10-PY07NMA150S5-M824F58Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-PY07NMA150S5-M824F58Y |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总17页 (文件大小：1767K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07NMA150S5-M824F58
10-PY07NMA150S5-M824F58Y
datasheet
650 V / 150 A
flow MNPC 1
Features
flow 1 12 mm housing
● Special for 110V AC
● 4 quadrant operation
withsolderpins
withPress‐fitpins
Schematic
Target applications
● Solar Inverters
Types
● 10-FY07NMA150S5-M824F58
● 10-PY07NMA150S5-M824F58Y
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck/Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
104
450
145
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
A
ꢀ
Tj = Tjmax
W
V
Maximum junction temperature
°C
Copyright Vincotech
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24 Sept. 2018 / Revision 2
10-FY07NMA150S5-M824F58
10-PY07NMA150S5-M824F58Y
datasheet
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck/Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
101
300
127
175
V
A
ꢀ
ꢀ
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum Junction Temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
V
Visol
Isolation voltage
tp = 1 min
with press-fit pins
min. 12,7
min. 12,7
7,2
mm
mm
mm
mm
Creepage distance
Clearance
with solder pins
with press-fit pins
with solder pins
7,48
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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10-PY07NMA150S5-M824F58Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Buck/Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0015 25
25
3,2
4
4,8
V
V
1,43
1,52
1,55
1,75
VCEsat
Collector-emitter saturation voltage
15
150
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
100
200
µA
nA
Ω
20
none
9000
260
34
Cies
Coes
Cres
Qg
Output capacitance
fꢀ= 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
150
328
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j‐s)
Thermal resistance junction to sink
0,65
K/W
Dynamic
25
160
158
158
61
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
61
63
132
137
145
29
Rgoff = 8 Ω
Rgon = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
150
152
tf
30
37
0,741
0,767
0,948
0,898
1,368
1,512
Qr
FWD
Qr
FWD
Qr
FWD
= 3,8 μC
= 7,7 μC
= 9 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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10-PY07NMA150S5-M824F58Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Buck/Boost Diode
Static
25
1,56
1,50
1,48
1,92
7,6
VF
Ir
125
150
Forward voltage
150
V
Reverse leakage current
650
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j‐s)
Thermal resistance junction to sink
0,75
K/W
Dynamic
25
47
78
83
IRRM
125
150
25
Peak recovery current
A
132
trr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
182
210
ns
di/dt = 1547 A/μs
di/dt = 2604 A/μs
di/dt = 2356 A/μs
3,768
7,658
9,015
0,390
0,833
0,992
439
Qr
±15
150
152
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
ꢀ
710
724
Thermistor
R
Rated resistance
25
100
25
25
25
25
22
kΩ
%
ΔR/R
ꢀ
Deviation of R100ꢀ
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
P
5
mW
mW/K
K
1,5
B(25/50)
ꢀ
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
ꢀ
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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10-PY07NMA150S5-M824F58Y
datasheet
Buck/Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
)
VCE
= f(
)
VCE
IC
IC
VGEꢀ
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
=
V
:
Tj
VGE
from
7 V to 17 V in steps of 1 V
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j‐s) = f(tp)
