10-PG06PPA020SJ-LJ01B08T [VINCOTECH]
5us short circuit withstand time;High speed switching;Low EMI;Short tail current;
| 型号： | 10-PG06PPA020SJ-LJ01B08T |
| 厂家： | 
VINCOTECH |
| 描述： | 5us short circuit withstand time;High speed switching;Low EMI;Short tail current |
| 文件： | 总32页 (文件大小：9483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PG06PPA020SJ-LJ01B08T
datasheet
flowPIM 1 + PFC
600 V / 20 A
Features
flow 1 12 mm housing
● One-phase rectifier
● Interleaved PFC circuit
● High speed IGBT in the inverter
● Integrated shunts and capacitors
●
Built-in NTC
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PG06PPA020SJ-LJ01B08T
Copyright Vincotech
1
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
23
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
57
W
V
VGES
±20
5
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
21
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
48
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
27
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
56
W
V
VGES
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
650
25
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
48
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
8
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
12
38
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Rectifier Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
44
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
270
365
64
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
terminal temperature Tk =
90 C°
I
DC current
20
2
A
Ptot
Top
Power dissipation
Tj = Tjmax
Ts = 80 °C
W
°C
Operation Temperature
-65 ... 170
Copyright Vincotech
3
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Shunt
terminal temperature Tk =
90 C°
I
DC current
20
2
A
Ptot
Top
Power dissipation
Tj = Tjmax
Ts = 80 °C
W
°C
Operation Temperature
-65 ... 170
Capacitor (PFC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
7,82
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
4
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00028 25
25
5
5,8
6,5
V
V
1,83
2,06
2,12
1,8(1)
VCEsat
Collector-emitter saturation voltage
15
20
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
0,6
µA
nA
Ω
20
25
25
100
None
700
24
Cies
Cres
pF
pF
f = 1 Mhz
0
25
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,67
K/W
25
60,32
59,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
59,36
30,08
31,2
tr
125
150
25
31,2
Rgon = 16 Ω
Rgoff = 16 Ω
86,88
107,36
111,84
22,21
38,32
43,74
0,414
0,55
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
20
tf
125
150
25
ns
QrFWD=0,559 µC
QrFWD=1,21 µC
QrFWD=1,48 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,588
0,229
0,369
0,403
Eoff
125
150
Copyright Vincotech
5
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,76
1,66
1,61
1,95(1)
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
Thermal
Vr = 600 V
25
27
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,99
K/W
25
6,64
9,71
IRRM
Peak recovery current
125
150
25
A
10,67
198,64
271,14
309,91
0,559
1,21
trr
Reverse recovery time
125
150
25
ns
di/dt=537 A/µs
di/dt=702 A/µs
di/dt=573 A/µs
Qr
Recovered charge
±15
350
20
125
150
25
μC
1,48
0,138
0,303
0,378
30,78
67,04
68,48
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
6
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0002
20
25
3,3
4
4,7
V
V
25
1,54
1,69
1,74
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
1200
30
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
5
VCC = 520 V
15
20
48
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,7
K/W
25
17
19
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
13
9
tr
125
150
25
11
9
Rgon = 16 Ω
Rgoff = 16 Ω
99
td(off)
Turn-off delay time
Fall time
125
150
25
115
120
8,08
13,64
10,32
0,315
0,36
0,47
0,064
0,146
0,11
ns
0/15
400
20
tf
125
150
25
ns
QrFWD=0,307 µC
QrFWD=0,491 µC
QrFWD=0,612 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
7
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,82
1,8
2,22(1)
1,28
VF
IR
Forward voltage
20
125
150
V
1,76
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,96
K/W
25
15,35
19,92
24
IRRM
Peak recovery current
125
150
25
A
32,73
40,14
41,74
0,307
0,491
0,612
0,06
trr
Reverse recovery time
125
150
25
ns
di/dt=2664 A/µs
di/dt=2094 A/µs
di/dt=2443 A/µs
Qr
Recovered charge
0/15
400
20
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,109
0,097
848,64
985,81
965,97
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
8
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Protection Diode
Static
25
1,23
1,72
1,58
1,53
1,87(1)
VF
IR
Forward voltage
6
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
0,1
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,53
K/W
Rectifier Diode
Static
25
1,14
1,1
V
VF
IR
Forward voltage
31
125
25
20
Reverse leakage current
Vr = 1600 V
µA
150
1500
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,1
K/W
PFC Shunt
Static
R
Resistance
5
mΩ
%
Tolerance
1
1
Temperature coeficient
tc
20
ppm/K
Copyright Vincotech
9
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Shunt
Static
R
Resistance
5
mΩ
%
Tolerance
1
1
Temperature coeficient
tc
20
ppm/K
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
Tolerance
25
33
nF
%
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
20
10
0
15
10
5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
15
μs
V
D =
tp / T
1,667
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,37E-02
1,98E-01
7,72E-01
4,11E-01
2,02E-01
1,97E+00
2,51E-01
5,06E-02
7,66E-03
6,07E-04
Copyright Vincotech
11
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,985
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,91E-02
2,69E-01
8,60E-01
5,20E-01
2,47E-01
2,42E+00
2,03E-01
4,06E-02
6,04E-03
9,13E-04
Copyright Vincotech
13
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
0
50
40
30
20
10
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
20
10
0
15
10
5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,698
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,45E-01
5,50E-01
5,51E-01
3,26E-01
1,26E-01
7,07E-01
8,69E-02
2,05E-02
4,56E-03
6,55E-04
Copyright Vincotech
14
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,964
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,07E-01
3,62E-01
7,68E-01
5,43E-01
1,84E-01
1,92E+00
1,49E-01
4,26E-02
7,00E-03
1,27E-03
Copyright Vincotech
16
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Sw. Protection Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
17,5
15,0
12,5
10,0
7,5
10
0
10
-1
10
0,5
0,2
0,1
5,0
0,05
0,02
0,01
0,005
0
2,5
-2
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,527
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,24E-02
1,75E-01
7,31E-01
7,14E-01
4,89E-01
3,27E-01
9,29E+00
3,21E-01
4,97E-02
1,16E-02
2,11E-03
3,78E-04
Copyright Vincotech
17
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Rectifier Diode Characteristics
figure 17.
