC  
9,33  
0,757  
1,66  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
2,03  
5790  
(dirf/dt)max  
125  
150  
3653  
2742  
Copyright Vincotech  
10  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Switch H  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,132  
200  
25  
5
6
7
V
V
25  
1,5  
1,66  
1,7  
1,9(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
0,04  
0,8  
mA  
µA  
Ω
30  
None  
16800  
416  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
Reverse transfer capacitance  
Gate charge  
316  
15  
400  
200  
564  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,43  
K/W  
25  
207,36  
193,28  
189,44  
34,24  
35,52  
35,84  
601,92  
645,76  
658,88  
17,03  
10,44  
10,61  
9,88  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 16 Ω  
Rgoff = 16 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
-5/15  
600  
160  
tf  
125  
150  
25  
ns  
QrFWD=4,02 µC  
QrFWD=7,75 µC  
QrFWD=9,33 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
11,63  
12,43  
6,48  
mWs  
mWs  
Eoff  
125  
150  
7,53  
7,9  
Copyright Vincotech  
11  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC 2 Diode H  
Static  
25  
1,51  
1,57  
1,54  
1,9(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 650 V  
25  
40  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,48  
K/W  
25  
113,79  
141,42  
151,13  
84,55  
120,06  
127,75  
4,02  
IRRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=4858 A/µs  
di/dt=4791 A/µs  
di/dt=4823 A/µs  
Qr  
Recovered charge  
-5/15  
600  
160  
125  
150  
25  
7,75  
μC  
9,33  
0,757  
1,66  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
2,03  
5790  
(dirf/dt)max  
125  
150  
3653  
2742  
Copyright Vincotech  
12  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Flying Capacitor  
Static  
C
Capacitance  
Tolerance  
150  
nF  
%
-10  
10  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
-5  
5
5
mW  
mW/K  
K
d
25  
1,5  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
13  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switch L Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
200  
10  
-1  
150  
100  
50  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,434  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
4,93E-02  
8,20E-02  
2,21E-01  
6,21E-02  
2,00E-02  
3,24E+00  
5,53E-01  
8,77E-02  
1,34E-02  
1,18E-03  
Copyright Vincotech  
14  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switch L Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
15  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Diode L Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,475  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,99E-02  
9,30E-02  
2,16E-01  
8,25E-02  
3,36E-02  
3,52E+00  
4,57E-01  
7,66E-02  
9,31E-03  
5,55E-04  
Copyright Vincotech  
16  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switch H Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
200  
10  
-1  
150  
100  
50  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,434  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
4,93E-02  
8,20E-02  
2,21E-01  
6,21E-02  
2,00E-02  
3,24E+00  
5,53E-01  
8,77E-02  
1,34E-02  
1,18E-03  
Copyright Vincotech  
17  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switch H Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
18  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Diode H Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,475  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,99E-02  
9,30E-02  
2,16E-01  
8,25E-02  
3,36E-02  
3,52E+00  
4,57E-01  
7,66E-02  
9,31E-03  
5,55E-04  
Copyright Vincotech  
19  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switch L Characteristics  
figure 15.  
IGBT  
figure 16.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 17.  
IGBT  
figure 18.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
200  
10  
-1  
150  
100  
50  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,434  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
4,93E-02  
8,20E-02  
2,21E-01  
6,21E-02  
2,00E-02  
3,24E+00  
5,53E-01  
8,77E-02  
1,34E-02  
1,18E-03  
Copyright Vincotech  
20  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switch L Characteristics  
figure 19.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
21  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Diode L Characteristics  
figure 20.  
FWD  
figure 21.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,475  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,99E-02  
9,30E-02  
2,16E-01  
8,25E-02  
3,36E-02  
3,52E+00  
4,57E-01  
7,66E-02  
9,31E-03  
5,55E-04  
Copyright Vincotech  
22  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switch H Characteristics  
figure 22.  
IGBT  
figure 23.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 24.  
