10-R0126PA015SC-M628F4 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-R0126PA015SC-M628F4 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总16页 (文件大小：2469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
flow90PACK 0
1200V/15A
Features
flow 90PACK 0
● 90°PCB mounting for easy heat sink assembly
● Clip-in PCB mounting (optional)
● Open emitter for easy current sensing
with clips
without clips
Schematic
Target Applications
● Standard Drive
● Servo Drive
● Bookshelf Inverter
Types
● 10-R0126PA015SC-M628F40
● 10-RZ126PA015SC-M628F41
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current *
VCE
IC
1200
V
A
Th=80°C
23
25
Tj=Tjmax
Tc=80°C
ICpulse
tp limited by Tjmax
Pulsed collector current
45
30
A
Turn off safe operating area
Power dissipation per IGBT *
Gate-emitter peak voltage
Short circuit ratings
VCE ≤ 1200V, Tj ≤ Top max
A
Th=80°C
Tc=80°C
69
Ptot
Tj=Tjmax
W
V
104
VGE
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
* measured with phase-change material
Inverter Diode
175
°C
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current *
1200
V
A
Th=80°C
Tc=80°C
23
30
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode *
30
A
Th=80°C
Tc=80°C
53
81
W
°C
Tjmax
Maximum Junction Temperature
175
* measured with phase-change material
Copyright by Vincotech
1
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Vis
t=2s
DC voltage
4000
min 12,7
min 10,93
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
Copyright by Vincotech
2
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,3
VGE(th) VCE=VGE
0,0005
15
V
V
1,5
1,93
2,23
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0,01
200
0
1200
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
86
85
34
Rise time
35
ns
202
272
70
124
1,18
1,76
0,81
1,39
td(off)
tf
Turn-off delay time
Rgoff=32 ꢀ
Rgon=32 ꢀ
±15
600
15
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
900
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
80
Reverse transfer capacitance
Gate charge
55
15
960
15
85
nC
Phase-Change
Material
RthJH
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,38
1,63
K/W
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,2
1,86
1,78
10
2,3
VF
IRRM
trr
Diode forward voltage
15
15
V
A
Peak reverse recovery current
Reverse recovery time
13
297
508
1,46
2,94
58
45
0,57
1,18
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=32 ꢀ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Phase-Change
Material
RthJH
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,78
2,09
K/W
K/W
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
R
∆R/R
P
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
4700
ꢀ
%
-5
5
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
3500
3560
B(25/100)
B-value
K
Vincotech NTC Reference
G
Copyright by Vincotech
3
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Typical output characteristics
Output inverter IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
50
50
40
30
20
10
40
30
20
10
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
tp =
tp =
250
25
ꢁs
250
150
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
Output inverter IGBT
Figure 4
Output inverter FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
15
60
50
40
30
20
10
12
9
6
Tj = Tjmax-25°C
3
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
2
4
6
8
10
12
0
1
2
3
4
VGE (V)
VF (V)
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
Copyright by Vincotech
4
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
5
4
3
2
1
0
5
4
3
2
1
0
Eon High T
Eon High T
Eon Low T
Eoff High T
Eon Low T
Eoff Low T
Eoff High T
Eoff Low T
0
5
10
15
20
25
30
0
25
50
75
100
125
150
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
32
V
V
ꢀ
ꢀ
600
±15
15
V
V
A
Rgon
Rgoff
=
=
32
Figure 7
Output inverter FWD
Figure 8
