20-1B06IPB010RC03-P955A65 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;
| 型号： | 20-1B06IPB010RC03-P955A65 |
| 厂家： | 
VINCOTECH |
| 描述： | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
| 文件： | 总33页 (文件大小：2069K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20-1B06IPB010RC03-P955A65
datasheet
flowIPM 1B (CIP)
600 V / 10 A
Topology features
flow 1B 17 mm housing
● Integrated DC capacitor
● Temperature sensor
● Converter+PFC+Inverter
● PFC Shunt
● Gate Drive Circuit including complete Bootstrap Circuit
● Inverter Shunt
● PFC Gate Drive
Component features
● Optimised collector emitter saturation voltage and forward
voltage for low conduction losses
● Reverse conductive IGBT technology
● Smooth switching performance leading to low EMI levels
Housing features
Schematic
● Base isolation: Al2O3
● Ceramic substrate for Thick-film based designs
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
GND
● Embedded Drives
● Industrial Drives
GND
PFC
Vcc
Driver
Vcc
GND
Gate Driver
Types
● 20-1B06IPB010RC03-P955A65
Copyright Vincotech
1
12 Aug. 2022 / Revision 2
20-1B06IPB010RC03-P955A65
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
13
V
A
A
Tj = Tjmax
tp = 10 ms
Tj = Tjmax
Ts = 80 °C
T j = 150 °C
Ts = 80 °C
I FSM
Surge (non-repetitive) forward current
130
80
I 2
t
I 2t-value
A2s
W
P tot
Power dissipation
15
T jmax
Maximum Junction Temperature
150
°C
PFC MOSFET
V DS
I D
Drain to source breakdown voltage
DC drain current
600
13
V
A
T j = T jmax
T s = 80 °C
I Dpulse
E AS
E AR
I AR
T C = 25 °C
Pulsed drain current
159
1135
1,7
9,3
50
A
I D = 9,3 A , V DD = 50 V
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Power dissipation
mJ
mJ
A
I D = 9,3 A , V DD = 50 V
t p limited by T jmax
V DS = 480 V
P AV = E AR*f
dv /dt
P tot
V/ns
W
T j = T jmax
T s = 80 °C
33
V GSS
Gate-source peak voltage
Reverse diode dv/dt
±20
15
V
V DS=0..400V, I SD≤I D, T J=25°C
dv /dt
V/ns
°C
Maximum Junction Temperature
T jmax
150
PFC Diode
V RRM
I F
P tot
T jmax
Peak Repetitive Reverse Voltage
DC forward current
650
30
V
A
T j = T jmax
T j = T jmax
T s = 80 °C
T s = 80 °C
Power dissipation
56
W
°C
Maximum Junction Temperature
175
12 Aug. 2022 / Revision 2
copyright Vincotech
2
20-1B06IPB010RC03-P955A65
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Shunt
I F
P tot
E P
DC forward current
Power dissipation
Pulse energy
10
5
A
W
Repetitive pulse energy
0,8
Ws
limited by max. power dissipation
Inverter IGBT
V CE
I C
Collector-emitter breakdown voltage
DC collector current
600
8
V
A
Tj = Tjmax
Ts = 80 °C
I CRM
tp limited by Tjmax
VCE ≤ 600 V, Tj ≤ 150 °C
Tj = Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
30
A
20
A
P tot
V GE
Ts = 80 °C
16
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
Tj ≤ 150 °C
VGE = 15 V
5
µs
V
V CC
400
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
P tot
T jmax
Peak Repetitive Reverse Voltage
DC forward current
600
8
V
A
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Power dissipation
14
W
°C
Maximum Junction Temperature
175
12 Aug. 2022 / Revision 2
copyright Vincotech
3
20-1B06IPB010RC03-P955A65
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Driver*
Supply Voltage Range
PFC Gate Input Voltage
Maximum Junction Temperature
