10-FZ12PNA010M7-P849C28 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-FZ12PNA010M7-P849C28 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总20页 (文件大小：7006K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ12PNA010M7-P849C28
datasheet
flowPIM 0
1200 V / 10 A
Features
flow 0 12 mm housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Builtin NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-FZ12PNA010M7-P849C28
Copyright Vincotech
1
26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
18
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
55
W
V
VGES
Gate-emitter voltage
±20
9,5
175
tSC
Short circuit ratings
VGE = 0 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
19
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
44
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
33
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
44
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
9,29
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,001
10
25
5,4
6
6,6
V
V
25
1,66
1,9
2,15(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,96
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
0
1200
0
25
25
35
µA
nA
Ω
500
None
2000
86
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
23
VCC = 600 V
15
10
80
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,72
K/W
25
127,8
125,6
123,4
29
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
32,2
33,8
Rgon = 32 Ω
Rgoff = 32 Ω
145,2
179,2
182
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
10
98,1
tf
125
150
25
107,57
116,71
0,883
1,12
ns
QrFWD=1,09 µC
QrFWD=1,66 µC
QrFWD=1,81 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,19
0,656
0,86
Eoff
125
150
0,908
Copyright Vincotech
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10-FZ12PNA010M7-P849C28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,61
1,69
1,7
2,1(1)
VF
IR
Forward voltage
10
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,16
K/W
25
8,67
9,25
IRRM
Peak recovery current
125
150
25
A
9,34
254,4
372,9
409
trr
Reverse recovery time
125
150
25
ns
1,09
di/dt=278 A/µs
di/dt=270 A/µs
di/dt=272 A/µs
Qr
Recovered charge
±15
600
10
125
150
25
1,66
μC
1,81
0,374
0,62
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
0,68
84,75
53,58
49,28
(dirf/dt)max
125
150
Copyright Vincotech
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10-FZ12PNA010M7-P849C28
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,996
0,907
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
0,0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
1,722
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,08E-02
2,21E-01
6,51E-01
3,93E-01
1,95E-01
1,82E-01
2,32E+00
2,45E-01
6,03E-02
1,33E-02
3,15E-03
5,45E-04
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,162
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,29E-02
3,88E-01
7,75E-01
5,89E-01
3,17E-01
2,25E+00
2,05E-01
5,06E-02
8,88E-03
1,48E-03
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Rectifier Diode Characteristics
figure 8.
Rectifier
figure 9.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00 0,25 0,50 0,75 1,00 1,25 1,50 1,75 2,00 2,25
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
1,594
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Thermistor Characteristics
figure 10.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switching Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
Ω
125 °C
150 °C
600
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
32
figure 13.
FWD
figure 14.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switching Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
tr
tf
-1
10
td(off)
td(on)
-1
10
tf
tr
-2
10
-2
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
32
°C
V
150
600
±15
10
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 17.
FWD
figure 18.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switching Characteristics
figure 19.
FWD
figure 20.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 21.
FWD
figure 22.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
10
25
20
15
10
5
IRM
IRM
IRM
8
6
4
IRM
IRM
IRM
2
0
0,0
0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switching Characteristics
figure 23.
FWD
figure 24.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
350
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
300
250
200
150
100
50
0
0,0
0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 25.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switching Definitions
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
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26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Inverter Switching Definitions
figure 30.
FWD
figure 31.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
17
26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ12PNA010M7-P849C28
10-FZ12PNA010M7-P849C28-/7/
10-FZ12PNA010M7-P849C28-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
2,7
0
Function
Therm1
Therm2
DC-Rect
25,5
25,5
22,8
2
3
0
4
not assembled
not assembled
0 G15
5
6
13,5
10,8
8,1
5,4
2,7
0
7
0
DC-3
G13
8
0
9
0
DC-2
G11
10
11
12
13
14
15
16
17
18
19
20
21
22
23
0
0
DC-1
G12
0
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
0
Ph1
7,5
7,5
15
G14
Ph2
G16
15
Ph3
22,8
25,5
DC+Inv
DC+Rect
not assembled
33,5
33,5
33,5
15
7,5
0
ACIn1
ACIn2
ACIn3
Copyright Vincotech
18
26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Pinout
DC+Rect
19
DC+Inv
18
T14
T12
D32
T16
D34
D36
D11
D13
D15
G16
G12
12
G14
14
16
ACIn1
21
Ph1
13
ACIn2
22
Ph2
15
ACIn3
23
Ph3
17
D31
D33
D35
T11
T13
T15
D12
D14
D16
G11
10
G13
8
G15
6
Rt
Therm1
1
Therm2
2
DC-1
11
DC-3
7
DC-Rect
3
DC-2
9
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
10 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
1200 V
1600 V
10 A
25 A
D31, D32, D33, D34,
D35, D36
Rectifier
NTC
Rectifier Diode
Thermistor
Rt
Copyright Vincotech
19
26 Sep. 2021 / Revision 3
10-FZ12PNA010M7-P849C28
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Correct Thermal values of Inverter Diode
10-FZ12PNA010M7-P849C28-D3-14
26 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
26 Sep. 2021 / Revision 3
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