首页 |元器件品牌

10-RZ126PA035SC-M620F41 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
10-RZ126PA035SC-M620F41
型号： 10-RZ126PA035SC-M620F41
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
文件： 总16页 (文件大小：2258K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
flow 90PACK 0  
1200V/35A  
Features  
flow 90PACK 0  
●
90°PCB mounting for easy heat sink assembly  
● Clip-in PCB mounting (optional)  
● Open emitter for easy current sensing  
with clips  
without clips  
Target Applications  
Schematic  
● Standard Drive  
● Servo Drive  
● Bookshelf Inverter  
Types  
● 10-RZ126PA035SC-M620F41  
● 10-R0126PA035SC-M620F40  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Inverter Transistor  
Collector-emitter break down voltage  
DC collector current *  
VCE  
IC  
1200  
V
A
Th=80°C  
38  
49  
Tj=Tjmax  
Tc=80°C  
ICpulse  
tp limited by Tjmax  
Pulsed collector current  
105  
70  
A
Turn off safe operating area  
Power dissipation per IGBT *  
Gate-emitter peak voltage  
Short circuit ratings  
VCE ≤ 1200V, Tj ≤ Top max  
A
Th=80°C  
Tc=80°C  
101  
153  
Ptot  
Tj=Tjmax  
W
V
VGE  
±20  
tSC  
Tj≤150°C  
10  
µs  
V
VCC  
VGE=15V  
800  
Tjmax  
Maximum Junction Temperature  
* measured with phase-change material  
Inverter Diode  
175  
°C  
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
DC forward current *  
1200  
V
A
Th=80°C  
Tc=80°C  
31  
40  
Tj=Tjmax  
tp limited by Tjmax  
Tj=Tjmax  
Repetitive peak forward current  
Power dissipation per Diode *  
50  
A
Th=80°C  
Tc=80°C  
64  
97  
W
°C  
Tjmax  
Maximum Junction Temperature  
175  
* measured with phase-change material  
Copyright by Vincotech  
1
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Thermal Properties  
Tstg  
Top  
Storage temperature  
-40…+125  
-40…+150  
°C  
°C  
Operation temperature under switching condition  
Insulation Properties  
Insulation voltage  
Vis  
t=2s  
DC voltage  
4000  
min 12,7  
min 10,93  
>200  
V
Creepage distance  
Clearance  
mm  
mm  
Comparative tracking index  
CTI  
Copyright by Vincotech  
2
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
Inverter Transistor  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
5,8  
6,5  
2,3  
VGE(th) VCE=VGE  
0,0012  
35  
V
V
1,5  
1,95  
2,24  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0,015  
200  
0
1200  
0
mA  
nA  
ꢀ
20  
none  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
94  
97  
47  
Rise time  
45  
ns  
210  
281  
63  
130  
2,94  
4,08  
1,97  
3,38  
td(off)  
tf  
Turn-off delay time  
Rgoff=16 ꢀ  
Rgon=16 ꢀ  
±15  
600  
35  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
1950  
155  
115  
270  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
Reverse transfer capacitance  
Gate charge  
±15  
960  
40  
nC  
Phase-Change  
Material  
RthJH  
Thermal resistance chip to heatsink per chip  
Thermal resistance chip to heatsink per chip  
0,94  
1,10  
K/W  
Thermal grease  
thickness≤50um  
λ = 1 W/mK  
RthJH  
K/W  
Inverter Diode  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
1,2  
1,90  
1,88  
15  
2,3  
VF  
IRRM  
trr  
Diode forward voltage  
25  
35  
V
A
Peak reverse recovery current  
Reverse recovery time  
21  
333  
565  
2,69  
5,50  
114  
86  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=16 ꢀ  
±15  
600  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
1,07  
2,27  
Erec  
Phase-Change  
Material  
RthJH  
Thermal resistance chip to heatsink per chip  
Thermal resistance chip to heatsink per chip  
1,49  
1,75  
K/W  
K/W  
