10-FY12NMA160SH01-M820F18 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-FY12NMA160SH01-M820F18 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总26页 (文件大小：1025K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10ꢀFY12NMA160SH01ꢀM820F18
10ꢀPY12NMA160SH01ꢀM820F18Y
datasheet
flow MNPC 1
1200 V / 160 A
Features
flow 1 12mm housing
● mixed voltage NPC topology
● reactive power capability
● low inductance layout
● Split output
● enhanced LVRT capability
Target Applications
Schematic
● solar inverter
● UPS
● Active frontend
Types
● 10ꢀFY12NMA160SH01ꢀM820F18
● 10ꢀPY12NMA160SH01ꢀM820F18Y
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Halfbridge IGBT Inverse Diode
Repetitive peak reverse voltage
Forward current
V RRM
I FAV
I FSM
P tot
1200
V
A
Th=80°C
Tc=80°C
14
19
DC current
tp=10ms
Tj=25°C
Repetitive peak forward current
Power dissipation
14
A
Th=80°C
Tc=80°C
31
47
Tj=Tjmax
W
°C
T jmax
Maximum Junction Temperature
150
Halfbridge IGBT
V CES
I C
Collectorꢀemitter break down voltage
DC collector current
1200
V
A
Th=80°C
Tc=80°C
117
151
Tj=Tjmax
I CRM
tp limited by Tjmax
Pulsed collector current
Turn off safe operating area
Power dissipation
480
480
A
Tj≤150°C
VCE<=VCES
A
Th=80°C
Tc=80°C
260
394
P tot
V GE
Tj=Tjmax
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
Tj≤150°C
VGE=15V
10
µs
V
V CC
800
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
17 Apr. 2015 / Revision 2
10ꢀFY12NMA160SH01ꢀM820F18
10ꢀPY12NMA160SH01ꢀM820F18Y
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
NP Diode
V RRM
I F
P tot
T jmax
Peak Repetitive Reverse Voltage
DC forward current
700
V
A
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
53
72
63
96
Tj=Tjmax
Tj=Tjmax
Power dissipation
W
°C
Maximum Junction Temperature
150
NP IGBT
V CES
I C
Collectorꢀemitter break down voltage
DC collector current
650
V
A
Th=80°C
Tc=80°C
76
Tj=Tjmax
101
I CRM
tp limited by Tjmax
Pulsed collector current
Turn off safe operating area
Power dissipation
450
450
A
Tj≤150°C
VCE<=VCES
A
Th=80°C
Tc=80°C
96
P tot
V GE
Tj=Tjmax
W
V
145
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
Tj≤150°C
VGE=15V
6
µs
V
V CC
360
T jmax
Maximum Junction Temperature
175
°C
NP Inverse Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
DC forward current
650
V
A
Th=80°C
Tc=80°C
15
21
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation
30
A
Th=80°C
Tc=80°C
28
42
W
°C
T jmax
Maximum Junction Temperature
175
Halfbridge Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
Th=80°C
Tc=80°C
31
46
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation
140
A
Th=80°C
Tc=80°C
61
92
W
°C
T jmax
Maximum Junction Temperature
150
copyright Vincotech
2
17 Apr. 2015 / Revision 2
10ꢀFY12NMA160SH01ꢀM820F18
10ꢀPY12NMA160SH01ꢀM820F18Y
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
DC link Capacitor
V MAX
Max.DC voltage
Tc=25°C
630
V
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
ꢀ40…+(Tjmax ꢀ 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V is
t=2s
DC voltage
4000
V
min 12,7
min 8,06
mm
mm
copyright Vincotech
3
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] or I C [A] or
V GE [V] or
V GS [V]
V CE [V] or I F [A] or
T j
Min
Max
V DS [V]
I D [A]
Halfbridge IGBT Inverse Diode
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,97
1,65
2,7
V F
I r
7
V
0,25
Reverse current
1200
mA
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance chip to heatsink
2,24
K/W
Halfbridge IGBT
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,80
6,5
2,70
0,25
480
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
VCE=VGE
0,006
160
V
V
2,02
2,37
15
0
1200
0
mA
nA
ꢁ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
127
129
26
Rise time
30
ns
219
274
45
t d(off)
t f
Turnꢀoff delay time
Rgoff=4 ꢁ
Rgon=4 ꢁ
±15
350
100
Fall time
