10-PZ124PA032ME03-L629F98Y [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-PZ124PA032ME03-L629F98Y |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总17页 (文件大小：6922K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PZ124PA032ME03-L629F98Y
datasheet
fastPACK 0 SiC
1200 V / 32 mΩ
Features
flow 0 12 mm housing
● Compact and low inductive design
● High frequency SiC MOSFET
● High power low inductive package
● Integrated DC-capacitor
● Integrated NTC
Schematic
Target applications
● Charging Stations
● Power Supply
Types
● 10-PZ124PA032ME03-L629F98Y
Copyright Vincotech
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04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Switch
VDSS
Drain-source voltage
1200
37
V
A
ID
Drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
Peak drain current
Total power dissipation
tp limited by Tjmax
Tj = Tjmax
120
A
Ptot
70
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Capacitor (DC)
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
0 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
9,15
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
H-Bridge Switch
Static
25
22,4
1,8
34
42
47
41,6(1)
rDS(on)
Drain-source on-state resistance
15
40
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,0115
25
25
25
2,5
10
3,6
250
19
V
15
0
0
nA
µA
Ω
1200
1
1,7
118
3357
129
8
Qg
Gate charge
-4/15
800
40
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
pF
V
20
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,36
K/W
Copyright Vincotech
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04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
17,8
16,6
td(on)
Turn-on delay time
125
150
25
ns
ns
16,8
6
tr
td(off)
tf
Rise time
125
150
25
5,8
5,4
Rgon = 4 Ω
Rgoff = 4 Ω
42,6
Turn-off delay time
125
150
25
46,6
ns
48
19,42
18,65
20,84
0,252
0,239
0,248
0,074
0,077
0,077
44,11
49,88
54,84
14,4
Fall time
125
150
25
ns
QrFWD=0,325 µC
QrFWD=0,344 µC
QrFWD=0,401 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
mWs
mWs
A
Eoff
-4/15
600
32
125
150
25
IRRM
125
150
25
trr
125
150
25
14,05
14,61
0,325
0,344
0,401
0,169
0,209
0,256
7693
9638
10602
ns
di/dt=6518 A/µs
di/dt=6912 A/µs
di/dt=7217 A/µs
Qr
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
2,2
1,5
nF
%
%
Tolerance
-5
5
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
125
100
VGS
:
-20 V
-18 V
-16 V
-14 V
-12 V
-10 V
-8 V
-6 V
-4 V
-2 V
0 V
100
75
50
25
0
50
0
2 V
4 V
-50
-100
-150
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
1
2
3
4
5
6
7
8
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -20 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,362
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
7,53E-02
2,27E-01
7,32E-01
2,40E-01
8,78E-02
2,27E+00
2,80E-01
6,31E-02
7,73E-03
7,83E-04
Copyright Vincotech
6
04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
14
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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04 Sep. 2020 / Revision 1
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datasheet
Thermistor Characteristics
figure 6.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switching Characteristics
figure 7.
MOSFET
figure 8.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
4
V
125 °C
150 °C
600
-4/15
32
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
4
figure 9.
MOSFET
figure 10.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
4
V
125 °C
150 °C
600
-4/15
32
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Ω
Copyright Vincotech
9
04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switching Characteristics
figure 11.
MOSFET
figure 12.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
tf
td(on)
tf
tr
-2
10
-2
10
tr
-3
10
-3
10
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-4/15
4
°C
150
600
-4/15
32
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
Ω
Ω
V
V
A
VGS
Rgon
Rgoff
VGS
ID
4
figure 13.
MOSFET
figure 14.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-4/15
32
V
25 °C
25 °C
-4/15
4
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
10
04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switching Characteristics
figure 15.
MOSFET
figure 16.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
4
V
At
600
-4/15
32
V
25 °C
25 °C
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 17.
MOSFET
figure 18.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
100
80
60
40
20
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
4
V
V
At
600
-4/15
32
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
Copyright Vincotech
11
04 Sep. 2020 / Revision 1
10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switching Characteristics
figure 19.
MOSFET
figure 20.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
20000
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
dirr/dt ──────
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
25 °C
-4/15
4
125 °C
150 °C
-4/15
32
125 °C
150 °C
Tj:
Tj:
Rgon
figure 21.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
90
ID MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
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04 Sep. 2020 / Revision 1
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datasheet
H-Bridge Switching Definitions
figure 22.
MOSFET
figure 23.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 24.
MOSFET
figure 25.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
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04 Sep. 2020 / Revision 1
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datasheet
H-Bridge Switching Definitions
figure 26.
FWD
figure 27.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 28.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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04 Sep. 2020 / Revision 1
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datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PZ124PA032ME03-L629F98Y
10-PZ124PA032ME03-L629F98Y-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G11
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
7,2
4,7
0
2
2,9
S11
3
8,3
DC-1
DC-1
DC+1
DC+1
S12
4
10,8
19,6
22,1
29,1
32
5
6
7
8
G12
9
33,5
33,5
33,5
33,5
32
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
Ph1
Ph2
Ph2
G14
29,1
22,1
19,6
10,8
8,3
0
S14
0
DC+2
DC+2
DC-2
DC-2
S13
0
0
0
2,9
0
0
0
G13
0
8
Therm1
Therm2
0
14,5
Copyright Vincotech
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datasheet
Pinout
DC+1
5,6
DC+2
15,16
T12
T14
G12
S12
G14
8
7
13
14
S14
Ph1
Ph2
9,10
C10
11,12
C20
T11
T13
G11
S11
G13
S13
1
2
20
19
Rt
3,4
DC-1
17,18
Therm1
21
Therm2
22
DC-2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14
MOSFET
Capacitor
Thermistor
1200 V
1000 V
32 mΩ
H-Bridge Switch
Capacitor (DC)
Thermistor
C10, C20
Rt
Copyright Vincotech
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04 Sep. 2020 / Revision 1
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PZ124PA032ME03-L629F98Y-D1-14
4 Sep. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
04 Sep. 2020 / Revision 1
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