10-FZ06NIA030SA-P924F33 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
10-FZ06NIA030SA-P924F33
型号: 10-FZ06NIA030SA-P924F33
厂家: VINCOTECH    VINCOTECH
描述:

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

文件: 总29页 (文件大小:8533K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
10-FZ06NIA030SA-P924F33  
datasheet  
flowNPC 0 IGBT  
1200 V / 30 A  
Topology features  
flow 0 12 mm housing  
● Kelvin Emitter for improved switching performance  
● Neutral Point Clamped Topology (I-Type)  
● Temperature sensor  
Component features  
● Easy paralleling  
● Low turn-off losses  
● Low collector emitter saturation voltage  
● Positive temperature coefficient  
● Short tail current  
Schematic  
Housing features  
● Base isolation: Al2O3  
● Clip-in, reliable mechanical connection, qualified for wave  
soldering  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Solder pin  
Target applications  
● UPS  
● Solar Inverters  
Types  
● 10-FZ06NIA030SA-P924F33  
Copyright Vincotech  
1
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Buck Switch  
VCES  
Collector-emitter voltage  
600  
33  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
90  
A
Ptot  
64  
W
V
VGES  
Gate-emitter voltage  
±20  
6
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 360 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Buck Diode  
VRRM  
Peak repetitive reverse voltage  
600  
33  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
Ptot  
52  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Switch  
VCES  
Collector-emitter voltage  
600  
33  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
90  
A
Ptot  
64  
W
V
VGES  
Gate-emitter voltage  
±20  
6
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 360 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
2
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
600  
33  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
Ptot  
52  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Boost Sw. Inv. Diode  
VRRM  
Peak repetitive reverse voltage  
600  
33  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
60  
A
Ptot  
52  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
tp = 1 min  
V
min. 12,7  
9,15  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 200  
Copyright Vincotech  
3
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,00043 25  
5
5,8  
6,5  
V
V
25  
30  
1,1  
1,57  
1,8  
1,9(1)  
15  
0
150  
600  
0
25  
25  
1,6  
µA  
nA  
Ω
20  
300  
None  
1630  
108  
50  
Cies  
pF  
pF  
pF  
Coes  
Cres  
Output capacitance  
f = 1 Mhz  
0
25  
25  
Reverse transfer capacitance  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,49  
K/W  
25  
98,4  
101,4  
11,4  
td(on)  
Turn-on delay time  
Rise time  
ns  
ns  
125  
25  
tr  
125  
25  
16,4  
Rgon = 16 Ω  
Rgoff = 16 Ω  
155,4  
173,6  
93,1  
td(off)  
Turn-off delay time  
Fall time  
ns  
125  
25  
±15  
350  
30  
tf  
ns  
125  
25  
107,02  
0,474  
0,618  
0,802  
1,01  
QrFWD=1,41 µC  
QrFWD=2,29 µC  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
mWs  
125  
25  
125  
Copyright Vincotech  
4
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Diode  
Static  
25  
1,25  
1,64  
1,55  
1,95(1)  
27  
VF  
IR  
Forward voltage  
Reverse leakage current  
30  
V
150  
Vr = 600 V  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,81  
K/W  
25  
35,98  
39,02  
126,45  
183,17  
1,41  
IRM  
Peak recovery current  
Reverse recovery time  
Recovered charge  
A
125  
25  
trr  
ns  
125  
25  
di/dt=3840 A/µs  
di/dt=2458 A/µs  
Qr  
±15  
350  
30  
μC  
125  
25  
2,29  
0,327  
0,554  
4073  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
125  
25  
(dirf/dt)max  
125  
2293  
Copyright Vincotech  
5
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,00043 25  
5
5,8  
6,5  
V
V
25  
30  
1,1  
1,57  
1,8  
1,9(1)  
15  
0
150  
600  
0
25  
25  
1,6  
µA  
nA  
Ω
20  
300  
None  
1630  
108  
50  
Cies  
pF  
pF  
pF  
Coes  
Cres  
Output capacitance  
f = 1 Mhz  
0
25  
25  
Reverse transfer capacitance  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,49  
K/W  
25  
101,6  
102,4  
15,4  
td(on)  
Turn-on delay time  
Rise time  
ns  
ns  
125  
25  
tr  
125  
25  
17,8  
Rgon = 16 Ω  
Rgoff = 16 Ω  
158,2  
177,2  
87,95  
105,11  
0,452  
0,594  
0,809  
1,04  
td(off)  
Turn-off delay time  
Fall time  
ns  
125  
25  
±15  
350  
30  
tf  
ns  
125  
25  
QrFWD=1,36 µC  
QrFWD=2,52 µC  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
mWs  
125  
25  
125  
Copyright Vincotech  
6
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
1,25  
1,64  
1,55  
1,95(1)  
27  
VF  
IR  
Forward voltage  
30  
V
150  
Reverse leakage current  
Vr = 600 V  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,81  
K/W  
25  
27,63  
30,48  
138,03  
264,77  
1,36  
IRM  
Peak recovery current  
Reverse recovery time  
Recovered charge  
A
125  
25  
trr  
ns  
125  
25  
di/dt=2467 A/µs  
di/dt=1930 A/µs  
Qr  
±15  
350  
30  
μC  
125  
25  
2,52  
0,336  
0,667  