100
I
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
=
100
10
μs
25 °C
125 °C
150 °C
=
D
tp
tpꢀ/ꢀT
=
V
:
Tj
=
R th(j‐s)
0,65
K/W
VCE
IGBT thermal model values
(K/W)
R
τ
(s)
1,13E-01
2,91E-01
1,38E-01
6,68E-02
1,32E-02
3,21E-02
8,46E-01
1,23E-01
3,33E-02
8,32E-03
2,63E-03
3,23E-04
Copyright Vincotech
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10-PY07NMA150S5-M824F58Y
datasheet
Buck/Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(QG)
IC = f(VCE
)
I
V
A
=
single pulse
80 ºC
D
IC=
150
Ts
=
=
±15
V
VGE
Tjꢀ=
Tjmax
ºC
Copyright Vincotech
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10-PY07NMA150S5-M824F58Y
datasheet
Buck/Boost Diode Characteristics
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
)
= f( )
tp
IF
VF
Z th(j‐s)
100
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,75
T j:
R th(j‐s)
K/W
FWD thermal model values
(K/W)
R
τ
(s)
2,88E-02
7,02E-02
1,95E-01
2,65E-01
1,21E-01
3,39E-02
7,46E+00
1,27E+00
2,04E-01
6,33E-02
1,27E-02
3,05E-03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
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10-PY07NMA150S5-M824F58Y
datasheet
Boost/Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
Eꢀ=ꢀf(R g
)
Eꢀ=ꢀf(IC
)
ꢀ
ꢀ
ꢀ
ꢀ
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
ꢀ
VCE
=
=
=
150
±15
8
V
V
Ω
Ω
T
j
125 °C
150 °C
VCE
=
=
150
±15
152
V
V
A
Tj:
VGEꢀ
VGEꢀ
R gonꢀ
ICꢀ=
R goffꢀ=
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erecꢀ=ꢀf(Ic)
Erecꢀ=ꢀf(R g)
ꢀ
ꢀ
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
Tj
VCE
=
=
=
150
±15
8
V
V
Ω
Tj:
VCEꢀ
VGEꢀ
ICꢀ
=
=
=
150
±15
152
V
V
A
VGEꢀ
R gonꢀ
Copyright Vincotech
8
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10-PY07NMA150S5-M824F58Y
datasheet
Boost/Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
tꢀ=ꢀf(IC
)
tꢀ=ꢀf(R g)
ꢀ
ꢀ
With an inductive load at
With an inductive load at
Tjꢀ=ꢀ
150
150
±15
8
°C
Tjꢀ=ꢀ
150
150
±15
152
°C
V
ꢀ
ꢀ
VCE
=
=
=
V
V
Ω
Ω
VCE
=
=
VGEꢀ
VGEꢀ
V
R gonꢀ
ICꢀ=
A
R goffꢀ=
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trrꢀ=ꢀf(IC
)
trrꢀ=ꢀf(R gon)
ꢀ
ꢀ
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
=
150
±15
8
V
V
Ω
25 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
150
V
V
A
25 °C
125 °C
150 °C
:
125 °C
150 °C
±15
152
:
Tj
VGEꢀ=
VGEꢀ
ICꢀ
=
Tj
R gonꢀ=
=
Copyright Vincotech
9
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10-PY07NMA150S5-M824F58Y
datasheet
Boost/Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Qrꢀ=ꢀf(IC
)
Qrꢀ=ꢀf(R gon)
Q
Q
150
25 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
V
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
GEꢀ=
IC=
=
150
±15
152
V
V
A
25 °C
125 °C
150 °C
±15
8
V
:
125 °C
150 °C
V
:
Tj
VGEꢀ
=
Tj
R gonꢀ
=
Ω
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRMꢀ=ꢀf(IC
)
IRMꢀ=ꢀf(R gon)
I
I
150
25 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
V
V
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
VGEꢀ=
ICꢀ=
=
150
±15
152
V
V
A
25 °C
125 °C
150 °C
:
125 °C
150 °C
:
Tj
VGEꢀ
=
±15
8
Tj
R gonꢀ=
Ω
Copyright Vincotech
10
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10-FY07NMA150S5-M824F58
10-PY07NMA150S5-M824F58Y
datasheet
Boost/Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,ꢀdi rr/dtꢀ=ꢀf(IC
)
di F/dt,ꢀdi rr/dtꢀ=ꢀf(R gon)
diF/dt
dirr/dt
diF/dt
dirr/dt
ꢀ
i
t
i
25 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
150
±15
8
V
V
Ω
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
GEꢀ=
IC
=
150
±15
152
V
V
A
25 °C
125 °C
150 °C
:
125 °C
150 °C
:
Tj
VGEꢀ
=
V
Tj
R gonꢀ
=
=
figure 15.
