10-FY07NPA150SM02-L365F08 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FY07NPA150SM02-L365F08 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总29页 (文件大小：9111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07NPA150SM02-L365F08
datasheet
1200 V / 150 A
flowNPC 1
Features
flow 1 12 mm housing
● NPC inverter topology
● Optimized for full rated bi-directional usage (4quadrant)
● Optimized for 1200 Vdc applications
● High-speed IGBT in all switch positions
● Integrated NTC
● Low inductive design with integrated DC capacitor
● flow 1 12mm package
Schematic
Target applications
● Energy Storage Systems
● Solar Inverters
● UPS
Types
● 10-FY07NPA150SM02-L365F08
Copyright Vincotech
1
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
83
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
450
128
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
650
86
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
300
113
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
Collector-emitter voltage
650
83
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
450
128
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
650
86
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
300
113
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
650
108
300
149
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,07
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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10-FY07NPA150SM02-L365F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0015
150
25
3,3
4
4,7
V
V
25
1,7
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,89
1,94
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
240
None
8600
150
32
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 520 V
15
150
332
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,74
K/W
25
47,6
46,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
45,6
10,6
tr
125
150
25
12,2
13,2
Rgon = 2 Ω
Rgoff = 2 Ω
133,4
151,8
156,2
7,04
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
90
tf
125
150
25
7,09
ns
7,7
QrFWD=3,8 µC
QrFWD=7,08 µC
QrFWD=8,09 µC
0,737
1,12
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,21
0,367
0,706
0,798
Eoff
125
150
Copyright Vincotech
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10-FY07NPA150SM02-L365F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,67
1,66
1,66
1,92(1)
VF
IR
Forward voltage
150
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
7,6
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,84
K/W
25
110,05
143,32
151,37
52,28
84,92
95,83
3,8
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=7000 A/µs
di/dt=7124 A/µs
di/dt=6971 A/µs
Qr
Recovered charge
-5/15
350
90
125
150
25
7,08
μC
8,09
0,853
1,61
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,85
2642
2119
2131
(dirf/dt)max
125
150
Copyright Vincotech
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10-FY07NPA150SM02-L365F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0015
150
25
3,3
4
4,7
V
V
25
1,7
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,89
1,94
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
240
None
8600
150
32
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 520 V
15
150
332
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,74
K/W
25
50,2
50,6
50
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
11,2
13,4
14
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
114,2
134,4
138,6
5,07
7,41
8,47
1,1
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
90
tf
125
150
25
ns
QrFWD=3,6 µC
QrFWD=6,94 µC
QrFWD=7,94 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,77
1,92
0,243
0,621
0,719
mWs
mWs
Eoff
125
150
Copyright Vincotech
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10-FY07NPA150SM02-L365F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,67
1,66
1,66
1,92(1)
VF
IR
Forward voltage
150
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
7,6
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,84
K/W
25
89,81
116,5
121,4
60,9
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
97,24
109,23
3,6
ns
di/dt=5600 A/µs
di/dt=6000 A/µs
di/dt=5796 A/µs
Qr
Recovered charge
-5/15
350
90
125
150
25
6,94
μC
7,94
0,692
1,33
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,53
1618
1020
864,39
(dirf/dt)max
125
150
Copyright Vincotech
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10-FY07NPA150SM02-L365F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
1,18
1,66
1,61
1,59
1,82(1)
VF
IR
Forward voltage
150
125
150
V
Reverse leakage current
Vr = 650 V
25
1,8
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,64
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
300
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 8 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
D =
tp / T
0,74
25 °C
VCE
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,09E-01
2,21E-01
2,87E-01
8,43E-02
3,94E-02
1,94E+00
2,60E-01
6,98E-02
8,29E-03
3,67E-04
Copyright Vincotech
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17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,843
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,09E-02
