10-P006PPA020SB01-M685B10Y [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-P006PPA020SB01-M685B10Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总33页 (文件大小：13673K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-P006PPA020SB01-M685B10Y
datasheet
flowPIM 0 + PFC
600 V / 20 A
Features
flow 0 17 mm housing
● Clip in PCB mounting
● Trench Fieldstop IGBTs for low saturation losses
● Latest generation superjunction MOSFET with
SiC boost diode for PFC switching frequencies up to 200 kHz
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-P006PPA020SB01-M685B10Y
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
26
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
56
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
32
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
52
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Switch
VDSS
Drain-source voltage
600
24
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
IDM
tp limited by Tjmax
VDD = 50 V
159
1135
1,72
9,3
A
EAS
EAR
IAR
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Total power dissipation
ID = 9,3 A
ID = 9,3 A
PAV = EAR*f
Ts = 25 °C
Ts = 80 °C
mJ
mJ
A
VDD = 50 V
tp limited by Tjmax
VDS= 480 V
Tj = Tjmax
dv/dt
Ptot
50
V/ns
W
90
VGSS
Gate-source voltage
±20
150
V
Tjmax
Maximum Junction Temperature
°C
PFC Diode
VRRM
Peak repetitive reverse voltage
650
29
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
105
75
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
A
Tj = Tjmax
52
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
33
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
44
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
I
DC current
Tc = 70 °C
Tc = 70 °C
22
5
A
Ptot
Top
Power dissipation
W
°C
Operation Temperature
-55 ... 170
Capacitor (PFC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
min. 12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00029 25
5
5,8
6,5
V
25
20
1,1
1,55
1,75
1,9(1)
15
0
V
125
600
0
25
25
1,1
µA
nA
Ω
20
300
None
1100
71
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
32
VCC = 480 V
0/15
20
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,7
K/W
25
65,6
65,2
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
19,8
tr
125
25
21
Rgon = 16 Ω
Rgoff = 16 Ω
141,8
167
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
400
15
76,33
86,36
0,45
tf
ns
125
25
QrFWD=0,883 µC
QrFWD=1,79 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
0,667
0,385
0,523
125
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,65
1,61
1,95(1)
27
VF
IR
Forward voltage
30
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,81
K/W
25
10,06
13,55
173,99
233,08
0,883
1,79
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=731 A/µs
di/dt=708 A/µs
Qr
±15
400
15
μC
125
25
0,236
0,474
36,18
85,35
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Copyright Vincotech
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10-P006PPA020SB01-M685B10Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
25
70
70(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0
25,8
mΩ
V
125
144
0,00172 25
2,4
3
3,6
100
5
20
0
0
25
25
nA
µA
Ω
600
0,85
170
Qg
VDD = 480 V
f = 1 Mhz
10
0
25,8
0
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
3800
215
100
pF
Coss
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,78
K/W
25
19,2
18,88
5,12
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
5,44
Rgon = 8 Ω
Rgoff = 8 Ω
292
td(off)
Turn-off delay time
Fall time
ns
125
25
310,72
28
0/16
400
15
tf
ns
125
25
44,28
0,022
0,028
0,081
0,095
QrFWD=0,092 µC
QrFWD=0,091 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,37
1,55
1,63
4,8
1,55(1)
480
VF
IR
Forward voltage
24
125
150
25
V
Reverse leakage current
Thermal
Vr = 650 V
µA
150
72
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,82
K/W
25
16,34
15,7
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
9,91
trr
ns
125
25
10,09
0,092
0,091
0,068
0,064
4360
4238
di/dt=4560 A/µs
di/dt=4207 A/µs
Qr
0/16
400
15
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,996
0,907
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
PFC Shunt
Static
R
Resistance
10
mΩ
%
Tolerance
-1
1
Temperature coeficient
tc
30
ppm/K
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
100
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Copyright Vincotech
9
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
V
CE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Short circuit withstand time as a function of VGE
IC = f(VGE
)
tsc = f(VGE)
20
13
12
11
10
9
15
10
5
8
7
6
0
0
5
10
2
4
6
8
10
12
11
12
13
14
15
16
V
GE(V)
V
GE(V)
tp
VCE
=
=
VCE
=
250
10
μs
V
At
333
333
V
25 °C
Tj:
Tj ≤
125 °C
°C
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Transient thermal impedance as a function of pulse width
Typical short circuit current as a function of VGE
ISC = f(VGE
)
Zth(j-s) = f(tp)
1
10
350
300
250
200
150
100
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
12
13
14
15
16
17
18
19
20
21
10
10
10
10
tp(s)
V
GE(V)
VCE
=
At
333
333
V
D =
tp / T
1,701
Tj ≤
°C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,97E-02
3,46E-01
8,15E-01
2,54E-01
7,70E-02
1,09E-01
1,34E+00
1,70E-01
5,34E-02
7,74E-03
1,33E-03
2,63E-04
figure 7.
