10-R0126PA008SC-M627F4 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 10-R0126PA008SC-M627F4 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总18页 (文件大小:7140K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-R0126PA008SC-M627F40
datasheet
flow90PACK 0
1200 V / 8 A
Topology features
flow90 0 housing
● Inverter
● Open Emitter configuration
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
Housing features
● Base isolation: Al2O3
● 90° mounting angle between heatsink and PCB
● Screw-on heatsink mounting
● Clip-in PCB mounting
Schematic
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Standard Drive
● Servo Drive
● Bookshelf Inverter
Types
● 10-R0126PA008SC-M627F40
04 May. 2022 / Revision 3
Copyright Vincotech
1
10-R0126PA008SC-M627F40
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
14
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
24
A
Ptot
51
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
20
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
49
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
10,93
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
04 May. 2022 / Revision 3
Copyright Vincotech
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10-R0126PA008SC-M627F40
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00015 25
25
5,3
5,8
6,3
V
V
1,58
1,91
2,14
2,22
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
8
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
1
µA
nA
Ω
20
25
25
120
None
490
30
Cies
Cres
pF
pF
f = 1 Mhz
0
25
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,85
K/W
25
55
54
td(on)
Turn-on delay time
ns
ns
150
25
22,6
tr
Rise time
150
25
24,4
Rgon = 32 Ω
Rgoff = 32 Ω
176,8
240,4
66,98
120,68
0,555
0,87
td(off)
Turn-off delay time
ns
150
25
±15
600
8
tf
Fall time
ns
150
25
QrFWD=0,852 µC
QrFWD=1,77 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
0,434
0,733
150
04 May. 2022 / Revision 3
Copyright Vincotech
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10-R0126PA008SC-M627F40
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,35
1,83
1,75
2,05(1)
2,7
VF
IR
Forward voltage
10
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,95
K/W
25
7,09
9,08
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
246,73
428,03
0,852
1,77
trr
ns
150
25
di/dt=362 A/µs
di/dt=293 A/µs
Qr
±15
600
8
μC
150
25
0,327
0,714
79,73
44,4
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
(dirf/dt)max
150
04 May. 2022 / Revision 3
Copyright Vincotech
4
10-R0126PA008SC-M627F40
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
4,7
kΩ
%
R100 = 426 Ω
100
-12
11
200
2
mW
mW/K
K
d
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3500
3560
B(25/100)
B-value
K
Vincotech Thermistor Reference
G
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
04 May. 2022 / Revision 3
Copyright Vincotech
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10-R0126PA008SC-M627F40
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
20
20
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
15
10
5
15
10
5
0
0
0
0
2
4
6
8
10
2
4
6
8
10
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
8
10
0
6
4
2
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
1,853
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,07E-01
3,06E-01
8,20E-01
2,99E-01
1,69E-01
1,52E-01
1,43E+00
1,62E-01
4,85E-02
1,03E-02
2,84E-03
4,86E-04
04 May. 2022 / Revision 3
Copyright Vincotech
6
10-R0126PA008SC-M627F40
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
04 May. 2022 / Revision 3
Copyright Vincotech
7
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,952
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
5,14E-02
1,26E-01
6,86E-01
5,26E-01
3,32E-01
2,31E-01
4,05E+00
5,34E-01
7,62E-02
1,70E-02
3,96E-03
7,27E-04
04 May. 2022 / Revision 3
Copyright Vincotech
8
10-R0126PA008SC-M627F40
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
15000
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
T(°C)
04 May. 2022 / Revision 3
Copyright Vincotech
9
10-R0126PA008SC-M627F40
datasheet
Inverter Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
Ω
150 °C
600
±15
8
V
V
A
150 °C
Rgon
Rgoff
32
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
04 May. 2022 / Revision 3
Copyright Vincotech
10
10-R0126PA008SC-M627F40
datasheet
Inverter Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
-1
10
td(off)
tf
tr
-1
10
td(on)
tr
-2
10
-2
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
32
°C
V
150
600
±15
8
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
R
gon(Ω)
25 °C
150 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
04 May. 2022 / Revision 3
Copyright Vincotech
11
10-R0126PA008SC-M627F40
datasheet
Inverter Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
10
20,0
17,5
15,0
12,5
10,0
7,5
IRM
IRM
8
6
4
IRM
IRM
5,0
2
2,5
0
0,0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
04 May. 2022 / Revision 3
Copyright Vincotech
12
10-R0126PA008SC-M627F40
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
400
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
350
300
250
200
150
100
50
dirr/dt ──────
0
0,0
0
2,5
5,0
7,5
10,0
12,5
15,0
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
150 °C
600
±15
8
V
V
A
150 °C
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
17,5
IC MAX
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
04 May. 2022 / Revision 3
Copyright Vincotech
13
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datasheet
Inverter Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
04 May. 2022 / Revision 3
Copyright Vincotech
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datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
04 May. 2022 / Revision 3
Copyright Vincotech
15
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datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-R0126PA008SC-M627F40
10-R0126PA008SC-M627F40-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
0
0
0
0
0
7
7
7
7
7
7
7
Function
+UB
GWL
E6
33,6
19,85
15,95
12,95
9,95
6,95
3,95
0
2
3
4
E5
5
GVL
NTC1
GUL
E4
6
7
8
9
0
U
10
11
12
13
14
15
3
GUH
NTC2
V
10
19,3
22,3
28,5
31,5
GVH
W
GWH
04 May. 2022 / Revision 3
Copyright Vincotech
16
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datasheet
Pinout
+UB
1
T1
T2
T3
D1
GVH
D2
D3
GUH
10
GWH
13
15
U
9
V
12
W
14
T4
T5
T6
D4
GVL
D5
D6
GUL
GWL
7
5
2
NTC
NTC1
6
NTC2
11
E4
8
E5
4
E6
3
Identification
Component
Voltage
Current
Function
Comment
ID
T4, T1, T5, T2, T6, T3
IGBT
1200 V
8 A
Inverter Switch
D1, D4, D2, D5, D3,
FWD
1200 V
10 A
Inverter Diode
Thermistor
D6
NTC
Thermistor
04 May. 2022 / Revision 3
Copyright Vincotech
17
10-R0126PA008SC-M627F40
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow90 0 packages see vincotech.com website.
Package data
Package data for flow90 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-R0126PA008SC-M627F40-D3-14
4 May. 2022
New Datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
04 May. 2022 / Revision 3
Copyright Vincotech
18
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