VDD
VPFC GATE
Tjmax
18
18
V
V
150
°C
* for more information see Fairchild's datasheet FAN3100CSX
DC - Shunt
IF
DC forward current
Power dissipation
8
5
A
Ptot
W
DC link Capacitor
UMAX
Maximum DC voltage
500
V
Gate Driver
UCC
UIN
Supply voltage
20
10
V
V
V
Input voltage (LIN, HIN, EN)
Output voltage (FAULT)
UOUT
VCC+0,5
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(T jmax - 25)
Isolation Properties
t = 2 s
DC voltage*
AC Voltage
6000
2500
V
Vis
Isolation voltage
t = 1 min
V
Creepage distance
min 12,7
min 12,7
>200
mm
mm
Clearance
Comparative tracking index
* 100 % Tested in production
CTI
12 Aug. 2022 / Revision 2
copyright Vincotech
4
20-1B06IPB010RC03-P955A65
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
I C [A]
I F [A] T j [°C]
I D [A]
V r [V]
V CE [V]
V DS [V]
V GE [V]
Min
Max
V GS [V]
Input Rectifier Diode
Forward voltage
25
125
25
125
25
125
1,04
0,97
0,87
0,74
25
1,11(1)
V F
V to
r t
7
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
7
7
mΩ
mA
33
I r
1600
25
0,01
λ paste = 3,4W/mK
(PSX)
R th(j-s)
K/W
Thermal resistance junction to sink
4,56
PFC MOSFET
25
125
92,86
106,58
70(1)
r DS(on)
V (GS)th
I GSS
I DSS
r g
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Total gate charge
10
26
mΩ
V
V GS = V DS
0,002 25
2,4
3
3,6
100
5
20
0
0
25
25
nA
µA
Ω
600
0,85
170
21
Q GE
Q GS
25
Gate to source charge
Gate to drain charge
0/10
480
100
25,8
25
25
nC
Q GD
C iss
87
Input capacitance
3800
215
35
C oss
C rss
Output capacitance
f = 1 MHz
0
25
pF
Reverse transfer capacitance
λ paste = 3,4W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
1,25
K/W
PFC Diode
25
125
1,45
1,14
2,8(1)
V F
Forward voltage
10
V
I rm
Reverse leakage current
600
25
10
µA
λ paste = 3,4W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
1,69
K/W
PFC Shunt
Resistance value
R
R
50
mΩ
kΩ
PFC Gate Pull Down Resistor
Resistance value
2,7
12 Aug. 2022 / Revision 2
copyright Vincotech
5
20-1B06IPB010RC03-P955A65
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
I C [A]
I F [A] T j [°C]
I D [A]
V r [V]
V CE [V]
V DS [V]
V GE [V]
Min
Max
V GS [V]
PFC Drive
V DD
I D
Operating Range
25
25
25
25
25
25
25
25
25
25
25
4,5
18
0,35
4,3
V
mA
Supply Current
Inputs/ EN Not Connected
0,2
3,9
3,7
V ON
Turn-On Voltage
3,5
3,3
30
V
V OFF
Turn-Off Voltage
4,1
V
V INL
%VDD
%VDD
%VDD
IN+, IN- Logic Low Voltage
IN+, IN- Logic High Voltage
IN+, IN- Logic Hysteresis Voltage
OUT Current, Mid-Voltage, Sinking
OUT Current, Mid-Voltage, Sourcing
OUT Current, Peak, Sinking
OUT Current, Peak, Sourcing
V INH
70
V HYS
17
2,5
-1,8
3
OUT at VDD/2,
CLOAD = 0,1µF, f = 1 kHz
OUT at VDD/2,
I SINK
A
A
A
A
I SOURCE
I PK_SINK
I PK_SOURCE
CLOAD = 0,1µF, f = 1 kHz
CLOAD = 0,1µF, f = 1 kHz
CLOAD = 0,1µF, f = 1 kHz
-3
Inverter IGBT
V GE(th)
V CEsat
I CES
V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Input capacitance
0,0002 25
4,4
1,7
5
5,6
V
V
25
125
2,20
2,32
2,62(1)
15
0
10
600
25
25
25
0,1
mA
C ies
655
37
C oss
Output capacitance
f = 1 MHz
0
pF
C rss
Reverse transfer capacitance
22
λ paste = 3,4W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
5,79
K/W
Inverter Diode
25
125
1,5
2,23
2,18
2,42(1)
V F
Diode forward voltage
10
V
λ paste = 3,4W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