59
1,52
2,60
2,69
4,19
E on
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
pF
E off
C ies
C oss
C rss
Q G
9200
600
540
740
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
960
160
150
100
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance chip to heatsink
0,37
K/W
NP Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,00
1,88
2,6
50
V F
I r
Diode forward voltage
V
µA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
700
350
86
113
57
109
2,93
7,16
3683
1519
0,53
1,38
I RRM
t rr
A
ns
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=4 ꢁ
±15
µC
( di rf/dt )max
E rec
A/µs
mWs
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance chip to heatsink
1,11
K/W
copyright Vincotech
4
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] or I C [A] or
V GE [V] or
V GS [V]
V CE [V] or I F [A] or
T j
Min
Max
V DS [V]
I D [A]
NP IGBT
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
1,85
0,05
700
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
VCE=VGE
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff incl diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
0,008
150
V
V
1,05
1,48
1,62
15
0
650
0
mA
nA
ꢁ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
170
171
29
Rise time
31
ns
235
265
54
t d(off)
t f
Turnꢀoff delay time
Rgoff=4 ꢁ
Rgon=4 ꢁ
±15
350
100
Fall time
71
1,29
1,70
2,88
3,95
E on
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
E off
C ies
9240
C oss
C rss
Output capacitance
f=1MHz
0
25
Tj=25°C
276
pF
Reverse transfer capacitance
274
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance chip to heatsink
0,99
K/W
NP Inverse Diode
Tj=25°C
Tj=125°C
1,23
1,89
1,79
2,20
V F
Diode forward voltage
15
V
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance chip to heatsink
3,43
K/W
Halfbridge Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,46
2,07
3,5
V F
I r
Diode forward voltage
150
100
V
ꢂA
200
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
350
83
116
113
I RRM
t rr
A
ns
136
6,17
12,86
2952
3586
1,66
3,63
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=4 ꢁ
±15
µC
( di rf/dt )max
A/µs
mWs
E rec
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance chip to heatsink
1,15
K/W
DC link Capacitor
C value
C
80
100
120
nF
Thermistor
R
Δ R/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
21511
ꢁ
%
R100=1486 ꢁ
ꢀ4,5
+4,5
210
3,5
mW
mW/K
K
B(25/50)
3884
3964
Bꢀvalue
B(25/100)
K
Vincotech NTC Reference
F
copyright Vincotech
5
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
T j
=
=
t p
T j
=
=
250
25
ꢂs
°C
250
125
ꢂs
°C
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
100
450
375
300
225
80
60
40
20
Tj = Tjmax-25°C
150
Tj = Tjmax-25°C
75
Tj = 25°C
Tj = 25°C
0
0
0
0
1
2
3
4
2
4
6
8
10
12
VGE (V)
VF (V)
At
At
t p
=
t p
=
250
10
ꢂs
V
250
ꢂs
V CE
=
copyright Vincotech
6
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eon High T
Eoff High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
0
50
100
150
200
0
4
8
12
16
20
I
C (A)
R
G ( Ω)
With an inductive load at
With an inductive load at
T j
=
T j =
°C
V
°C
V
25/125
350
±15
4
25/125
350
V CE
V GE
=
=
V CE
V GE
=
=
V
±15
V
R gon
R goff
=
=
I C =
ꢁ
ꢁ
100
A
4
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
2,5
2
1,5
1
Erec High T
2
1,5
1
Erec Low T
Erec High T
0,5
0,5
0
Erec Low T
0
0
4
8
12
16
20
0
50
100
150
200
I C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
T j
=
T j =
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
=
=
V CE
V GE
=
=
V
±15
V
R gon
=
I C =
ꢁ
100
A
copyright Vincotech
7
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
0,10
0,01
0,00
1,00
0,10
0,01
0,00
tdoff
tdon
tdoff
tdon
tr
tf
tr
tf
0
50
100
150
200
0
4
8
12
16
20
I
C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
T j
=
T j =
125
350
±15
4
°C
V
125
350
±15
100