Thermal grease  
thickness≤50um  
λ = 1 W/mK  
RthJH  
Thermistor  
Rated resistance  
Deviation of R25  
Power dissipation  
Power dissipation constant  
B-value  
R
∆R/R  
P
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
4700  
ꢀ
%
-5  
5
200  
2
mW  
mW/K  
K
B(25/50)  
Tol. ±3%  
3500  
3560  
B(25/100)  
B-value  
K
Vincotech NTC Reference  
G
Copyright by Vincotech  
3
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Output Inverter  
Figure 1  
Output inverter IGBT  
Figure 2  
Typical output characteristics  
Output inverter IGBT  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
100  
100  
80  
60  
40  
20  
80  
60  
40  
20  
0
0
0
0
1
2
3
Tj = 25°C  
3
4
5
1
2
3
4
5
VCE (V)  
VCE (V)  
At  
At  
tp =  
tp =  
250  
25  
ꢁs  
250  
150  
ꢁs  
Tj =  
Tj =  
°C  
°C  
VGE from  
VGE from  
7 V to 17 V in steps of 1 V  
7 V to 17 V in steps of 1 V  
Figure 3  
Output inverter IGBT  
Figure 4  
Output inverter FWD  
Typical transfer characteristics  
Typical diode forward current as  
a function of forward voltage  
IF = f(VF)  
IC = f(VGE  
)
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
Tj = Tjmax-25°C  
Tj = 25°C  
Tj = Tjmax-25°C  
0
0
2
4
6
8
10  
12  
0
1
2
4
5
VGE (V)  
VF (V)  
At  
At  
tp =  
tp =  
250  
10  
ꢁs  
250  
ꢁs  
VCE  
=
V
Copyright by Vincotech  
4
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Output Inverter  
Figure 5  
Output inverter IGBT  
Figure 6  
Output inverter IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(IC)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
12  
10  
8
8
6
4
2
0
Eon High T  
Eon High T  
Eon Low T  
Eon Low T  
6
Eoff High T  
Eoff High T  
4
Eoff Low T  
Eoff Low T  
2
0
0
15  
30  
45  
60  
75  
0
15  
30  
45  
60  
75  
I C (A)  
R G ( Ω )  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
°C  
V
°C  
V
V
A
25/150  
25/150  
VCE  
VGE  
=
=
VCE  
VGE  
IC =  
=
=
600  
±15  
16  
600  
±15  
35  
V
Rgon  
Rgoff  
=
=
ꢀ
ꢀ
16  
Figure 7  
Output inverter FWD  
Figure 8  
Output inverter FWD  
Typical reverse recovery energy loss  
as a function of collector current  
Erec = f(IC)  
Typical reverse recovery energy loss  
as a function of gate resistor  
Erec = f(RG)  
3,0  
3,0  
Erec  
Tj = 150°C  
2,5  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Tj = 150°C  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Tj = 25°C  
Tj = 25°C  
Erec  
0
15  
30  
45  
60  
75  
0
15  
30  
45  
60  
75  
I C (A)  
R G ( Ω )  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
°C  
V
°C  
V
V
A
25/150  
25/150  
VCE  
VGE  
=
=
VCE  
VGE  
IC =  
=
=
600  
±15  
16  
600  
±15  
35  
V
Rgon  
=
ꢀ
Copyright by Vincotech  
5
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Output Inverter  
Figure 9  
Output inverter IGBT  
Figure 10  
Output inverter IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1,00  
1,00  
0,10  
0,01  
0,00  
tdoff  
tdoff  
tdon  
tf  
tf  
0,10  
tr  
tdon  
tr  
0,01  
0,00  
0
15  
30  
45  
60  
75  
0
15  
30  
45  
60  
75  
I C (A)  
R G ( Ω )  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
150  
600  
±15  
16  
°C  
V
150  
600  
±15  
35  
°C  
V
V
A
=
=
=
=
V
Rgon  
Rgoff  
=
=
ꢀ
ꢀ
16  
Figure 11  
Output inverter FWD  
Figure 12  
Output inverter FWD  
Typical reverse recovery time as a  
function of collector current  
trr = f(IC)  
Typical reverse recovery time as a  
function of IGBT turn on gate resistor  
trr = f(Rgon  
)
0,75  
0,8  
trr  
trr  
Tj = 150°C  
0,6  
0,45  
0,3  
0,6  
Tj = 150°C  
trr  
0,5  
trr  
Tj = 25°C  