6,66
K/W
DC - Shunt
Resistance value
R
C
25
25
mΩ
nF
DC link Capacitor
C value
100
12 Aug. 2022 / Revision 2
copyright Vincotech
6
20-1B06IPB010RC03-P955A65
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
I C [A]
I F [A] T j [°C]
I D [A]
V r [V]
V CE [V]
V DS [V]
V GE [V]
Min
Max
V GS [V]
Gate Driver
V CC
I QCC
Supply voltage
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
13
15
17,5
2
V
U LIN = 0 V; U HIN = 3,3 V
Quiescent Vcc supply current
Input voltage (LIN, HIN, EN)
Input voltage (GATE)
1,3
mA
V IN
0
0
5
15
V GATE
V IH
Logic "0" input voltage (LIN, HIN)
Logic "1" input voltage (LIN, HIN)
Positive going threshold voltage (EN)
Negative going threshold voltage (EN)
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
Input bias current LIN high
Input bias current LIN low
1,7
0,7
1,9
1,1
9
2,1
0,9
2,1
1,3
10,3
445
70
2,4
1,1
2,3
1,5
12
U CC = 15 V
V IL
V
V EN, TH+
V EN, TH-
V IN, CLAMP I IN = 4 mA
V IT, TH+
380
510
100
200
100
120
120
UCC
mV
μA
I LIN+
I LIN-
I HIN+
I HIN-
I EN+
V FLT
R ON, FLT
t IN
U LIN = 3,3 V
U LIN = 0 V
110
70
U HIN = 3,3 V
U HIN = 0 V
Input bias current HIN high
Input bias current HIN low
110
45
U HIN = 3,3 V
Input bias current EN high
Output voltage (FAULT)
0
V
Ω
U FAULT = 0,5 V
Low on resistor of pull down trans. (FAULT)
Pulse width for ON or OFF
45
100
1
μs
t ON
Turn-on propagation delay (LIN, HIN)
Turn-off propagation delay (LIN, HIN)
FAULT reset time
400
360
530
490
4
800
760
U LIN/HIN = 0 V or 3,3 V
ns
t OFF
t RST
ms
ns
U LIN/HIN = 0 V & 3,3 V
t DT
Fixed deadtime between high and low side
150
-12
310
Thermistor
Rated resistance
Deviation of R100
R
Δ R/R
P
25
100
25
25
25
25
22000
Ω
%
R100 = 1486 Ω
12
Power dissipation
Power dissipation constant
B-value
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B (25/100)
B-value
K
Vincotech NTC Reference
B
(1)
value at chip level
** including gate driver
12 Aug. 2022 / Revision 2
copyright Vincotech
7
20-1B06IPB010RC03-P955A65
datasheet
Output Inverter
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
35
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
0
1
2
3
4
5
V CE(V)
1
2
3
4
V CE(V)
5
At
At
t p
=
t p =
250
25
μs
°C
250
125
μs
°C
T j =
T j =
U CC from
U CC from
10 V to 17 V in steps of 1 V
10 V to 17 V in steps of 1 V
figure 3.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
40
35
30
25
20
15
10
Tj = Tjmax-25°C
5
Tj = 25°C
0
0
1
2
3
4
5
V F (V)
At
t p
=
250
μs
12 Aug. 2022 / Revision 2
copyright Vincotech
8
20-1B06IPB010RC03-P955A65
datasheet
Output Inverter
figure 4.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon High T
Eon Low T
Eoff High T
Eoff Low T
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j =
°C
V
25/125
400
V CE
U CC
=
15
V
figure 5.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
0,20
Erec
Tj = Tjmax -25°C
0,15
0,10
0,05
0,00
Tj = 25°C
Erec
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
12 Aug. 2022 / Revision 2
copyright Vincotech
9
20-1B06IPB010RC03-P955A65
datasheet
Output Inverter
figure 6.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
10,00
1,00
0,10
0,01
0,00
tdoff
tdon
tr
tf
0
2
4
6
8
10
I C (A)
With an inductive load at
T j =
125
400
15
°C
V
V CE
U CC
=
V
figure 7.
