10-P112M3A025SH-M746F09Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-P112M3A025SH-M746F09Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总28页 (文件大小：9045K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-P112M3A025SH-M746F09Y
datasheet
flow3xMNPC 1
1200 V / 25 A
Features
flow 1 17 mm housing
● 3 phase mixed voltage component topology
● Neutral point clamped inverter
● Reactive power capability
● Low inductance layout
Schematic
Target applications
● Solar inverter
● UPS
Types
● 10-P112M3A025SH-M746F09Y
Copyright Vincotech
1
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
31
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
75
A
Ptot
94
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
600
22
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
150
41
A
Ptot
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
150
Boost Switch
VCES
Collector-emitter voltage
600
27
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
56
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
13
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
36
A
Single Half Sine Wave,
tp = 10 ms
0
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
39
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
12,65
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00085 25
5,3
5,8
6,3
V
25
25
1,78
2,11
2,42
2,42(1)
15
0
V
125
1200
0
25
25
2,4
µA
nA
Ω
20
120
None
1430
115
75
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 960 V
15
25
115
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,01
K/W
25
73
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
74,2
15
tr
125
25
18
Rgon = 16 Ω
Rgoff = 16 Ω
166,4
219,8
21,09
116,3
0,17
0,3
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
350
15
tf
ns
125
25
QrFWD=0,191 µC
QrFWD=0,442 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
0,367
0,629
125
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,88
2,47
1,73
2,73(1)
100
VF
IR
Forward voltage
Reverse leakage current
15
V
125
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,71
K/W
25
16,08
22,27
23,04
32,92
0,191
0,442
0,025
0,05
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=1415 A/µs
di/dt=1159 A/µs
Qr
±15
350
15
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
1860
1998
(dirf/dt)max
125
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00029 25
5
5,8
6,5
V
25
20
1,1
1,53
1,7
1,9(1)
15
0
V
125
600
0
25
25
1,1
µA
nA
Ω
20
300
None
1100
71
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
32
VCC = 480 V
15
20
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,7
K/W
25
72,4
74,2
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
14
tr
125
25
15,6
Rgon = 16 Ω
Rgoff = 16 Ω
131,2
157,2
33,89
68,86
0,313
0,387
0,379
0,529
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
350
15
tf
ns
125
25
QrFWD=0,693 µC
QrFWD=1,51 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,18
2,31
2,65(1)
VF
IR
Forward voltage
8
125
150
25
V
2,68(1)
0,06
0,7
Reverse leakage current
Thermal
Vr = 1200 V
mA
150
0,3
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,44
K/W
25
21,09
24,46
29,92
34,71
0,693
1,51
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=1124 A/µs
di/dt=1109 A/µs
Qr
±15
350
15
μC
125
25
0,137
0,382
1972
2214
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Copyright Vincotech
7
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
70
70
VGE
:
7 V
8 V
60
50
40
30
20
10
0
60
50
40
30
20
10
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
2,5
5,0
7,5
10,0
12,5
0,0
2,5
5,0
7,5
10,0
12,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
25
10
0
20
15
10
5
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
1,009
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,44E-02
2,46E-01
4,48E-01
1,38E-01
5,48E-02
3,85E-02
1,03E+00
1,79E-01
5,38E-02
1,04E-02
1,66E-03
8,73E-04
Copyright Vincotech
9
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,713
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,49E-02
1,69E-01
9,61E-01
2,39E-01
1,24E-01
7,56E-02
7,06E-02
2,70E+00
4,49E-01
9,37E-02
3,41E-02
6,38E-03
1,23E-03
3,59E-04
Copyright Vincotech
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10-P112M3A025SH-M746F09Y
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
0
50
40
30
20
10
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
V
CE(V)
tp
=
=
tp
=
250
15
μs
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
V
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Short circuit withstand time as a function of VGE
IC = f(VGE
)
tsc = f(VGE)
20
13
12
11
10
9
15
10
5
8
7
6
0
0
5
10
2
4
6
8
10
12
11
12
13
14
15
16
V
GE(V)
V
GE(V)
tp
VCE
=
=
VCE
=
250
10
μs
V
At
333
333
V
25 °C
Tj:
Tj ≤
125 °C
°C
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Boost Switch Characteristics
figure 12.
IGBT
figure 13.
IGBT
Transient thermal impedance as a function of pulse width
Typical short circuit current as a function of VGE
ISC = f(VGE
)
Zth(j-s) = f(tp)
1
10
350
300
250
200
150
100
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
12
13
14
15
16
17
18
19
20
21
10
10
10
10
tp(s)
V
GE(V)
VCE
=
At
333
333
V
D =
tp / T
1,701
Tj ≤
°C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,97E-02
3,46E-01
8,15E-01
2,54E-01
7,70E-02
1,09E-01
1,34E+00
1,70E-01
5,34E-02
7,74E-03
1,33E-03
2,63E-04
figure 14.
