10-FY07HVA075S5-L985F08 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FY07HVA075S5-L985F08 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总39页 (文件大小：4640K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
flowPACK 1 H6.5
650 V / 75 A
Features
flow 1 12 mm housing
● Innovative H6.5 Topology
● IGBT S5 + IGBT L5
● NTC
Press-fit
Solder
Schematic
Target applications
● Solar Inverters
● Special Application
Types
● 10-FY07HVA075S5-L985F08
● 10-PY07HVA075S5-L985F08Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
High Buck Switch / Low Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
58
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
225
86
A
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
47
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
100
63
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
Collector-emitter voltage
650
84
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
tp limited by Tjmax
Tj ≤ 175 °C, VCE ≤ 650 V
Tj = Tjmax
225
300
95
A
A
Ptot
Ts = 80 °C
W
V
VGES
Gate-emitter voltage
±20
175
Maximum junction temperature
°C
T
jmax
Low Boost Diode / High Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
47
V
A
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
100
63
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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10-PY07HVA075S5-L985F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
7,99
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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10-PY07HVA075S5-L985F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
High Buck Switch / Low Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75
VCEsat
Collector-emitter saturation voltage
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,10
K/W
25
31
31
31
td(on)
125
150
25
Turn-on delay time
10
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
10
11
110
126
132
10
Rgon = 4 Ω
Rgoff = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
-5 / 15
350
75
tf
25
32
0,450
0,701
0,758
0,457
0,875
Qr
FWD
Qr
FWD
Qr
FWD
= 2,2 μC
= 4 μC
= 4,7 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,023
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,50
1,44
1,42
1,92
2,65
VF
IR
125
150
Forward voltage
50
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,50
K/W
25
86
110
117
IRRM
125
150
25
Peak recovery current
A
55
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
87
101
ns
di/dt = 5329 A/μs
di/dt = 8023 A/μs
di/dt = 7260 A/μs
2,18
4,04
4,70
0,381
0,838
1,021
5984
4040
4174
-5 / 15
350
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,001
75
25
4,2
5
5,8
V
V
25
1,10
1,08
1,09
1,45
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
100
none
11625
150
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
30
15
520
75
436
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,00
K/W
Dynamic (T21,D12)
25
123
121
120
9
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
8
8
Rgon = 4 Ω
Rgoff = 4 Ω
ns
189
215
221
53
217
257
0,171
0,164
0,200
3,189
4,647
td(off)
Turn-off delay time
Fall time
±15
350
75
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 2,1 μC
= 3,8 μC
= 4,4 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
5,023
Copyright Vincotech
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10-PY07HVA075S5-L985F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Boost Diode
Static
25
1,50
1,44
1,42
1,92
2,65
VF
IR
125
150
Forward voltage
50
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,50
K/W
Dynamic (T21,D12)
25
76
IRRM
125
150
25
101
105
58
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
89
101
ns
di/dt = 7349 A/μs
di/dt = 6426 A/μs
di/dt = 7461 A/μs
2,102
3,817
4,395
0,623
0,986
1,148
4813
3089
2758
±15
350
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
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04 Jul. 2019 / Revision 3
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10-PY07HVA075S5-L985F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,001
75
25
4,2
5
5,8
V
V
25
1,10
1,08
1,09
1,45
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
100
none
11625
150
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
30
15
520
75
436
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic (T21, D20)
Turn-on delay time
1,00
K/W
25
117
112
112
12
td(on)
125
150
25
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
7
8
Rgon = 4 Ω
Rgoff = 4 Ω
ns
187
214
222
56
218
256
0,375
0,479
0,528
3,056
4,452
td(off)
Turn-off delay time
Fall time
±15
350
75
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 2 μC
= 4 μC
= 4,6 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
4,791
Copyright Vincotech
8
04 Jul. 2019 / Revision 3
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10-PY07HVA075S5-L985F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
High Boost Diode
Static
25
1,50
1,44
1,42
1,92
2,65
VF
IR
125
150
Forward voltage
50
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic (T21, D20)
Peak recovery current
1,50
K/W
25
64
109
114
63
IRRM
125
150
25
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
91
102
ns
di/dt = 7627 A/μs
di/dt = 7440 A/μs
di/dt = 7597 A/μs
2,033
4,017
4,576
0,556
0,853
1,006
2384
5443
4708
±15
350
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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10-PY07HVA075S5-L985F08Y
datasheet
High Buck Switch / Low Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,10
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
Copyright Vincotech
10
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10-PY07HVA075S5-L985F08Y
datasheet
High Buck Switch / Low Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
11
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10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,50
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Copyright Vincotech
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10-PY07HVA075S5-L985F08Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,00
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,80E-02
1,67E-01
5,38E-01
1,47E-01
3,80E-02
1,88E-02
2,68E+00
3,70E-01
8,09E-02
1,56E-02
3,42E-03
5,45E-04
Copyright Vincotech
13
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10-PY07HVA075S5-L985F08Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C
=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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datasheet
Low Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,50
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Copyright Vincotech
15
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
Z
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,00
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,80E-02
1,67E-01
5,38E-01
1,47E-01
3,80E-02
1,88E-02
2,68E+00
3,70E-01
8,09E-02
1,56E-02
3,42E-03
5,45E-04
Copyright Vincotech
