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10-FZ074PA075SM-L625F08 [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-FZ074PA075SM-L625F08
型号： 10-FZ074PA075SM-L625F08
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件： 总17页 (文件大小：1453K)
中文：  中文翻译
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10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
650 V / 75 A  
fastPACK 0 H C  
Features  
flow 0 housing  
● High speed H-Bridge  
● High efficiency IGBT H5  
● Full current fast FWD  
● Integrated capacitors  
● Thermistor  
Schematic  
Target applications  
● Power Supply  
● Solar Inverters  
● UPS  
● Welding & Cutting  
Types  
● 10-FZ074PA075SM-L625F08  
● 10-PZ074PA075SM-L625F08Y  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
H-Bridge Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
54  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
225  
90  
A
W
V
±20  
175  
Maximum Junction Temperature  
°C  
Copyright Vincotech  
1
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
H-Bridge Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
650  
55  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj limited by Tjmax  
Tj = Tjmax  
150  
71  
A
W
°C  
Tjmax  
Maximum Junction Temperature  
175  
Capacitor (DC)  
VMAX  
Top  
Maximum DC voltage  
630  
V
Operation Temperature  
-55…+125  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
tp = 1 min  
V
Creepage distance  
min. 12,7  
9,55 / 9,15  
> 200  
mm  
mm  
Clearance  
with solder pins / with press-fit pins  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
2
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
H-Bridge Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,00075 25  
25  
3,3  
4
4,7  
V
V
1,67  
1,84  
1,89  
2,22  
Collector-emitter saturation voltage  
VCEsat  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
40  
µA  
nA  
Ω
20  
120  
none  
4300  
75  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 MHz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
16  
15  
520  
75  
166  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,06  
K/W  
Dynamic  
25  
49  
49  
49  
td(on)  
125  
150  
25  
Turn-on delay time  
10  
tr  
Rise time  
125  
150  
25  
12  
13  
67  
Rgoff = 2 Ω  
Rgon = 2 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
79  
82  
5
7
±15  
350  
75  
tf  
9
0,644  
0,982  
1,08  
0,269  
0,524  
0,596  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 2,5 μC  
= 4,5 μC  
= 5,2 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
3
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
H-Bridge Diode  
Static  
25  
1,53  
1,49  
1,47  
1,92  
3,8  
VF  
Ir  
Forward voltage  
75  
125  
150  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,34  
K/W  
Dynamic  
25  
90  
111  
117  
IRRM  
125  
150  
25  
Peak recovery current  
A
51  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
83  
93  
ns  
di/dt = 7979 A/μs  
di/dt = 6480 A/μs ±15  
di/dt = 6720 A/μs  
2,53  
4,54  
5,21  
0,578  
1,07  
1,24  
3574  
2005  
2114  
350  
75  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Capacitor (DC)  
C
Capacitance  
150  
nF  
%
%
Tolerance  
-10  
+10  
2,5  
Dissipation factor  
f = 1 kHz  
25  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1484 Ω  
-5  
5
5
mW  
mW/K  
K
1,5  
B(25/50) Tol. ±1 %  
B(25/100) Tol. ±1 %  
3962  
4000  
B-value  
K
Vincotech NTC Reference  
I
Copyright Vincotech  
4
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
H-Bridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
VGE from  
8 V to 17 V in steps of 1 V  
figure 3.  
Typical transfer characteristics  
IGBT  
figure 4.  
IGBT  
Transient Thermal Impedance as function of Pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,06  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
1,05E-01  
2,95E-01  
4,07E-01  
1,50E-01  
3,75E-02  
6,12E-02  
8,62E-01  
1,39E-01  
4,84E-02  
1,04E-02  
2,37E-03  
2,88E-04  
Copyright Vincotech  
5
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
H-Bridge Switch Characteristics  
figure 5.  