0,3  
Tj = 25°C  
0,2  
0,0  
0,15  
0
0
0
15  
30  
45  
60  
75  
15  
30  
45  
60  
75  
I C (A)  
R g on ( Ω )  
At  
At  
Tj =  
VCE  
VGE  
25/150  
Tj =  
VR =  
IF =  
25/150  
600  
°C  
V
°C  
V
A
V
=
=
600  
±15  
16  
V
35  
Rgon  
=
VGE =  
ꢀ
±15  
Copyright by Vincotech  
6
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Output Inverter  
Figure 13  
Output inverter FWD  
Figure 14  
Output inverter FWD  
Typical reverse recovery charge as a  
function of collector current  
Qrr = f(IC)  
Typical reverse recovery charge as a  
function of IGBT turn on gate resistor  
Qrr = f(Rgon  
)
8
6
Tj = 150°C  
Qrr  
Qrr  
5
4
3
2
1
6
Tj = 150°C  
4
Tj = 25°C  
Qrr  
Qrr  
Tj = 25°C  
2
0
0
0
0
15  
30  
45  
60  
75  
15  
30  
45  
60  
75  
I C (A)  
R g on ( Ω)  
At  
At  
Tj =  
VCE  
VGE  
25/150  
600  
Tj =  
VR =  
IF =  
25/150  
600  
°C  
V
°C  
V
A
V
=
=
±15  
V
35  
Rgon  
=
VGE =  
16  
ꢀ
±15  
Figure 15  
Output inverter FWD  
Figure 16  
Output inverter FWD  
Typical reverse recovery current as a  
function of collector current  
IRRM = f(IC)  
Typical reverse recovery current as a  
function of IGBT turn on gate resistor  
IRRM = f(Rgon  
)
25  
35  
Tj = 150°C  
30  
25  
20  
15  
10  
5
20  
15  
10  
5
IRRM  
Tj = 25°C  
IRRM  
Tj=150°C  
IRRM  
Tj=25°C  
IRRM  
0
0
0
0
15  
30  
45  
60  
75  
15  
30  
45  
60  
75  
I C (A)  
R gon ( Ω )  
At  
At  
Tj =  
VCE  
VGE  
25/150  
600  
Tj =  
VR =  
IF =  
25/150  
°C  
V
°C  
V
A
V
=
600  
35  
=
±15  
V
Rgon  
=
VGE =  
16  
ꢀ
±15  
Copyright by Vincotech  
7
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Output Inverter  
Figure 17  
Output inverter FWD  
Figure 18  
Output inverter FWD  
Typical rate of fall of forward  
and reverse recovery current as a  
function of collector current  
dI0/dt,dIrec/dt = f(IC)  
Typical rate of fall of forward  
and reverse recovery current as a  
function of IGBT turn on gate resistor  
dI0/dt,dIrec/dt = f(Rgon  
)
800  
3000  
dI0/dt  
dI0/dt  
µ
µ
µ
µ
dIrec/dt  
700  
600  
500  
400  
300  
200  
100  
0
2500  
2000  
1500  
1000  
500  
dIrec/dt  
0
0
10  
20  
30  
40  
50  
60  
70  
Ω )  
I C (A)  
R gon  
(
0
10  
20  
30  
40  
50  
60  
70  
At  
At  
Tj =  
VCE  
25/150  
600  
Tj =  
VR =  
IF =  
25/150  
600  
°C  
V
°C  
V
A
V
=
VGE  
=
±15  
V
35  
Rgon  
=
VGE =  
16  
ꢀ
±15  
Figure 19  
Output inverter IGBT  
Figure 20  
Output inverter FWD  
IGBT transient thermal impedance  
as a function of pulse width  
ZthJH = f(tp)  
FWD transient thermal impedance  
as a function of pulse width  
ZthJH = f(tp)  
101  
101  
100  
100  
D = 0,5  
0,2  
D = 0,5  
0,2  
10-1  
10-1  
0,1  
0,1  
0,05  
0,02  
0,01  
0,005  
0.000  
0,05  
0,02  
0,01  
0,005  
0.000  
10-2  
10-2  
10-5  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
1011  
10-4  
10-3  
10-2  
10-1  
100  
1011  
t p (s)  
t p (s)  
At  
At  
tp / T  
0,94  
tp / T  
1,49  
D =  
D =  
RthJH  
=
RthJH  
=
RthJH  
=
RthJH =  
K/W  
1,10  
K/W  
K/W  
1,75  
K/W  
IGBT thermal model values  
Thermal grease  
FWD thermal model values  
Thermal grease  
Phase change interface  
Phase change interface  
R (C/W)  
0,11  
Tau (s)  
9,5E-01  
1,2E-01  
4,8E-02  
5,9E-03  
5,6E-04  
R (C/W)  
0,13  
Tau (s)  
R (C/W)  
0,06  
Tau (s)  
3,1E+00  
4,3E-01  
7,0E-02  
1,9E-02  
4,2E-03  
5,7E-04  
R (C/W)  
0,07  
Tau (s)  
9,5E-01  
1,2E-01  
4,8E-02  
5,9E-03  
5,6E-04  
3,1E+00  
4,3E-01  
7,0E-02  
1,9E-02  
4,2E-03  
5,7E-04  
0,41  
0,49  
0,12  
0,14  
0,30  
0,35  
0,70  
0,83  
0,07  