°C
V
V CE
V GE
=
=
V CE
V GE
=
=
V
V
R gon
R goff
=
=
I C =
ꢁ
ꢁ
A
4
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,15
0,12
0,09
0,06
0,03
0
0,25
trr High T
trr High T
0,20
0,15
0,10
0,05
trr Low T
trr Low T
0,00
0
4
8
12
16
20
0
50
100
150
200
I C (A)
R gon ( Ω)
At
At
T j
=
T j
=
=
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V R
=
I F
=
V
100
A
=
V GE
=
ꢁ
±15
V
copyright Vincotech
8
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
12
10
8
10
Qrr High T
8
6
4
2
Qrr High T
6
Qrr Low T
4
Qrr Low T
2
0
0
0
4
8
12
16
20
0
50
100
150
200
I C (A)
R gon ( Ω)
At
At
T j
=
T j
=
=
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V R
=
I F
=
V
100
A
=
V GE
=
ꢁ
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
150
120
90
60
30
0
150
IRRM High T
120
90
IRRM Low T
60
IRRM High T
IRRM Low T
30
0
0
0
50
100
150
200
4
8
12
16
20
I C (A)
R gon ( Ω)
At
At
T j
=
T j
=
=
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
=
=
V R
I F
=
V
100
A
R gon
=
V GE
=
ꢁ
±15
V
copyright Vincotech
9
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
6000
5000
4000
3000
2000
1000
0
7500
dIrec/dt T
dIo/dt T
dIrec/dt T
dI0/dt T
6000
4500
3000
1500
0
0
4
8
12
16
20
0
50
100
150
200
I C (A)
R gon ( Ω)
At
T j
At
T j
=
=
=
25/125
350
±15
4
°C
25/125
°C
V CE
V GE
=
=
V R
V
V
ꢁ
350
100
±15
V
A
V
I F
=
R gon
=
V GE
=
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
0,1
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
102
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
10110
At
D =
R thJH
At
t p / T
t p / T
D =
R thJH
=
=
0,37
K/W
1,11
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W)
R (K/W) Tau (s)
R (K/W)
0,06
0,15
0,12
0,03
0,01
2,4E+00
4,0Eꢀ01
1,0Eꢀ01
1,3Eꢀ02
8,4Eꢀ04
0,07
0,25
0,57
0,12
0,06
0,03
6,8E+00
1,2E+00
2,8Eꢀ01
6,0Eꢀ02
1,3Eꢀ02
1,1Eꢀ03
copyright Vincotech
10
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Collector current as a
function of heatsink temperature
I C = f(T h)
500
400
300
200
100
0
200
160
120
80
40
0
o C)
T h (
o C)
0
50
100
150
200
T h
(
0
50
100
150
200
At
At
T j
=
T j
=
175
°C
175
15
°C
V
V GE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
150
125
100
75
100
80
60
40
20
0
50
25
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j
=
T j
=
150
°C
150
°C
copyright Vincotech
11
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 25
IGBT
Figure 26
IGBT
Safe operating area as a function
of collectorꢀemitter voltage
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
103
16
14
12
10
8
100uS
240V
10mS
1mS
100mS
102
960V
DC
101
100
6
4
10-1
2
0
0
100
200
300
400
500
600
700
800
Q g (nC)
100
103
VCE (V)
102
101
At
D =
At
I C
single pulse
=
160
A
T h
V GE
T j
=
80
ºC
=
=
±15
T jmax
V
ºC
copyright Vincotech
12
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
400
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
t p
T j
=
=
t p
T j
=
=
250
25
ꢂs
°C
250
125
ꢂs
°C
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
140
120
100
80
180
150
120
90
60
60
Tj = 25°C
40
Tj = Tjmax-25°C
Tj = Tjmax-25°C
30
20
Tj = 25°C
0
0
0
0
1
2
3
4
VGE (V)
VF (V)
2
4
6
8
10
12
At
At
t p
=
t p
=
250
10
ꢂs
V
250
ꢂs
V CE
=
copyright Vincotech
13
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon High T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
Eon High T
Eon Low T
0
4
8
12
16
20
0
50
100
150
200
R G ( Ω )
I
C (A)
With an inductive load at
With an inductive load at
T j
=
T j =
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
=
=
V CE
V GE
=
=
V
±15
V
R gon
R goff
=
=
I C =
ꢁ
ꢁ
100
A
4
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
5
4
3
2
1
0
4
3
2
1
0
Erec High T
Erec High T
Erec Low T
Erec Low T
0
4
8
12
16
20
0
50
100
150
200
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
T j
=
T j =
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