Output inverter FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
2,0
1,5
Tj = Tjmax -25°C
1,2
1,5
Erec
Erec
Tj = Tjmax -25°C
0,9
0,6
0,3
0,0
1,0
0,5
0,0
Tj = 25°C
Tj = 25°C
Erec
Erec
0
25
50
75
100
125
150
0
5
10
15
20
25
30
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
°C
V
V
A
=
=
=
=
±15
V
±15
Rgon
=
32
ꢀ
15
Copyright by Vincotech
5
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Output Inverter
Figure 9
Output inverter IGBT
Figure 10
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
0,10
0,01
0,00
1,00
0,10
0,01
0,00
tdoff
tdon
tdoff
tf
tf
tr
tdon
tr
0
25
50
75
100
125
150
0
5
10
15
20
25
30
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
32
°C
150
600
±15
15
°C
=
=
=
=
V
V
ꢀ
ꢀ
V
V
A
Rgon
Rgoff
=
=
32
Figure 11
Output inverter FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
trr = f(Rgon
)
0,8
0,6
0,4
0,2
0,0
0,8
Tj = Tjmax -25°C
trr
Tj = Tjmax -25°C
trr
0,6
0,4
0,2
Tj = 25°C
trr
Tj = 25°C
trr
0,0
0
0
5
10
15
20
25
30
25
50
75
100
125
150
I C (A)
R g on ( Ω )
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
25/150
600
°C
=
VR =
V
V
ꢀ
V
A
V
=
IF =
±15
15
Rgon
=
VGE =
32
±15
Copyright by Vincotech
6
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Output Inverter
Figure 13
Output inverter FWD
Figure 14
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
4
3
2
1
0
4
Tj = Tjmax -25°C
Qrr
Tj = Tjmax -25°C
3
2
1
Qrr
Tj = 25°C
Qrr
Tj = 25°C
Qrr
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
I C (A)
R g on ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
25/150
600
°C
=
=
VR =
V
V
ꢀ
V
A
V
IF =
±15
15
Rgon
=
VGE =
32
±15
Figure 15
Output inverter FWD
Figure 16
Output inverter FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
15
12
9
20
IRRM
Tj = Tjmax -25°C
IRRM
15
IRRM
Tj = Tjmax - 25°C
IRRM
Tj = 25°C
10
6
Tj = 25°C
5
3
0
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
R gon ( Ω )
I C (A)
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
V
25/150
600
°C
=
VR =
V
A
V
=
IF =
±15
V
15
Rgon
=
VGE =
32
ꢀ
±15
Copyright by Vincotech
7
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Output Inverter
Figure 17
Output inverter FWD
Figure 18
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
400
1500
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
1200
900
600
300
0
300
200
100
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
I C (A)
R gon ( Ω )
At
At
Tj =
VCE
VGE
Tj =
25/150
600
°C
V
25/150
600
°C
V
A
V
=
=
VR =
IF =
VGE
±15
V
15
Rgon
=
=
32
ꢀ
±15
Figure 19
Output inverter IGBT
Figure 20
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
1
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
tp / T
1,38
tp / T
1,78
D =
D =
RthJH
=
RthJH
=
RthJH
=
RthJH =
K/W
1,63
K/W
K/W
2,09
K/W
IGBT thermal model values
Thermal grease
FWD thermal model values
Thermal grease
Phase change interface
Phase change interface
R (C/W)
0,14
Tau (s)
7,1E-01
1,0E-01
3,6E-02
7,0E-03
9,2E-04
R (C/W)
0,16
Tau (s)
R (C/W)
0,07
Tau (s)
2,6E+00
3,9E-01
6,9E-02
1,7E-02
3,8E-03
6,4E-04
R (C/W)
0,08
Tau (s)
7,1E-01
1,0E-01
3,6E-02
7,0E-03
9,2E-04
2,6E+00
3,9E-01
6,9E-02
1,7E-02
3,8E-03
6,4E-04
0,55
0,65
0,12
0,15
0,40
0,47
0,72
0,84
0,19
0,22
0,45
0,53
0,10
0,12
0,24
0,29
0,18
0,21
Copyright by Vincotech
8
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Output Inverter
Figure 21
Output inverter IGBT
Figure 22
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
150
125
100
75
30
25
20
15
10
5
50
25
0
0
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
T h
(
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
Output inverter FWD
Figure 24
Forward current as a
Output inverter FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
100
75
50
25
0
35
30
25
20
15
10
5
0
o C)
T h (
o C)
0
50
100
150
200
T h
(
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
Copyright by Vincotech
9
