10-PY12NMA160SH10-M820F08Y [VINCOTECH]
5us short circuit withstand time;High speed switching;Minimized tail current;型号: | 10-PY12NMA160SH10-M820F08Y |
厂家: | VINCOTECH |
描述: | 5us short circuit withstand time;High speed switching;Minimized tail current |
文件: | 总28页 (文件大小:8488K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-PY12NMA160SH10-M820F08Y
datasheet
flowMNPC 1
1200 V / 160 A
Topology features
flow 1 12 mm housing
● Kelvin Emitter for improved switching performance
● Mixed Voltage Neutral Point Clamped Topology (T-Type)
● Temperature sensor
Component features
● 5us short circuit withstand time
● High speed switching
● Minimized tail current
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Energy Storage Systems
● Solar Inverters
● UPS
Types
● 10-PY12NMA160SH10-M820F08Y
Copyright Vincotech
1
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
128
480
302
±20
5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 600 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
650
102
660
127
175
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
Single Half Sine Wave,
tp = 10 ms
IFSM
A
Ptot
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
Collector-emitter voltage
650
90
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
450
137
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
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27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
61
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
Single Half Sine Wave,
tp = 10 ms
IFSM
360
97
A
Ptot
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
7,88
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,008
160
25
5
6
7
V
V
25
2,23
2,45
2,5
2,6(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
20
20
0
25
25
100
µA
nA
Ω
0
1000
None
12800
880
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
320
VCC = 960 V
0/15
160
632
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,31
K/W
Rth(j-s)
25
61,26
58,39
57,61
25,32
27,43
28,21
162,65
178,03
183,02
28,11
54,04
60,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
100
tf
125
150
25
ns
QrFWD=2,92 µC
QrFWD=7,47 µC
QrFWD=9,02 µC
1,5
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
2,3
mWs
mWs
2,58
2,32
Eoff
125
150
3,66
4,19
Copyright Vincotech
4
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,73
1,51
1,45
2,65(1)
VF
IR
Forward voltage
150
125
150
25
V
2,05(1)
40
Reverse leakage current
Thermal
Vr = 650 V
µA
150
160
1600
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,75
K/W
Rth(j-s)
25
71,93
96,5
IRM
Peak recovery current
125
150
25
A
102,43
119,83
209,08
238,21
2,92
trr
Reverse recovery time
125
150
25
ns
di/dt=4569 A/µs
di/dt=4119 A/µs
di/dt=3793 A/µs
Qr
Recovered charge
-5/15
350
100
125
150
25
7,47
μC
9,02
0,571
1,49
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,81
3030,48
1861,89
1673,42
(dirf/dt)max
125
150
Copyright Vincotech
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27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,002
150
25
5
6
7
V
V
25
1,55
1,7
2(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,74
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
-500
500
None
8714
528
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
234
VCC = 520 V
0/15
150
414
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,7
K/W
Rth(j-s)
25
46,08
45,5
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
45,4
16,85
17,88
17,82
152,24
166,27
170,15
24,42
48,98
54,3
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
100
tf
125
150
25
ns
QrFWD=3,25 µC
QrFWD=7,28 µC
QrFWD=8,56 µC
0,378
0,621
0,694
1,26
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
1,94
2,13
Copyright Vincotech
6
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,49
2,02
1,91
3,8(1)
VF
IR
Forward voltage
80
125
150
25
V
2,65(1)
40
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
160
1600
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,98
K/W
Rth(j-s)
25
141,04
166,68
173,81
41,71
139,73
163,15
3,25
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=7098 A/µs
di/dt=7095 A/µs
di/dt=6510 A/µs
Qr
Recovered charge
-5/15
350
100
125
150
25
7,28
μC
8,56
1,04
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,13
mWs
A/µs
2,48
9861,78
6875,9
6516,43
(dirf/dt)max
125
150
Copyright Vincotech
7
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
100
nF
%
Tolerance
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
500
500
VGE
:
7 V
8 V
9 V
400
300
200
100
0
400
300
200
100
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
60
μs
V
D =
tp / T
0,315
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,94E-03
7,29E-02
1,59E-01
5,87E-02
1,71E-02
1,75E+01
1,39E+00
1,87E-01
3,74E-02
2,70E-03
Copyright Vincotech
9
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
100µs
1ms
10ms
1
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
100
200
300
400
500
600
700
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
40
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Buck Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,746
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,69E-02
9,76E-02
4,48E-01
8,77E-02
5,60E-02
2,19E+00
4,58E-01
1,05E-01
1,24E-02
1,58E-03
Copyright Vincotech
11
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Boost Switch Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 11.