=
=
V CE
V GE
=
=
V
±15
V
R gon
=
I C =
ꢁ
100
A
copyright Vincotech
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17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdon
tdoff
tdon
0,1
0,1
tr
tf
tf
tr
0,01
0,01
0,001
0,001
0
50
100
150
200
I
C (A)
0
4
8
12
16
R G
(
Ω
)
20
With an inductive load at
With an inductive load at
T j
=
T j =
125
350
±15
4
°C
V
125
350
±15
100
°C
V
V CE
V GE
=
=
V CE
V GE
=
=
V
V
R gon
R goff
=
=
I C =
ꢁ
ꢁ
A
4
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,20
0,15
0,10
0,05
0,00
0,8
trr High T
trr High T
0,6
0,4
0,2
trr Low T
trr Low T
0,0
0
0
50
100
150
200
I C (A)
4
8
12
16
R gon ( Ω)
20
At
At
T j
=
T j
=
=
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
=
=
V R
I F
=
V
100
A
R gon
=
V GE
=
ꢁ
±15
V
copyright Vincotech
15
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
20
15
10
5
20
Qrr High T
15
10
5
Qrr High T
Qrr Low T
Qrr Low T
0
0
0
4
8
12
16
20
0
50
100
150
200
I
C (A)
R gon ( Ω)
At
T j
At
T j
=
=
=
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V R
=
I F
=
V
100
A
=
V GE
=
ꢁ
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
150
125
100
75
150
IRRM High T
125
100
75
IRRM Low T
IRRM High T
50
50
IRRM Low T
25
25
0
0
0
0
50
100
150
200
4
8
12
16
20
I C (A)
R gon ( Ω)
At
At
T j
=
T j
=
=
25/125
350
±15
4
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V R
=
I F
=
V
100
A
=
V GE
=
ꢁ
±15
V
copyright Vincotech
16
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
6000
9000
dIrec/dt T
dIrec/dt T
dI0/dt T
di0/dt T
5000
7500
6000
4500
3000
1500
0
4000
3000
2000
1000
0
0
20
40
60
80
100
120
140
160
180
I C (A)
200
0
4
8
12
16
20
R gon ( Ω)
At
T j
At
T j
=
=
=
25/125
350
±15
4
°C
V
25/125
350
°C
V CE
V GE
=
=
V R
V
A
V
I F
=
V
100
R gon
=
V GE
=
ꢁ
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
101
100
100
D = 0,5
D = 0,5
0,2
10-1
10-1
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
1
At
At
t p / T
t p / T
D =
D =
R thJH
=
R thJH =
0,99
K/W
1,15
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
0,08
0,24
0,52
0,09
0,05
0,02
6,3E+00
1,1E+00
2,8Eꢀ01
6,6Eꢀ02
1,3Eꢀ02
1,2Eꢀ03
0,05
0,13
0,59
0,22
0,10
0,07
4,9E+00
8,2Eꢀ01
1,8Eꢀ01
4,7Eꢀ02
7,8Eꢀ03
9,8Eꢀ04
copyright Vincotech
17
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Collector current as a
function of heatsink temperature
I C = f(T h)
200
150
100
50
120
100
80
60
40
20
0
0
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
T h
(
At
At
T j
=
T j
=
175
ºC
175
15
ºC
V
V GE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
150
125
100
75
75
60
45
30
15
0
50
25
0
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
Th
(
At
At
T j
=
T j
=
150
ºC
150
ºC
copyright Vincotech
18
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
NP IGBT Inverse Diode
Figure 25
NP IGBT Inverse Diode
Figure 26
NP IGBT Inverse Diode
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Diode transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
100
10-1
10-2
60
50
40
30
20
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
Tj = Tjmax-25°C
Tj = 25°C
0
0
1
2
3
4
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
1
At
At
t p / T
t p
=
250
ꢂs
D =
R thJH
=
3,43
K/W
Figure 27
Power dissipation as a
NP IGBT Inverse Diode
Figure 28
Forward current as a
NP IGBT Inverse Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
60
50
40
30
20
10
0
25
20
15
10
5
0
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
Th
(
At
At
T j
=
T j
=
175
ºC
175
ºC
copyright Vincotech
19
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge Inverse Diode
Figure 1
Half Bridge Inverse Diode
Figure 2
Half Bridge Inverse Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
100
10-1
10-2
25
20
15
D = 0,5
0,2
10
Tj = Tjmax-25°C
0,1
Tj = 25°C
0,05
0,02
0,01
0,005
0.000
5
0
0
0,5
1
1,5
2
