30-PT10NAA200S701-PE59F08Y [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;型号: | 30-PT10NAA200S701-PE59F08Y |
厂家: | VINCOTECH |
描述: | Low collector emitter saturation voltage;High speed and smooth switching |
文件: | 总33页 (文件大小:8984K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
30-PT10NAA200S701-PE59F08Y
datasheet
flowANPC 2
950 V / 200 A
Topology features
flow 2 13 mm housing
● Temperature sensor
● Advanced Neutral Point Clamped topology
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
Housing features
● Base isolation: Al2O3
● Convex shaped baseplate for superior thermal contact
● Cu baseplate
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Energy Storage Systems
● Solar Inverters
Types
● 30-PT10NAA200S701-PE59F08Y
Copyright Vincotech
1
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC Switch
VCES
Collector-emitter voltage
950
203
400
256
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC Diode
VRRM
Peak repetitive reverse voltage
950
108
400
192
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch
VCES
Collector-emitter voltage
950
153
400
300
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
DC-Link Diode
VRRM
Peak repetitive reverse voltage
950
108
400
192
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
DC-Link Switch
VCES
Collector-emitter voltage
950
153
400
300
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Neutral Point Diode
VRRM
Peak repetitive reverse voltage
950
108
400
192
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Capacitor (DC)
750
1000
VMAX
Maximum DC voltage
Tj = 125 °C
Tj = 150 °C
V
750
Top
Operation Temperature
-55 ... 150
°C
Copyright Vincotech
3
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
>12,7
>12,7
≥ 600
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00325 25
25
4,15
4,85
5,65
V
V
1,22
1,25
1,26
1,4(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
100
1,5
24600
265
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
110
±15
0
2050
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,37
K/W
AC Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
8
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,5
K/W
Copyright Vincotech
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23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00334 25
25
4,35
5,1
5,85
V
V
1,83
2,06
2,11
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
200
0,75
13000
278
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
40
±15
0
460
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,32
K/W
Dynamic
25
85,83
88,21
89,19
13,34
15,07
15,31
101,78
131,72
139,97
19,65
41,02
50,59
7,2
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
Rise time
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
750
170
tf
125
150
25
ns
QrFWD=4,95 µC
QrFWD=11,2 µC
QrFWD=13,4 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
9,86
mWs
mWs
10,58
5,22
Eoff
125
150
9,58
10,81
Copyright Vincotech
6
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
8
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,5
K/W
25
104,12
156,48
171,85
110,17
150,99
166,05
4,95
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=6941 A/µs
di/dt=7416 A/µs
di/dt=7571 A/µs
Qr
Recovered charge
±15
750
170
125
150
25
11,2
μC
13,4
1,88
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
4,69
mWs
A/µs
5,74
2387,68
1344,81
1455,48
(dirf/dt)max
125
150
Copyright Vincotech
7
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
DC-Link Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00334 25
25
4,35
5,1
5,85
V
V
1,83
2,06
2,11
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
200
0,75
13000
278
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
40
±15
0
460
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,32
K/W
25
260,37
258,01
257,36
38,04
40,64
41,29
189,81
221,15
229,97
20,63
41,58
49,96
12,71
15,81
16,54
5,16
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
750
170
tf
125
150
25
ns
QrFWD=4,32 µC
QrFWD=10,47 µC
QrFWD=12,58 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
8,57
9,48
Copyright Vincotech
8
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Vr = 950 V
25
8
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,5
K/W
Dynamic
25
81,59
123,07
133,99
127,76
182,08
197,89
4,32
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3481 A/µs
di/dt=3450 A/µs
di/dt=3656 A/µs
Qr
Recovered charge
±15
750
170
125
150
25
10,47
μC
12,58
1,35
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
3,66
mWs
A/µs
4,58
1504,45
1171,27
1258,98
(dirf/dt)max
125
150
Copyright Vincotech
9
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
750
0,1
V
Tolerance
-5
5
%
%
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
AC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
200
10
-1
150
100
50
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
=
=
250
59
μs
D =
tp / T
0,371
25 °C
VCE
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,29E-02
9,87E-02
1,71E-01
2,32E-02
1,51E-02
2,66E+00
3,54E-01
4,59E-02
6,22E-03
5,38E-04
Copyright Vincotech
11
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
AC Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
AC Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,495
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,54E-02
1,07E-01
1,95E-01
1,05E-01
3,26E-02
3,24E+00
4,54E-01
5,74E-02
1,25E-02
1,12E-03
Copyright Vincotech
13
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Neutral Point Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
10
tp(s)
V
GE(V)
tp
=
250
8
μs
D =
tp / T
0,316
25 °C
VCE
=
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,47E-02
8,02E-02
1,36E-01
2,02E-02
1,51E-02
2,21E+00
2,58E-01
3,99E-02
4,97E-03
4,41E-04
Copyright Vincotech
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23 Aug. 2022 / Revision 1
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datasheet
Neutral Point Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
DC-Link Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,495
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,54E-02
1,07E-01
1,95E-01
1,05E-01
3,26E-02
3,24E+00
4,54E-01
5,74E-02
1,25E-02
1,12E-03
Copyright Vincotech
16
23 Aug. 2022 / Revision 1
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datasheet
DC-Link Switch Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 17.
