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10-P1126PA035M701-L827F19Y [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
10-P1126PA035M701-L827F19Y
型号： 10-P1126PA035M701-L827F19Y
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总17页 (文件大小：1576K)
中文：  中文翻译
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10-P1126PA035M701-L827F19Y  
datasheet  
1200 V / 35 A  
flow PACK 1  
Features  
flow 1 17 mm housing  
● IGBT M7 with low V CEsat and improved EMC behavior  
● Compact and low inductive design  
● Built-in NTC  
● Improved Rth (AlN)  
Schematic  
Target applications  
● Industrial Drives  
Types  
● 10-P1126PA035M701-L827F19Y  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
1200  
35  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
70  
A
176  
±20  
175  
W
V
Maximum junction temperature  
°C  
Copyright Vincotech  
1
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
1200  
35  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
70  
A
Tj = Tjmax  
115  
175  
W
°C  
Tjmax  
Maximum junction temperature  
Module Properties  
Thermal Properties  
Storage temperature  
Tstg  
Tjop  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
tp = 1 min  
V
Creepage distance  
min. 12,7  
min. 12,7  
> 200  
mm  
mm  
Clearance  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
2
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0035 25  
25  
5,4  
6
6,6  
V
V
1,48  
1,64  
1,68  
1,85  
Collector-emitter saturation voltage  
VCEsat  
15  
35  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
80  
µA  
nA  
Ω
20  
500  
none  
7900  
270  
97  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
#VALUE!  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
600  
35  
260  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,54  
K/W  
25  
124  
122  
121  
14  
td(on)  
125  
150  
25  
Turn-on delay time  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
17  
18  
Rgoff = 8 Ω  
Rgon = 8 Ω  
ns  
179  
203  
208  
95  
118  
119  
1,45  
1,92  
2,09  
2,40  
3,17  
3,42  
td(off)  
Turn-off delay time  
Fall time  
±15  
600  
35  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 4,3 μC  
= 6,2 μC  
= 6,9 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
3
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
1,66  
1,76  
1,75  
2,1  
40  
VF  
IR  
125  
150  
Forward voltage  
35  
V
Reverse leakage current  
1200  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,82  
K/W  
Dynamic  
25  
77  
IRRM  
125  
150  
25  
76  
77  
157  
Peak recovery current  
A
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
284  
311  
ns  
di/dt = 2681 A/μs  
di/dt = 2670 A/μs  
di/dt = 2690 A/μs  
4,34  
6,18  
6,90  
1,96  
2,82  
3,13  
2734  
2205  
2101  
±15  
600  
35  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
4,7  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 426 Ω  
-12  
+11  
200  
2
mW  
mW/K  
K
B(25/50)  
3500  
3560  
B-value  
B(25/100)  
K
Vincotech NTC Reference  
G
Copyright Vincotech  
4
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
100  
I
I
I
I
Z
Z
Z
Z
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
0,54  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
3,65E-02  
5,94E-02  
1,31E-01  
2,04E-01  
6,26E-02  
4,65E-02  
3,41E+00  
7,33E-01  
1,32E-01  
3,77E-02  
4,44E-03  
6,68E-04  
Copyright Vincotech  
5
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switch Characteristics  
figure 6.  