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Output Inverter
Figure 25
Output inverter IGBT
Figure 26
Gate voltage vs Gate charge
Output inverter IGBT
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
17,5
)
102
240V
100uS
15
12,5
10
960V
1mS
101
DC
10mS
100mS
100
7,5
5
10-1
2,5
0
0
20
40
60
80
100
120
100
103
102
101
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
15
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
Figure 27
Output inverter IGBT
Figure 28
Output inverter IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
tsc = f(VGE
)
VGE = f(QGE
)
18
175
150
125
100
75
15
12
9
6
50
3
25
0
0
12
14
16
18
20
12
14
16
18
20
VGE (V)
VGE (V)
At
At
VCE
=
VCE
Tj =
≤
1200
175
V
600
175
V
Tj ≤
ºC
ºC
Copyright by Vincotech
10
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Figure 29
IGBT
Reverse bias safe operating area
IC = f(VCE
35
)
IC MAX
30
25
20
15
10
5
0
0
200
400
600
800
1000
1200
1400
V
CE (V)
At
Tj =
Tjmax-25
ºC
3 level switching
Uccminus=Uccplus
Switching mode :
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)
NTC-typical temperature characteristic
5000
4000
3000
2000
1000
0
25
50
75
100
125
T (°C)
Copyright by Vincotech
11
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
32 Ω
Rgon
Rgoff
32 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
125
200
tdoff
IC
%
%
VCE
100
150
VGE 90%
VCE 90%
75
VCE
VGE
100
IC
VGE
50
25
0
IC 1%
tdon
tEoff
50
VCE 3%
VGE10%
IC10%
0
tEon
-50
-25
2,9
3
3,1
3,2
3,3
3,4
3,5
-0,2
0
0,2
0,4
0,6
0,8
time(us)
time (us)
VGE (0%) =
VGE (0%) =
-15
15
V
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
V
15
V
600
15
V
600
15
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,27
0,63
ꢁs
ꢁs
0,09
0,36
ꢁs
ꢁs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
200
Ic
%
fitted
VCE
%
IC
100
150
IC 90%
75
50
25
0
VCE
100
IC
60%
IC90%
tr
IC 40%
50
IC10%
IC10%
0
tf
-25
-50
0
0,1
0,2
0,3
0,4
0,5
0,6
3
3,1
3,2
3,3
3,4
3,5
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
15
V
600
15
V
A
A
0,12
ꢁs
0,04
ꢁs
Copyright by Vincotech
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Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
200
%
%
IC
1%
Pon
Eoff
Poff
100
150
100
50
75
50
Eon
25
VCE
3%
VGE 10%
VGE 90%
0
tEon
0
tEoff
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
2,8
3
3,2
3,4
3,6
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
8,98
1,39
0,63
kW
mJ
ꢁs
8,98
1,76
0,36
kW
mJ
ꢁs
tEoff
=
tEon =
Figure 7
Output inverter IGBT
Figure 8
Output inverter FWD
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
150
%
15
10
5
Id
100
trr
50
Vd
0
0
IRRM 10%
-5
fitted
-50
-100
-150
IRRM 90%
IRRM 100%
-10
-15
-20
3
3,2
3,4
3,6
3,8
4
-25
0
25
50
75
100
125
Qg (nC)
time(us)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
V
600
15
V
15
V
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
600
15
V
-13
0,51
A
trr
=
A
ꢁs
117,46
nC
Copyright by Vincotech
13
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Switching Definitions Output Inverter
Figure 9
Output inverter FWD
Figure 10
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
125
%
%
Erec
Id
100
75
Qrr
100
tErec
tQrr
50
50
0
-50
Prec
25
0
-100
-25
3
3,2
3,4
3,6
3,8
4
4,2
3
3,2
3,4
3,6
3,8
4
4,2
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
15
A
8,98
1,18
1,00
kW
mJ
ꢁs
Qrr (100%) =
2,94
1,00
ꢁC
ꢁs
tQrr
=
tErec =
Copyright by Vincotech
14
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste ,housing without clips
without thermal paste ,housing with clips
10-RZ126PA015SC-M628F41
10-R0126PA015SC-M628F40
M628F41
M628F40
M628F41
M628F40
Outline
without clips
with clips
Pinout
Copyright by Vincotech
15
Revision: 2
10-R0126PA015SC-M628F40
10-RZ126PA015SC-M628F41
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
16
Revision: 2
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