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
0,35
trr
Tj = Tjmax -25°C
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
Tj = 25°C
0
2
4
6
8
10
12
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
12 Aug. 2022 / Revision 2
copyright Vincotech
10
20-1B06IPB010RC03-P955A65
datasheet
Output Inverter
figure 8.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
1,0
Qrr
0,8
Tj = Tjmax -25°C
0,6
0,4
0,2
0,0
Tj = 25°C
Qrr
0
2
4
6
8
10
12
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
figure 9.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
6
IRRM
Tj = Tjmax -25°C
IRRM
5
Tj = 25°C
4
3
2
1
0
0
2
4
6
8
10
12
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
12 Aug. 2022 / Revision 2
copyright Vincotech
11
20-1B06IPB010RC03-P955A65
datasheet
Output Inverter
figure 10.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
600
dI0/dt
µ
µ
µ
µ
dIrec/dt
500
400
300
200
100
0
I
C (A)
0
2
4
6
8
10
12
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
figure 11.
IGBT
figure 12.
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-2
t p (s)
t p (s)
102
100
101
10-5
10-4
10-3
10-2
10-1
100
10110
10-5
10-4
10-3
10-2
10-1
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
5,79
K/W
6,66
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
Tau (s)
R (K/W)
Tau (s)
3,03E-01 6,63E+00
6,11E-01 2,13E-01
3,21E+00 4,88E-02
8,43E-01 1,03E-02
5,62E-01 2,85E-03
2,59E-01 7,40E-04
6,16E-01 3,13E-01
3,07E+00 5,41E-02
7,56E-01 2,30E-02
1,19E+00 4,70E-03
9,47E-01 9,78E-04
7,59E-02 7,51E-04
12 Aug. 2022 / Revision 2
copyright Vincotech
12
20-1B06IPB010RC03-P955A65
datasheet
Output Inverter
figure 13.
IGBT
figure 14.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
35
30
25
20
15
10
5
12
9
6
3
0
0
o C)
T s
(
o C)
0
50
100
150
200
0
50
100
150
200
T s
(
At
At
T j =
T j =
U CC
175
°C
175
15
°C
V
figure 15.
Power dissipation as a
FWD
figure 16.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
30
25
20
15
10
5
12
9
6
3
0
0
0
50
100
150
200
o C)
T s(
o C)
0
50
100
150
200
T s
(
At
At
T j =
T j =
175
°C
175
°C
12 Aug. 2022 / Revision 2
copyright Vincotech
13
20-1B06IPB010RC03-P955A65
datasheet
Output Inverter
figure 17.
IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
103
1mS
100uS
10mS
100mS
DC
102
101
100
10-1
103
100
V CE (V)
101
102
At
U CC
T j =
15
T jmax
V
ºC
figure 18.
Reverse bias safe operating area
IGBT
I C = f(V CE
)
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V CE(V)
At
T j =
T jmax-25
ºC
12 Aug. 2022 / Revision 2
copyright Vincotech
14
20-1B06IPB010RC03-P955A65
datasheet
PFC
figure 1.
MOSFET
figure 2.
Typical output characteristics
I D = f(V DS
MOSFET
Typical output characteristics
I D = f(V DS
)
)
40
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
0
0
0
0,5
1
1,5
2
2,5
3
V DS (V)
0
1
2
3
4
5
6
V DS (V)
At
At
t p
T j =
t p
=
=
250
25
μs
250
125
μs
°C
T j =
°C
U CC from
U CC from
0,3 V to 20,3 V in steps of 2 V
0,3 V to 20,3 V in steps of 2 V
figure 3.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
35
30
25
20
15
10
5
Tj = Tjmax-25°C
Tj = 25°C
0
0
1
1
2
2
3
3
V F (V)
At
t p
=
250
μs
12 Aug. 2022 / Revision 2
copyright Vincotech
15
20-1B06IPB010RC03-P955A65
datasheet
PFC
figure 4.
MOSFET
Typical switching energy losses
as a function of collector current
E = f(I D)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eoff
Eoff
0
5
10
15
20
I D (A)
With an inductive load at
T j =
25/125
400
°C
V
V DS
U CC
=
=
15
V
figure 5.
