30-FT07NIB200SG02-L965F08 [VINCOTECH]
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage;
| 型号： | 30-FT07NIB200SG02-L965F08 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage |
| 文件： | 总31页 (文件大小：2618K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
1200 V / 200 A
flow NPC 2
Features
flow 2 12 mm housing
● Three-level topology
● High efficiency
● Low inductive package
Schematic
Target applications
● Solar Inverters
Types
● 30-FT07NIB200SG02-L965F08
● 30-PT07NIB200SG02-L965F08Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
650
162
600
318
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
tSC
Tj ≤ 150 °C
VGE = 15 V
5
µs
V
Short circuit ratings
VCC
400
Tjmax
Maximum junction temperature
175
°C
Copyright Vincotech
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04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
VCES
IC
Collector-emitter voltage
650
176
600
290
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
tSC
Tj ≤ 150 °C
VGE = 15 V
6
µs
V
Short circuit ratings
VCC
360
Tjmax
Maximum junction temperature
175
°C
Buck Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
132
400
174
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum Junction Temperature
Boost Diode
VRRM
IF
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1200
120
248
175
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
W
°C
Maximum Junction Temperature
Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
36
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
59
W
°C
Tjmax
Maximum Junction Temperature
175
Copyright Vincotech
2
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
Equivalent AC Voltage
tp = 2 s
4000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
min. 12,7
> 200
mm
mm
Comparative Tracking Index
CTI
* 100 % tested in production
Copyright Vincotech
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04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0032 25
4,2
5,1
5,6
V
V
Collector-emitter saturation voltage
VCEsat
15
200
25
1,38
1,83
2,22
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
11,2
600
µA
nA
Ω
20
none
12400
360
Cies
Cres
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,30
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
137
140
14
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
15
Rgoff = 2 Ω
Rgon = 2 Ω
ns
186
214
7
Turn-off delay time
Fall time
±15
350
121
12
1,215
1,923
0,909
1,585
Qr
Qr
= 4,8 μC
= 9,2 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
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04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0032 25
5,1
5,8
6,4
V
V
25
200
0,93
1,49
1,66
1,77
15
0
125
650
0
25
25
10,8
µA
nA
Ω
IGES
rg
20
1200
1
Cies
12320
366
f = 1 MHz
0
25
25
pF
Cres
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,33
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
163
166
18
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
22
Rgoff = 2 Ω
Rgon = 2 Ω
ns
260
295
67
Turn-off delay time
Fall time
±15
350
121
88
1,531
2,389
3,141
4,557
Qr
Qr
= 7,2 μC
= 16,4 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
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04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,65
1,60
1,58
1,77
10,6
VF
Ir
125
150
Forward voltage
200
V
Reverse leakage current
650
25
µA
Thermal
phase-change
material
Rth(j-s)
Thermal resistance junction to sink
0,55
K/W
λ = 3,4 W/mK
Dynamic
25
125
25
125
25
125
25
125
25
125
167
210
49
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
76
di/dt = 8324 A/μs
di/dt = 9600 A/μs
4,801
9,186
1,130
2,121
4342
3296
±15
350
121
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Boost Diode
Static
25
2,39
2,40
2,49
Forward voltage
Reverse leakage current
Thermal
VF
Ir
150
V
150
25
240
1200
µA
150
28000
phase-change
material
Rth(j-s)
Thermal resistance junction to sink
0,38
K/W
λ = 3,4 W/mK
Dynamic
25
125
25
125
25
125
25
125
25
125
196
245
42
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
148
di/dt = 6421 A/μs
di/dt = 7125 A/μs
7,227
16,387
1,757
4,325
15923
11505
±15
350
121
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
6
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Sw. Protection Diode
Static
25
1,64
1,56
1,87
0,36
Forward voltage
Reverse leakage current
Thermal
VF
Ir
30
V
150
650
25
µA
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,61
