70-W212NMA400SC-M209P [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 70-W212NMA400SC-M209P |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总28页 (文件大小：825K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W212NMA400SC-M209P
datasheet
VINcoMNPC X4
1200 V/400 A
Features
VINco X4 housing
● Mixed voltage NPC
● Low inductive
● High power screw interface
● Integrated DC-snubber capacitors
Target Applications
● Solar inverter
● UPS
Schematic
● High speed motor drive
Types
● 70-W212NMA400SC-M209P
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
half bridge IGBT ( T1 , T4 )
Collector-emitter break down voltage
DC collector current
VCE
IC
ICpulse
Ptot
1200
V
A
Th=80°C
Tc=80°C
338
439
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
1200
A
Th=80°C
Tc=80°C
729
W
V
1104
VGE
±20
tSC
Tj≤150°C
10
µs
V
Short circuit ratings
VCC
VGE=15V
800
VCE max = 1200V
Tvj max= 150°C
Icmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
800
175
A
Tjmax
°C
neutral point FWD ( D2 , D3 )
Peak Repetitive Reverse Voltage
DC forward current
Tj=25°C
VRRM
IF
600
V
A
A
Th=80°C
Tc=80°C
309
415
Tj=Tjmax
Surge forward current
IFSM
890
3960
800
tp = 10 ms, sine halfwave
Tvj < 150°C
I2t
A2s
A
I2t-value
IFRM
tP = 1 ms
Tj=Tjmax
Tvj < 150°C
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
Th=80°C
Tc=80°C
421
637
Ptot
W
°C
Tjmax
175
copyright by Vincotech
1
Revision: 7
70-W212NMA400SC-M209P
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
neutral point IGBT ( T2 , T3 )
Collector-emitter break down voltage
DC collector current
VCE
IC
600
V
A
Th=80°C
Tc=80°C
329
430
Tj=Tjmax
ICpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
1200
A
Th=80°C
Tc=80°C
574
870
W
V
±20
tSC
Tj≤150°C
6
µs
V
Short circuit ratings
VCC
VGE=15V
360
VCE max = 1200V
Tvj max= 150°C
Icmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
800
175
A
Tjmax
°C
half bridge FWD ( D1 , D4 )
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj=25°C
1200
V
A
A
Th=80°C
Tc=80°C
270
356
Tj=Tjmax
Surge forward current
IFSM
2200
6052
1200
tp=10ms , sin 180°
Tj=150°C
I2t
A2s
A
I2t-value
IFRM
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
Th=80°C
Tc=80°C
540
818
Ptot
W
°C
Tjmax
175
DC link Capacitor
VMAX
Max.DC voltage
Tc=100°C
630
V
General Module Properties
Material of module baseplate
Material of internal isulation
Cu
Al2O3
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Vis
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright by Vincotech
2
Revision: 7
70-W212NMA400SC-M209P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
VGE [V] or
VGS [V]
Tj
Min
Max
half bridge IGBT ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. FWD
Gate-emitter leakage current
Integrated Gate resistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,4
VGE(th) VCE=VGE
0,0152
400
V
V
1,5
1,97
2,23
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,6
1200
0
mA
nA
ꢀ
3000
20
1,88
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
235
247
46
Turn-on delay time
Rise time
55
ns
292
354
55
td(off)
tf
Turn-off delay time
Rgoff=1 ꢀ
±15
350
400
Rgon=1 ꢀ
Fall time
92
7,95
12,30
13,25
22,08
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
24600
1620
1380
2030
0,13
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
960
400
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
0,09
neutral point FWD ( D2 , D3 )
FWD forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,2
1,67
1,56
204
262
183
295
17
2,2
VF
IRRM
trr
400
400
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Rgon=1 ꢀ
±15
350
µC
33
di(rec)max
/dt
3129
1705
3,78
7,44
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,23
K/W
0,15
neutral point IGBT ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,2
VGE(th) VCE=VGE
0,0064
400
V
V
1,56
1,80
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,1
600
0
mA
nA
ꢀ
3000
20
0,5
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
201
204
29
Rise time
32
ns
248
272
71
td(off)
Turn-off delay time
Rgoff=1 ꢀ
±15
350
400
Rgon=1 ꢀ
tf
Fall time
88
3,93
5,61
10,49
14,07
Eon
Eoff
Cies
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
24640
1536
732
Coss
Crss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
QGate
RthJH
RthJC
±15
480
400
2480
0,17
0,11
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
copyright by Vincotech
3
Revision: 7
70-W212NMA400SC-M209P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
VGE [V] or
VGS [V]
Tj
Min
Max
half bridge FWD ( D1 , D4 )
FWD forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
2,29
2,37
3
VF
Ir
400
400
V
ꢁA
480
Reverse leakage current
1200
350
410
521
63
149
24
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