IGBT  
Safe operating area  
I C = f(VCE  
)
I
I
I
I
D =  
single pulse  
80  
Ts  
=
ºC  
V
VGE  
=
±15  
Tj =  
Tjmax  
Copyright Vincotech  
6
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
0,82  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
3,65E-02  
7,03E-02  
1,91E-01  
2,92E-01  
1,35E-01  
9,89E-02  
5,70E+00  
7,86E-01  
9,75E-02  
2,58E-02  
3,82E-03  
6,41E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical NTC characteristic  
Thermistor  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
7
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
600  
±15  
8
V
V
Ω
Ω
T
j
:
VCE  
VGE  
I C  
=
=
=
600  
±15  
35  
V
V
A
Tj:  
VCE  
VGE  
=
=
=
=
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
600  
±15  
8
V
V
Ω
:
600  
±15  
35  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
8
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
600  
±15  
8
°C  
V
150  
600  
±15  
35  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
600  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
600  
V
V
A
25 °C  
125 °C  
150 °C  
±15  
8
:
Tj  
VGE  
I C  
=
±15  
35  
:
Tj  
VGE  
R gon  
=
=
=
Copyright Vincotech  
9
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
600  
±15  
8
V
V
Ω
25 °C  
125 °C  
150 °C  
600  
±15  
35  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
Tj  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
600  
±15  
8
V
V
Ω
25 °C  
125 °C  
150 °C  
600  
±15  
35  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
Tj  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
10  
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
600  
At  
VCE  
=
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
600  
±15  
35  
V
V
A
25 °C  
±15  
8
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
VGE  
I C  
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj  
=
=
=
175  
°C  
Ω
R gon  
R goff  
8
8
Ω
Copyright Vincotech  
11  
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switching Definitions  
General conditions  
=
=
=
125 °C  
8 Ω  
T j  
Rgon  
R goff  
8 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon  
)
tdoff  
IC  
IC  
VGE  
tEoff  
VCE  
VGE  
VCE  
tEon  
-15  
VGE (0%) =  
-15  
V
VGE (0%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
35  
V
600  
35  
V
A
A
0,203  
0,739  
μs  
μs  
0,122  
0,372  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
VCE  
IC  
VCE  
tr  
tf  
IC  
VC (100%) =  
I C (100%) =  
600  
35  
V
VC (100%) =  
I C (100%) =  
600  
V
A
A
35  
t f  
=
0,118  
μs  
tr  
=
0,017  
μs  
Copyright Vincotech  
12  
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Eoff  
Poff  
Eon  
tEoff  
tEon  
P off (100%) =  
Eoff (100%) =  
20,99  
3,17  
0,74  
kW  
mJ  
μs  
P on (100%) =  
Eon (100%) =  
20,99  
1,92  
0,37  
kW  
mJ  
μs  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
fitted  
VF  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
600  
V
35  
A
-76  
0,284  
A
μs  
t rr  
=
Copyright Vincotech  
13  
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Inverter Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr  
)
Turn-on Switching Waveforms & definition of tErec (tErec  
=
integrating time for Erec)  
IF  
Qr  
Erec  
tErec  
Prec  
35  
A
20,99  
2,82  
0,58  
kW  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
6,18  
0,58  
μC  
μs  
mJ  
μs  
t Qr  
=
tErec =  
Copyright Vincotech  
14  
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Ordering Code & Marking  
Version  
with thermal paste 17 mm housing with press-fit pins  
Ordering Code  
10-P1126PA035M701-L827F19Y-/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVVWWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
1
X
Y
0
0
0
0
0
0
0
0
0
Functions  
DC-123  
52,6  
49,9  
42,65  
39,65  
35,15  
28,4  
24  
2
DC-123  
G15  
3
4
S15  
5
Therm1  
Therm2  
G13  
6
7
8
21  
S13  
9
12,2  
G11  
10  
11  
12  
13  
9,2  
2,7  
0
0
0
S11  
DC-123  
DC-123  
DC+123  
0
0
14,65  
14  
15  
16  
17  
18  
19  
20  
21  
22  
2,7  
0
14,65  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
DC+123  
Ph1  
2,7  
5,4  
9,6  
12,6  
19,6  
22,3  
25  
Ph1  
Ph1  
S12  
G12  
Ph2  
Ph2  
Ph2  
23  
24  
25  
26  
27  
28  
29  
30  
31  
29,7  
32,7  
39,7  
42,7  
47,2  
49,9  
52,6  
52,6  
49,9  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
28,6  
14,65  
14,65  
S14  
G14  
S16  
G16  
Ph3  
Ph3  
Ph3  
DC+123  
DC+123  
Copyright Vincotech  
15  
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11, T12, T13, T14,  
T15, T16  
IGBT  
1200 V  
35 A  
35 A  
Inverter Switch  
D11, D12, D13, D14,  
D15, D16  
FWD  
NTC  
1200 V  
Inverter Diode  
Thermistor  
Rt  
Copyright Vincotech  
16  
14 Dec. 2017 / Revision 1  
10-P1126PA035M701-L827F19Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-P1126PA035M701-L827F19Y-D1-14  
14 Dec. 2017  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
14 Dec. 2017 / Revision 1  

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