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30-P2126PA075M7-L288F79Y [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
30-P2126PA075M7-L288F79Y
型号： 30-P2126PA075M7-L288F79Y
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总17页 (文件大小：2174K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
1200 V / 75 A  
flow PACK 2  
Features  
flow 2 17 mm housing  
● IGBT M7 technology with low  
improved EMC behavior  
and  
VCEsat  
● Open emitter configuration  
● Compact and low inductive design  
● Builtin NTC  
Press-fit pins  
Solder pins  
Schematic  
Target applications  
● Industrial Drives  
● Power Supply  
● UPS  
Types  
● 30-P2126PA075M7-L288F79Y  
● 30-F2126PA075M7-L288F79  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
1200  
93  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
191  
±20  
175  
A
W
V
Maximum junction temperature  
°C  
Copyright Vincotech  
1
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
1200  
89  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
200  
165  
175  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
Isolation voltage  
-40…(Tjmax - 25)  
Visol  
DC Test Voltage  
tp = 2 s  
4000  
V
Creepage distance  
min. 12,7  
min. 12,7  
> 200  
mm  
mm  
Clearance  
Comparative Tracking Index  
CTI  
Copyright Vincotech  
2
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0075 25  
25  
5,4  
6
6,6  
V
V
1,55  
1,70  
1,75  
2,05  
Collector-emitter saturation voltage  
VCEsat  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
110  
500  
µA  
nA  
Ω
20  
4
Cies  
Coes  
Cres  
Qg  
16000  
480  
Output capacitance  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
190  
15  
600  
75  
490  
nC  
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
0,50  
K/W  
Dynamic  
25  
197  
208  
212  
td(on)  
125  
150  
25  
Turn-on delay time  
29  
tr  
Rise time  
125  
150  
25  
38  
39  
203  
Rgoff = 2 Ω  
Rgon = 2 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
233  
242  
86  
113  
±15  
600  
75  
tf  
111  
5,559  
7,819  
8,496  
5,076  
6,804  
7,285  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 8,5 μC  
= 13,4 μC  
= 15,3 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
3
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
1,82  
1,96  
1,97  
2,1  
VF  
Forward voltage  
100  
125  
150  
V
Thermal  
phase-change  
material  
λ = 3,4 W/mK  
Rth(j-s)  
Thermal resistance junction to sink  
0,58  
K/W  
Dynamic  
25  
75  
77  
78  
IRRM  
125  
150  
25  
Peak recovery current  
A
278  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
432  
459  
ns  
di/dt = 2268 A/μs  
di/dt = 1969 A/μs ±15  
di/dt = 1970 A/μs  
8,539  
13,394  
15,308  
3,195  
5,193  
5,995  
802  
600  
75  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
614  
544  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1486 Ω  
-12  
+14  
200  
2
mW  
mW/K  
K
B(25/50) Tol. ±3%  
B(25/100) Tol. ±3%  
3950  
3998  
B-value  
K
Vincotech NTC Reference  
B
Copyright Vincotech  
4
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
7 V to 17 V in steps of 1 V  
μs  
VGE  
=
Tj:  
Tj =  
°C  
VGE from  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
IC = f(VGE  
)
Z th(j-s) = f(tp)  
100  
I
I
I
I
Z
Z
Z
Z
10-1  
10-2  
10-3  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
0,50  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
4,16E-02  
5,55E-02  
1,25E-01  
2,12E-01  
4,29E-02  
2,08E-02  
4,25E+00  
8,53E-01  
1,69E-01  
3,95E-02  
8,08E-03  
7,43E-04  
Copyright Vincotech  
5
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Z th(j-s) = f(tp)  
100  
Z
Z
Z
Z
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
0,58  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
4,89E-02  
7,07E-02  
2,02E-01  
1,90E-01  
3,24E-02  
3,35E-02  
3,41E+00  
4,06E-01  
7,46E-02  
2,27E-02  
3,47E-03  
4,78E-04  
Copyright Vincotech  
6
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical NTC characteristic  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
7
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
600  
±15  
2
V
V
Ω
Ω
T
j
:
VCE  
VGE  
I C  
=
=
=
600  
±15  
75  
V
V
A
Tj:  
VCE  
VGE  
=
=
=
=
R gon  
R goff  
2
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
600  
±15  
2
V
V
Ω
:
600  
±15  
75  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
8
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C)  
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
600  
±15  
2
°C  
V
150  
600  
±15  
75  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
600  
At  
VCE  
=
V
25 °C  
125 °C  
150 °C  
At  
