10-PG12NAB008ME-LC59F66T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-PG12NAB008ME-LC59F66T |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总65页 (文件大小：10252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
flowANPC 1 split
1200 V / 8 mΩ
Features
● Split Advanced NPC topology
flow 1 12 mm housing
●
●
Ultra-high switching frequency with SiC MOSFETs
Optimized for 1500 Vdc applications
● Split topology for better thermal performance
● No cross-conduction at high frequencies
LC59F66T
LC69F66T
Schematic
Target applications
● Solar Inverters
Types
● 10-PG12NAB008ME-LC59F66T
● 10-PG12NAC008ME-LC69F66T
LC69F66T
LC59F66T
1
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC Switch
VDSS
Drain-source voltage
1200
147
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
480
A
Ptot
Total power dissipation
274
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
AC Diode
VRRM
Peak repetitive reverse voltage
1200
74
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
183
330
185
175
A
Single Half Sine Wave,
tp = 10 ms
A
Tj = Tjmax
Ts = 80 °C
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch
VCES
Collector-emitter voltage
1200
150
300
288
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
2
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
DC-Link Diode
VRRM
Peak repetitive reverse voltage
1200
86
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
158
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch Prot. Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1200
21
V
A
IF
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
65
A
Single Half Sine Wave,
tp = 10 ms
21
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
70
Tjmax
Maximum junction temperature
175
Neutral Point Diode
VRRM
Peak repetitive reverse voltage
1200
111
300
183
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
3
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
DC-Link Switch
VCES
Collector-emitter voltage
1200
150
300
288
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
DC-Link Switch Prot. Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
86
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
158
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Capacitor (GS)
VMAX
Maximum DC voltage
25
V
Top
Operation Temperature
0 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
min. 12,7
8,33
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
4
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Switch
Static
25
5,6
1,8
9
10,4(1)
rDS(on)
Drain-source on-state resistance
15
150
125
150
11
12
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,046
25
25
25
2,5
40
3,6
1000
76
V
15
0
0
nA
µA
Ω
1200
4
0,425
472
13428
516
32
Qg
Gate charge
-4/15
800
160
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
0
pF
V
80
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,35
K/W
AC Diode
Static
25
1,5
1,8(1)
600
VF
IR
Forward voltage
60
125
150
1,86
2,01
V
Reverse leakage current
Thermal
Vr = 1200 V
25
105
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,51
K/W
5
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Real Open Configuration
Switch Dynamic
25
40
td(on)
Turn-on delay time
Rise time
125
150
25
38,08
37,76
12,48
11,52
11,2
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
85,76
94,08
96,32
39,13
47,46
50,62
0,445
0,384
0,361
0,878
0,947
0,96
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-2/15
600
100
tf
125
150
25
ns
QrFWD=0,471 µC
QrFWD=0,525 µC
QrFWD=0,559 µC
Eon
Turn-on energy (per pulse)
125
150
25
mWs
mWs
Eoff
Turn-off energy (per pulse)
125
150
Diode Dynamic
25
65,93
70,99
73,39
16,66
16,68
17
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
0,471
0,525
0,559
0,355
0,424
0,451
10019
10682
10883
di/dt=10208 A/µs
Qr
Recovered charge
di/dt=11198 A/µs -2/15
di/dt=11243 A/µs
600
100
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
6
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Reactive Open Configuration
Switch Dynamic
25
42,56
38,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
38,4
12,8
tr
125
150
25
11,2
10,88
86,4
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
96,64
99,52
30,88
38,7
ns
-2/15
600
100
tf
125
150
25
ns
16,89
0,636
0,428
0,404
0,948
1,07
QrFWD=1,17 µC
QrFWD=1,32 µC
QrFWD=1,41 µC
Eon
Turn-on energy (per pulse)
125
150
25
mWs
mWs
Eoff
Turn-off energy (per pulse)
Diode Dynamic
125
150
1,1
25
86,09
90,12
86,31
26,49
27,89
29,04
1,17
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=9714 A/µs
Qr
Recovered charge
di/dt=12076 A/µs -2/15
di/dt=12388 A/µs
600
100
125
150
25
1,32
μC
1,41
0,658
0,761
0,883
6691
2403
2216
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
7
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Real Short Configuration
Dynamic
25
40
td(on)
Turn-on delay time
Rise time
125
150
25
38,08
37,76
12,16
11,2
ns
ns
tr
125
150
25
10,88
86,4
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
94,72
97,28
18,62
20,72
21,14
0,495
0,351
0,29
ns
-2/15
600
100
tf
125
150
25
ns
QrFWD=1,25 µC