Rectifier
figure 18.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,098
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,35E-02
9,34E-02
3,79E-01
3,82E-01
1,24E-01
7,66E-02
3,78E+00
6,17E-01
8,75E-02
2,72E-02
5,56E-03
1,02E-03
Copyright Vincotech
18
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
19
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Inverter Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 22.
FWD
figure 23.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Inverter Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
-1
10
-1
10
td(off)
td(on)
tr
tf
tr
tf
-2
10
-2
10
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
16
°C
V
150
350
±15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 26.
FWD
figure 27.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Inverter Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
FWD
figure 31.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
IRM
5,0
5,0
IRM
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Inverter Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
700
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
23
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
24
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tr
td(on)
tf
tr
tf
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
16
°C
V
150
400
0/15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
25
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
26
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
PFC Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
3500
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
27
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Switching Definitions
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
28
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Switching Definitions
figure 54.
FWD
figure 55.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
29
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PG06PPA020SJ-LJ01B08T
10-PG06PPA020SJ-LJ01B08T-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
S2sh1
S1sh1
DC-Rect
DC-Rect
PFC-
50,5
49,5
45,5
42,8
38,5
38,5
38,5
31,8
31,8
25,1
23,1
22,1
19,1
19,1
15
7,4
4,4
0
2
3
4
0
5
0
6
3
S1sh2
S2sh2
PFC+
PFC+
S1sh3
S2sh3
PFC-
7
6
8
1,2
3,9
1,9
4,9
0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
0
Therm1
Therm2
G11
3
0
12
0
DC-1
9
0
G13
6
0
DC-2
3
0
G15
0
0
DC-3
0
15,15
17,85
25,5
28,5
25,5
28,5
25,5
28,5
16,3
19,3
28,5
28,5
19,3
19,3
28,5
28,5
28,5
28,5
17,2
14,45
DC+Inv
DC+Inv
G16
0
0
0
Ph3
7,7
G14
7,7
Ph2
15,4
15,4
21,7
21,7
23,4
31,1
32,9
35,9
39,1
41,8
49,8
52,5
44,3
44,3
G12
Ph1
G27
S27
PFC2
PFC1
G25
S25
DC+Rect
DC+Rect
ACIn1
ACIn1
ACIn2
ACIn2
Copyright Vincotech
30
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Pinout
35,36
8,9
PFC+
21,22
DC+Rect
DC+Inv
D25
D27
PFC1
PFC2
31
32
T12
T14
T16
D11
G14
D13
G16
D15
D32
D34
G12
27
25
23
Ph1
Ph2
37,38
39,40
C25
C27
28
26
ACIn1
ACIn2
T25
33
T27
Ph3
24
29
30
D31
D33
G25
S25
D47
D45
G27
S27
T11
T13
T15
D12
G13
D14
G15
D16
34
G11
15
17
19
SH1
S2sh2
S2sh3
11
7
SH2
SH3
6
10
S1sh3
DC-1
16
DC-2
18
DC-3
20
S2sh1 S1sh1
S1sh2
1
2
Rt
DC-Rect
3,4
PFC-
5,12
Therm1
13
Therm2
14
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
600 V
20 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
T25, T27
FWD
15 A
IGBT
FWD
650 V
650 V
650 V
1600 V
20 A
20 A
6 A
PFC Switch
PFC Diode
D25, D27
D45, D47
D31, D32, D33, D34
SH1
FWD
PFC Sw. Protection Diode
Rectifier Diode
PFC Shunt
Rectifier
Resistor
Resistor
Capacitor
Thermistor
31 A
SH2, SH3
C25, C27
Shunt
630 V
Capacitor (PFC)
Thermistor
Rt
Copyright Vincotech
31
14 Sep. 2020 / Revision 1
10-PG06PPA020SJ-LJ01B08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PG06PPA020SJ-LJ01B08T-D1-14
14 Sep. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
14 Sep. 2020 / Revision 1
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明