MOSFET
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I D)
0,35
Tj = Tjmax -25°C
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Tj = 25°C
Erec
0
5
10
15
20
I
D (A)
With an inductive load at
T j =
25/125
400
°C
V
V DS
U CC
=
=
15
V
12 Aug. 2022 / Revision 2
copyright Vincotech
16
20-1B06IPB010RC03-P955A65
datasheet
PFC
figure 6.
MOSFET
Typical switching times as a
function of collector current
t = f(I D)
1,00
0,10
0,01
0,00
tdoff
tdon
tf
tr
I D (A)
0
5
10
15
20
With an inductive load at
T j =
125
400
15
°C
V
V DS
U CC
=
=
V
figure 7.
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I D)
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
0
5
10
15
20
I D (A)
At
T j =
25/125
400
°C
V
V DS
U CC
=
=
15
V
12 Aug. 2022 / Revision 2
copyright Vincotech
17
20-1B06IPB010RC03-P955A65
datasheet
PFC
figure 8.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I D)
1,8
Qrr
1,6
Tj = Tjmax - 25°C
1,4
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qrr
Tj = 25°C
0
5
10
15
20
I
D (A)
At
T j =
25/125
400
°C
V
V DS
U CC
=
=
15
V
figure 9.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I D)
70
IRRM
IRRM
Tj = Tjmax - 25°C
60
Tj = 25°C
50
40
30
20
10
0
0
5
10
15
20
I D (A)
At
T j =
25/125
400
°C
V
V DS
U CC
=
=
15
V
12 Aug. 2022 / Revision 2
copyright Vincotech
18
20-1B06IPB010RC03-P955A65
datasheet
PFC
figure 10.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I D)
12000
10000
8000
6000
4000
2000
0
dI0/dt
dIrec/dt
0
5
10
15
20
I D (A)
At
T j =
25/125
400
°C
V
V DS
U CC
=
=
15
V
figure 11.
MOSFET
figure 12.
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
D = 0,5
0,2
10-1
10-1
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
1,25
K/W
1,69
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
5,14E-02 4,27E+00
1,07E-01 8,50E-01
5,60E-01 1,43E-01
4,22E-01 6,14E-02
9,52E-02 4,55E-03
1,23E-02 7,73E-04
8,05E-02 4,27E+00
1,91E-01 6,99E-01
1,02E+00 1,19E-01
2,22E-01 4,31E-02
1,35E-01 7,08E-03
4,15E-02 1,19E-03
4,59E-03 7,10E-04
12 Aug. 2022 / Revision 2
copyright Vincotech
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20-1B06IPB010RC03-P955A65
datasheet
PFC
figure 13.
MOSFET
figure 14.
Collector current as a
MOSFET
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
function of heatsink temperature
I D = f(T s)
140
120
100
80
25
20
15
10
5
60
40
20
0
0
T s (
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
T j =
At
T j =
175
ºC
175
15
ºC
V
U CC
=
figure 15.
Power dissipation as a
FWD
figure 16.
FWD
Forward current as a
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
90
80
70
60
50
40
30
20
10
0
15
12
9
6
3
0
0
50
100
150
200
T s
(
o C)
T s (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
12 Aug. 2022 / Revision 2
copyright Vincotech
20
20-1B06IPB010RC03-P955A65
datasheet
PFC
figure 17.
MOSFET
Safe operating area as a function
of collector-emitter voltage
I D = f(V DS
)
103
102
10uS
100mS
1mS
100uS
10mS
101
DC
100
10-1
100
102
101
103
V DS (V)
At
D =
T s =
single pulse
80
ºC
U CC
=
V
15
T j =
T jmax
figure 18.
Reverse bias safe operating area
MOSFET
I D = f(V DS
)
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
V DS(V)
At
T j =
T jmax-25
ºC
12 Aug. 2022 / Revision 2
copyright Vincotech
21
20-1B06IPB010RC03-P955A65
datasheet
Input Rectifier Diode
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
25
20
15
10
101
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
5
Tj = 25°C
Tj = Tjmax-25°C
0
10-2
0,0
0,5
1,0
1,5
2,0
10-5
10-4
10-3
10-2
10-1
100
10110
t p (s)
V F (V)
At
At
t p
=
t p / T
250
μs
D =
R th(j-s)
=
4,56
K/W
figure 3.