QrFWD=1,4 µC
QrFWD=1,54 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,731
0,793
0,805
Eoff
125
150
AC Reactive Short Configuration
Dynamic
25
42,56
38,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
37,76
12,16
10,56
10,56
88
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
98,88
101,44
21,17
22,06
23,75
0,579
0,366
0,342
0,783
0,866
0,889
ns
-2/15
600
100
tf
125
150
25
ns
QrFWD=1,29 µC
QrFWD=1,39 µC
QrFWD=1,55 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
8
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,015
150
25
5,4
6
6,6
V
V
25
1,57
1,8
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,86
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
320
VCC = 600 V
15
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,33
K/W
Dynamic
25
335
349
td(on)
Turn-on delay time
125
150
25
ns
ns
351
38
tr
Rise time
125
150
25
47
49
Rgon = 2 Ω
Rgoff = 2 Ω
304
td(off)
Turn-off delay time
Fall time
125
150
25
351
ns
363
±15
600
100
100,62
139,03
142,44
8,92
11,15
11,84
7,89
10,42
10,95
tf
125
150
25
ns
QrFWD=10,4 µC
QrFWD=15,02 µC
QrFWD=16,24 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
9
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Diode
Static
25
1,82
1,96
1,96
2,1(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,6
K/W
25
82,7
86,13
88,3
IRRM
Peak recovery current
125
150
25
A
309,71
419,43
452,63
10,4
trr
Reverse recovery time
125
150
25
ns
di/dt=2662 A/µs
di/dt=2286 A/µs
di/dt=2159 A/µs
Qr
Recovered charge
±15
600
100
125
150
25
15,02
16,24
3,99
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
5,94
mWs
A/µs
6,43
506,5
512,55
504,33
(dirf/dt)max
125
150
10
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Neutral Point Switch Prot. Diode
Static
25
2,37
2,47
2,71(1)
VF
IR
Forward voltage
15
125
150
25
V
2,77(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
900
1800
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,35
K/W
11
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Diode
Static
25
1,8
1,9
2,1(1)
VF
IR
Forward voltage
150
125
150
V
1,89
Reverse leakage current
Vr = 1200 V
25
40
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,52
K/W
Dynamic
25
116,53
119,59
117,81
268,1
406,33
453,74
12,79
20,79
22,27
4,36
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2578 A/µs
di/dt=2565 A/µs
di/dt=2545 A/µs
Qr
Recovered charge
±15
600
100
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
7,63
mWs
A/µs
8,66
864,58
625,78
631,91
(dirf/dt)max
125
150
12
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,015
150
25
5,4
6
6,6
V
V
25
1,57
1,8
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,86
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
320
VCC = 600 V
15
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,33
K/W
25
317
335
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
350
36
tr
125
150
25
41
45
Rgon = 2 Ω
Rgoff = 2 Ω
306
td(off)
Turn-off delay time
Fall time
125
150
25
351
ns
368
±15
600
100
96,77
136,13
145,76
9,56
13,18
13,42
7,12
9,9
tf
125
150
25
ns
QrFWD=12,79 µC
QrFWD=20,79 µC
QrFWD=22,27 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
11,12
13
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Switch Prot. Diode
Static
25
1,82
1,96
1,96
2,1(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,6
K/W
Capacitor (GS)
Static
DC bias voltage =
0 V
C
Capacitance
25
10
nF
%
Tolerance
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
14
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
300
300
250
200
150
100
50
VGS
:
-4 V
-2 V
0 V
250
200
150
100
50
2 V
4 V
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
-50
-100
-150
-200
-250
-300
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
DS(V)
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
VDS(V)
tp
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
=
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
350
10
300
250
200
150
100
50
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,347
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
4,51E-02
5,88E-02
1,53E-01
5,77E-02
3,26E-02
3,13E+00
4,93E-01
6,43E-02
9,86E-03
1,22E-03
15
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
14
°C
V
VGS
=
Tj =
Tjmax
16
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,513
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,36E-02
7,62E-02
1,86E-01
1,35E-01
6,26E-02
3,23E+00
5,23E-01
7,69E-02
1,65E-02
2,65E-03
17
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,33
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,65E-02
5,74E-02
8,95E-02
1,41E-01
9,15E-03
7,29E-03
9,29E-03
5,52E+00
1,28E+00
2,47E-01
6,93E-02
5,43E-03
1,62E-03
4,10E-04
18
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
19
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,6
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,99E-02
1,04E-01
1,63E-01
2,56E-01
1,66E-02
1,33E-02
1,69E-02
5,52E+00
1,28E+00
2,47E-01
6,93E-02
5,43E-03
1,62E-03
4,10E-04
20
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Switch Prot. Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,351