0,08  
0,32  
0,38  
0,04  
0,04  
0,16  
0,19  
0,11  
0,13  
Copyright by Vincotech  
8
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Output Inverter  
Figure 21  
Output inverter IGBT  
Figure 22  
Output inverter IGBT  
Power dissipation as a  
function of heatsink temperature  
Ptot = f(Th)  
Collector current as a  
function of heatsink temperature  
IC = f(Th)  
200  
160  
120  
80  
60  
50  
40  
30  
20  
10  
0
40  
0
T h  
(
o C)  
T h (  
o C)  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
At  
At  
Tj =  
Tj =  
VGE  
175  
°C  
175  
15  
°C  
V
=
Figure 23  
Power dissipation as a  
Output inverter FWD  
Figure 24  
Forward current as a  
Output inverter FWD  
function of heatsink temperature  
function of heatsink temperature  
Ptot = f(Th)  
IF = f(Th)  
125  
100  
75  
50  
25  
0
50  
40  
30  
20  
10  
0
o C)  
T h (  
o C)  
0
50  
100  
150  
200  
T h  
(
0
50  
100  
150  
200  
At  
At  
Tj =  
Tj =  
175  
°C  
175  
°C  
Copyright by Vincotech  
9
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Output Inverter  
Figure 25  
Output inverter IGBT  
Figure 26  
Gate voltage vs Gate charge  
Output inverter IGBT  
Safe operating area as a function  
of collector-emitter voltage  
IC = f(VCE  
)
VGE = f(QGE  
17,5  
)
103  
15  
12,5  
10  
102  
240V  
100uS  
1mS  
960V  
10mS  
100mS  
101  
DC  
7,5  
5
100  
10-1  
2,5  
0
0
25  
50  
75  
100  
125  
150  
175 200  
Q g (nC)  
100  
103  
101  
102  
VCE (V)  
At  
At  
IC  
=
D =  
Th =  
35  
A
single pulse  
80  
ºC  
VGE  
Tj =  
=
±15  
V
Tjmax  
ºC  
Figure 27  
Output inverter IGBT  
Figure 28  
Output inverter IGBT  
Short circuit withstand time as a function of  
gate-emitter voltage  
Typical short circuit collector current as a function of  
gate-emitter voltage  
tsc = f(VGE  
)
VGE = f(QGE  
)
350  
17,5  
300  
250  
200  
150  
100  
50  
15  
12,5  
10  
7,5  
5
2,5  
0
0
12  
13  
14  
15  
16  
17  
18  
19  
20  
12  
13  
14  
15  
16  
17  
18  
19  
20  
VGE (V)  
VGE (V)  
At  
At  
VCE  
=
VCE  
Tj =  
≤
1200  
175  
V
1200  
175  
V
Tj ≤  
ºC  
ºC  
Copyright by Vincotech  
10  
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Figure 29  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
80  
)
IC MAX  
70  
60  
50  
40  
30  
20  
10  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
V
CE (V)  
At  
Tj =  
Tjmax-25  
ºC  
3phase SPWM  
Uccminus=Uccplus  
Switching mode :  
Thermistor  
Figure 30  
Thermistor  
Typical NTC characteristic  
as a function of temperature  
RT = f(T)  
NTC-typical temperature characteristic  
5000  
4000  
3000  
2000  
1000  
0
T (°C)  
25  
45  
65  
85  
105  
125  
Copyright by Vincotech  
11  
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Switching Definitions Output Inverter  
General conditions  
Tj  
=
=
=
150 °C  
16 Ω  
Rgon  
Rgoff  
16 Ω  
Figure 1  
Output inverter IGBT  
Figure 2  
Output inverter IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff  
Turn-on Switching Waveforms & definition of tdon, tEon  
(tEoff = integrating time for Eoff  
)
(tEon = integrating time for Eon)  
120  
175  
tdoff  
%
%
VCE  
IC  
150  
100  
VGE 90%  
VCE 90%  
125  
80  
60  
40  
20  
0
VCE  
IC  
100  
VGE  
75  
tdon  
tEoff  
50  
25  
VCE 3%  
IC 1%  
IC10%  
VGE10%  
VGE  
0
tEon  
-20  
-25  
-0,2  
0
0,2  
0,4  
0,6  
0,8  
2,8  
3
3,2  
3,4  
3,6  
time(us)  
time (us)  
VGE (0%) =  
VGE (0%) =  
-15  
15  
V
-15  
15  
V
VGE (100%) =  
VC (100%) =  
IC (100%) =  
VGE (100%) =  
VC (100%) =  
IC (100%) =  