16
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
V
D =
single pulse
80 ºC
I C
=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
17
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
High Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,50
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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04 Jul. 2019 / Revision 3
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10-PY07HVA075S5-L985F08Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
-5 / 15
R gon
R goff
4
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
-5 / 15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
-5 / 15
4
°C
V
Tj =
150
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
75
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
25 °C
At
VCE
=
350
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
VGE
=
=
-5 / 15
4
Tj:
VGE
I C
=
-5 / 15
75
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
At
VCE
VGE
R gon
=
350
V
V
Ω
At
VCE
VGE
I C
=
350
-5 / 15
75
V
V
A
25 °C
=
-5 / 15
4
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
At
VCE
=
350
V
V
Ω
At
VCE
VGE
I C
=
350
-5 / 15
75
V
V
A
25 °C
VGE
=
=
-5 / 15
4
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
At
VCE
=
350
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
-5 / 15
75
V
V
A
25 °C
125 °C
150 °C
VGE
R gon
=
=
-5 / 15
4
=
Tj:
Tj:
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
4
4
Ω
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Buck Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
4 Ω
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-5
V
VGE (0%) =
-5
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
75
V
350
75
V
A
A
tdoff
=
126
ns
tdon
=
31
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
75
V
VC (100%) =
I C (100%) =
350
75
V
A
A
25
ns
tr
=
10
ns
Copyright Vincotech
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04 Jul. 2019 / Revision 3
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10-PY07HVA075S5-L985F08Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
75
V
I F (100%) =
Q r (100%) =
75
A
A
4,04
μC
110
87
A
trr
=
ns
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Low Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
4
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Low Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
4
°C
V
Tj =
150
350
±15
75
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
350
25 °C
At
VCE
=
V
V
Ω
At
VCE
=
350
±15
75
V
V
A
25 °C
VGE
=
=
±15
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
4
=
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Low Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
At
VCE
VGE
R gon
=
350
±15
4
V
V
Ω
At
VCE
VGE
I C
=
350
±15
75
V
V
A
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
350
±15
4
V
V
Ω
At
VCE
VGE
I C
=
350
±15
75
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Low Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
At
VCE
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
75
V
V
A
25 °C
125 °C
150 °C
VGE
=
=
=
Tj:
Tj:
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
4
4
Ω
Copyright Vincotech
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04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Low Boost Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
4 Ω
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
75
V
350
75
V
A
A
tdoff
=
215
ns
tdon
=
121
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
75
V
VC (100%) =
I C (100%) =
350
75
8
V
A
A
217
ns
tr
=
ns
Copyright Vincotech
29
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Low Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
75
V
I F (100%) =
Q r (100%) =
75
A
A
3,82
μC
101
89
A
trr
=
ns
Copyright Vincotech
30
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
High Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
4
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
±15
4
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
75
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
31
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
High Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
4
°C
V
Tj =
150
350
±15
75
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
25 °C
At
VCE
=
350
±15
4
V
V
Ω
At
VCE
=
350
V
V
A
25 °C
VGE
=
=
Tj:
VGE
I C
=
±15
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
75
Copyright Vincotech
32
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
High Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
At
VCE
VGE
R gon
=
350
±15
4
V
V
Ω
At
VCE
VGE
I C
=
350
±15
75
V
V
A
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
At
VCE
=
350
±15
4
V
V
Ω
At
VCE
VGE
I C
=
350
±15
75
V
V
A
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
33
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
High Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
At
VCE
=
350
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
75
V
V
A
25 °C
VGE
R gon
=
=
=
125 °C
Tj:
Tj:
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
4
4
Ω
Copyright Vincotech
34
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
High Boost Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
4 Ω
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
75
V
350
75
V
A
A
tdoff
=
214
ns
tdon
=
112
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
75
V
VC (100%) =
I C (100%) =
350
75
7
V
A
A
218
ns
tr
=
ns
Copyright Vincotech
35
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
High Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
75
V
I F (100%) =
Q r (100%) =
75
A
A
4,02
μC
109
91
A
trr
=
ns
Copyright Vincotech
36
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with press-fit pins
Ordering Code
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
0
Function
G14
52,2
49,2
1
2
S14
3
4
Not assembled
26,1
0
0
Therm2
5
23,1
Therm1
S12
6
3
0
0
0
0
0
7
0
G12
8
8
DC+
9
10,5
17,7
DC+
10
DC-1
11
12
13
0
0
3
20,2
28,2
28,2
DC-1
G11
S11
14
15
16
17
18
19
20
21
22
10
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
G21
S21
Ph2
Ph2
Ph1
Ph1
S22
G22
S13
13
20,35
22,85
29,35
31,85
39,2
42,2
49,2
23
24
25
26
27
28
52,2
52,2
52,2
52,2
52,2
26,1
28,2
20,2
17,7
10,5
8
G13
DC-2
DC-2
DC+
DC+
A20
22,1
Copyright Vincotech
37
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12 , T13, T14
IGBT
650 V
75 A
50 A
75 A
50 A
High Buck Switch / Low Buck Switch
Buck Diode
D21, D22
T21, T22
D12, D14, D20
Rt
FWD
IGBT
FWD
NTC
650 V
650 V
650 V
Boost Switch
Low Boost Diode / High Boost diode
Thermistor
Copyright Vincotech
38
04 Jul. 2019 / Revision 3
10-FY07HVA075S5-L985F08
10-PY07HVA075S5-L985F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07HVA075S5-L985F08x-D3-14
04 Jul. 2019
Correction of Ic/If values
2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
39
04 Jul. 2019 / Revision 3
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