10-FZ122PB100SH-M819F28 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-FZ122PB100SH-M819F28 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总28页 (文件大小：9116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ122PB100SH-M819F28
datasheet
flowPHASE 0 + NTC
1200 V / 100 A
Features
flow 0 12 mm housing
● High efficiency fast IGBT4 HS half-bridge
● Full current FWD
● Thermistor
Schematic
Target applications
● Industrial Drives
● Power Supply
● Solar
● UPS
● Welding & Cutting
Types
● 10-FZ122PB100SH-M819F28
Copyright Vincotech
1
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Half-Bridge Switch - Hi side
VCES
Collector-emitter voltage
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
1200
87
V
A
IC
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
300
201
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Half-Bridge Switch - Lo side
VCES
Collector-emitter voltage
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
1200
87
V
A
IC
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
300
201
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Half-Bridge Diode - Hi side
VRRM
Peak repetitive reverse voltage
1200
64
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
550
1513
122
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Copyright Vincotech
2
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Half-Bridge Diode - Lo side
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1200
64
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
550
1513
122
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,12
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
3
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Switch - Hi side
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0038
100
25
5,1
5,8
6,4
V
25
1,78
1,95
2,39
2,42(1)
15
0
V
150
1200
0
25
25
1,3
µA
nA
Ω
20
120
7,5
6150
345
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
800
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,47
K/W
25
129,2
143,2
145,2
27,6
30,4
33,8
214,2
268,6
282
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 1 Ω
Rgoff = 1 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
100
26,36
66,55
76,62
4,85
7,4
tf
125
150
25
ns
QrFWD=6,66 µC
QrFWD=13,25 µC
QrFWD=16,16 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
8,5
4,12
6,2
Eoff
125
150
6,89
Copyright Vincotech
4
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Switch - Lo side
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0038
100
25
5,1
5,8
6,4
V
25
1,78
1,95
2,39
2,42(1)
15
0
V
150
1200
0
25
25
1,3
µA
nA
Ω
20
120
7,5
6150
345
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
800
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,47
K/W
25
129,2
143,2
145,2
27,6
30,4
33,8
214,2
268,6
282
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 1 Ω
Rgoff = 1 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
100
26,36
66,55
76,62
4,85
7,4
tf
125
150
25
ns
QrFWD=6,66 µC
QrFWD=13,25 µC
QrFWD=16,16 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
8,5
4,12
6,2
Eoff
125
150
6,89
Copyright Vincotech
5
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Diode - Hi side
Static
25
2,3
2,52(1)
VF
IR
Forward voltage
100
125
150
25
2,38
2,31
V
2,47(1)
120
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
8800
17700
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,78
K/W
25
100,94
119,83
129,79
157,77
336,7
369,56
6,66
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3967 A/µs
di/dt=3671 A/µs
di/dt=3881 A/µs
Qr
Recovered charge
±15
600
100
125
150
25
13,25
16,16
2,52
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
5,3
mWs
A/µs
6,44
4584
(dirf/dt)max
125
150
3088
2896
Copyright Vincotech
6
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Diode - Lo side
Static
25
2,3
2,52(1)
VF
IR
Forward voltage
100
125
150
25
2,38
2,31
V
2,47(1)
120
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
8800
17700
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,78
K/W
25
100,94
119,83
129,79
157,77
336,7
369,56
6,66
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3967 A/µs
di/dt=3671 A/µs
di/dt=3881 A/µs
Qr
Recovered charge
±15
600
100
125
150
25
13,25
16,16
2,52
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
5,3
mWs
A/µs
6,44
4584
(dirf/dt)max
125
150
3088
2896
Copyright Vincotech
7
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switch - Hi side Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
250
VGE
:
8 V
9 V
250
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
200
150
100
50
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 8 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,473
25 °C
Tj:
VCE
=
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,95E-02
1,91E-01
1,52E-01
2,19E-02
1,89E-02
1,40E+00
1,86E-01
5,52E-02
5,98E-03
6,39E-04
Copyright Vincotech
9
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switch - Hi side Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switch - Lo side Characteristics
figure 6.
IGBT
figure 7.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
250
VGE
:
8 V
9 V
250
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
200
150
100
50
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 8 V to 17 V in steps of 1 V
figure 8.
IGBT
figure 9.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,473
25 °C
Tj:
VCE
=
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,95E-02
1,91E-01
1,52E-01
2,19E-02
1,89E-02
1,40E+00
1,86E-01
5,52E-02
5,98E-03
6,39E-04
Copyright Vincotech
11
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switch - Lo side Characteristics
figure 10.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Diode - Hi side Characteristics
figure 11.
FWD
figure 12.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,779
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,81E-02
1,93E-01
3,99E-01
7,07E-02
3,88E-02
1,59E+00
2,55E-01
7,68E-02
6,98E-03
9,88E-04
Copyright Vincotech
13
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Diode - Lo side Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,779
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,81E-02
1,93E-01
3,99E-01
7,07E-02
3,88E-02
1,59E+00
2,55E-01
7,68E-02
6,98E-03
9,88E-04
Copyright Vincotech
14
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
15
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Hi side
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
5,0
5,0
Eoff
2,5
2,5
0,0
0,0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
1
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
16
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Hi side
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
tf
td(on)
-1
10
-1
10
tf
tr
tr
-2
10
-2
10
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
1
°C
V
150
600
±15
100
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
1
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Hi side
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Hi side
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
6000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
1
1
Ω
Copyright Vincotech
19
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Lo side
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
5,0
5,0
Eoff
2,5
2,5
0,0
0,0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
1
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
20
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Lo side
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
tf
td(on)
-1
10
-1
10
tf
tr
tr
-2
10
-2
10
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
1
°C
V
150
600
±15
100
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
1
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Lo side
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Half-Bridge Switching Characteristics - Lo side
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
6000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
1
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
1
1
Ω
Copyright Vincotech
23
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ122PB100SH-M819F28
10-FZ122PB100SH-M819F28-/7/
10-FZ122PB100SH-M819F28-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC-
DC-
DC-
DC-
DC+
DC+
DC+
DC+
G12
S12
Ph
0
0
0
2
2,3
3
0
4,6
4
0
6,9
5
0
15,6
17,9
20,2
22,5
16,45
16,45
11,5
9,2
6
0
7
0
8
0
9
13,85
16,75
33,5
33,5
33,5
33,5
33,5
33,5
13,85
19,55
19,55
33,5
26,1
10
11
12
13
14
15
16
17
18
19
20
21
Ph
6,9
Ph
4,6
Ph
2,3
Ph
0
Ph
13,55
4,95
7,85
22,5
22,5
Ph
S11
G11
Therm1
Therm2
Copyright Vincotech
26
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Pinout
DC+
5,6,7,8
T12
D11
G12
9
S12
10
Ph
11,12,13,14,15,16,17
T11
D12
G11
19
Rt
S11
18
1,2,3,4
DC-
20
Therm1
21
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11-a
T12-a
D11-a
D12-a
Rt
IGBT
IGBT
FWD
FWD
NTC
1200 V
1200 V
1200 V
1200 V
100 A
100 A
100 A
100 A
Half-Bridge Switch - Lo side
Half-Bridge Switch - Hi side
Half-Bridge Diode - Hi side
Half-Bridge Diode - Lo side
Thermistor
Copyright Vincotech
27
07 Sep. 2021 / Revision 2
10-FZ122PB100SH-M819F28
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Diode static characteristics corrected
New datasheet format, module is unchanged
10-FZ122PB100SH-M819F28-D2-14
7 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
07 Sep. 2021 / Revision 2
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