V
V
600  
35  
V
600  
35  
V
A
A
tdoff  
tEoff  
=
=
tdon  
tEon  
=
=
0,28  
0,66  
ꢁs  
ꢁs  
0,10  
0,39  
ꢁs  
ꢁs  
Figure 3  
Output inverter IGBT  
Figure 4  
Output inverter IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
140  
175  
%
%
Ic  
120  
fitted  
IC  
150  
125  
VCE  
100  
IC 90%  
80  
VCE  
100  
IC90%  
IC  
60%  
60  
75  
tr  
40  
20  
0
IC 40%  
50  
25  
IC10%  
IC10%  
tf  
0
-20  
-25  
0,1  
0,2  
0,3  
0,4  
0,5  
0,6  
3
3,1  
3,2  
3,3  
3,4  
3,5  
time (us)  
time(us)  
VC (100%) =  
IC (100%) =  
tf =  
VC (100%) =  
IC (100%) =  
tr =  
600  
35  
V
600  
35  
V
A
A
0,13  
ꢁs  
0,05  
ꢁs  
Copyright by Vincotech  
12  
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Switching Definitions Output Inverter  
Figure 5  
Output inverter IGBT  
Figure 6  
Output inverter IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
120  
180  
%
Poff  
%
Eoff  
100  
Pon  
140  
80  
Eon  
100  
60  
40  
60  
20  
VGE 90%  
20  
VGE 10%  
VCE  
3%  
0
tEoff  
tEon  
IC  
1%  
-20  
-20  
2,8  
3
3,2  
3,4  
3,6  
-0,2  
0
0,2  
0,4  
0,6  
0,8  
time (us)  
time(us)  
Poff (100%) =  
Eoff (100%) =  
Pon (100%) =  
Eon (100%) =  
20,99  
kW  
mJ  
ꢁs  
20,99  
4,08  
0,39  
kW  
mJ  
ꢁs  
3,38  
0,66  
tEoff  
=
tEon =  
Figure 7  
Output inverter IGBT  
Figure 8  
Output inverter FWD  
Gate voltage vs Gate charge (measured)  
Turn-off Switching Waveforms & definition of trr  
20  
120  
%
Id  
15  
10  
5
80  
trr  
40  
Vd  
fitted  
IRRM10%  
0
-40  
0
IRRM90%  
-5  
IRRM100%  
-80  
-10  
-15  
-120  
-20  
30  
80  
130  
180  
230  
280  
2,5  
3
3,5  
4
4,5  
time(us)  
Qg (nC)  
VGEoff  
VGEon  
=
=
Vd (100%) =  
Id (100%) =  
-15  
V
600  
35  
V
15  
V
A
VC (100%) =  
IC (100%) =  
Qg =  
IRRM (100%) =  
600  
35  
V
-21  
0,57  
A
trr  
=
A
ꢁs  
252,70  
nC  
Copyright by Vincotech  
13  
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Switching Definitions Output Inverter  
Figure 9  
Output inverter FWD  
Figure 10  
Output inverter FWD  
Turn-on Switching Waveforms & definition of tQrr  
(tQrr = integrating time for Qrr)  
Turn-on Switching Waveforms & definition of tErec  
(tErec= integrating time for Erec  
)
150  
120  
%
%
Erec  
100  
Qrr  
100  
Id  
80  
60  
40  
20  
0
tErec  
tQrr  
50  
0
-50  
Prec  
-100  
-20  
2,5  
3
3,5  
4
4,5  
2,5  
3
3,5  
4
4,5  
time(us)  
time(us)  
Id (100%) =  
Prec (100%) =  
Erec (100%) =  
35  
A
20,99  
2,27  
1,00  
kW  
mJ  
ꢁs  
Qrr (100%) =  
5,50  
1,00  
ꢁC  
ꢁs  
tQrr  
=
tErec =  
Copyright by Vincotech  
14  
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
Ordering Code and Marking - Outline - Pinout  
Ordering Code & Marking  
Version  
Ordering Code  
in DataMatrix as  
in packaging barcode as  
without thermal paste ,housing without clips  
without thermal paste ,housing with clips  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
M620F41  
M620F40  
M620F41  
M620F40  
Outline  
without clips  
with clips  
Pinout  
Copyright by Vincotech  
15  
Revision: 2  
10-RZ126PA035SC-M620F41  
10-R0126PA035SC-M620F40  
DISCLAIMER  
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested  
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve  
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit  
described herein; neither does it convey any license under its patent rights, nor the rights of others.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written  
approval of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright by Vincotech  
16  
Revision: 2  

