10-FY12NMA160SH09-M820F98 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-FY12NMA160SH09-M820F98 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总32页 (文件大小：9066K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY12NMA160SH09-M820F98
datasheet
flowMNPC 1
1200 V / 160 A
Features
flow 1 12 mm housing
● High reactive power capability
● Low inductance layout
● Split output
● Enhanced LVRT capability
Schematic
Target applications
● Solar Inverters
Types
● 10-FY12NMA160SH09-M820F98
Copyright Vincotech
1
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
137
480
302
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
650
82
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
640
105
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
1200
19
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
46
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
650
93
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 25 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
640
132
±30
2
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
50
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
340
580
104
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
21
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
40
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 125
°C
Copyright Vincotech
3
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
7.48
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
4
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,006
160
25
5,3
5,8
6,3
V
V
25
1,78
1,94
2,23
2,32
2,42(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
20
µA
nA
Ω
20
480
None
9320
600
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
520
VCC = 960 V
15
160
740
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,31
K/W
25
136
139
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
138
32
tr
125
150
25
34
36
Rgon = 4 Ω
Rgoff = 4 Ω
211
td(off)
Turn-off delay time
Fall time
125
150
25
250
ns
260
±15
350
160
40,78
60,42
67,19
3,85
4,58
5,32
4,06
5,76
6,39
tf
125
150
25
ns
QrFWD=4,77 µC
QrFWD=7,65 µC
QrFWD=8,72 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,55
1,62
1,61
1,9(1)
VF
IR
Forward voltage
160
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,91
K/W
25
117,08
126,42
129,78
72,65
134,9
151,31
4,77
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=5150 A/µs
di/dt=4397 A/µs
di/dt=4035 A/µs
Qr
Recovered charge
±15
350
160
125
150
25
7,65
μC
8,72
0,86
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
1,45
mWs
A/µs
1,68
4481
3055
2711
(dirf/dt)max
125
150
Copyright Vincotech
6
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Sw. Protection Diode
Static
25
1,35
1,79
1,77
1,73
2,05(1)
VF
IR
Forward voltage
10
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
2,7
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,07
K/W
Copyright Vincotech
7
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
5
0,1142
160
25
5
6
7
V
V
25
1,64
1,69
1,75
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
20
µA
nA
Ω
30
400
None
9620
368
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
158
15
400
160
342
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,72
K/W
25
147
146
146
27
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
29
29
Rgon = 8 Ω
Rgoff = 8 Ω
124
132
134
29,4
40,54
44,97
1,8
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
160
tf
125
150
25
ns
QrFWD=4,56 µC
QrFWD=10,26 µC
QrFWD=11,6 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
2,3
mWs
mWs
2,39
2,33
3,24
3,44
Eoff
125
150
Copyright Vincotech
8
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,28
2,41
2,37
2,62(1)
VF
IR
Forward voltage
70
125
150
25
V
2,62(1)
120
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
5400
11000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,92
K/W
25
134,46
151,57
159,08
54,76
92,75
153,6
4,56
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=6393 A/µs
di/dt=5363 A/µs
Qr
Recovered charge
±15
350
160
125
150
25
10,26
11,6
μC
0,898
2,55
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
2,89
7853
5712
5545
(dirf/dt)max
125
150
Copyright Vincotech
9
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,23
1,79
1,67
1,87(1)
0,18
VF
IR
Forward voltage
15
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,36
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
100
nF
%
Tolerance
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
125
10
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
12
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,314
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,90E-02
7,71E-02
1,55E-01
1,55E-02
7,89E-03
2,20E+00
3,38E-01
9,10E-02
5,12E-03
5,92E-04
Copyright Vincotech
11
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,908
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,44E-01
2,39E-01
3,84E-01
9,23E-02
4,87E-02
3,21E+00
4,06E-01
8,31E-02
1,18E-02
8,28E-04
Copyright Vincotech
13
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
2,066
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,09E-02
1,55E-01
7,75E-01
5,33E-01
3,54E-01
1,97E-01
4,26E+00
5,03E-01
7,89E-02
2,68E-02
5,03E-03
9,09E-04
Copyright Vincotech
14
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
=
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,718
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,06E-01
1,53E-01
3,11E-01
9,72E-02
3,40E-02
1,64E-02
2,45E+00
6,14E-01
1,37E-01
3,49E-02
6,36E-03
6,05E-04
Copyright Vincotech
15
13 May. 2021 / Revision 4
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datasheet
Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
16
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,917
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,15E-01
3,98E-01
2,68E-01
7,83E-02
5,82E-02
1,01E+00
1,45E-01
5,21E-02
6,35E-03
9,74E-04
Copyright Vincotech
17
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Boost Sw. Protection Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
35
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,358
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
9,10E-02
2,66E-01
8,25E-01
5,40E-01
4,23E-01
2,13E-01
3,90E+00
3,08E-01
6,57E-02
1,54E-02
3,41E-03
5,87E-04
Copyright Vincotech
18
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
19
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
5,0
5,0
Eoff
2,5
2,5
0,0
0,0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
4
figure 22.
