10-PY073AA050RG02-LK14L03Y [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-PY073AA050RG02-LK14L03Y |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总35页 (文件大小：9687K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY073AA050RG02-LK14L03Y
datasheet
flow3xANPFC 1
650 V / 50 A
Features
flow 1 12 mm housing
● 3-Phase Application
● High power low inductive package
● High speed IGBT
● Integrated NTC
Schematic
Target applications
● Charging Stations
● Power Supply
Types
● 10-PY073AA050RG02-LK14L03Y
Copyright Vincotech
1
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Negative Neutral Point Switch
VCES
Collector-emitter voltage
650
46
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
200
77
A
Ptot
W
V
VGES
±30
175
Tjmax
Maximum junction temperature
°C
Positive Neutral Point Switch
VCES
Collector-emitter voltage
650
46
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
200
77
A
Ptot
W
V
VGES
±30
175
Tjmax
Maximum junction temperature
°C
Negative Boost Diode
VRRM
Peak repetitive reverse voltage
650
28
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
80
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 25 °C
Ts = 80 °C
80
A
Tj = Tjmax
57
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Positive Boost Diode
VRRM
Peak repetitive reverse voltage
650
28
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
80
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 25 °C
Ts = 80 °C
80
A
Tj = Tjmax
57
W
°C
Tjmax
Maximum junction temperature
175
Negative Neutral Point Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
28
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
270
360
46
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Positive Neutral Point Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
44
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
270
365
59
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
3
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Positive Boost Diode Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
14
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
Positive Boost Blocking Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
28
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
270
360
46
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Capacitor (DC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
8,58
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Negative Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
5
0,03
50
25
5
6
7
V
V
25
1,5
1,66
1,7
1,9
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
0,01
0,2
mA
µA
Ω
30
None
4200
104
79
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
15
400
50
141
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,23
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
27,84
25,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
24,96
14,4
tr
125
150
25
15,04
15,36
157,76
178,88
184,96
24,91
37,38
42,58
0,302
0,359
0,351
0,779
1,08
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
45
tf
125
150
25
ns
QrFWD=0,07 µC
QrFWD=0,07 µC
QrFWD=0,07 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
1,13
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Positive Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
5
0,03
50
25
5
6
7
V
V
25
1,5
1,66
1,7
1,9
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
0,01
0,2
mA
µA
Ω
30
None
4200
104
79
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
15
400
50
141
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,23
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
27,8
25
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
24,3
15
tr
125
150
25
16
16,3
128
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
151
ns
162
0/15
400
45
41,9
58,4
62,1
0,24
0,259
0,263
1,15
1,68
1,81
tf
125
150
25
ns
QrFWD=0,117 µC
QrFWD=0,108 µC
QrFWD=0,107 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Negative Boost Diode
Static
25
1,38
1,52
1,57
4
1,55
400
VF
IR
Forward voltage
20
125
150
25
V
Reverse leakage current
Thermal
Vr = 650 V
µA
150
60
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,67
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
10,43
10,32
10,29
7,46
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
7,72
ns
7,6
0,07
di/dt=3352 A/µs
di/dt=3160 A/µs
di/dt=3117 A/µs
Qr
Recovered charge
0/15
400
45
125
150
25
0,07
μC
0,07
0,017
0,017
0,017
4239
3967
3896
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
7
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Positive Boost Diode
Static
25
1,38
1,52
1,57
4
1,55
400
VF
IR
Forward voltage
20
125
150
25
V
Reverse leakage current
Thermal
Vr = 650 V
µA
150
60
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,67
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
15,09
14,31
14,36
9,92
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
9,97
ns
9,88
0,117
0,108
0,107
0,028
0,023
0,022
4300
3910
4060
di/dt=3260 A/µs
di/dt=3250 A/µs
di/dt=3700 A/µs
Qr
Recovered charge
0/15
400
45
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
8
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Negative Neutral Point Diode
Static
25
1,13
1,09
1,29
VF
IR
Forward voltage
20
125
150
25
V
1,26
10
1
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,51
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Positive Neutral Point Diode
Static
25
1,14
1,1
1,3
VF
IR
Forward voltage
31
125
150
25
V
1,37
20
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1500
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,2
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
9
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Positive Boost Diode Protection Diode
Static
25
1,23
1,67
1,56
1,87
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
2,87
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Positive Boost Blocking Diode
Static
25
1,13
1,09
1,29
VF
IR
Forward voltage
20
125
150
25
V
1,26
10
1
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,51
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Capacitor (DC)
Static
C
Capacitance
Tolerance
150
2,5
nF
%
%
-10
10
Dissipation factor
f = 1 kHz
25
Copyright Vincotech
10
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
Copyright Vincotech
11
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Neutral Point Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,228
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,07E-02
1,43E-01
5,97E-01
2,58E-01
1,27E-01
5,33E-02
3,25E+00
5,26E-01
9,03E-02
2,71E-02
5,65E-03
7,25E-04
Copyright Vincotech
12
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Neutral Point Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Neutral Point Switch Characteristics
figure 6.
IGBT
figure 7.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 8.
