10-FZ12NMA080SH01-M260F [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-FZ12NMA080SH01-M260F |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总28页 (文件大小：9099K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ12NMA080SH01-M260F
datasheet
flowMNPC 0
1200 V / 80 A
Features
flow 0 12 mm housing
● mixed voltage component topology
● neutral point clamped inverter
● reactive power capability
● low inductance layout
Schematic
Target applications
● solar inverter
● UPS
Types
● 10-FZ12NMA080SH01-M260F
Copyright Vincotech
1
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
76
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
240
186
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
600
51
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
69
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
Collector-emitter voltage
600
65
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
225
101
±20
6
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
53
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
90
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
9,15
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,003
80
25
5,3
5,8
6,3
V
25
1,78
1,99
2,33
2,42(1)
15
0
V
125
1200
0
25
25
10
µA
nA
Ω
20
240
None
4660
300
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
260
VCC = 960 V
15
80
370
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,51
K/W
25
77,6
78,8
13
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
15,4
170,4
220,8
43,2
68,24
0,473
0,972
1,28
2,17
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
350
56
tf
ns
125
25
QrFWD=1,01 µC
QrFWD=2,74 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
2,27
1,68
1,58
2,8(1)
VF
IR
Forward voltage
60
125
150
V
Reverse leakage current
Thermal
Vr = 600 V
25
10
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,38
K/W
25
64,27
83,05
28,7
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
73,13
1,01
di/dt=4710 A/µs
di/dt=4651 A/µs
Qr
±15
350
56
μC
125
25
2,74
0,172
0,521
9597
3522
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0012
75
25
5
5,8
6,5
V
25
1,05
1,44
1,59
1,85(1)
15
0
V
125
600
0
25
25
3,8
µA
nA
Ω
20
600
None
4620
288
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
137
VCC = 480 V
15
75
470
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,94
K/W
25
83,6
84,8
11
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
12,2
177
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
204,6
86,45
105,19
0,528
0,747
1,86
2,5
±15
350
56
tf
ns
125
25
QrFWD=5,32 µC
QrFWD=8,22 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
6
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,35
1,73
1,7
2,05(1)
VF
IR
Forward voltage
50
125
150
V
1,68
Reverse leakage current
Thermal
Vr = 1200 V
25
10
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,06
K/W
25
106,49
117,83
102,06
148,06
5,32
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=6090 A/µs
di/dt=5325 A/µs
Qr
±15
350
56
μC
125
25
8,22
1,55
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
2,42
6904
(dirf/dt)max
125
4951
Copyright Vincotech
7
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1486 Ω
100
-12
14
200
2
mW
mW/K
K
d
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
250
250
VGE
:
7 V
8 V
9 V
200
150
100
50
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
80
10
-1
60
40
20
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,512
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,50E-02
1,84E-01
1,81E-01
3,37E-02
1,79E-02
1,05E+00
1,66E-01
6,37E-02
7,18E-03
6,47E-04
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,379
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,16E-02
2,02E-01
7,09E-01
2,16E-01
9,74E-02
7,28E-02
3,99E+00
6,32E-01
1,11E-01
3,68E-02
5,31E-03
1,31E-03
Copyright Vincotech
11
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
125
μs
°C
25 °C
Tj:
VGE
=
Tj =
V
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
70
10
60
50
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,94
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,42E-02
2,89E-01
4,35E-01
8,50E-02
4,67E-02
4,56E+00
4,19E-01
7,20E-02
2,19E-02
1,33E-03
Copyright Vincotech
12
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Boost Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
50
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,061
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,19E-02
8,50E-02
4,99E-01
2,83E-01
9,28E-02
5,92E-02
4,68E+00
8,80E-01
1,21E-01
4,12E-02
6,53E-03
6,76E-04
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Buck Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eon
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
Ω
125 °C
350
±15
56
V
125 °C
V
A
Rgon
Rgoff
4
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
125 °C
V
A
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Buck Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
-1
10
td(on)
tf
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
4
°C
V
125
350
±15
56
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
V
A
125 °C
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Buck Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
6
5
4
3
2
1
0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
125 °C
V
A
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
120
100
80
60
40
20
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
0
25
50
75
100
125
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
125 °C
V
A
Copyright Vincotech
18
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Buck Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
12000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
25
50
75
100
125
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
V
A
125 °C
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
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11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Boost Switching Characteristics
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eoff
Eoff
Eon
Eoff
Eoff
Eon
Eon
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
Ω
125 °C
350
±15
56
V
125 °C
V
A
Rgon
Rgoff
4
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
125 °C
V
A
Copyright Vincotech
20
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Boost Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
td(off)
-1
10
-1
10
tf
td(on)
tr
tr
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
4
°C
V
125
350
±15
56
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
125 °C
V
A
Copyright Vincotech
21
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Boost Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
15,0
12,5
10,0
7,5
12
10
8
Qr
Qr
6
Qr
Qr
5,0
4
2,5
2
0,0
0
0,0
0
20
40
60
80
100
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
125 °C
V
A
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
20
40
60
80
100
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
125 °C
V
A
Copyright Vincotech
22
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Boost Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
12000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
350
±15
56
V
V
A
125 °C
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
125
4
°C
Rgon
Rgoff
=
=
Ω
Ω
4
Copyright Vincotech
23
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ12NMA080SH01-M260F
10-FZ12NMA080SH01-M260F-/7/
10-FZ12NMA080SH01-M260F-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
S2
33,6
30,8
22
0
2
0
G2
3
0
-DC
-DC
GND
S4
4
19,2
10,1
2,8
0
0
5
0
6
0
7
0
G4
8
0
7,1
9,9
12,7
15,5
22,6
22,6
22,6
22,6
22,6
22,6
22,6
14,8
8,2
Line
Line
Line
Line
G3
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
0
0
0
2,8
10,1
19,2
22
S3
GND
+DC
+DC
G1
30,8
33,6
33,6
33,6
S1
NTC1
NTC2
not assembled
not assembled
Copyright Vincotech
26
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Pinout
+DC
15,16
T1
D1
17
18
G1
S1
12
G3
S3
T3
D4
T4
13
Line
08,09,10,11
GND
05,14
D3
07
G4
S4
T2
02
D2
06
G2
S2
NTC
01
-DC
03,04
NTC2
20
NTC1
19
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T2
D3, D4
T3, T4
D1, D2
NTC
IGBT
FWD
1200 V
600 V
80 A
60 A
75 A
50 A
Buck Switch
Buck Diode
Boost Switch
Boost Diode
Thermistor
IGBT
600 V
FWD
1200 V
Thermistor
Copyright Vincotech
27
11 Sep. 2021 / Revision 11
10-FZ12NMA080SH01-M260F
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Introduce Rth values with PSX-P7 TIM
10-FZ12NMA080SH01-M260F-D11-14
11 Sep. 2021
Separate datasheet for pressfit pin version
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
11 Sep. 2021 / Revision 11
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