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
7
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
125
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
0
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,30
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
5,84E-02
5,19E-02
5,81E-02
8,89E-02
2,61E-02
1,53E-02
4,27E+00
1,01E+00
1,59E-01
3,67E-02
9,09E-03
9,16E-04
Copyright Vincotech
8
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE
)
I
I
I
V
V
V
I
V
D =
single pulse
80 ºC
IC=
200
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
I
I
I
I
t
t
t
t
VCE
Tj
=
VCE
Tj
≤
400
150
V
ºC
400
25
V
ºC
≤
≤
Copyright Vincotech
9
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
IC = f(VCE
)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
tp
=
100
0
μs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
0,33
Tj:
VCE
=
=
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
9,52E-02
5,70E-02
9,58E-02
6,81E-02
1,14E-02
2,20E+00
3,31E-01
8,43E-02
2,66E-02
2,55E-03
Copyright Vincotech
10
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
single pulse
80 ºC
D =
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
11
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,55
Tj:
K/W
FWD thermal model values
(K/W)
R
τ
(s)
6,80E-02
7,78E-02
1,35E-01
2,08E-01
3,75E-02
2,03E-02
4,53E+00
9,81E-01
1,52E-01
3,50E-02
5,94E-03
7,75E-04
Copyright Vincotech
12
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,38
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,05E-02
4,94E-02
8,90E-02
1,31E-01
4,31E-02
2,25E-02
5,75E+00
1,04E+00
1,83E-01
4,42E-02
1,33E-02
1,80E-03
Copyright Vincotech
13
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
150 °C
tp / T
1,61
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,05E-01
1,86E-01
8,60E-01
3,40E-01
1,24E-01
3,05E+00
2,04E-01
3,00E-02
8,15E-03
1,07E-03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
14
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
25 °C
125 °C
With an inductive load at
With an inductive load at
350
±15
2
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
350
±15
121
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
25 °C
125 °C
With an inductive load at
With an inductive load at
350
±15
2
V
V
Ω
:
350
±15
121
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
15
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
125
350
±15
2
°C
V
125
350
±15
121
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
At
VCE
=
V
V
Ω
25 °C
125 °C
At
VCE
=
350
±15
121
V
V
A
25 °C
125 °C
±15
2
:
VGE
I C
=
:
VGE
R gon
=
=
Tj
Tj
=
Copyright Vincotech
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04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
±15
2
V
V
Ω
25 °C
125 °C
350
±15
121
V
V
A
25 °C
125 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I
I
I
I
I
I
At
VCE
=
350
±15
2
V
V
Ω
25 °C
125 °C
At
VCE
=
350
±15
121
V
V
A
25 °C
125 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
17
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
dir r/dt
d
iF
/
/
dt
dt
t
t
t
t
t
t
t
t
dirr
i
i
i
i
i
i
i
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
At
VCE
VGE
I C
=
350
±15
121
V
V
A
25 °C
125 °C
±15
2
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
IC = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon =
R goff =
2
2
Ω
Copyright Vincotech
18
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switching Characteristics
General conditions
=
=
=
125 °C
2 Ω
T j
Rgon
R goff
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VCE
tEoff
VGE
VCE
tEon
-15
-15
V
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
V
350
V
121
A
121
A
0,214
0,289
μs
μs
0,140
0,225
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
V
350
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
121
A
121
A
0,012
μs
0,015
μs
tr
=
Copyright Vincotech
19
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Eon
Poff
tEoff
tEon
P off (100%) =
Eoff (100%) =
42,21
1,59
0,29
kW
mJ
μs
P on (100%) =
Eon (100%) =
42,21
1,92
0,23
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
350
V
121
A
-210
0,076
A
μs
t rr
=
Copyright Vincotech
20
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec
)
Qr
Erec
IF
tErec
Prec
121
A
41,01
2,12
0,15
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
9,19
0,15
μC
μs
t Qr
=
tErec =
Copyright Vincotech
21
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