IGBT  
Gate voltage vs Gate charge  
VGE = f(Q G)  
V
V
V
V
At  
I C=  
75  
A
Copyright Vincotech  
6
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
H-Bridge Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
0,2  
10-1  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
D =  
R th(j-s)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
tp / T  
1,34  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
5,84E-02  
1,57E-01  
5,86E-01  
3,27E-01  
1,27E-01  
8,12E-02  
3,64E+00  
5,25E-01  
1,06E-01  
2,57E-02  
4,84E-03  
4,11E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical NTC characteristic as a function of temperature  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
7
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
Eon  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
VCE  
VGE  
=
=
=
=
350  
±15  
2
V
V
Ω
Ω
T
j
:
VCE  
VGE  
I C  
=
=
=
350  
±15  
75  
V
V
A
Tj:  
R gon  
R goff  
2
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I C  
)
Erec = f(R g)  
E
E
E
E
E E  
E E  
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
2
V
V
Ω
:
350  
±15  
75  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
8
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
2
°C  
V
150  
350  
±15  
75  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
350  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
350  
±15  
75  
V
V
A
25 °C  
125 °C  
150 °C  
±15  
2
:
Tj  
VGE  
I C  
=
:
VGE  
R gon  
=
=
Tj  
=
Copyright Vincotech  
9
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
±15  
2
V
V
Ω
25 °C  
125 °C  
150 °C  
350  
±15  
75  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
Tj  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
350  
±15  
2
V
V
Ω
25 °C  
125 °C  
150 °C  
350  
±15  
75  
V
V
A
25 °C  
At  
VCE  
=
At  
VCE =  
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
10  
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,di rr/dt = f(I C  
)
di F/dt,di rr/dt = f(R gon  
)
d
iF  
/
d
t
t
d
iF  
/
d
t
dir r/d  
t
t
t
t
t
t
t
t
dirr  
/dt  
i
i
i
i
i
i
i
i
At  
VCE  
=
350  
±15  
2
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
75  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGE  
=
=
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
175  
°C  
Ω
Tj  
=
=
=
2
2
R gon  
R goff  
Ω
Copyright Vincotech  
11  
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Switching Definitions  
General conditions  
=
=
=
125 °C  
2 Ω  
T j  
Rgon  
R goff  
2 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
IC  
tdoff  
VGE  
IC  
VCE  
VGE  
tEoff  
VCE  
tEon  
-15  
VGE (0%) =  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
76  
V
350  
76  
V
A
A
0,079  
0,127  
μs  
μs  
0,049  
0,131  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
350  
76  
V
A
350  
76  
V
A
VC (100%) =  
I C (100%) =  
VC (100%) =  
I C (100%) =  
0,007  
μs  
0,012  
μs  
t f  
=
tr =  
Copyright Vincotech  
12  
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Poff  
Eoff  
Eon  
tEoff  
tEon  
26,61  
0,52  
0,13  
kW  
mJ  
μs  
26,61  
0,98  
0,13  
kW  
mJ  
μs  
P off (100%) =  
Eoff (100%) =  
P on (100%) =  
Eon (100%) =  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
fitted  
VF  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
350  
V
76  
A
-111  
0,083  
A
μs  
t rr  
=
Copyright Vincotech  
13  
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr  
)
Turn-on Switching Waveforms & definition of tErec (tErec  
=
integrating time for Erec  
)
IF  
Qr  
Erec  
tErec  
Prec  
76  
A
26,61  
1,07  
0,17  
kW  
mJ  
μs  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
4,54  
0,17  
μC  
μs  
t Qr  
=
tErec =  
Copyright Vincotech  
14  
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with solder pins  
without thermal paste 12 mm housing with press-fit pins  
Ordering Code  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
G11  
0
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
17,8  
15,3  
2
2,9  
S11  
DC-1  
DC-1  
DC+  
DC+  
S12  
3
8,3  
4
10,8  
19,6  
22,1  
29,1  
32  
5
6
7
8
G12  
9
33,5  
33,5  
Ph1  
10  
Ph1  
11  
12  
13  
33,5  
33,5  
32  
7,2  
4,7  
0
Ph2  
Ph2  
G14  
14  
15  
16  
17  
18  
19  
20  
21  
22  
29,1  
22,1  
19,6  
10,8  
8,3  
2,9  
0
0
0
S14  
DC+  
0
DC+  
0
DC-2  
DC-2  
S13  
0
0
0
G13  
0
8
Therm1  
Therm2  
0
14,5  
Copyright Vincotech  
15  
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Pinout  
Identification  
ID  
Component  
IGBT  
Voltage  
650 V  
Current  
Function  
Comment  
T11-T14  
D11-D14  
75 A  
75 A  
H-Bridge Switch  
H-Bridge Diode  
Capacitor (DC)  
Thermistor  
FWD  
650 V  
C10, C20  
Rt  
Capacitor  
NTC  
630 V  
Copyright Vincotech  
16  
18 Oct. 2017 / Revision 2  
10-FZ074PA075SM-L625F08  
10-PZ074PA075SM-L625F08Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-xZ074PA075SM-L625F08x-D2-14  
18 Oct. 2017  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
18 Oct. 2017 / Revision 2  

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