10-FY123BA080SH03-LN28L47 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;型号: | 10-FY123BA080SH03-LN28L47 |
厂家: | VINCOTECH |
描述: | Easy paralleling;High speed switching;Low switching losses |
文件: | 总22页 (文件大小:7420K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FY123BA080SH03-LN28L47
datasheet
flow3xBOOST 1
1200 V / 80 A
Features
flow 1 12 mm housing
● High Efficiency Triple Booster
● Latest IGBT and SiC Technology
● Integrated NTC
● Compact Design
● Low inductance housing
Schematic
Target applications
● Solar Inverters
Types
● 10-FY123BA080SH03-LN28L47
Copyright Vincotech
1
22 Apr. 2020 / Revision 1
10-FY123BA080SH03-LN28L47
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
1200
76
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
240
186
±20
10
A
Ptot
W
V
VGES
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
28
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
92
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
66
A
Tj = Tjmax
87
W
°C
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
1600
25
V
A
IFAV
IFSM
I2t
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
200
200
37
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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10-FY123BA080SH03-LN28L47
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
ByPass Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
38
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
270
370
47
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
8,12
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
80
25
5,3
5,8
6,3
V
V
25
1,78
1,99
2,33
2,41
2,42
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
10
µA
nA
Ω
20
240
None
4660
300
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
260
VCC = 960 V
15
80
370
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,51
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
36,8
35,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
34,24
19,52
22,08
22,4
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
379,2
466,56
491,2
21,23
52,12
61,37
1,39
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
700
45
tf
125
150
25
ns
QrFWD=0,107 µC
QrFWD=0,11 µC
QrFWD=0,112 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,54
mWs
mWs
1,55
1,94
Eoff
125
150
3,32
3,61
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,43
1,74
1,84
20
1,6
VF
IR
Forward voltage
20
125
150
25
V
400
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
160
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,09
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
12,95
12,89
12,74
10,96
11,12
11,22
0,107
0,11
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2770 A/µs
di/dt=2739 A/µs
di/dt=2600 A/µs
Qr
Recovered charge
0/15
700
45
125
150
25
μC
0,112
0,024
0,025
0,025
3208
3074
3077
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,12
1,03
1,02
1,5
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,87
K/W
*Only valid with pre-applied Vincotech thermal interface material.
ByPass Diode
Static
25
1,15
1,1
1,5
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,5
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
Copyright Vincotech
7
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
250
250
VGE
:
7 V
8 V
9 V
200
150
100
50
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
2,5
5,0
7,5
10,0
12,5
2,5
5,0
7,5
10,0
12,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
80
10
-1
60
40
20
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,512
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,50E-02
1,84E-01
1,81E-01
3,37E-02
1,79E-02
1,05E+00
1,66E-01
6,37E-02
7,18E-03
6,47E-04
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
9
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datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,093
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,73E-02
1,05E-01
5,77E-01
1,79E-01
1,16E-01
6,86E-02
2,96E+00
4,20E-01
8,31E-02
2,65E-02
5,49E-03
1,07E-03
Copyright Vincotech
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10-FY123BA080SH03-LN28L47
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
Rectifier
figure 9.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,869
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,65E-02
1,70E-01
6,15E-01
6,94E-01
2,16E-01
1,19E-01
8,90E+00
1,08E+00
1,58E-01
5,21E-02
6,16E-03
1,06E-03
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datasheet
ByPass Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,5
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,44E-02
3,47E-01
7,44E-01
2,04E-01
1,11E-01
2,48E+00
3,51E-01
7,63E-02
1,21E-02
1,25E-03
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Boost Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
Ω
125 °C
150 °C
700
0/15
45
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,10
0,08
0,06
0,04
0,02
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
-1
10
0
10
tf
td(on)
tr
-2
10
-1
10
td(on)
tr
tf
-3
10
-2
10
0
20
40
60
80
100
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
8
°C
V
150
700
0/15
45
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
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datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
45
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
16
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datasheet
Boost Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
8
V
V
Ω
125 °C
150 °C
700
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
17
22 Apr. 2020 / Revision 1
10-FY123BA080SH03-LN28L47
datasheet
Boost Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
18
22 Apr. 2020 / Revision 1
10-FY123BA080SH03-LN28L47
datasheet
Boost Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
19
22 Apr. 2020 / Revision 1
10-FY123BA080SH03-LN28L47
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-FY123BA080SH03-LN28L47
10-FY123BA080SH03-LN28L47-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+In3
DC+In3
Boost3
46,2
46,2
37,2
37,2
27,6
27,6
18,6
18,6
9
0
2,4
0
2
3
4
2,4
0
Boost3
5
DC+In2
DC+In2
Boost2
6
2,4
0
7
8
2,4
0
Boost2
9
DC+In1
DC+In1
Boost1
10
11
12
13
14
15
16
17
9
2,4
0
0
0
2,4
9
Boost1
0
DC+Boost1
0
11,4 DC+Boost1
1
25,2
28,2
28,2
G25
S25
0
12,6
DC-
Boost1
DC-
18
15
28,2
Boost1
S27
19
20
21
18
19
28,2
25,2
28,2
G27
30,6
DC-
Boost2
DC-
22
33
28,2
Boost2
S29
23
24
25
36
37
28,2
25,2
28,2
G29
49,8
DC-
Boost3
DC-
26
52,2
28,2
Boost3
Therm1
Therm2
27
28
29
30
31
32
52,2
52,2
37,2
37,2
18,6
18,6
20,35
17,35
11,4 DC+Boost3
DC+Boost3
11,4 DC+Boost2
DC+Boost2
9
9
Copyright Vincotech
20
22 Apr. 2020 / Revision 1
10-FY123BA080SH03-LN28L47
datasheet
Pinout
Identification
Component
Voltage
Current
Function
Comment
ID
T25, T27, T29
D25, D27, D29
D45, D47, D49
D26, D28, D30
Rt
IGBT
FWD
1200 V
1200 V
1600 V
1600 V
80 A
20 A
18 A
28 A
Boost Switch
Boost Diode
Rectifier
Rectifier
Thermistor
Boost Sw. Protection Diode
ByPass Diode
Thermistor
Copyright Vincotech
21
22 Apr. 2020 / Revision 1
10-FY123BA080SH03-LN28L47
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY123BA080SH03-LN28L47-D1-14
22 Apr. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
22 Apr. 2020 / Revision 1
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