30-F212PMA100M7-L880A79 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 30-F212PMA100M7-L880A79 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总32页 (文件大小：9152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-F212PMA100M7-L880A79
datasheet
flowPIM 2
1200 V / 100 A
Features
flow 2 17 mm housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Built-in NTC
Schematic
Target applications
● Industrial Drives
Types
● 30-F212PMA100M7-L880A79
Copyright Vincotech
1
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
116
200
222
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
87
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
165
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
Collector-emitter voltage
1200
94
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
190
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
41
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
80
W
°C
Tjmax
Maximum junction temperature
175
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
13
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
10
A
Ptot
34
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
126
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
890
A
Single Half Sine Wave,
tp = 10 ms
3960
156
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
3
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
12,01
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,01
100
25
5,4
6
6,6
V
V
25
1,53
1,71
1,75
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
0,5
µA
µA
Ω
20
None
21000
700
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
280
VCC = 600 V
15
100
700
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,43
K/W
25
118,2
118,2
117,6
10,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
12,4
13,4
Rgon = 2 Ω
Rgoff = 2 Ω
173,6
200,4
205,6
82,85
96,38
106,77
3,26
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
100
tf
125
150
25
ns
QrFWD=11,6 µC
QrFWD=17,27 µC
QrFWD=19,18 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
4,87
mWs
mWs
5,37
6,6
Eoff
125
150
8,77
9,49
Copyright Vincotech
5
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,82
1,96
1,97
2,1(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,58
K/W
25
178,25
165,9
164,61
149,24
311,54
339,17
11,6
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=9387 A/µs
di/dt=7872 A/µs
di/dt=8350 A/µs
Qr
Recovered charge
±15
600
100
125
150
25
17,27
19,18
5,14
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
7,75
mWs
A/µs
8,59
4044
(dirf/dt)max
125
150
2649
2147
Copyright Vincotech
6
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0075
75
25
5,4
6
6,6
V
V
25
1,55
1,7
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,75
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
4
Cies
Coes
Cres
Qg
16000
480
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
190
VCC = 600 V
15
75
570
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,5
K/W
25
104,8
105,4
104
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
38,4
44,8
49
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
410
td(off)
Turn-off delay time
Fall time
125
150
25
464
ns
481
0/15
700
75
68,13
84,88
91,43
6,77
8,44
8,91
5,6
tf
125
150
25
ns
QrFWD=6,23 µC
QrFWD=8,84 µC
QrFWD=10,01 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
7,79
8,33
Copyright Vincotech
7
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,67
1,78
1,78
2,1(1)
VF
IR
Forward voltage
35
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,18
K/W
25
45,4
46,24
46,77
319,01
462,28
500,81
6,23
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=1820 A/µs
di/dt=1430 A/µs
di/dt=1500 A/µs
Qr
Recovered charge
0/15
700
75
125
150
25
8,84
μC
10,01
2,68
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
4,03
mWs
A/µs
4,66
261,19
258,83
229,88
(dirf/dt)max
125
150
Copyright Vincotech
8
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Brake Sw. Protection Diode
Static
25
1,57
1,66
1,65
2,1(1)
VF
IR
Forward voltage
5
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,76
K/W
Rectifier Diode
Static
25
1,01
0,929
0,92
1,21(1)
1,1(1)
VF
IR
Forward voltage
45
125
150
V
Reverse leakage current
Thermal
Vr = 1600 V
25
50
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,45
K/W
Copyright Vincotech
9
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,427
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,38E-02
4,26E-02
7,30E-02
1,67E-01
8,34E-02
1,52E-02
1,24E-02
4,81E+00
1,02E+00
2,26E-01
6,44E-02
1,89E-02
1,20E-03
3,17E-04
Copyright Vincotech
11
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
22,5
20,0
17,5
15,0
12,5
10,0
7,5
10µs
100
10
100µs
1ms
1
10ms
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
100
200
300
400
500
600
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
A
Ts =
Tj =
80
15
°C
V
25
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Inverter Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,578
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,89E-02
7,07E-02
2,02E-01
1,90E-01
3,24E-02
3,35E-02
3,41E+00
4,06E-01
7,46E-02
2,27E-02
3,47E-03
4,78E-04
Copyright Vincotech
13
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Switch Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 11.