1297  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
125  
25  
(dirf/dt)max  
125  
449,65  
Boost Sw. Inv. Diode  
Static  
25  
1,25  
1,64  
1,55  
1,95(1)  
27  
VF  
IR  
Forward voltage  
30  
V
150  
Reverse leakage current  
Vr = 600 V  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,81  
K/W  
Copyright Vincotech  
7
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1486 Ω  
100  
-12  
14  
200  
2
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±3 %  
Tol. ±3 %  
3950  
3998  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
B
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
8
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
80  
80  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
60  
40  
20  
60  
40  
20  
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
Tj:  
VGE  
Tj =  
150 °C  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
30  
10  
25  
20  
15  
10  
5
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
12  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,49  
25 °C  
Tj:  
150 °C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
7,25E-02  
1,02E-01  
6,96E-01  
3,56E-01  
1,42E-01  
4,77E-02  
7,51E-02  
2,15E+00  
4,82E-01  
9,49E-02  
3,40E-02  
5,95E-03  
1,04E-03  
2,72E-04  
Copyright Vincotech  
9
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Buck Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
100  
10µs  
10  
1
100µs  
1ms  
10ms  
100ms  
DC  
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
10  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Buck Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,811  
25 °C  
Tj:  
150 °C  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,35E-02  
2,01E-01  
7,60E-01  
4,22E-01  
2,13E-01  
1,40E-01  
4,59E+00  
4,81E-01  
9,25E-02  
1,80E-02  
3,31E-03  
3,46E-04  
Copyright Vincotech  
11  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
80  
80  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
60  
40  
20  
60  
40  
20  
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)  
VCE(V)  
tp  
VGE  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
Tj:  
Tj =  
150 °C  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
30  
10  
25  
20  
15  
10  
5
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
12  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,49  
25 °C  
Tj:  
150 °C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
7,25E-02  
1,02E-01  
6,96E-01  
3,56E-01  
1,42E-01  
4,77E-02  
7,51E-02  
2,15E+00  
4,82E-01  
9,49E-02  
3,40E-02  
5,95E-03  
1,04E-03  
2,72E-04  
Copyright Vincotech  
12  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Switch Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
100  
10µs  
10  
1
100µs  
1ms  
10ms  
100ms  
DC  
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
13  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Diode Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,811  
25 °C  
Tj:  
150 °C  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,35E-02  
2,01E-01  
7,60E-01  
4,22E-01  
2,13E-01  
1,40E-01  
4,59E+00  
4,81E-01  
9,25E-02  
1,80E-02  
3,31E-03  
3,46E-04  
Copyright Vincotech  
14  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Sw. Inv. Diode Characteristics  
figure 15.  
FWD  
figure 16.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,811  
25 °C  
Tj:  
150 °C  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
8,35E-02  
2,01E-01  
7,60E-01  
4,22E-01  
2,13E-01  
1,40E-01  
4,59E+00  
4,81E-01  
9,25E-02  
1,80E-02  
3,31E-03  
3,46E-04  
Copyright Vincotech  
15  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Thermistor Characteristics  
figure 17.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
16  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Buck Switching Characteristics  
figure 18.  
IGBT  
figure 19.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
2,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eon  
Eoff  
Eon  
Eon  
Eoff  
Eon  
Eoff  
Eoff  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
Ω
125 °C  
350  
±15  
30  
V
V
A
125 °C  
Rgon  
Rgoff  
16  
figure 20.  
FWD  
figure 21.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,9  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
125 °C  
V
A
Copyright Vincotech  
17  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Buck Switching Characteristics  
figure 22.  
IGBT  
figure 23.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(on)  
td(off)  
td(on)  
tf  
tf  
-1  
10  
-1  
10  
tr  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
125  
350  
±15  
16  
°C  
V
125  
350  
±15  
30  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
16  
figure 24.  
FWD  
figure 25.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
V
A
125 °C  
Copyright Vincotech  
18  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Buck Switching Characteristics  
figure 26.  
FWD  
figure 27.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
125 °C  
V
A
figure 28.  
FWD  