IGBT
figure 12.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
14
μs
V
D =
tp / T
0,696
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,31E-02
9,38E-02
4,16E-01
8,74E-02
3,56E-02
2,13E+00
4,03E-01
9,07E-02
1,08E-02
1,16E-03
Copyright Vincotech
12
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Boost Switch Characteristics
figure 13.
IGBT
figure 14.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
50
100
150
200
250
300
350
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
40
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,976
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,46E-02
1,18E-01
6,30E-01
1,10E-01
5,35E-02
2,00E+00
3,70E-01
1,00E-01
8,80E-03
8,84E-04
Copyright Vincotech
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27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Buck Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eoff
Eon
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eon
Eon
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
16
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
td(on)
td(on)
tf
tr
-1
10
tr
tf
-2
10
10
-3
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
4
°C
V
150
350
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
-5/15
100
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Buck Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
15,0
12,5
10,0
7,5
12
10
8
Qr
Qr
Qr
Qr
6
5,0
4
Qr
Qr
2,5
2
0,0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
125
100
75
50
25
0
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
IRM
25
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
6000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
19
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Boost Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eon
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
-1
10
tf
td(on)
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
4
°C
V
150
350
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
-5/15
100
Ω
Ω
4
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Boost Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
5,0
Qr
Qr
2,5
2,5
0,0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
125 °C
150 °C
350
-5/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
23
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PY12NMA160SH10-M820F08Y
10-PY12NMA160SH10-M820F08Y-/7/
10-PY12NMA160SH10-M820F08Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
2,95
0
Function
G12
34,8
34,8
32,3
29,8
27,3
24,8
15,45
15,45
0
2
S12
3
0
DC-
4
0
DC-
5
0
DC-
6
0
DC-
7
2,95
0
GND2
GND2
G13
8
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
2,95
8,45
11,45
26,05
29
S13
0
Therm2
Therm1
S14
0
0
0
G14
18,7
18,7
28,1
30,6
33,1
35,6
40,1
40,1
50,3
53
26,05
29
GND1
GND1
DC+
DC+
DC+
DC+
G11
29
29
29
29
18,9
15,95
16,3
16,55
13,8
13,55
9,2
9,2
6,2
6,2
S11
Ph1
Ph1
50,3
53
Ph1
Ph1
50,5
53
Ph2
Ph2
50,5
53
Ph2
Ph2
Copyright Vincotech
26
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Pinout
DC+
17-20
T11
D13
C20
G11
21
S11
22
D11
Ph1
GND1
15-16
23-26
T14
D12
S13 G13
9
10
14
13
G14 S14
T13
Ph2
GND2
7-8
27-30
T12
C10
D14
G12
1
S12
2
Rt
DC-
3-6
12
Therm1
11
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
T13, T14
D13, D14
C10, C20
Rt
IGBT
FWD
1200 V
650 V
650 V
1200 V
630 V
160 A
150 A
150 A
80 A
Buck Switch
Buck Diode
IGBT
Boost Switch
Boost Diode
Capacitor (DC)
Thermistor
FWD
Capacitor
Thermistor
Copyright Vincotech
27
27 Apr. 2023 / Revision 1
10-PY12NMA160SH10-M820F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY12NMA160SH10-M820F08Y-D1-14
27 Apr. 2023
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
27 Apr. 2023 / Revision 1
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