IGBT
figure 9.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,228
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,07E-02
1,43E-01
5,97E-01
2,58E-01
1,27E-01
5,33E-02
3,25E+00
5,26E-01
9,03E-02
2,71E-02
5,65E-03
7,25E-04
Copyright Vincotech
14
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Neutral Point Switch Characteristics
figure 10.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Boost Diode Characteristics
figure 11.
FWD
figure 12.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,667
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,23E-01
4,95E-01
5,29E-01
4,07E-01
1,14E-01
1,39E+00
1,34E-01
3,82E-02
4,31E-03
6,14E-04
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,667
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,23E-01
4,95E-01
5,29E-01
4,07E-01
1,14E-01
1,39E+00
1,34E-01
3,82E-02
4,31E-03
6,14E-04
Copyright Vincotech
17
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Neutral Point Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,511
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,93E-02
1,22E-01
5,85E-01
5,38E-01
2,27E-01
9,06E+00
9,78E-01
1,29E-01
3,98E-02
4,50E-03
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Neutral Point Diode Characteristics
figure 17.
Rectifier
figure 18.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,195
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,87E-02
1,57E-01
7,33E-01
1,69E-01
7,37E-02
1,39E-02
6,80E+00
6,29E-01
9,05E-02
3,10E-02
4,76E-03
1,53E-02
Copyright Vincotech
19
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Boost Diode Protection Diode Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Copyright Vincotech
20
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Boost Blocking Diode Characteristics
figure 21.
Rectifier
figure 22.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,511
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,93E-02
1,22E-01
5,85E-01
5,38E-01
2,27E-01
9,06E+00
9,78E-01
1,29E-01
3,98E-02
4,50E-03
Copyright Vincotech
21
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Thermistor Characteristics
figure 23.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
22
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Neutral Point Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eon
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 26.
FWD
figure 27.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Neutral Point Switching Characteristics
figure 28.
IGBT
figure 29.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tr
tf
td(on)
tf
tr
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
8
°C
V
150
400
0/15
45
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 30.
FWD
figure 31.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,012
0,010
0,008
0,006
0,004
0,002
0,000
0,012
0,010
0,008
0,006
0,004
0,002
0,000
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Neutral Point Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
FWD
figure 35.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
5,0
2,5
2,5
0,0
0,0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Negative Neutral Point Switching Characteristics
figure 36.
FWD
figure 37.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
6000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 38.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Neutral Point Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
5
4
3
2
1
0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eon
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
Ω
125 °C
150 °C
400
0/15
45
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 41.
FWD
figure 42.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Neutral Point Switching Characteristics
figure 43.
IGBT
figure 44.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tf
td(on)
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
8
°C
V
150
400
0/15
45
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 45.
FWD
figure 46.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Neutral Point Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
FWD
figure 50.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
17,5
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
29
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Positive Neutral Point Switching Characteristics
figure 51.
FWD
figure 52.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
7000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
45
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 53.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
8
Ω
Copyright Vincotech
30
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Switching Definitions
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 56.
IGBT
figure 57.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
31
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Switching Definitions
figure 58.
FWD
figure 59.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
32
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PY073AA050RG02-LK14L03Y
10-PY073AA050RG02-LK14L03Y-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
TM61
Ph3
52,9
42,35
34,25
23,7
15,7
7,9
0
0
2
3
0
TM51
Ph2
4
0
5
0
TM41
Ph1
6
0
7
0
0
Therm1
Therm2
DC-1
G14
8
0
3
9
2
15,65
28,9
28,9
25,9
28,9
28,9
25,9
28,9
28,9
25,9
9,35
11,4
15,65
9,35
11,4
15,65
9,35
11,4
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
6,35
9,35
7,85
24,9
27,9
26,4
43,55
46,55
45,05
52,75
45,4
39,2
34,1
26,75
20,55
15,55
8,2
G13
S1
G24
G23
S2
G34
G33
S3
DC+3
GND3
DC-3
DC+2
GND2
DC-2
DC+1
GND1
Copyright Vincotech
33
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Pinout
Identification
Component
Voltage
Current
Function
Comment
ID
T13, T23, T33
T14, T24, T34
D13, D23, D33
D14, D24, D34
D43, D53, D63
D44, D54, D64
IGBT
IGBT
650 V
650 V
650 V
650 V
1600 V
1600 V
50 A
50 A
20 A
20 A
20 A
31 A
Negative Neutral Point Switch
Positive Neutral Point Switch
Negative Boost Diode
FWD
FWD
Positive Boost Diode
Rectifier
Rectifier
Negative Neutral Point Diode
Positive Neutral Point Diode
Positive Boost Diode Protection
Diode
D42, D52, D62
FWD
650 V
1600 V
500 V
10 A
20 A
D41, D51, D61
C11, C12, C21, C22,
C31, C32
Rectifier
Positive Boost Blocking Diode
Capacitor
Thermistor
Capacitor (DC)
Thermistor
Rt
Copyright Vincotech
34
03 Apr. 2020 / Revision 1
10-PY073AA050RG02-LK14L03Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY073AA050RG02-LK14L03Y-D1-14
3 Apr. 2020
Initial release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
35
03 Apr. 2020 / Revision 1
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