Power dissipation as a
Rectifier Diode
figure 4.
Forward current as a
Rectifier Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
35
30
25
20
15
10
5
15
12
9
6
3
0
0
o C)
T s (
o C)
0
30
60
90
120
150
T s
(
0
30
60
90
120
150
At
At
T j =
T j =
150
ºC
150
ºC
12 Aug. 2022 / Revision 2
copyright Vincotech
22
20-1B06IPB010RC03-P955A65
datasheet
Shunt
figure 1.
PFC Shunt
figure 2.
Pulse Power R2
DC Shunt
Pulse Power R1
103
103
Single
Repetitive
Single
Repetitive
102
102
101
101
100
100
10-1
100
102
103
104 t pulse (ms)
101
10-1
100
101
102
103
104
t pulse (ms)
dR/R0 < 5% after 1 pulse
dR/R0 < 5% after 10.000 cycles; duty cycle< 0,1%
dR/R0 < 1% after 1 pulse
dR/R0 < 1% after 10.000 cycles; duty cycle< 0,1%
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
45
65
85
105
125
T (°C)
12 Aug. 2022 / Revision 2
copyright Vincotech
23
20-1B06IPB010RC03-P955A65
datasheet
Switching Definitions Output Inverter
General conditions
T j
=
125 °C
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
200
%
IC
tdoff
%
VCE
100
75
50
25
0
150
100
VCE 90%
UIN 90%
IC
UIN
UIN
VCE
tdon
tEoff
50
VCE 3%
UIN10%
IC10%
IC 1%
0
tEon
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
2,9
3,1
3,3
3,5
3,7
3,9
time(us)
time (us)
UIN (0%) =
0
5
400
V
UIN (0%) =
UIN (100%) =
V C (100%) =
I C (100%) =
0
V
UIN (100%) =
V C (100%) =
I C (100%) =
V
V
5
400
6
V
V
6
A
A
t doff
=
=
0,95
1,11
μs
μs
t don
=
=
0,63
0,83
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
125
200
fitted
%
%
VCE
IC
175
150
125
100
IC 90%
75
50
25
0
VCE
IC
60%
100
IC90%
IC 40%
75
tr
50
25
IC10%
tf
IC10%
Ic
0
-25
-25
0,6
0,7
0,8
0,9
1
1,1
1,2
3,5
3,6
3,7
3,8
3,9
4
time(us)
time (us)
V C (100%) =
I C (100%) =
t f =
400
6
V
V C (100%) =
I C (100%) =
t r =
400
6
V
A
A
0,02
μs
0,03
μs
12 Aug. 2022 / Revision 2
copyright Vincotech
24
20-1B06IPB010RC03-P955A65
datasheet
Switching Definitions Output Inverter
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
200
%
Pon
%
Eoff
100
150
Poff
75
50
Eon
100
50
0
25
IC
UIN 10%
VCE
3%
1%
UIN 90%
tEon
0
tEoff
-50
-25
2,9
3,1
3,3
3,5
3,7
3,9
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
time(us)
time (us)
P off (100%) =
E off (100%) =
2,39
kW
mJ
μs
P on (100%) =
E on (100%) =
2,39
0,32
0,83
kW
mJ
μs
0,20
1,11
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
120
Id
%
80
trr
40
fitted
Vd
0
IRRM10%
-40
-80
IRRM 90%
IRRM 100%
-120
3,5
3,6
3,7
3,8
3,9
4
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
400
6
V
A
-6
A
t rr
=
0,28
μs
12 Aug. 2022 / Revision 2
copyright Vincotech
25
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datasheet
Switching Definitions Output Inverter
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec)
150
125
%
%
Erec
Id
Qrr
100
100
tQrr
tErec
50
75
50
25
0
0
-50
Prec
-100
-150
-25
3,5
3,6
3,7
3,8
3,9
4
4,1
4,2
4,3
3,6
3,8
4
4,2
4,4
time(us)
time(us)
I d (100%) =
Q rr (100%) =
6
A
P rec (100%) =
E rec (100%) =
2,39
0,16
0,59
kW
0,67
0,59
μC
μs
mJ
μs
t Q rr
=
t E rec =
12 Aug. 2022 / Revision 2
copyright Vincotech
26
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datasheet
Switching Definitions PFC
General conditions
T j
=
125 °C
figure 1.