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,74E-02
2,35E-01
3,66E-01
5,77E-01
3,75E-02
2,98E-02
3,80E-02
5,52E+00
1,28E+00
2,47E-01
6,93E-02
5,43E-03
1,62E-03
4,10E-04
21
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,52
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,59E-02
9,05E-02
1,41E-01
2,22E-01
1,44E-02
1,15E-02
1,46E-02
5,52E+00
1,28E+00
2,47E-01
6,93E-02
5,43E-03
1,62E-03
4,10E-04
22
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Switch Characteristics
figure 19.
IGBT
figure 20.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 21.
IGBT
figure 22.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,33
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,65E-02
5,74E-02
8,95E-02
1,41E-01
9,15E-03
7,29E-03
9,29E-03
5,52E+00
1,28E+00
2,47E-01
6,93E-02
5,43E-03
1,62E-03
4,10E-04
23
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Switch Characteristics
figure 23.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
24
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Switch Prot. Diode Characteristics
figure 24.
FWD
figure 25.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,6
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,99E-02
1,04E-01
1,63E-01
2,56E-01
1,66E-02
1,33E-02
1,69E-02
5,52E+00
1,28E+00
2,47E-01
6,93E-02
5,43E-03
1,62E-03
4,10E-04
25
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Thermistor Characteristics
figure 26.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
26
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Open Switching Characteristics
figure 27.
MOSFET
figure 28.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 29.
FWD
figure 30.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
27
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Open Switching Characteristics
figure 31.
MOSFET
figure 32.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
tf
tr
tf
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-2/15
2
°C
V
150
600
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
-2/15
100
V
Ω
Ω
A
2
figure 33.
FWD
figure 34.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
-2/15
100
V
25 °C
25 °C
VGS
VGS
ID
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
28
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Open Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-2/15
2
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
figure 37.
FWD
figure 38.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
90
80
70
60
50
40
30
20
10
0
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-2/15
2
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
29
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Open Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
17500
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
15000
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
At
600
-2/15
100
V
25 °C
25 °C
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 41.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
350
ID MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
30
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Open Measurement Circuit
31
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Open Switching Characteristics
figure 27.
MOSFET
figure 28.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eon
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 29.
FWD
figure 30.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
32
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Open Switching Characteristics
figure 31.
MOSFET
figure 32.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
tr
tf
tf
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-2/15
2
°C
V
150
600
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
-2/15
100
V
Ω
Ω
A
2
figure 33.
FWD
figure 34.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
VGS
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
33
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Open Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
figure 37.
FWD
figure 38.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
125
100
75
50
25
0
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
34
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Open Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
20000
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
At
600
-2/15
100
V
25 °C
25 °C
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 41.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
350
ID MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
35
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Open Measurement Circuit
36
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Short Switching Characteristics
figure 27.
MOSFET
figure 28.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 29.
FWD
figure 30.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
37
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Short Switching Characteristics
figure 31.