25 °C
125 °C
With an inductive load at
With an inductive load at
350
±15
2
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
350
±15
121
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
25 °C
125 °C
With an inductive load at
With an inductive load at
350
±15
2
V
V
Ω
:
350
±15
121
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
22
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
125
350
±15
2
°C
V
125
350
±15
121
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
At
VCE
=
V
V
Ω
25 °C
125 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
±15
2
:
VGE
I C
=
±15
121
:
Tj
VGE
R gon
=
=
Tj
=
Copyright Vincotech
23
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
±15
2
V
V
Ω
25 °C
125 °C
350
±15
121
V
V
A
25 °C
125 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I
I
I
I
I
I
A
t
VCE
=
350
±15
2
V
V
Ω
25 °C
125 °C
At
VCE
=
350
±15
121
V
V
A
25 °C
125 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
24
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
d
iF
/
d
t
t
t
t
t
t
t
t
t
dirr/dt
dir r
/dt
i
i
i
i
i
i
i
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
At
VCE
VGE
I C
=
350
±15
121
V
V
A
25 °C
125 °C
±15
2
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon =
R goff =
2
2
Ω
Copyright Vincotech
25
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switching Characteristics
General conditions
=
=
=
125 °C
2 Ω
T j
Rgon
R goff
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
VCE
IC
VGE
tEoff
VCE
tEon
-15
-15
V
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
V
350
126
V
126
A
A
0,295
0,596
μs
μs
0,166
0,239
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
V
350
V
VC (100%) =
I C (100%) =
VC (100%) =
I C (100%) =
126
A
126
A
0,088
μs
0,022
μs
t f
=
tr =
Copyright Vincotech
26
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
150
%
%
IC 1%
Pon
125
100
Poff
Eoff
Eon
100
75
75
50
50
25
25
VGE 90%
VGE 10%
VCE 3%
0
0
tEoff
tEon
-25
-25
2,97
0
0,2
0,4
0,6
0,8
3,04
3,11
3,18
3,25
t
(µs)
t
(µs)
43,94
4,56
0,60
kW
mJ
μs
43,94
2,39
0,24
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
200
%
IF
100
trr
VF
fitted
0
-100
-200
-300
IRRM
10%
IRRM
90%
IRRM
100%
3,14
3,2
3,26
3,32
3,38
3,44
t
(µs)
350
V
VF (100%) =
I F (100%) =
I RRM (100%) =
126
A
-245
0,148
A
μs
t rr
=
Copyright Vincotech
27
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Prec
Erec
tErec
126
A
43,94
4,33
0,30
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
16,39
0,30
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
28
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste
without thermal paste with press-fit pins
with thermal paste
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
30-FT07NIB200SG02-L965F08-/3/
30-PT07NIB200SG02-L965F08Y-/3/
with thermal paste with press-fit pins
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin table [mm]
Pin
1
X
Y
3
0
0
0
0
0
3
0
3
0
Pin
X
Y
Function
DC+2
DC+2
DC+2
DC+2
DC+2
DC+2
GND2
GND2
GND2
GND2
Function
solderpins
70
52
53
54
55
56
Not assembled
36,6 Therm1
36,55 Therm2
2
70
64,2
70,6
70
3
67,5
65
4
18,9
15,9
S11
G11
5
62,5
60
68,55
6
7
52,75
52,75
50,25
50,25
8
9
10
11
12
13
43
43
40,5
3
0
3
DC-2
DC-2
DC-2
14
15
16
17
18
19
20
21
22
40,5
38
0
3
0
3
0
3
0
3
0
DC-2
DC-2
DC-2
DC-1
DC-1
DC-1
DC-1
DC-1
DC-1
38
32
32
29,5
29,5
27
27
press-fitpins
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
19,75
17,25
14,75
12,25
5
0
GND1
GND1
GND1
GND1
DC+1
DC+1
DC+1
DC+1
DC+1
DC+1
G14
0
0
0
3
5
0
2,5
3
0
2,5
0
3
0
0
5,75
5,75
19,45
22,45
S14
Not assembled
19,25 22,85
17,85 19,85
G12
S12
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
G13
S13
2
36
36
36
36
36
36
36
36
36
36
36
36
32
32
4,5
7
9,5
12
14,5
38
40,5
43
45,5
48
50,5
49,9
52,9
Copyright Vincotech
29
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12
IGBT
650 V
200 A
180 A
Buck Switch
T13 , T14
IGBT
650 V
Boost Switch
D11 , D12
D13 , D14
D41,D42,D43,D44
Rt
FWD
FWD
650 V
1200 V
650 V
200 A
150 A
30 A
Buck Diode
Boost Diode
FWD
Sw. Protection Diode
Thermistor
Thermistor
Copyright Vincotech
30
04 Apr. 2017 / Revision 1
30-FT07NIB200SG02-L965F08
30-PT07NIB200SG02-L965F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-xT07NIB200SG02-L965F08x-D1-14
04 Apr. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
04 Apr. 2017 / Revision 1
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