IGBT
figure 8.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
20,0
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
5,0
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
33
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Diode Characteristics
figure 9.
FWD
figure 10.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,811
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,35E-02
2,01E-01
7,60E-01
4,22E-01
2,13E-01
1,40E-01
4,59E+00
4,81E-01
9,25E-02
1,80E-02
3,31E-03
3,46E-04
Copyright Vincotech
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10-P006PPA020SB01-M685B10Y
datasheet
PFC Switch Characteristics
figure 11.
MOSFET
figure 12.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
70
70
60
VGS
:
-4 V
-2 V
0 V
60
50
40
30
20
10
0
50
40
2 V
4 V
30
6 V
8 V
20
10 V
12 V
14 V
16 V
18 V
20 V
10
0
-10
-20
-30
-40
-50
-60
-70
0,0
2,5
5,0
7,5
10,0
12,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
V
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 13.
MOSFET
figure 14.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
30
10
25
20
15
10
5
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,78
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
4,90E-02
1,03E-01
4,25E-01
1,20E-01
4,27E-02
4,10E-02
3,64E+00
5,74E-01
1,04E-01
2,91E-02
6,05E-03
8,69E-04
Copyright Vincotech
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10-P006PPA020SB01-M685B10Y
datasheet
PFC Switch Characteristics
figure 15.
MOSFET
figure 16.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
1000
12
10
8
100
10
6
1
4
0,1
0,01
2
0
1
10
100
1000
10000
0
25
50
A
75
100
125
150
175
200
Qg(μC)
V
DS(V)
D =
ID
=
single pulse
25.8
25
Ts =
Tj =
80
10
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
PFC Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,817
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,99E-02
2,92E-01
1,04E+00
2,55E-01
1,35E-01
2,12E+00
2,34E-01
5,49E-02
4,86E-03
7,23E-04
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Rectifier Diode Characteristics
figure 19.
Rectifier
figure 20.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,594
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Copyright Vincotech
17
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Thermistor Characteristics
figure 21.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
18
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
Ω
125 °C
400
±15
15
V
V
A
125 °C
Rgon
Rgoff
16
figure 24.
FWD
figure 25.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
125 °C
V
A
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switching Characteristics
figure 26.
IGBT
figure 27.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
-1
10
tf
tf
td(on)
tr
tr
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
±15
16
°C
V
125
400
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 28.
FWD
figure 29.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
V
A
125 °C
Copyright Vincotech
20
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
V
A
125 °C
figure 32.
FWD
figure 33.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
15,0
12,5
10,0
7,5
45
40
35
30
25
20
15
10
5
IRM
IRM
5,0
IRM
IRM
2,5
0,0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
125 °C
V
A
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switching Characteristics
figure 34.
FWD
figure 35.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
1200
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
V
A
125 °C
figure 36.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
125
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
PFC Switching Characteristics
figure 37.
MOSFET
figure 38.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,25
0,20
0,15
0,10
0,05
0,00
0,5
0,4
0,3
0,2
0,1
0,0
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
400
0/16
8
V
V
Ω
Ω
125 °C
400
0/16
15
V
125 °C
V
A
Rgon
Rgoff
8
figure 39.