MOSFET
figure 32.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
tr
tf
tf
tr
-2
-2
10
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-2/15
2
°C
V
150
600
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
-2/15
100
V
Ω
Ω
A
2
figure 33.
FWD
figure 34.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
VGS
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
38
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Short Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
figure 37.
FWD
figure 38.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
39
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Short Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
20000
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
At
600
-2/15
100
V
25 °C
25 °C
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 41.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
350
ID MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
40
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Real Short Measurement Circuit
41
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Short Switching Characteristics
figure 27.
MOSFET
figure 28.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 29.
FWD
figure 30.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-2/15
2
V
V
Ω
125 °C
150 °C
600
-2/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
42
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Short Switching Characteristics
figure 31.
MOSFET
figure 32.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
tf
tr
tf
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-2/15
2
°C
V
150
600
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
-2/15
100
V
Ω
Ω
A
2
figure 33.
FWD
figure 34.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
-2/15
100
V
25 °C
25 °C
VGS
VGS
ID
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
43
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Short Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-2/15
2
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
figure 37.
FWD
figure 38.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
175
150
125
100
75
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
50
25
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-2/15
100
125 °C
150 °C
Tj:
Tj:
Rgon
44
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Short Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
22500
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
20000
17500
15000
12500
10000
7500
5000
2500
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-2/15
2
V
At
600
-2/15
100
V
25 °C
25 °C
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 41.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
350
ID MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
45
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Reactive Short Measurement Circuit
46
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Switching Definitions
47
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
AC Switching Definitions
48
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Switching Characteristics
figure 42.
IGBT
figure 43.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
25
20
15
10
5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
2,5
0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 44.
IGBT
figure 45.
IGBT
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
49
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Switching Characteristics
figure 46.
IGBT
figure 47.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
100
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 48.
IGBT
figure 49.
IGBT
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
50
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Switching Characteristics
figure 50.
IGBT
figure 51.
IGBT
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 52.
IGBT
figure 53.
IGBT
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
51
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Switching Characteristics
figure 54.
IGBT
figure 55.
IGBT
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
3500
4500
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
0
25
50
75
100
125
150
175
200
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 56.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
52
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Neutral Point Measurement Circuit
53
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Switching Characteristics
figure 57.
IGBT
figure 58.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
30
25
20
15
10
5
20,0
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
2,5
0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 59.
IGBT
figure 60.
IGBT
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
12,5
10,0
7,5
10
Erec
Erec
8
Erec
Erec
6
Erec
5,0
4
Erec
2,5
2
0,0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
54
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Switching Characteristics
figure 61.
IGBT
figure 62.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
100
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 63.
IGBT
figure 64.
IGBT
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
55
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Switching Characteristics
figure 65.
IGBT
figure 66.
IGBT
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
35
30
25
20
15
10
5
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 67.
IGBT
figure 68.
IGBT
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
56
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Switching Characteristics
figure 69.
IGBT
figure 70.
IGBT
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
25
50
75
100
125
150
175
200
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 71.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
57
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
DC-Link Measurement Circuit
58
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Switching Definitions
figure 72.
IGBT
figure 73.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 74.
IGBT
figure 75.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
59
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Switching Definitions
figure 76.