VCE  
=
600  
V
V
A
25 °C  
125 °C  
150 °C  
±15  
2
V
:
Tj  
VGE  
I C  
=
±15  
75  
:
Tj  
VGE  
R gon  
=
=
Ω
=
Copyright Vincotech  
9
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
600  
±15  
2
V
V
Ω
25 °C  
125 °C  
150 °C  
600  
±15  
75  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
Tj  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
At  
VCE  
=
600  
±15  
2
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
600  
±15  
75  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGE  
R gon  
=
=
VGE  
I C  
=
=
Copyright Vincotech  
10  
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,di rr/dt = f(I c)  
di F/dt,di rr/dt = f(R g)  
diF/dt  
dir r/dt  
t
t
t
t
d
iF  
/
/
dt  
t
t
t
t
i
i
i
i
i
i
i
i
dir r  
dt  
At  
VCE  
=
600  
±15  
2
V
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
600  
±15  
75  
V
25 °C  
125 °C  
150 °C  
V
:
Tj  
V
A
:
Tj  
VGE  
=
=
=
Ω
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj =  
175  
°C  
Ω
R gon  
R goff  
=
=
2
2
Ω
Copyright Vincotech  
11  
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Switching Definitions  
General conditions  
=
=
=
125 °C  
2 Ω  
T j  
Rgon  
R goff  
2 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff)  
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
VGE  
IC  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
76  
V
600  
76  
V
A
A
0,233  
0,913  
μs  
μs  
0,208  
0,556  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
600  
76  
V
600  
76  
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
A
A
0,113  
μs  
0,038  
μs  
tr  
=
Copyright Vincotech  
12  
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Poff  
Eoff  
Eon  
tEoff  
tEon  
P off (100%) =  
Eoff (100%) =  
45,36  
6,80  
0,91  
kW  
mJ  
μs  
P on (100%) =  
Eon (100%) =  
45,36  
7,82  
0,56  
kW  
mJ  
μs  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
VF  
fitted  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
600  
76  
V
A
-77  
0,432  
A
μs  
t rr  
=
Copyright Vincotech  
13  
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr  
)
Turn-on Switching Waveforms & definition of tErec (tErec  
=
integrating time for Erec)  
Qr  
Erec  
IF  
tErec  
Prec  
76  
A
45,36  
5,19  
0,86  
kW  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
13,39  
0,86  
μC  
μs  
mJ  
μs  
t Qr  
=
tErec =  
Copyright Vincotech  
14  
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 17mm housing Press-fit pins  
with thermal paste 17mm housing Press-fit pins  
without thermal paste 17mm housing Solder pins  
with thermal paste 17mm housing Solder pins  
Ordering Code  
30-P2126PA075M7-L288F79Y  
30-P2126PA075M7-L288F79Y-/3/  
30-F2126PA075M7-L288F79  
30-F2126PA075M7-L288F79-/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
Function  
S11  
0,9  
2
0,9  
3
G11  
3
3,9  
0
DC-1  
DC-1  
DC-1  
DC-1  
DC+1  
DC+1  
DC+1  
DC+1  
4
3,9  
2,7  
5,4  
0
5
3,9  
6
6,6  
7
15,2  
15,2  
17,9  
17,9  
0
8
2,7  
0
9
10  
2,7  
11  
12  
13  
26,2  
26,2  
29,2  
0
3
0
S13  
G13  
DC-2  
14  
15  
16  
17  
18  
19  
20  
21  
22  
29,2  
29,2  
31,9  
32,2  
40,5  
40,5  
43,2  
43,2  
51,5  
2,7  
5,4  
0
DC-2  
DC-2  
DC-2  
NTC  
4,05  
0
DC+2  
DC+2  
DC+2  
DC+2  
S15  
2,7  
0
2,7  
0
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
51,5  
54,5  
54,5  
54,5  
57,2  
65,8  
65,8  
68,5  
68,5  
64,7  
61,7  
58,7  
56  
3
0
G15  
DC-3  
DC-3  
DC-3  
DC-3  
DC+3  
DC+3  
DC+3  
DC+3  
G16  
2,7  
5,4  
0
0
2,7  
0
2,7  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
36  
S16  
PH3  
PH3  
53,3  
50,6  
39,4  
36,4  
33,4  
30,7  
28  
PH3  
PH3  
G14  
S14  
PH2  
PH2  
PH2  
25,3  
14,1  
11,1  
8,1  
PH2  
G12  
S12  
PH1  
5,4  
PH1  
2,7  
0
PH1  
PH1  
Copyright Vincotech  
15  
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11 , T12 , T13 ,  
T14 , T15 , T16  
IGBT  
1200 V  
75 A  
Inverter Switch  
D11 , D12 , D13 ,  
D14 , D15 , D16  
FWD  
1200 V  
100 A  
Inverter Diode  
Thermistor  
NTC  
Thermistor  
Copyright Vincotech  
16  
07 Mar. 2019 / Revision 2  
30-P2126PA075M7-L288F79Y  
30-F2126PA075M7-L288F79  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 36  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 2 packages see vincotech.com website.  
Package data  
Package data for flow 2 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
flow2 frame modification  
Added solder pin variant  
30-x2126PA075M7-L288F79x-D2-14  
07 Mar. 2019  
1,15  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
07 Mar. 2019 / Revision 2  

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