IGBT  
figure 25.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
200  
10  
-1  
150  
100  
50  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,434  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
4,93E-02  
8,20E-02  
2,21E-01  
6,21E-02  
2,00E-02  
3,24E+00  
5,53E-01  
8,77E-02  
1,34E-02  
1,18E-03  
Copyright Vincotech  
23  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switch H Characteristics  
figure 26.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
24  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Diode H Characteristics  
figure 27.  
FWD  
figure 28.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,475  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,99E-02  
9,30E-02  
2,16E-01  
8,25E-02  
3,36E-02  
3,52E+00  
4,57E-01  
7,66E-02  
9,31E-03  
5,55E-04  
Copyright Vincotech  
25  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Thermistor Characteristics  
figure 29.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
26  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics L  
figure 30.  
IGBT  
figure 31.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
30  
25  
20  
15  
10  
5
22,5  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
2,5  
0
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
16  
figure 32.  
FWD  
figure 33.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
27  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics L  
figure 34.  
IGBT  
figure 35.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(on)  
td(off)  
-1  
10  
0
10  
tr  
tf  
td(on)  
-2  
10  
-1  
10  
tr  
tf  
-3  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
-5/15  
16  
°C  
V
150  
600  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
-5/15  
160  
Ω
Ω
16  
figure 36.  
FWD  
figure 37.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
28  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics L  
figure 38.  
FWD  
figure 39.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
5,0  
Qr  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 40.  
FWD  
figure 41.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
200  
175  
150  
125  
100  
75  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
25  
0
0
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
29  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics L  
figure 42.  
FWD  
figure 43.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
7000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
6000  
5000  
4000  
3000  
2000  
1000  
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 44.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
16  
°C  
Ω
Rgon  
Rgoff  
=
=
16  
Ω
Copyright Vincotech  
30  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics H  
figure 45.  
IGBT  
figure 46.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
30  
25  
20  
15  
10  
5
22,5  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
2,5  
0
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
16  
figure 47.  
FWD  
figure 48.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
31  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics H  
figure 49.  
IGBT  
figure 50.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(on)  
td(off)  
-1  
10  
0
10  
tr  
tf  
td(on)  
-2  
10  
-1  
10  
tr  
tf  
-3  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
-5/15  
16  
°C  
V
150  
600  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
-5/15  
160  
Ω
Ω
16  
figure 51.  
FWD  
figure 52.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
32  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics H  
figure 53.  
FWD  
figure 54.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
5,0  
Qr  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 55.  
FWD  
figure 56.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
200  
175  
150  
125  
100  
75  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
25  
0
0
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
33  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 1 Switching Characteristics H  
figure 57.  
FWD  
figure 58.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
7000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
6000  
5000  
4000  
3000  
2000  
1000  
0
0
50  
100  
150  
200  
250  
300  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 59.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
16  
°C  
Ω
Rgon  
Rgoff  
=
=
16  
Ω
Copyright Vincotech  
34  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics L  
figure 60.  
IGBT  
figure 61.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
25  
20  
15  
10  
5
22,5  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
2,5  
0
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
16  
figure 62.  
FWD  
figure 63.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
35  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics L  
figure 64.  
IGBT  
figure 65.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(on)  
td(off)  
-1  
0
10  
10  
tr  
tf  
td(on)  
-2  
10  
-1  
10  
tr  
tf  
-3  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
-5/15  
16  
°C  
V
150  
600  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
-5/15  
160  
Ω
Ω
16  
figure 66.  
FWD  
figure 67.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
36  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics L  
figure 68.  
FWD  
figure 69.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
5,0  
Qr  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 70.  
FWD  
figure 71.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
200  
175  
150  
125  
100  
75  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
25  
0
0
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
37  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics L  
figure 72.  
FWD  
figure 73.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
7000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
6000  
5000  
4000  
3000  
2000  
1000  
0
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Ω
figure 74.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
16  
°C  
Ω
Rgon  
Rgoff  
=
=
16  
Ω
Copyright Vincotech  
38  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics H  
figure 75.  
IGBT  
figure 76.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
25  
20  
15  
10  
5
22,5  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
2,5  
0
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
16  
figure 77.  
FWD  
figure 78.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
39  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics H  
figure 79.  
