30-PT10NAA200S701-PE59F08Y [VINCOTECH]

Low collector emitter saturation voltage;High speed and smooth switching;
30-PT10NAA200S701-PE59F08Y
型号: 30-PT10NAA200S701-PE59F08Y
厂家: VINCOTECH    VINCOTECH
描述:

Low collector emitter saturation voltage;High speed and smooth switching

文件: 总33页 (文件大小:8984K)
中文:  中文翻译
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30-PT10NAA200S701-PE59F08Y  
datasheet  
flowANPC 2  
950 V / 200 A  
Topology features  
flow 2 13 mm housing  
● Temperature sensor  
● Advanced Neutral Point Clamped topology  
Component features  
● Low collector emitter saturation voltage  
● High speed and smooth switching  
Housing features  
● Base isolation: Al2O3  
● Convex shaped baseplate for superior thermal contact  
● Cu baseplate  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
Schematic  
● Reliable cold welding connection  
Target applications  
● Energy Storage Systems  
● Solar Inverters  
Types  
● 30-PT10NAA200S701-PE59F08Y  
Copyright Vincotech  
1
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
AC Switch  
VCES  
Collector-emitter voltage  
950  
203  
400  
256  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
AC Diode  
VRRM  
Peak repetitive reverse voltage  
950  
108  
400  
192  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Neutral Point Switch  
VCES  
Collector-emitter voltage  
950  
153  
400  
300  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
DC-Link Diode  
VRRM  
Peak repetitive reverse voltage  
950  
108  
400  
192  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
DC-Link Switch  
VCES  
Collector-emitter voltage  
950  
153  
400  
300  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Neutral Point Diode  
VRRM  
Peak repetitive reverse voltage  
950  
108  
400  
192  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Capacitor (DC)  
750  
1000  
VMAX  
Maximum DC voltage  
Tj = 125 °C  
Tj = 150 °C  
V
750  
Top  
Operation Temperature  
-55 ... 150  
°C  
Copyright Vincotech  
3
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
>12,7  
>12,7  
≥ 600  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
4
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
AC Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00325 25  
25  
4,15  
4,85  
5,65  
V
V
1,22  
1,25  
1,26  
1,4(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
100  
1,5  
24600  
265  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
110  
±15  
0
2050  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,37  
K/W  
AC Diode  
Static  
25  
2,1  
2,64  
2,44  
2,36  
2,8(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 950 V  
25  
8
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,5  
K/W  
Copyright Vincotech  
5
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Neutral Point Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00334 25  
25  
4,35  
5,1  
5,85  
V
V
1,83  
2,06  
2,11  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
200  
0,75  
13000  
278  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
40  
±15  
0
460  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,32  
K/W  
Dynamic  
25  
85,83  
88,21  
89,19  
13,34  
15,07  
15,31  
101,78  
131,72  
139,97  
19,65  
41,02  
50,59  
7,2  
td(on)  
Turn-on delay time  
125  
150  
25  
ns  
ns  
tr  
Rise time  
125  
150  
25  
Rgon = 2 Ω  
Rgoff = 2 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
750  
170  
tf  
125  
150  
25  
ns  
QrFWD=4,95 µC  
QrFWD=11,2 µC  
QrFWD=13,4 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
9,86  
mWs  
mWs  
10,58  
5,22  
Eoff  
125  
150  
9,58  
10,81  
Copyright Vincotech  
6
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
DC-Link Diode  
Static  
25  
2,1  
2,64  
2,44  
2,36  
2,8(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 950 V  
25  
8
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,5  
K/W  
25  
104,12  
156,48  
171,85  
110,17  
150,99  
166,05  
4,95  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=6941 A/µs  
di/dt=7416 A/µs  
di/dt=7571 A/µs  
Qr  
Recovered charge  
±15  
750  
170  
125  
150  
25  
11,2  
μC  
13,4  
1,88  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
4,69  
mWs  
A/µs  
5,74  
2387,68  
1344,81  
1455,48  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
7
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
DC-Link Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00334 25  
25  
4,35  
5,1  
5,85  
V
V
1,83  
2,06  
2,11  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
200  
0,75  
13000  
278  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
40  
±15  
0
460  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,32  
K/W  
25  
260,37  
258,01  
257,36  
38,04  
40,64  
41,29  
189,81  
221,15  
229,97  
20,63  
41,58  
49,96  
12,71  
15,81  
16,54  
5,16  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
750  
170  
tf  
125  
150  
25  
ns  
QrFWD=4,32 µC  
QrFWD=10,47 µC  
QrFWD=12,58 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
8,57  
9,48  
Copyright Vincotech  
8
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Neutral Point Diode  
Static  
25  
2,1  
2,64  
2,44  
2,36  
2,8(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Vr = 950 V  
25  
8
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,5  
K/W  
Dynamic  
25  
81,59  
123,07  
133,99  
127,76  
182,08  
197,89  
4,32  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=3481 A/µs  
di/dt=3450 A/µs  
di/dt=3656 A/µs  
Qr  
Recovered charge  
±15  
750  
170  
125  
150  
25  
10,47  
μC  
12,58  
1,35  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
3,66  
mWs  
A/µs  
4,58  
1504,45  
1171,27  
1258,98  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
9
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Capacitor (DC)  
Static  
DC bias voltage =  
0 V  
C
Capacitance  
25  
25  
750  
0,1  
V
Tolerance  
-5  
5
%
%
Dissipation factor  
f = 1 kHz  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
10  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
AC Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,00  
0,25  
0,50  
0,75  
1,00  
1,25  
1,50  
1,75  
2,00  
0,00  
0,25  
0,50  
0,75  
1,00  
1,25  
1,50  
1,75  
2,00  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
200  
10  
-1  
150  
100  
50  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
1
2
3
4
5
6
7
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
59  
μs  
D =  
tp / T  
0,371  
25 °C  
VCE  
V