IGBT
figure 12.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
70
10
60
50
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,5
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,92E-02
6,01E-02
1,18E-01
2,25E-01
3,32E-02
2,48E-02
4,73E+00
9,48E-01
1,70E-01
3,80E-02
9,18E-03
8,63E-04
Copyright Vincotech
14
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Switch Characteristics
figure 13.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Diode Characteristics
figure 14.
FWD
figure 15.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,185
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,51E-02
8,94E-02
2,50E-01
4,74E-01
1,69E-01
1,06E-01
5,12E-02
5,63E+00
6,99E-01
9,25E-02
2,37E-02
5,51E-03
7,12E-04
2,07E-04
Copyright Vincotech
16
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Sw. Protection Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
15,0
12,5
10,0
7,5
10
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,759
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,58E-02
1,43E-01
6,08E-01
8,65E-01
7,08E-01
3,69E-01
4,81E+00
3,47E-01
4,61E-02
1,40E-02
2,91E-03
5,42E-04
Copyright Vincotech
17
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Rectifier Diode Characteristics
figure 18.
Rectifier
figure 19.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
200
150
100
50
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,45
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,06E-02
5,87E-02
1,21E-01
2,00E-01
2,12E-02
1,85E-02
7,38E+00
1,30E+00
1,90E-01
4,49E-02
9,83E-03
1,38E-03
Copyright Vincotech
18
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Thermistor Characteristics
figure 20.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
19
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Inverter Switching Characteristics
figure 21.
IGBT
figure 22.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
15,0
12,5
10,0
7,5
25
20
15
10
5
Eoff
Eon
Eon
Eoff
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
5,0
Eoff
2,5
0,0
0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
2
figure 23.
FWD
figure 24.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
12,5
10,0
7,5
10
Erec
Erec
8
Erec
Erec
6
Erec
5,0
4
Erec
2,5
2
0,0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Inverter Switching Characteristics
figure 25.
IGBT
figure 26.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
tr
tf
-1
-1
10
10
tf
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
2
figure 27.
FWD
figure 28.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Inverter Switching Characteristics
figure 29.
FWD
figure 30.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
35
30
25
20
15
10
5
22,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 31.
FWD
figure 32.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
200
175
150
125
100
75
250
200
150
100
50
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Inverter Switching Characteristics
figure 33.
FWD
figure 34.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
125 °C
150 °C
600
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 35.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
23
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Switching Characteristics
figure 36.
IGBT
figure 37.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
40
35
30
25
20
15
10
5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
2,5
0,0
0
0
25
50
75
100
125
150
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 38.
FWD
figure 39.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
24
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Switching Characteristics
figure 40.
IGBT
figure 41.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
0
10
td(on)
tr
td(on)
tr
-1
10
tf
-1
tf
10
-2
10
-2
10
0
25
50
75
100
125
150
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
4
°C
V
150
700
0/15
75
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 42.
FWD
figure 43.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
25
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Switching Characteristics
figure 44.
FWD
figure 45.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
5,0
Qr
2,5
2,5
0,0
0,0
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 46.
FWD
figure 47.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
50
40
30
20
10
0
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
26
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Brake Switching Characteristics
figure 48.
FWD
figure 49.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
2250
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
500
250
0
0
25
50
75
100
125
150
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 50.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
27
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Switching Definitions
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
28
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Switching Definitions
figure 55.