2,5
3
3,5
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p
=
250
ꢂs
D =
R thJH
=
2,24
K/W
Figure 3
Power dissipation as a
Half Bridge Inverse Diode
Figure 4
Forward current as a
Half Bridge Inverse Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
80
60
40
20
0
25
20
15
10
5
0
o C)
0
50
100
150
T h
(
o C)
200
0
50
100
150
200
T h
(
At
At
T j
=
T j
=
150
ºC
150
ºC
copyright Vincotech
20
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
50
75
100
T (°C)
125
copyright Vincotech
21
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Switching Definitions Half Bridge
General conditions
T j
=
=
=
125 °C
4 ꢁ
4 ꢁ
R gon
R goff
Figure 1
Half Bridge IGBT
Figure 2
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
250
%
%
tdoff
IC
100
200
150
100
VGE 90%
IC
75
50
25
0
VGE
VCE 90%
VCE
VGE
tEoff
tdon
VCE
50
IC 1%
VCE 3%
IC 10%
VGE 10%
0
tEon
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
2,9
3
3,1
3,2
3,3
time (us)
time(us)
V GE (0%) =
ꢀ15
V
V GE (0%) =
ꢀ15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
700
100
0,27
0,64
V
700
100
0,13
0,28
V
A
A
t doff
=
=
ꢂs
ꢂs
t don
=
=
ꢂs
ꢂs
t E off
t E on
Figure 3
Half Bridge IGBT
Figure 4
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
125
250
fitted
%
%
IC
IC
100
200
150
IC 90%
75
VCE
IC 60%
100
50
IC 90%
IC 40%
tr
VCE
50
25
IC10%
IC 10%
0
0
tf
-50
-25
3,1
3,15
3,2
3,25
3,3
0,15
0,2
0,25
0,3
0,35
0,4
time (us)
time(us)
V C (100%) =
I C (100%) =
700
100
0,06
V
V C (100%) =
I C (100%) =
700
100
0,03
V
A
A
t f
=
ꢂs
t r
=
ꢂs
copyright Vincotech
22
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Switching Definitions Half Bridge
Figure 5
Half Bridge IGBT
Figure 6
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
125
125
%
IC 1%
%
Eon
Eoff
100
100
75
75
50
25
0
50
Poff
Pon
25
VGE 90%
VCE 3%
VGE 10%
0
tEoff
tEon
-25
-25
2,9
3
3,1
3,2
3,3
3,4
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
P off (100%) =
E off (100%) =
70,11
kW
P on (100%) =
E on (100%) =
70,11
kW
mJ
ꢂs
4,19
0,64
mJ
ꢂs
2,60
0,28
t E off
=
t E on =
Figure 7
NP FWD
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
-50
IRRM 10%
-100
-150
IRRM 90%
IRRM 100%
3,1
3,15
3,2
3,25
3,3
3,35
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
700
V
100
A
ꢀ113
0,11
A
t rr
=
ꢂs
copyright Vincotech
23
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Switching Definitions Half Bridge
Figure 8
NP FWD
Figure 9
NP FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
%
125
%
Qrr
Id
Erec
100
100
tQrr
tErec
50
75
50
25
0
0
-50
Prec
-100
-150
-25
3,1
3,2
3,3
3,4
3,5
3,1
3,2
3,3
3,4
3,5
time(us)
time(us)
I d (100%) =
Q rr (100%) =
100
A
P rec (100%) =
E rec (100%) =
70,11
1,38
0,22
kW
mJ
ꢂs
7,16
0,22
ꢂC
ꢂs
t Q rr
=
t E rec =
Measurement circuits
Figure 10
BUCK stage switching measurement circuit
copyright Vincotech
24
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Ordering Code and Marking ꢀ Outline ꢀ Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as in packaging barcode as
without thermal paste with solder pins
without thermal paste with pressfit pins
10ꢀFY12NMA160SH01ꢀM820F18
10ꢀPY12NMA160SH01ꢀM820F18Y
M820F
M820FY
M820ꢀF
M820ꢀFY
Outline
Pinout
copyright Vincotech
25
17 Apr. 2015 / Revision 2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured
characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further
notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising
out of the application or use of any product or circuit described herein; neither does it convey any license under its
patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the
express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labelling can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
26
17 Apr. 2015 / Revision 2
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