FWD
figure 23.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
-1
10
-1
10
tr
tf
tf
tr
-2
10
-2
10
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
4
°C
150
350
±15
160
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
4
figure 26.
FWD
figure 27.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
15,0
12,5
10,0
7,5
12
10
8
Qr
Qr
Qr
Qr
6
Qr
Qr
5,0
4
2,5
2
0,0
0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 30.
FWD
figure 31.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
22
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Buck Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
9000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
50
100
150
200
250
300
350
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
150 °C
350
±15
160
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
Copyright Vincotech
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13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Boost Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eon
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
24
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Boost Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
-1
10
tf
tr
tr
tf
-2
10
-2
10
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
150
350
±15
160
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
8
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
25
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Boost Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
17,5
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
200
175
150
125
100
75
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
50
25
0
0
0,0
0
50
100
150
200
250
300
350
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
125 °C
150 °C
350
±15
160
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
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13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Boost Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
9000
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
50
100
150
200
250
300
350
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
125 °C
150 °C
350
±15
160
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
27
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Switching Definitions
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
28
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Switching Definitions
figure 54.
FWD
figure 55.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
29
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-FY12NMA160SH09-M820F98
10-FY12NMA160SH09-M820F98-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G12
34,8
34,8
32,3
29,8
27,3
24,8
15,45
15,45
0
2,95
0
2
S12
3
0
DC-
4
0
DC-
5
0
DC-
6
0
DC-
7
2,95
0
GND2
GND2
G13
8
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
2,95
8,45
11,45
26,05
29
S13
0
Therm2
Therm1
S14
0
0
0
G14
18,7
18,7
28,1
30,6
33,1
35,6
40,1
40,1
50,3
53
26,05
29
GND1
GND1
DC+
DC+
DC+
DC+
G11
29
29
29
29
18,9
15,95
16,3
16,55
13,8
13,55
9,2
9,2
6,2
6,2
S11
Ph1
Ph1
50,3
53
Ph1
Ph1
50,5
53
Ph2
Ph2
50,5
53
Ph2
Ph2
Copyright Vincotech
30
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Pinout
DC+
17-20
T11
D41
C20
D13
G11
21
S11
22
D44
T14
D11
Ph1
GND1
15-16
23-26
S13 G13
9
10
14
13
G14 S14
T13
Ph2
GND2
7-8
27-30
D12
D43
T12
C10
D42
D14
G12
1
S12
2
Rt
DC-
3-6
12
Therm1
11
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
D41, D42
T13, T14
D13, D14
D43, D44
C10, C20
Rt
IGBT
FWD
1200 V
650 V
1200 V
650 V
1200 V
650 V
630 V
160 A
160 A
10 A
Buck Switch
Buck Diode
FWD
Buck Sw. Protection Diode
Boost Switch
IGBT
160 A
70 A
FWD
Boost Diode
FWD
15 A
Boost Sw. Protection Diode
Capacitor (DC)
Capacitor
NTC
Thermistor
Copyright Vincotech
31
13 May. 2021 / Revision 4
10-FY12NMA160SH09-M820F98
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Datasheet format update:
Generalized format to Type-specific format
NTC change
10-FY12NMA160SH09-M820F98-D3-14
10-FY12NMA160SH09-M820F98-D4-14
19 Jun. 2020
13 May. 2021
Buck switching conditions corrected to Vce=350V
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
13 May. 2021 / Revision 4
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