MOSFET
figure 2.
MOSFET
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
300
%
tdoff
%
100
250
VGE
90%
VCE
90%
IC
75
50
25
0
200
IC
VGATE
tEoff
150
VGATE
VCE
IC
1%
100
VCE
tdon
50
-25
-50
-75
VCE3%
VGATE10%
IC10%
0
tEon
-50
2,95
3
3,05
3,1
3,15
-0,1
-0,05
0
0,05
0,1
0,15
0,2
time(us)
time (us)
VGATE (0%) =
0
V
VGATE (0%) =
VGATE (100%) =
V D (100%) =
I D (100%) =
0
V
VGATE (100%) =
V D (100%) =
I D (100%) =
5
V
5
V
400
10
V
400
10
V
A
A
t doff
=
=
0,15
0,19
μs
μs
t don
=
=
0,03
0,08
μs
μs
t E off
t E on
figure 3.
MOSFET
figure 4.
MOSFET
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
150
300
%
%
VCE
Ic
125
250
200
150
fitted
IC
100
Ic 90%
75
Ic
60%
50
Ic
40%
VCE
100
25
IC 90%
Ic10%
tr
0
-25
-50
-75
tf
50
IC 10%
0
-50
3
3,02
3,04
3,06
3,08
3,1
0,05
0,075
0,1
0,125
0,15
0,175
time(us)
time (us)
V D (100%) =
I D (100%) =
t f =
400
10
V
V D (100%) =
I D (100%) =
t r =
400
10
V
A
A
0,002
μs
0,007
μs
12 Aug. 2022 / Revision 2
copyright Vincotech
27
20-1B06IPB010RC03-P955A65
datasheet
Switching Definitions PFC
figure 5.
MOSFET
figure 6.
MOSFET
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
%
250
%
Pon
Eoff
100
200
Ic 1%
75
150
Poff
50
Eon
100
25
VGATE90%
50
0
tEoff
VGATE10%
Uce 3%
0
tEon
-25
-50
-50
2,95
3
3,05
3,1
3,15
-0,05
0
0,05
0,1
0,15
0,2
time (us)
time(us)
P off (100%) =
E off (100%) =
3,99
kW
mJ
μs
P on (100%) =
E on (100%) =
3,99
0,24
0,085
kW
mJ
μs
0,06
0,19
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Ud
fitted
0
-50
IRRM10%
-100
-150
-200
IRRM90%
IRRM100%
3
3,025
3,05
3,075
3,1
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
400
10
V
A
-19
0,04
A
t rr
=
μs
12 Aug. 2022 / Revision 2
copyright Vincotech
28
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datasheet
Switching Definitions PFC
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
Turn-on Switching Waveforms & definition of t Erec
(t Qrr= integrating time for Q rr
)
(t Erec= integrating time for E rec
)
150
125
%
%
Erec
Id
Qrr
100
100
tQint
tErec
75
50
25
0
50
0
-50
Prec
-100
-150
-200
-25
-50
3,02
3,04
3,06
3,08
3,1
3,12
time(us)
3,02
3,04
3,06
3,08
3,1
3,12
time(us)
I d (100%) =
Q rr (100%) =
10
A
P rec (100%) =
E rec (100%) =
3,99
0,05
0,07
kW
mJ
μs
0,44
0,07
μC
μs
t Qint
=
t E rec =
12 Aug. 2022 / Revision 2
copyright Vincotech
29
20-1B06IPB010RC03-P955A65
datasheet
Application data
Static logic funtion table
VCC
<VCCUV–
15V
VBS
X
RCIN
ITRIP
ENABLE
X
FAULT
0
LO1,2,3
0
HO1,2,3
X
X
X
0
0
0
<VBSUV–
3.3V
High imp /LIN1,2,3
15V
15V
15V
15V
15V
15V
15V
15V
<3.2V↓
X
0
3.3V
3.3V
3.3V
0
0
0
0
0
0
0
> VIT,TH+
> VRCIN,TH
> VRCIN,TH
0
0
High imp /LIN1,2,3 /HIN1,2,3
High imp
0
0
Pin Descriptions
Pin #
Pin Name
Pin Description
1
2
NTC2
NTC1
Temperature sensor connector 1
Temperature sensor connector 2
Inverter sense resistor high-side
Inverter sense resistor low-side
Enable I/O functionality
3
InvS +
InvS -
EN
4
5
6
¬Fault
¬LIN3
¬LIN2
¬LIN1
¬HIN3
¬HIN2
Fault output, indicates over current or under voltage (negative logic, open-drain output)