figure 29.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
IRM  
IRM  
IRM  
IRM  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
V
A
125 °C  
Copyright Vincotech  
19  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Buck Switching Characteristics  
figure 30.  
FWD  
figure 31.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
6000  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
5000  
4000  
3000  
2000  
1000  
0
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
V
A
125 °C  
figure 32.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
70  
IC MAX  
60  
50  
40  
30  
20  
10  
0
0
100  
200  
300  
400  
500  
600  
700  
V
CE(V)  
Tj =  
At  
125  
16  
°C  
Ω
Rgon  
Rgoff  
=
=
16  
Ω
Copyright Vincotech  
20  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Switching Characteristics  
figure 33.  
IGBT  
figure 34.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
2,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Eoff  
Eon  
Eon  
Eoff  
Eon  
Eoff  
Eoff  
Eon  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
Ω
125 °C  
350  
±15  
30  
V
V
A
125 °C  
Rgon  
Rgoff  
16  
figure 35.  
FWD  
figure 36.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
125 °C  
V
A
Copyright Vincotech  
21  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Switching Characteristics  
figure 37.  
IGBT  
figure 38.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(on)  
td(off)  
td(on)  
tf  
tf  
-1  
10  
-1  
10  
tr  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
125  
350  
±15  
16  
°C  
V
125  
350  
±15  
30  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
Ω
Ω
16  
figure 39.  
FWD  
figure 40.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,45  
0,40  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
V
A
125 °C  
Copyright Vincotech  
22  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Switching Characteristics  
figure 41.  
FWD  
figure 42.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
4,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
125 °C  
V
A
figure 43.  
FWD  
figure 44.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
IRM  
IRM  
IRM  
IRM  
0
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
125 °C  
V
A
Copyright Vincotech  
23  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Boost Switching Characteristics  
figure 45.  
FWD  
figure 46.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
3500  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
3000  
2500  
2000  
1500  
1000  
500  
0
0
10  
20  
30  
40  
50  
60  
IC(A)  
0
10  
20  
30  
40  
50  
60  
70  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
350  
±15  
16  
V
V
Ω
125 °C  
350  
±15  
30  
V
V
A
125 °C  
figure 47.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
70  
IC MAX  
60  
50  
40  
30  
20  
10  
0
0
100  
200  
300  
400  
500  
600  
700  
V
CE(V)  
Tj =  
At  
125  
16  
°C  
Ω
Rgon  
Rgoff  
=
=
16  
Ω
Copyright Vincotech  
24  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Switching Definitions  
figure 48.  
IGBT  
figure 49.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 50.  
IGBT  
figure 51.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
25  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Switching Definitions  
figure 52.  
FWD  
figure 53.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
26  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-FZ06NIA030SA-P924F33  
10-FZ06NIA030SA-P924F33-/7/  
10-FZ06NIA030SA-P924F33-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
G2  
33,6  
30,8  
22  
0
2
0
S2  
3
0
-DC  
-DC  
GND  
S4  
4
19,2  
10,1  
2,8  
0
0
5
0
6
0
7
0
G4  
8
0
7,1  
9,9  
12,7  
15,5  
22,6  
22,6  
22,6  
22,6  
22,6  
22,6  
22,6  
14,8  
8,2  
Line  
Line  
Line  
Line  
G3  
9
0
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
0
0
0
2,8  
10,1  
19,2  
22  
S3  
GND  
+DC  
+DC  
S1  
30,8  
33,6  
33,6  
33,6  
G1  
NTC1  
NTC2  
not assembled  
not assembled  
Copyright Vincotech  
27  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Pinout  
DC+  
15,16  
T1  
D1  
G1  
18  
S1  
17  
T3  
T4  
D3  
D5  
D6  
G3  
12  
S3  
13  
GND  
5,14  
Line  
8,9,10,11  
D4  
G4  
7
S4  
6
T2  
NTC  
D2  
G2  
1
S2  
2
NTC1  
19  
NTC2  
20  
DC-  
3,4  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T1, T2  
D5, D6  
T3, T4  
D2, D1  
D4, D3  
NTC  
IGBT  
FWD  
600 V  
600 V  
600 V  
600 V  
600 V  
30 A  
30 A  
30 A  
30 A  
30 A  
Buck Switch  
Buck Diode  
IGBT  
Boost Switch  
Boost Diode  
FWD  
FWD  
Boost Sw. Inv. Diode  
Thermistor  
Thermistor  
Copyright Vincotech  
28  
08 Jun. 2022 / Revision 3  
10-FZ06NIA030SA-P924F33  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 0  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-FZ06NIA030SA-P924F33-D3-14  
8 Jun. 2022  
New Datasheet format, module is unchanged  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
29  
08 Jun. 2022 / Revision 3  

相关型号:

SI9130DB

5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY