10-PY126PA016ME-L227F13Y [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;型号: | 10-PY126PA016ME-L227F13Y |
厂家: | VINCOTECH |
描述: | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
文件: | 总17页 (文件大小:7513K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-PY126PA016ME-L227F13Y
datasheet
flowPACK 1 SiC
1200 V / 16 mΩ
Features
flow 1 12 mm housing
● Sixpack configuration with open emitter
● Compact and low inductive design
● High frequency SiC MOSFET
● Integrated NTC
Schematic
Target applications
● Charging Stations
● Power Supply
● Welding & Cutting
Types
● 10-PY126PA016ME-L227F13Y
Copyright Vincotech
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30 Nov. 2021 / Revision 3
10-PY126PA016ME-L227F13Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VDSS
Drain-source voltage
1200
74
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
240
A
Ptot
Total power dissipation
130
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
11,83
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inverter Switch
Static
25
11,2
1,8
17
21
23
20,8(1)
rDS(on)
Drain-source on-state resistance
15
80
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,023
25
25
25
2,5
20
3,6
500
38
V
15
0
0
nA
µA
Ω
1200
2
0,85
236
6714
258
16
Qg
Gate charge
-4/15
800
80
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
pF
V
40
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,73
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
21,12
20,32
20,64
6,24
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
td(off)
tf
Rise time
125
150
25
6,08
6,24
Rgon = 2 Ω
Rgoff = 2 Ω
39,68
42,4
Turn-off delay time
125
150
25
ns
42,88
8,06
Fall time
125
150
25
7,83
ns
8,58
QrFWD=0,809 µC
QrFWD=1,48 µC
QrFWD=1,63 µC
0,152
0,161
0,184
0,178
0,187
0,195
129,01
185,86
198,45
14,1
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
mWs
mWs
A
Eoff
-4/15
600
65
125
150
25
IRRM
125
150
25
trr
125
150
25
16,91
18,13
0,809
1,48
ns
di/dt=15578 A/µs
di/dt=16593 A/µs
di/dt=16559 A/µs
Qr
125
150
25
μC
1,63
0,558
1,05
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,65
25921
42635
41962
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
250
250
200
150
100
50
VGS
:
-20 V
-18 V
-16 V
-14 V
-12 V
-10 V
-8 V
-6 V
-4 V
-2 V
0 V
200
150
100
50
0
2 V
4 V
-50
6 V
8 V
-100
-150
-200
-250
10 V
12 V
14 V
16 V
18 V
20 V
0
0
1
2
3
4
5
6
7
8
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -20 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,729
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
3,61E-02
1,11E-01
3,61E-01
1,61E-01
5,95E-02
4,04E+00
6,41E-01
9,20E-02
1,58E-02
1,96E-03
Copyright Vincotech
6
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datasheet
Inverter Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
14
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 6.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 7.
MOSFET
figure 8.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-4/15
65
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 9.
MOSFET
figure 10.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
2
V
V
Ω
125 °C
150 °C
600
-4/15
65
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
9
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datasheet
Inverter Switching Characteristics
figure 11.
MOSFET
figure 12.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
-1
10
-2
10
-3
10
td(off)
10
td(on)
-1
-2
-3
10
10
10
tf
tr
td(off)
td(on)
tr
tf
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-4/15
2
°C
V
150
600
-4/15
65
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
V
Ω
Ω
A
2
figure 13.
MOSFET
figure 14.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgoff(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
V
V
Ω
At
600
-4/15
65
V
25 °C
25 °C
VGS
VGS
ID
-4/15
2
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
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10-PY126PA016ME-L227F13Y
datasheet
Inverter Switching Characteristics
figure 15.
MOSFET
figure 16.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
2
V
V
Ω
At
600
V
V
A
25 °C
25 °C
125 °C
150 °C
-4/15
65
125 °C
150 °C
Tj:
Tj:
Rgon
figure 17.
MOSFET
figure 18.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
250
200
150
100
50
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-4/15
2
125 °C
150 °C
-4/15
65
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 19.
MOSFET
figure 20.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
60000
70000
60000
50000
40000
30000
20000
10000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
50000
40000
30000
20000
10000
0
0
25
50
75
100
125
150
ID(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-4/15
65
V
25 °C
25 °C
-4/15
2
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 21.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
175
ID MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
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datasheet
Inverter Switching Definitions
figure 22.
MOSFET
figure 23.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 24.
MOSFET
figure 25.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
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datasheet
Inverter Switching Definitions
figure 26.
FWD
figure 27.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 28.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PY126PA016ME-L227F13Y
10-PY126PA016ME-L227F13Y-/7/
10-PY126PA016ME-L227F13Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
2,7
0
Function
DC-3
DC-3
G15
52,2
52,2
45,5
42,5
41,2
38,5
33,1
30,4
25
2
3
12
4
13
S15
5
0
DC+3
DC+3
DC+2
DC+2
G13
6
0
7
0
8
0
9
10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
22
11
S13
19,4
16,7
13,7
11
0
DC-2
DC-2
DC-1
DC-1
G11
0
0
0
8,7
12
5,7
13
S11
0
0
DC+1
DC+1
THERM2
THERM1
PH1
0
2,7
15,6
12,6
28,2
28,2
26,7
25,7
28,2
28,2
25,2
24,2
28,2
28,2
26,7
25,7
14,3
16,1
0
2,7
PH1
5,7
S12
8,7
G12
19,4
22,1
23,1
26,1
36,3
39
PH2
PH2
S14
G14
PH3
PH3
42
S16
45
G16
Copyright Vincotech
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datasheet
Pinout
17,18
DC+1
7,8
DC+2
5,6
DC+3
T12
T14
T16
G12
24
G14
28
G16
32
S12
23
S14
27
S16
31
PH1 21,22
PH2 25,26
PH3 29,30
T11
T13
T15
G11
15
G13
9
G15
3
NTC
S11
16
S13
10
S15
4
DC-1
13,14
DC-2
11,12
DC-3
1,2
THERM1
20
THERM2
19
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
T15, T16
MOSFET
NTC
1200 V
16 mΩ
Inverter Switch
Thermistor
NTC
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Dynamic characteristics are updated
New datasheet format, module is unchanged
10-PY126PA016ME-L227F13Y-D3-14
30 Nov. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
30 Nov. 2021 / Revision 3
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