FWD
figure 77.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
60
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PG12NAB008ME-LC59F66T
10-PG12NAB008ME-LC59F66T-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
High Side Module 10-PG12NAB008ME-LC59F66T
Outline
Pin table [mm]
Function 25
Pin
1
X
Y
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
28,9
not assembled
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
2
52,9
49,9
52,9
49,9
3
3
0
0
DC-1
3
DC-1
DC-1
DC-1
4
5
6
not assembled
7
40
37
0
0
GND1
GND1
40,9
43,9
46,9
49,9
52,9
44,3
41,2
38,2
37,95
Ph1
Ph1
Ph1
Ph1
Ph1
N1
8
28,9
9
not assembled
not assembled
28,9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
28,9
21,8
18,9
0
0
GND1
GND1
28,9
17,9
not assembled
14,7
S15
G15
N1
9
0
0
DC+1
14,7
6
DC+1
DC+1
DC+1
G11
17,9
3
0
not assembled
not assembled
18,5
0
0
0
0
9,5
12,5
17,45
18,45
28,9
28,9
29,35
26,9
P1
P1
S11
15,6
12,45
15,45
0
G13
not assembled
not assembled
not assembled
not assembled
S13
Therm11
Therm12
3
not assembled
61
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
High Side Module 10-PG12NAB008ME-LC59F66T
Pinout
DC+1
14,15,16,17
T11
D11-a
G11
18
S11
19
P1
43,44
T13
D16-b
G13
20
C13
S13
21
GND1
Ph1
7,8,11,12
32,33,34,35,36
T15
D15-a
D13
G15
39
S15
38
N1
37,40
D12-b
Rt1
2,3,4,5
DC-1
Therm11
22
Therm12
23
Identification
Component
Voltage
Current
Function
Comment
ID
T13
D13
D16-b
T15
D12-b
D15-a
T11
MOSFET
FWD
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
25 V
8 mΩ
60 A
AC Switch
AC Diode
Neutral Point Diode
Neutral Point Switch
DC-Link Diode
FWD
150 A
150 A
100 A
15 A
IGBT
FWD
FWD
Neutral Point Switch Prot. Diode
DC-Link Switch
IGBT
150 A
100 A
D11-a
C13
FWD
DC-Link Switch Prot. Diode
Capacitor
Thermistor
Capacitor (GS)
Thermistor
Rt1
62
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PG12NAC008ME-LC69F66T
10-PG12NAC008ME-LC69F66T-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Low Side Module 10-PG12NAC008ME-LC69F66T
Outline
Pin table [mm]
Function 25
Ph2 26
Pin
1
X
Y
9
28,9
DC+2
GND2
52,9
52,9
49,9
52,9
49,9
6
not assembled
2
3
Ph2
Ph2
Ph2
Ph2
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
18,9
21,8
31
28,9
28,9
28,9
28,9
3
3
GND2
GND2
GND2
4
0
5
0
34
6
not assembled
not assembled
not assembled
0
not assembled
not assembled
7
8
43,9
46,9
49,9
52,9
28,9
28,9
28,9
28,9
DC-2
9
31,5
28,5
S14
G14
DC-2
DC-2
DC-2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
14,9
3
0
0
0
0
0
Therm21
Therm22
S16
35,9
G12
S12
35,35
17,9
9,5
12,5
not assembled
15,6
G16
26,9
26,9
N2
N2
not assembled
not assembled
13
not assembled
12,3
0
3
6
28,9
28,9
28,9
DC+2
17,8
15,2
P2
P2
DC+2
DC+2
12,3
63
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Low Side Module 10-PG12NAC008ME-LC69F66T
Pinout
DC+2
22,23,24,25
D11-b
P2
47,48
T16
D16-a
D14
G16
19
S16
18
Ph2
GND2
1,2,3,4,5
27,28,29,30
T14
D15-b
G14
10
C14
S14
9
N2
44,45
T12
D12-a
G12
41
S12
42
Rt2
33,34,35,36
DC-2
Therm21
16
Therm22
17
Identification
Component
Voltage
Current
Function
Comment
ID
T14
D14
MOSFET
FWD
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
25 V
8 mΩ
60 A
AC Switch
AC Diode
Neutral Point Switch
T16
IGBT
150 A
100 A
15 A
D11-b
D16-a
T12
FWD
DC-Link Diode
FWD
Neutral Point Switch Prot. Diode
DC-Link Switch
IGBT
150 A
150 A
100 A
D15-b
D12-a
C14
FWD
Neutral Point Diode
DC-Link Switch Prot. Diode
Capacitor (GS)
FWD
Capacitor
Thermistor
Rt2
Thermistor
64
Copyright Vincotech
29 Sep. 2020 / Revision 1
10-PG12NAB008ME-LC59F66T
10-PG12NAC008ME-LC69F66T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PG12NAx008ME-LCx9F66T-D1-14
29 Sep. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
65
Copyright Vincotech
29 Sep. 2020 / Revision 1
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