Signal input for low-side W phase
7
8
Signal input for low-side V phase
9
Signal input for low-side U phase
10
11
Signal input for high-side W phase
Signal input for high-side V phase
12
13
¬HIN1
VCC
Signal input for high-side U phase
Driver circuit supply voltage
14
15
16
17
18
19
20
21
22
23
24
25
26
27
GND2
GND
Inverter ground
PFC gate driver GND
PFC Switch gate driver input
Rectifier input
GATE
AC1
AC2
Rectifier input
DC1 + (coil)
PFC + (coil)
DC1 -
PFC -
DC2 -
DC2 +
W
Rectifier output DC +
PFC coil connector
Rectifier output DC -
PFC return
Inverter input DC -
Inverter input DC +
Output for W phase
Output for V phase
Output for U phase
V
U
12 Aug. 2022 / Revision 2
copyright Vincotech
30
20-1B06IPB010RC03-P955A65
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
without thermal paste, 17 mm housing with solder pins
with thermal paste, 17 mm housing with solder pins
20-1B06IPB010RC03-P955A65
20-1B06IPB010RC03-P955A65-/3/
Name
Type&Ver
TTTTTTTVV
Serial
Date code
WWYY
VIN&Lot
Serial&UL
Text
NN-NNNNNNNNNNNNNN
VIN LLLLL
SSSS UL
Type&Ver
TTTTTTTVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
Pin table
Pin
X
Y
Function
1
45
42
0
0
NTC2
NTC1
Inv_S+
Inv_S-
EN
2
3
39
0
4
36
0
5
33
0
6
30
0
FAULT
LIN3
LIN2
LIN1
HIN3
HIN2
HIN1
VCC
7
27
0
8
24
0
9
21
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
18
0
15
0
12
0
9
0
6
0
GND2
GND
GATE
AC1
3
0
0
0
-0,2
4,8
9,8
14,8
19,8
22,5
25,2
30,2
35,2
40,2
45,2
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
AC2
DC1+
PFC+
DC1-
PFC-
DC2-
DC2+
W
V
U
12 Aug. 2022 / Revision 2
copyright Vincotech
31
20-1B06IPB010RC03-P955A65
datasheet
Ordering Code and Marking - Outline - Pinout
Pinout
Identification
ID
Component
IGBT
Voltage Current
Function
Inverter Switch
PFC Switch
Comment
T1,T2,T3,T4,T5,T6
600 V
600 V
600 V
10 A
70 mΩ
60 A
T7
MOSFET
FWD
D12
PFC Diode
R1
Resistor
Rectifier
Resistor
Capacitor
NTC
PFC Shunt
D7,D8,D9,D10
1600 V
500 V
12 A
Input Rectifier Diode
DC Shunt
R2
C1
NTC
DC Link Capacitor
Thermistor
12 Aug. 2022 / Revision 2
copyright Vincotech
32
20-1B06IPB010RC03-P955A65
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instructions for flow 1B packages see vincotech.com website.
Package data
Package data for flow 1B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
12 Aug. 2022
Change VCEsat and VF max values to chip level values
20-1B06IPB010RC03-P955A65-D2-14
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good
faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur.
Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation,
guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same
will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give
desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in la
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the
life support device or system, or to affect its safety or effectiveness.
12 Aug. 2022 / Revision 2
copyright Vincotech
33
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