1,45E-01
3,25E-01
2,06E-01
8,27E-02
2,35E-02
4,33E+00
8,74E-01
1,39E-01
4,67E-02
9,15E-03
1,16E-03
Copyright Vincotech
11
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 8 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
D =
tp / T
0,74
25 °C
VCE
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,09E-01
2,21E-01
2,87E-01
8,43E-02
3,94E-02
1,94E+00
2,60E-01
6,98E-02
8,29E-03
3,67E-04
Copyright Vincotech
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17 Mar. 2021 / Revision 8
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datasheet
Boost Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,843
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,09E-02
1,45E-01
3,25E-01
2,06E-01
8,27E-02
2,35E-02
4,33E+00
8,74E-01
1,39E-01
4,67E-02
9,15E-03
1,16E-03
Copyright Vincotech
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datasheet
Boost Sw. Inv. Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,638
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,14E-02
1,03E-01
2,81E-01
1,21E-01
4,83E-02
2,26E-02
3,48E+00
5,85E-01
9,46E-02
2,14E-02
5,07E-03
5,92E-04
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Buck Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
Ω
Ω
2
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
17
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
td(on)
tr
tf
tr
tf
-2
-2
10
10
10
10
-3
-3
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
2
°C
150
350
-5/15
90
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
2
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Buck Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
15,0
12,5
10,0
7,5
12
10
8
Qr
Qr
Qr
Qr
6
Qr
5,0
4
Qr
2,5
2
0,0
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
Copyright Vincotech
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17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
9000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
175
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
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17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Boost Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Rgon
Rgoff
Ω
Ω
2
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
21
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
-1
10
td(on)
tr
tf
tr
tf
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
2
°C
150
350
-5/15
90
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
2
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Boost Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
15,0
12,5
10,0
7,5
9
8
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
5,0
2,5
0,0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
Copyright Vincotech
23
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
8000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
24
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-FY07NPA150SM02-L365F08
10-FY07NPA150SM02-L365F08-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
Therm1
Therm2
S4
52,2
52,2
36,2
33,2
33,2
9,2
6,2
6,2
2,7
0
6,9
0
2
3
6,75
7,9
4
G14
G18
S2
5
4,9
6
5,75
6,9
7
G12
G16
DC-
DC-
DC-
DC-
DC-
DC-
GND
GND
GND
GND
DC+
DC+
DC+
DC+
DC+
DC+
S1
8
3,9
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
0
2,7
0
2,7
2,7
2,7
0
5,4
5,4
2,7
0
12,75
12,75
15,45
15,45
22,8
22,8
25,5
25,5
28,2
28,2
22,45
21,3
24,3
22,15
21
2,7
0
2,7
0
2,7
0
2,7
0
18,3
21,3
21,3
43
G15
G11
S3
46
G17
G13
Ph
46
24
52,2
49,5
52,2
49,5
52,2
49,5
52,2
20,1
22,8
22,8
25,5
25,5
28,2
28,2
Ph
Ph
Ph
Ph
Ph
Ph
Copyright Vincotech
27
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Pinout
DC+
19,20,21,22,23,24
T11
27
T15
D14
D18
26
C1
G11
S1
G15
25
T13
T17
D43
D47
D11
30
29
G13
S3
G17
28
GND
Ph
15,16,17,18
31,32,33,34,35,36,37
T18
T14
D44
D48
D12
4
5
G14
S4
G18
3
C2
Rt
T12
T16
D13
D17
7
8
G12
S2
G16
Therm1
1
Therm2
2
DC-
6
9,10,11,12,13,14
Identification
Component
Voltage
Current
Function
Comment
ID
Parallel devices with separate control. Values apply
T11, T15, T12, T16
D11, D12
IGBT
FWD
IGBT
650 V
650 V
650 V
150 A
150 A
150 A
Buck Switch
Buck Diode
Boost Switch
to complete device (T11||T15, T12||T16).
Parallel devices with separate control. Values apply
to complete device (T13||T17, T14||T18).
Parallel devices. Values apply
T13, T17, T14, T18
D13, D17, D14, D18
D44, D48, D43, D47
FWD
FWD
650 V
150 A
150 A
Boost Diode
to complete device (D13||D17, D14||D18).
Parallel devices. Values apply
to complete device (D44||D48, D43||D47).
650 V
Boost Sw. Inv. Diode
C1, C2
Rt
Capacitor
630 V
Capacitor (DC)
Thermistor
Thermistor
Copyright Vincotech
28
17 Mar. 2021 / Revision 8
10-FY07NPA150SM02-L365F08
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correct Vce conditions from 700V to 350V for Buck & Boost
Switches and Diodes in all dynamic & switching characteristics
4-7, 17-24
10-FY07NPA150SM02-L365F08-D8-14
17 Mar. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
17 Mar. 2021 / Revision 8
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Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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