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,29E-02  
9,87E-02  
1,71E-01  
2,32E-02  
1,51E-02  
2,66E+00  
3,54E-01  
4,59E-02  
6,22E-03  
5,38E-04  
Copyright Vincotech  
11  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
AC Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
12  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
AC Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,495  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,54E-02  
1,07E-01  
1,95E-01  
1,05E-01  
3,26E-02  
3,24E+00  
4,54E-01  
5,74E-02  
1,25E-02  
1,12E-03  
Copyright Vincotech  
13  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Neutral Point Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
100  
10  
-1  
75  
50  
25  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
8
μs  
D =  
tp / T  
0,316  
25 °C  
VCE  
=
V
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,47E-02  
8,02E-02  
1,36E-01  
2,02E-02  
1,51E-02  
2,21E+00  
2,58E-01  
3,99E-02  
4,97E-03  
4,41E-04  
Copyright Vincotech  
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23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Neutral Point Switch Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
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23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
DC-Link Diode Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,495  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,54E-02  
1,07E-01  
1,95E-01  
1,05E-01  
3,26E-02  
3,24E+00  
4,54E-01  
5,74E-02  
1,25E-02  
1,12E-03  
Copyright Vincotech  
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23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
DC-Link Switch Characteristics  
figure 15.  
IGBT  
figure 16.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
600  
600  
VGE  
:
7 V  
8 V  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
=
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 17.  
IGBT  
figure 18.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
100  
10  
-1  
75  
50  
25  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
250  
8
μs  
D =  
tp / T  
0,316  
25 °C  
VCE  
=
V
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,47E-02  
8,02E-02  
1,36E-01  
2,02E-02  
1,51E-02  
2,21E+00  
2,58E-01  
3,99E-02  
4,97E-03  
4,41E-04  
Copyright Vincotech  
17  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
DC-Link Switch Characteristics  
figure 19.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
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23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Neutral Point Diode Characteristics  
figure 20.  
FWD  
figure 21.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,495  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,54E-02  
1,07E-01  
1,95E-01  
1,05E-01  
3,26E-02  
3,24E+00  
4,54E-01  
5,74E-02  
1,25E-02  
1,12E-03  
Copyright Vincotech  
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23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Thermistor Characteristics  
figure 22.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
20  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Neutral Point Switching Characteristics  
figure 23.  
IGBT  
figure 24.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
22,5  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eoff  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
5,0  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
2
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Rgon  
Rgoff  
Ω
Ω
2
figure 25.  
FWD  
figure 26.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
2
V
V
Ω
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
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23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Neutral Point Switching Characteristics  
figure 27.  
IGBT  
figure 28.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
td(off)  
td(on)  
-1  
10  
-1  
10  
tf  
tr  
tf  
tr  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
750  
±15  
2
°C  
150  
750  
±15  
170  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
V
V
Ω
Ω
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
A
2
figure 29.  
FWD  
figure 30.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
2
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
22  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Neutral Point Switching Characteristics  
figure 31.  
FWD  
figure 32.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
Qr  
5,0  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
2
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 33.  
FWD  
figure 34.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
200  
175  
150  
125  
100  
75  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
25  
0
0
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
2
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
23  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Neutral Point Switching Characteristics  
figure 35.  
FWD  
figure 36.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
17500  
20000  
17500  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
15000  
12500  
10000  
7500  
5000  
2500  
0
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
2
V
V
Ω
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 37.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
2
2
Ω
Ω
Copyright Vincotech  
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23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
DC-Link Switching Characteristics  
figure 38.  
IGBT  
figure 39.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
0
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
8
V
V
Ω
Ω
125 °C  
150 °C  
750  
±15  
170  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
8
figure 40.  
FWD  
figure 41.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
8
V
V
Ω
125 °C  
150 °C  
750  
±15  
170  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Copyright Vincotech  
25  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
DC-Link Switching Characteristics  
figure 42.  
IGBT  
figure 43.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
td(on)  
td(off)  
tr  
-1  
10  
-1  
10  
tr  
tf  
tf  
-2  
10  
-2  
10  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
Rg(Ω)  
IC(A)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
750  
±15  
8
°C  
150  
750  
±15  
170  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
Ω
Ω
V
V
A
VGE  
Rgon  
Rgoff  
VGE  
IC  
8
figure 44.  