IGBT
figure 18.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
10
tp(s)
V
GE(V)
tp
=
250
8
μs
D =
tp / T
0,316
25 °C
VCE
=
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,47E-02
8,02E-02
1,36E-01
2,02E-02
1,51E-02
2,21E+00
2,58E-01
3,99E-02
4,97E-03
4,41E-04
Copyright Vincotech
17
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
DC-Link Switch Characteristics
figure 19.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
18
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Neutral Point Diode Characteristics
figure 20.
FWD
figure 21.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,495
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,54E-02
1,07E-01
1,95E-01
1,05E-01
3,26E-02
3,24E+00
4,54E-01
5,74E-02
1,25E-02
1,12E-03
Copyright Vincotech
19
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Thermistor Characteristics
figure 22.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
20
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Neutral Point Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
750
±15
2
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Rgon
Rgoff
Ω
Ω
2
figure 25.
FWD
figure 26.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
2
V
V
Ω
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Neutral Point Switching Characteristics
figure 27.
IGBT
figure 28.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
-1
10
tf
tr
tf
tr
-2
10
-2
10
-3
10
-3
10
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
750
±15
2
°C
150
750
±15
170
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
2
figure 29.
FWD
figure 30.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
2
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
22
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Neutral Point Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
Qr
5,0
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
2
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 33.
FWD
figure 34.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
50
25
0
0
0
50
100
150
200
250
300
350
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
2
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
23
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Neutral Point Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
17500
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
15000
12500
10000
7500
5000
2500
0
0
50
100
150
200
250
300
350
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
2
V
V
Ω
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 37.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
2
2
Ω
Ω
Copyright Vincotech
24
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
DC-Link Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
0
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
750
±15
8
V
V
Ω
Ω
125 °C
150 °C
750
±15
170
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 40.
FWD
figure 41.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
8
V
V
Ω
125 °C
150 °C
750
±15
170
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
25
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
DC-Link Switching Characteristics
figure 42.
IGBT
figure 43.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tr
-1
10
-1
10
tr
tf
tf
-2
10
-2
10
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
750
±15
8
°C
150
750
±15
170
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
8
figure 44.
FWD
figure 45.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
8
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
26
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
DC-Link Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
Qr
5,0
Qr
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
8
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 48.
FWD
figure 49.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
225
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
IRM
50
25
25
0
0
0
50
100
150
200
250
300
350
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
8
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
27
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
DC-Link Switching Characteristics
figure 50.
FWD
figure 51.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
50
100
150
200
250
300
350
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
750
±15
8
V
V
125 °C
150 °C
750
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 52.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
28
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Switching Definitions
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 55.
IGBT
figure 56.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
29
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Switching Definitions
figure 57.
FWD
figure 58.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
30
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-PT10NAA200S701-PE59F08Y
30-PT10NAA200S701-PE59F08Y-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
43,4
40,7
38
36,5
36,5
36,5
36,5
33,8
36,5
36,5
36,5
26,45
23,45
23,45
23,45
5,55
2,7
Ph1
Ph1
Ph1
Ph2
Ph2
Ph2
Ph2
Ph2
G14
S14
N
1,5
2
4,2
0
DC-
3
6,9
0
DC-
32,5
32,5
29,8
27,1
24,4
11,1
11,1
16,25
18,95
0
4
9,6
0
DC-
5
12,3
21,7
24,4
27,1
29,8
32,5
38
0
DC-
6
0
GND2
GND2
GND2
GND2
GND2
GND1
GND1
GND1
GND1
GND1
DC+
7
0
8
0
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
0
0
N
41,25
44,5
47,75
47,75
57,15
59,85
62,55
65,25
67,95
70,5
66,45
48,8
46,1
0
G12
S12
S15
G15
P
0
0
0
20,5
23,5
46,75
46,75
38
19,2
19,2
19,6
16,6
5,55
2,7
2,7
0
0
DC+
P
0
DC+
G16
S16
S13
G13
S11
G11
0
DC+
38
0
DC+
48,8
48,8
58,5
61,5
33,8
30,8
19,15
19,15
33,5
36,5
36,5
36,5
Therm2
Therm1
Ph1
Ph1
Copyright Vincotech
31
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Pinout
DC+
16,17,18,19,20
S1
S2
T11
D11
G11
48
GND2
6,7,8,9,10
Ph2
28,29,30,31,32
S11
47
C10
P
T15
T14
D15
D13
41,42
T13
G15
40
G14
33
T16
D16
D14
S14
34
G16
43
G13
46
S15
39
C20
N
35,36
S16
44
S13
45
T12
GND1
11,12,13,14,15
Ph1
23,24,25,26,27
D12
G12
37
S12
38
Rt
21
22
Therm1
DC-
1,2,3,4,5
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T13, T14
IGBT
FWD
950 V
950 V
950 V
950 V
950 V
950 V
1000 V
200 A
200 A
200 A
200 A
200 A
200 A
AC Switch
AC Diode
D13, D14
T15, T16
D12, D11
T11, T12
D16, D15
C10, C20
Rt
IGBT
Neutral Point Switch
DC-Link Diode
DC-Link Switch
Neutral Point Diode
Capacitor (DC)
Thermistor
FWD
IGBT
FWD
Capacitor
Thermistor
Copyright Vincotech
32
23 Aug. 2022 / Revision 1
30-PT10NAA200S701-PE59F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-PT10NAA200S701-PE59F08Y-D1-14
23 Aug. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
33
23 Aug. 2022 / Revision 1
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