FWD
figure 56.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
29
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-F212PMA100M7-L880A79
30-F212PMA100M7-L880A79-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Function 29
Pin
1
X
Y
0
0
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
Ph3
Ph3
Ph3
S16
G16
G14
S14
Ph2
Ph2
Ph2
Ph1
Ph1
Ph1
S12
G12
71,2
68,7
66,2
63,7
55,95
53,45
55,95
53,45
48,4
45,9
38,9
36,1
38,9
36,1
31,3
28,5
31,3
28,5
19,3
19,3
12,3
9,8
DC-Rect
DC-Rect
DC-Rect
DC-Rect
DC+Rect
DC+Rect
DC+Rect
DC+Rect
DC+Inv1
DC+Inv1
S11
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
2,5
2
0
5
3
0
7,8
4
0
10,6
18,45
21,25
24,05
26,55
29,05
36,1
38,6
41,1
43,9
46,7
53,7
56,2
58,7
71,2
71,2
71,2
71,2
71,2
71,2
68,7
71,2
71,2
71,2
5
0
6
0
7
2,8
2,8
0
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
0
0
0
DC-1
2,8
2,8
0
G11
DC-1
DC-2
37,2
37,2
37,2
37,2
34,7
32,2
25,2
22,7
20,2
12,8
12,8
5,6
ACIn1
ACIn1
ACIn1
ACIn2
ACIn2
ACIn2
ACIn3
ACIn3
ACIn3
Br
0
S13
2,8
2,8
0
DC-2
G13
Therm2
Therm1
DC+Inv2
DC+Inv2
DC+Inv2
DC+Inv2
S15
2,8
0
0
12,3
9,8
2,8
2,8
0
2,8
Br
0
0
DC-3
G27
2,8
2,8
2,8
G15
2,8
DC-Br
0
DC-3
Copyright Vincotech
30
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Pinout
DC+Rect
5,6,7,8
DC+Inv1
9,10
DC+Inv2
21,22,23,24
T12
T14
T16
D11
D13
D15
D27
G12
43
G14
G16
D32
D34
D36
34
33
S12
42
S14
35
S16
32
ACln1
44,45,46
Ph1
39,40,41
ACln2
47,48,49
Ph2
Br
53,54
36,37,38
ACln3
50,51,52
Ph3
29,30,31
D31
D33
D35
T11
T13
T15
T27
D12
D14
D16
D47
G27
55
G11
13
G13
18
G15
27
S11
11
S13
16
S15
25
Rt
DC-Br
56
DC-Rect
1,2,3,4
DC-1
12,14
DC-2
15,17
DC-3
26,28
Therm1
20
Therm2
19
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
100 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
FWD
1200 V
100 A
D15, D16
T27
IGBT
FWD
FWD
1200 V
1200 V
1200 V
75 A
35 A
5 A
Brake Switch
Brake Diode
D27
D47
D31, D32, D33, D34,
D35, D36
Brake Sw. Protection Diode
Rectifier
NTC
1600 V
75 A
Rectifier Diode
Rt
Thermistor
Copyright Vincotech
31
25 Sep. 2021 / Revision 5
30-F212PMA100M7-L880A79
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Updated maximum current
Updated clearance
Rectifier forward voltage condition changed
Brake diode forward voltage is updated
Brake Sw. Protection Diode thermal characteristics updated
Separated datasheet for solder pin version
New datasheet format module is unchanged
30-F212PMA100M7-L880A79-D5-14
25 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
25 Sep. 2021 / Revision 5
相关型号：
30-F2166BA150RW01-L267G19
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
30-FT07NIA450S501-PD68F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-FT07NIA600S501-PD60F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-FT07NIB200S502-LE04F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-FT07NIB200SG02-L965F08
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
VINCOTECH
30-FT07NIB300S502-LE06F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-FT07NIB300S503-LH36F58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-FT10NAA200S701-PE59F08
Low collector emitter saturation voltage;High speed and smooth switching
VINCOTECH
©2020 ICPDF网 联系我们和版权申明