FWD
figure 40.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
400
0/16
8
V
V
Ω
125 °C
400
0/16
15
V
V
A
125 °C
Rgon
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
PFC Switching Characteristics
figure 41.
MOSFET
figure 42.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
1
10
td(off)
td(off)
0
10
-1
10
-1
10
tf
td(on)
td(on)
tf
-2
10
tr
tr
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
0/16
8
°C
V
125
400
0/16
15
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
8
figure 43.
FWD
figure 44.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/16
8
V
V
Ω
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
0/16
15
125 °C
Rgon
Copyright Vincotech
24
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
PFC Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,12
0,10
0,08
0,06
0,04
0,02
0,00
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
V
V
Ω
At
400
0/16
15
V
V
A
25 °C
25 °C
Tj:
Tj:
0/16
8
125 °C
125 °C
Rgon
figure 47.
FWD
figure 48.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
20,0
17,5
15,0
12,5
10,0
7,5
22,5
20,0
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
5,0
5,0
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
V
V
Ω
At
400
0/16
15
V
V
A
25 °C
25 °C
Tj:
Tj:
0/16
8
125 °C
125 °C
Rgon
Copyright Vincotech
25
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
PFC Switching Characteristics
figure 49.
FWD
figure 50.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
ID(A)
Rgoff(Ω)
VDS
=
=
=
VDS
=
=
=
At
400
V
V
Ω
At
400
0/16
15
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
VGS
ID
0/16
8
125 °C
125 °C
Rgon
figure 51.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
60
ID MAX
50
40
30
20
10
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
26
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switching Definitions
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Inverter Switching Definitions
figure 56.
FWD
figure 57.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
28
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
PFC Switching Definitions
figure 52.
MOSFET
figure 53.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 54.
MOSFET
figure 55.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
29
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
PFC Switching Definitions
figure 56.
FWD
figure 57.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 58.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
30
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-P006PPA020SB01-M685B10Y
10-P006PPA020SB01-M685B10Y-/7/
10-P006PPA020SB01-M685B10Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
PFC-
S1
33,5
30,7
28
2
0
3
0
4
25,3
22,6
19,9
17,2
13,5
10,8
8,1
5,4
2,7
0
0
S2
5
0
INV-
G7
6
0
7
0
S7
8
0
G6
9
0
E6
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
G5
0
E5
0
G4
0
E4
0
8,6
11,45
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
22,5
15
NTC1
NTC2
G1
0
0
0
U
6
G2
6
V
12
G3
12
W
17,7
20,5
26,5
33,5
33,5
33,5
+INV
PFC+
PFC IN
DC+
L1
7,5
L2
Copyright Vincotech
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12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Pinout
DC+
25
PFC IN PFC+
24 23
+INV
22
T3
T2
T1
D3
D2
D1
D9
D8
D7
G3
20
G2
18
G1
16
W
C1
L1
26
21
V
19
L2
27
U
17
T7
D11
D10
G7
6
T6
T5
T4
D6
D5
D4
S7
7
G6
8
G5
10
G4
12
NTC
R1
DC-
1
INV- S2
S1 PFC-
E6
9
E5
11
E4
13
NTC1
14
NTC2
15
5
4
3
2
Identification
Component
Voltage
Current
Function
Comment
ID
T6, T3, T5, T2, T4, T1
IGBT
600 V
20 A
Inverter Switch
D3, D6, D2, D5, D1,
FWD
600 V
30 A
Inverter Diode
D4
T7
MOSFET
FWD
600 V
650 V
63 mΩ
24 A
PFC Switch
PFC Diode
D7
D11, D9, D10, D8
Rectifier
Shunt
1600 V
25 A
Rectifier Diode
PFC Shunt
R1
C1
Capacitor
Thermistor
500 V
Capacitor (PFC)
Thermistor
NTC
Copyright Vincotech
32
12 Jan. 2022 / Revision 5
10-P006PPA020SB01-M685B10Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Update PFC (dynamic and Diode static values) according to
PCN 15-2019
10-P006PPA020SB01-M685B10Y-D5-14
12 Jan. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
33
12 Jan. 2022 / Revision 5
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