FWD  
figure 45.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
trr  
trr  
trr  
trr  
trr  
trr  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
8
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
26  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
DC-Link Switching Characteristics  
figure 46.  
FWD  
figure 47.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
5,0  
Qr  
5,0  
Qr  
2,5  
2,5  
0,0  
0,0  
0
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
8
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
figure 48.  
FWD  
figure 49.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
150  
125  
100  
75  
225  
200  
175  
150  
125  
100  
75  
IRM  
IRM  
IRM  
IRM  
IRM  
50  
IRM  
50  
25  
25  
0
0
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
8
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
V
Ω
Copyright Vincotech  
27  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
DC-Link Switching Characteristics  
figure 50.  
FWD  
figure 51.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
4500  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
4000  
dirr/dt ──────  
3500  
3000  
2500  
2000  
1500  
1000  
500  
0
0
50  
100  
150  
200  
250  
300  
350  
IC(A)  
0
5
10  
15  
20  
25  
30  
35  
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
750  
±15  
8
V
V
125 °C  
150 °C  
750  
±15  
170  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Ω
figure 52.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
450  
IC MAX  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
8
8
Ω
Copyright Vincotech  
28  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Switching Definitions  
figure 53.  
IGBT  
figure 54.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 55.  
IGBT  
figure 56.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
29  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Switching Definitions  
figure 57.  
FWD  
figure 58.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
30  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Ordering Code  
Marking  
Version  
Ordering Code  
Without thermal paste  
30-PT10NAA200S701-PE59F08Y  
30-PT10NAA200S701-PE59F08Y-/3/  
With thermal paste (3,4 W/mK, PSX-P7)  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
Function  
DC-  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
43,4  
40,7  
38  
36,5  
36,5  
36,5  
36,5  
33,8  
36,5  
36,5  
36,5  
26,45  
23,45  
23,45  
23,45  
5,55  
2,7  
Ph1  
Ph1  
Ph1  
Ph2  
Ph2  
Ph2  
Ph2  
Ph2  
G14  
S14  
N
1,5  
2
4,2  
0
DC-  
3
6,9  
0
DC-  
32,5  
32,5  
29,8  
27,1  
24,4  
11,1  
11,1  
16,25  
18,95  
0
4
9,6  
0
DC-  
5
12,3  
21,7  
24,4  
27,1  
29,8  
32,5  
38  
0
DC-  
6
0
GND2  
GND2  
GND2  
GND2  
GND2  
GND1  
GND1  
GND1  
GND1  
GND1  
DC+  
7
0
8
0
9
0
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
0
0
N
41,25  
44,5  
47,75  
47,75  
57,15  
59,85  
62,55  
65,25  
67,95  
70,5  
66,45  
48,8  
46,1  
0
G12  
S12  
S15  
G15  
P
0
0
0
20,5  
23,5  
46,75  
46,75  
38  
19,2  
19,2  
19,6  
16,6  
5,55  
2,7  
2,7  
0
0
DC+  
P
0
DC+  
G16  
S16  
S13  
G13  
S11  
G11  
0
DC+  
38  
0
DC+  
48,8  
48,8  
58,5  
61,5  
33,8  
30,8  
19,15  
19,15  
33,5  
36,5  
36,5  
36,5  
Therm2  
Therm1  
Ph1  
Ph1  
Copyright Vincotech  
31  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Pinout  
DC+  
16,17,18,19,20  
S1  
S2  
T11  
D11  
G11  
48  
GND2  
6,7,8,9,10  
Ph2  
28,29,30,31,32  
S11  
47  
C10  
P
T15  
T14  
D15  
D13  
41,42  
T13  
G15  
40  
G14  
33  
T16  
D16  
D14  
S14  
34  
G16  
43  
G13  
46  
S15  
39  
C20  
N
35,36  
S16  
44  
S13  
45  
T12  
GND1  
11,12,13,14,15  
Ph1  
23,24,25,26,27  
D12  
G12  
37  
S12  
38  
Rt  
21  
22  
Therm1  
DC-  
1,2,3,4,5  
Therm2  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T13, T14  
IGBT  
FWD  
950 V  
950 V  
950 V  
950 V  
950 V  
950 V  
1000 V  
200 A  
200 A  
200 A  
200 A  
200 A  
200 A  
AC Switch  
AC Diode  
D13, D14  
T15, T16  
D12, D11  
T11, T12  
D16, D15  
C10, C20  
Rt  
IGBT  
Neutral Point Switch  
DC-Link Diode  
DC-Link Switch  
Neutral Point Diode  
Capacitor (DC)  
Thermistor  
FWD  
IGBT  
FWD  
Capacitor  
Thermistor  
Copyright Vincotech  
32  
23 Aug. 2022 / Revision 1  
30-PT10NAA200S701-PE59F08Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 36  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 2 packages see vincotech.com website.  
Package data  
Package data for flow 2 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
30-PT10NAA200S701-PE59F08Y-D1-14  
23 Aug. 2022  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
33  
23 Aug. 2022 / Revision 1  

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