IGBT
figure 15.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
20,0
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
5,0
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
33
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Boost Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,436
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,03E-01
3,89E-01
9,47E-01
5,16E-01
4,81E-01
1,23E+00
1,75E-01
4,78E-02
8,99E-03
1,81E-03
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datasheet
Thermistor Characteristics
figure 18.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Buck Switching Characteristics
figure 19.
IGBT
figure 20.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eon
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
350
±15
15
V
125 °C
V
A
Rgon
Rgoff
16
figure 21.
FWD
figure 22.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
V
A
125 °C
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10-P112M3A025SH-M746F09Y
datasheet
Buck Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
16
°C
V
125
350
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 25.
FWD
figure 26.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,12
0,10
0,08
0,06
0,04
0,02
0,00
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
V
A
125 °C
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Buck Switching Characteristics
figure 27.
FWD
figure 28.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
125 °C
V
A
figure 29.
FWD
figure 30.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
125 °C
V
A
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Buck Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
3500
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
V
A
125 °C
figure 33.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
60
IC MAX
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Boost Switching Characteristics
figure 34.
IGBT
figure 35.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
350
±15
15
V
125 °C
V
A
Rgon
Rgoff
16
figure 36.
FWD
figure 37.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
125 °C
V
A
Copyright Vincotech
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12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Boost Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
-1
10
-1
10
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
16
°C
V
125
350
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 40.
FWD
figure 41.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
125 °C
V
A
Copyright Vincotech
21
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Boost Switching Characteristics
figure 42.
FWD
figure 43.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
V
A
125 °C
figure 44.
FWD
figure 45.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
125 °C
V
A
Copyright Vincotech
22
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Boost Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
3500
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
350
±15
15
V
V
A
125 °C
figure 48.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
125
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
23
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Switching Definitions
figure 49.
IGBT
figure 50.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Switching Definitions
figure 53.
FWD
figure 54.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-P112M3A025SH-M746F09Y
10-P112M3A025SH-M746F09Y-/7/
10-P112M3A025SH-M746F09Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
+DC
GND
G3
52,2
46,2
47
2
0
3
3
4
40,9
44
0
GND
S3
5
3
6
34,9
34,9
28,9
25,9
22,9
22,9
16,9
16,9
10,9
10,9
6
0
-DC
-DC
GND
S7
7
3
8
0
9
2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
0
GND
G7
3
0
+DC
+DC
GND
G11
GND
S11
-DC
S12
G12
S10
G10
G6
3
0
3
0
7,9
3
0
0
4,75
1,75
13,25
13,25
21,25
21,25
30,4
33,4
40,15
40,15
50,45
50,45
0
8,9
7,9
13,7
10,7
10,7
13,7
9,7
9,7
11,2
8,2
10,7
13,7
16,35
19,35
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
S6
S8
G8
S4
G4
S2
G2
NTC
NTC
OUT3
OUT3
G9
0
5,45
8,25
11,25
14,25
23
S9
S5
26
G5
29
OUT2
OUT2
OUT1
OUT1
G1
31,8
40,4
43,2
46,2
49,2
S1
Copyright Vincotech
26
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Pinout
DC+
12,13
DC+
1
T1
T5
38
T9
D1
D5
D9
35
G9
43
44
G5
S5
G1
S1
S9
36
29
30
37
S2
G2
D2
T2
GND
GND
GND
OUT1
41,42
2,4
D3
5
3
24
23
T3
S3
G3
S6
G6
D6
T6
OUT2
39,40
8,10
D7
9
21
22
T7
S7
G7
S10
G10
11
D10
T10
OUT3
33,34
14,16
D11
17
15
T11
S11
G11
T4
T8
T12
20
D4
D8
D12
28
27
26
25
NTC
G4
S4
G8
S8
G12
S12
19
31
NTC1
32
NTC2
DC-
6,7
18
DC-
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T4, T5, T8, T9, T12
IGBT
1200 V
25 A
Buck Switch
D2, D3, D6, D7, D10,
FWD
IGBT
600 V
600 V
15 A
20 A
8 A
Buck Diode
D11
T3, T2, T7, T6, T11,
Boost Switch
T10
D1, D4, D5, D8, D9,
FWD
1200 V
Boost Diode
Thermistor
D12
NTC
Thermistor
Copyright Vincotech
27
12 Sep. 2021 / Revision 6
10-P112M3A025SH-M746F09Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Introduce Rth values with PSX-P7 TIM
10-P112M3A025SH-M746F09Y-D6-14
12 Sep. 2021
Separate datasheet for pressfit pin version
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
12 Sep. 2021 / Revision 6
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