IGBT  
figure 80.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(on)  
td(off)  
-1  
0
10  
10  
tr  
tf  
td(on)  
-2  
10  
-1  
10  
tr  
tf  
-3  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
-5/15  
16  
°C  
V
150  
600  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
-5/15  
160  
Ω
Ω
16  
figure 81.  
FWD  
figure 82.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
Ω
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
40  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics H  
figure 83.  
FWD  
figure 84.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
15,0  
12,5  
10,0  
7,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
5,0  
Qr  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 85.  
FWD  
figure 86.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
200  
175  
150  
125  
100  
75  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
25  
0
0
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
41  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
AC 2 Switching Characteristics H  
figure 87.  
FWD  
figure 88.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
7000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
6000  
5000  
4000  
3000  
2000  
1000  
0
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
-5/15  
16  
V
V
125 °C  
150 °C  
600  
-5/15  
160  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Ω
figure 89.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
V
CE(V)  
Tj =  
At  
150  
16  
°C  
Ω
Rgon  
Rgoff  
=
=
16  
Ω
Copyright Vincotech  
42  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Switching Definitions  
figure 90.  
IGBT  
figure 91.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 92.  
IGBT  
figure 93.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
43  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Switching Definitions  
figure 94.  
FWD  
figure 95.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
44  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Ordering Code  
Marking  
Version  
Ordering Code  
Without thermal paste  
With thermal paste  
10-FY07FCA200RG-LQ45L60  
10-FY07FCA200RG-LQ45L60-/3/  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
Ph  
14,35  
7,25  
7,25  
0
0
2
2,6  
Ph  
3
0
Ph  
4
2,6  
Ph  
5
0
0
Ph  
6
3,7  
28,5  
28,5  
28,5  
28,5  
28,5  
28,5  
28,5  
28,5  
28,5  
24,55  
24,2  
8,8  
DC-  
DC-  
DC-  
DC-  
DC+  
DC+  
DC+  
DC+  
Therm1  
Therm2  
FC+  
FC+  
FC+  
FC+  
FC-  
7
6,3  
8
8,9  
9
11,5  
21,7  
24,3  
26,9  
29,5  
40,15  
42,6  
19,55  
18,55  
18,55  
18,55  
13,65  
13,95  
12,5  
13,45  
31,8  
31,8  
31,9  
31,9  
0,7  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
6,2  
3,6  
24,2  
17,2  
14,5  
11,8  
18  
FC-  
FC-  
FC-  
G11  
S11  
G13  
S13  
S12  
G12  
S14  
G14  
15  
4,45  
1,45  
25,3  
22,3  
11,55  
8,55  
29  
30  
31  
0,7  
0,7  
0,7  
Copyright Vincotech  
45  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Pinout  
DC+  
10-13  
T11  
T13  
T14  
T12  
D12  
D14  
D13  
D11  
G11  
24  
S11  
25  
FC+  
16-19  
G13  
26  
S13  
27  
C30  
Ph  
01-05  
G14  
31  
S14  
30  
FC-  
20-23  
G12  
29  
S12  
Rt  
28  
DC-  
06-09  
Therm1  
14  
Therm2  
15  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T12  
D11  
T11  
D12  
T14  
D13  
T13  
D14  
C30  
Rt  
IGBT  
FWD  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
650 V  
630 V  
200 A  
200 A  
200 A  
200 A  
200 A  
200 A  
200 A  
200 A  
AC 1 Switch L  
AC 1 Diode L  
AC 1 Switch H  
AC 1 Diode H  
AC 2 Switch L  
AC 2 Diode L  
AC 2 Switch H  
AC 2 Diode H  
Flying Capacitor  
Thermistor  
IGBT  
FWD  
IGBT  
FWD  
IGBT  
FWD  
Capacitor  
Thermistor  
Copyright Vincotech  
46  
09 Jun. 2020 / Revision 1  
10-FY07FCA200RG-LQ45L60  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-FY07FCA200RG-LQ45L60-D1-14  
9 Jun. 2020  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
47  
09 Jun. 2020 / Revision 1  

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