IGBT
Reverse bias safe operating area
ICꢀ=ꢀf(VCE
)
ICꢀMAX
I
I
I
V
At
Tjꢀ=
175
°C
Ω
R gonꢀ=
R goffꢀ=
8
8
Ω
Copyright Vincotech
11
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datasheet
Boost/Buck Switching Definitions
General conditions
=
=
=
T jꢀ
Rgonꢀ
125 °C
8 Ω
Rgoffꢀ
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
VCE
tdoff
VGE
VGE
IC
tEoff
VCE
tEon
-15
-15
VGEꢀ(0%)ꢀ=
VGEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
tdoffꢀ=
V
VGEꢀ(0%)ꢀ=
VGEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
tdonꢀ=
V
15
V
15
V
150
V
150
V
152
A
152
A
0,137
0,245
μs
μs
0,158
0,309
μs
μs
tEoffꢀ=
tEonꢀ
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
IC
tr
VCE
tf
150
V
150
V
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
152
A
152
A
0,030
μs
0,061
μs
tfꢀ=
trꢀ=
Copyright Vincotech
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datasheet
Boost/Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eon
Eoff
Poff
Pon
tEoff
tEon
Poffꢀ(100%)ꢀ=
Eoffꢀ(100%)ꢀ=
22,76
1,37
0,25
kW
Ponꢀ(100%)ꢀ=
Eonꢀ(100%)ꢀ=
22,76
0,77
0,31
kW
mJ
μs
mJ
tEoffꢀ=
μs
tEonꢀ=
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VFꢀ(100%)ꢀ=
IFꢀ(100%)ꢀ=
IRRMꢀ(100%)ꢀ=
trrꢀ=
150
V
152
A
-78
A
0,182
μs
Copyright Vincotech
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datasheet
Boost/Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Erec
tErec
Prec
IFꢀ(100%)ꢀ=
Qrꢀ(100%)ꢀ=
152
A
Precꢀ(100%)ꢀ=
Erecꢀ(100%)ꢀ=
tErecꢀ=
22,76
0,83
0,36
kW
mJ
μs
7,66
0,36
μC
μs
tQrꢀ
=
Copyright Vincotech
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datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with Press-fit pins
Ordering Code
10-FY07NMA150S5-M824F58
10-FY07NMA150S5-M824F58-/3/
10-PY07NMA150S5-M824F58Y
10-PY07NMA150S5-M824F58Y-/3/
Name
Date code
UL & VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table
Pin
1
X
Y
2,95
0
Function
G12
34,8
34,8
32,3
29,8
27,3
24,8
15,45
15,45
0
2
S12
DC-
DC-
DC-
DC-
GND
GND
G13
S13
3
0
4
0
5
0
6
0
7
2,95
0
8
9
0
10
0
2,95
11
12
13
0
0
0
8,45
11,45
26,05
Therm2
Therm1
S14
14
15
16
17
18
19
20
21
22
0
29
26,05
29
G14
GND
GND
DC+
DC+
DC+
DC+
G11
S11
18,7
18,7
28,1
30,6
33,1
35,6
40,1
40,1
29
29
29
29
18,9
15,95
23
24
25
26
27
28
29
30
31
32
50,3
53
16,3
16,55
13,8
13,55
9,2
Ph
Ph
Ph
Ph
Ph
Ph
Ph
Ph
50,3
53
50,5
53
9,2
50,5
53
6,2
6,2
Not assembled
Not assembled
Copyright Vincotech
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24 Sept. 2018 / Revision 2
10-FY07NMA150S5-M824F58
10-PY07NMA150S5-M824F58Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12
IGBT
650 V
150 A
150 A
150 A
150 A
Buck Switch
Buck Diode
Boost Switch
Boost Diode
Thermistor
D11 , D12
T13 , T14
D13 , D14
Rt
FWD
IGBT
FWD
NTC
650 V
650 V
650 V
Copyright Vincotech
16
24 Sept. 2018 / Revision 2
10-FY07NMA150S5-M824F58
10-PY07NMA150S5-M824F58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07NMA150S5-M824F58x-D2-14
24 Sept. 2018
Press-fit version added
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
24 Sept. 2018 / Revision 2
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