10-PZ122PB100SC03-M819F18Y [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-PZ122PB100SC03-M819F18Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总18页 (文件大小：6697K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PZ122PB100SC03-M819F18Y
datasheet
flowPHASE 0 + NTC
1200 V / 100 A
Topology features
flow 0 12 mm housing
● Half Bridge
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
Housing features
● Base isolation: AlN
● Clip-in, reliable mechanical connection, qualified for wave
soldering
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Industrial Drives
● Power Supply
● Solar Inverters
● UPS
● Welding & Cutting
Types
● 10-PZ122PB100SC03-M819F18Y
Copyright Vincotech
1
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Half-Bridge Switch
VCES
Collector-emitter voltage
1200
117
300
268
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Half-Bridge Diode
VRRM
Peak repetitive reverse voltage
1200
99
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
172
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,08
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
2
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0038
100
25
5,1
5,8
6,4
V
V
25
1,53
1,72
1,97
2,01
1,97(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1,3
µA
nA
Ω
20
120
7,5
6300
270
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
800
Thermal
λfoil=220 W/mK
(KU-ALF5)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,35
K/W
Dynamic
25
170,6
183,8
32,8
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
37
Rgon = 4 Ω
Rgoff = 4 Ω
292,8
365
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
600
100
59,82
121,28
6,9
tf
ns
125
25
QrFWD=9,06 µC
QrFWD=16,84 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
10,14
6,26
125
9,37
Copyright Vincotech
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03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Diode
Static
25
1,35
1,77
1,75
1,73
2,05(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Vr = 1200 V
25
18
µA
Thermal
λfoil=220 W/mK
(KU-ALF5)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,55
K/W
25
103,62
119,41
247,41
391,68
9,06
IRRM
Peak recovery current
A
125
25
trr
Reverse recovery time
Recovered charge
ns
125
25
di/dt=3987 A/µs
di/dt=3060 A/µs
Qr
±15
600
100
μC
125
25
16,84
3,24
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
6,3
3017
(dirf/dt)max
125
1630
Copyright Vincotech
4
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
250
VGE
:
7 V
8 V
250
200
150
100
50
9 V
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,354
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,18E-02
1,49E-01
8,74E-02
1,88E-02
1,69E-02
1,14E+00
1,50E-01
5,52E-02
5,39E-03
8,48E-04
Copyright Vincotech
6
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,553
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,57E-02
7,05E-02
1,67E-01
1,68E-01
4,43E-02
3,16E-02
3,63E-02
4,03E+00
8,06E-01
1,44E-01
5,25E-02
9,00E-03
1,49E-03
2,78E-04
Copyright Vincotech
8
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
25
20
15
10
5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eoff
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
600
±15
100
V
125 °C
V
A
Rgon
Rgoff
4
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
10
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
600
±15
4
°C
V
125
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
11
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
30
25
20
15
10
5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
12
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
6000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
V
A
125 °C
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
13
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
14
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Half-Bridge Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
15
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-PZ122PB100SC03-M819F18Y
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC-
DC-
DC-
DC-
DC+
DC+
DC+
DC+
G12
S12
Ph
0
0
0
2
2,3
3
0
4,6
4
0
6,9
5
0
15,6
17,9
20,2
22,5
16,45
16,45
11,5
9,2
6
0
7
0
8
0
9
13,85
16,75
33,5
33,5
33,5
33,5
33,5
33,5
13,85
19,55
19,55
33,5
26,1
10
11
12
13
14
15
16
17
18
19
20
21
Ph
6,9
Ph
4,6
Ph
2,3
Ph
0
Ph
13,55
4,95
7,85
22,5
22,5
Ph
S11
G11
Therm1
Therm2
Copyright Vincotech
16
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Pinout
DC+
5,6,7,8
T12
D11
G12
9
S12
10
Ph
11,12,13,14,15,16,17
T11
D12
G11
19
Rt
S11
18
1,2,3,4
DC-
20
Therm1
21
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
Rt
IGBT
FWD
1200 V
1200 V
100 A
100 A
Half-Bridge Switch
Half-Bridge Diode
Thermistor
Thermistor
Copyright Vincotech
17
03 May. 2022 / Revision 2
10-PZ122PB100SC03-M819F18Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PZ122PB100SC03-M819F18Y-D2-14
3 May. 2022
New Datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
03 May. 2022 / Revision 2
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