相关型号：

10-THMA-01G

 Channel style heat sink with folded back fins
AAVID

10-TNT2-01G

 Channel style heat sink with folded back fins
AAVID

10-TY12NMB030SM-L394L08

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-TY12NMB030SM01-L394L18

 High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH

10-XC62K

 XC62K
ETC

10-ZB186RA035RJ-L609H08

 High inrush current capability
VINCOTECH

10.0-10%-FA3-20PPM-CARDPACK

 Fixed Resistor, Wire Wound, 3W, 10ohm, 130V, 10% +/-Tol, -20,20ppm/Cel,
VISHAY

10.0000MHZEQXO-1050BM

 CMOS/TTL Output Clock Oscillator, 10MHz Nom, RESIATANCE WELDED, CERAMIC, DIP-14/4
EUROQUARTZ

10.0000MHZEQXO-1050BMH

 CMOS/TTL Output Clock Oscillator, 10MHz Nom, RESIATANCE WELDED, CERAMIC, DIP-14/4
EUROQUARTZ

10.0000MHZEQXO-2100BM

 CMOS/TTL Output Clock Oscillator, 10MHz Nom, HERMETIC SEALED, METAL, DIP-8/4
EUROQUARTZ

10.0000MHZMP2410/50/-10+60/SR

 Series - Fundamental Quartz Crystal, 10MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ

10.0000MHZMP2430/50/-10+60/SR

 Series - Fundamental Quartz Crystal, 10MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ
©2020 ICPDF网 联系我们和版权申明