Qrr
Reverse recovered charge
Rgon=1 ꢀ
±15
µC
49
di(rec)max
/dt
18915
15110
5,79
12,71
Peak rate of fall of recovery current
Reverse recovery energy
A/µs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,18
K/W
0,12
DC link Capacitor
C value
C
2 * 0,68
26/2
µF
nH
Stray inductance of on board capacitors
Series resistance of on board capacitors
ESL
ESR
14/2
mꢀ
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
∆R/R R100=1486 ꢀ
-5
5
P
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
Module Properties
LsCE
LsCE
Rcc'1+EE'
M
Module inductance (from chips to PCB)
5
3
nH
nH
mꢀ
Nm
Nm
Nm
g
Module inductance (from PCB to PCB using Intercon board)
Tc=25°C, per switch
Resistance of Intercon boards (from PCB to PCB using Intercon board)
1,5
Screw M4 - mounting according to valid application note
FSWB1-4TY-M-*-HI
Screw M5 - mounting according to valid application note
FSWB1-4TY-M-*-HI
Screw M6 - mounting according to valid application note
FSWB1-4TY-M-*-HI
Mounting torque
Mounting torque
Terminal connection torque
Weight
2
4
2,2
6
M
M
2,5
5
G
710
copyright by Vincotech
4
Revision: 7
70-W212NMA400SC-M209P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 1
IGBT
Figure 2
Typical output characteristics
IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1600
1600
1400
1200
1000
800
1400
1200
1000
800
600
600
400
400
200
200
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
tp =
tp =
350
25
ꢁs
350
125
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
8 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
500
1800
1500
1200
900
600
300
0
400
300
200
100
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
Tj = 25°C
0
0
0
0,5
1
1,5
2
2,5
3
2
4
6
8
10
12
VGE (V)
VF (V)
At
At
tp =
tp =
350
10
ꢁs
350
ꢁs
VCE
=
V
copyright by Vincotech
5
Revision: 7
70-W212NMA400SC-M209P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
40
30
20
10
0
40
30
20
10
0
Eon High T
Eoff High T
Eon Low T
Eon High T
Eoff Low T
Eoff High T
Eoff Low T
Eon Low T
0
200
400
600
800
0
2
4
6
8
10
I C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
350
±15
1
350
±15
400
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
1
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
10
10
Erec High T
8
8
6
6
Erec High T
Erec Low T
4
4
Erec Low T
2
2
0
0
0
200
400
600
800
0
2
4
6
8
10
I C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/125
350
±15
1
°C
V
25/125
350
°C
V
V
A
=
=
=
=
V
±15
Rgon
=
ꢀ
400
copyright by Vincotech
6
Revision: 7
70-W212NMA400SC-M209P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
1,00
tdoff
tdon
tdoff
tdon
tf
tf
0,10
0,10
0,01
0,00
tr
tr
0,01
0,00
0
2
4
6
8
10
0
200
400
600
800
I
C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
350
±15
1,0
°C
V
125
350
±15
400
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
1,0
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,4
0,3
0,2
0,1
0,0
0,5
trr High T
trr High T
0,4
0,3
0,2
0,1
trr Low T
trr Low T
0,0
0
2
4
6
8
10
0
200
400
600
800
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
V
25/125
350
°C
V
A
V
=
=
VR =
IF =
V
400
Rgon
=
VGE =
ꢀ
±15
copyright by Vincotech
7
Revision: 7
70-W212NMA400SC-M209P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
50
40
30
20
10
0
40
Qrr High T
Qrr High T
30
20
10
Qrr Low T
Qrr Low T
0
0
2
4
6
8
10
0
200
400
600
800
I
C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
V
25/125
350
°C
V
A
V
=
=
VR =
IF =
V
400
Rgon
=
VGE =
ꢀ
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
350
400
300
200
100
0
300
250
200
150
100
50
IRRM High T
IRRM Low T
IRRM High T
IRRM Low T
0
0
2
4
6
8
10
0
200
400
600
800
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
V
25/125
°C
V
A
V
=
=
VR =
350
400
±15
IF =
V
Rgon
=
VGE =
ꢀ
copyright by Vincotech
8
Revision: 7
70-W212NMA400SC-M209P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
10000
12000
dIrec/dt T
dIrec/dt T
dI0/dt T
dI0/dt T
10000
8000
6000
4000
2000
8000
6000
4000
2000
0
0
0
0
200
400
600
800
2
4
6
8
10
I
C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
25/125
350
°C
V
A
V
=
=
VR =
V
V
ꢀ
IF =
VGE
400
Rgon
=
=
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
10-2
10-2
0,1
0,1
0,05
0,05
0,02
0,01
0,02
0,01
0,005
0.000
0,005
0.000
10-3
10-3
102
10-5
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
102
At
At
tp / T
0,13
tp / T
0,23
D =
D =
RthJH
=
RthJH =
K/W
IGBT thermal model values
K/W
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,06
Tau (s)
2,5E+00
R (C/W)
0,05
Tau (s)
5,2E+00
0,03
4,7E-01
3,9E-02
1,2E-02
1,2E-03
0,07
1,1E+00
2,0E-01
4,6E-02
1,7E-02
0,03
0,02
0,01
0,06
0,00
0,02
copyright by Vincotech
9
Revision: 7
70-W212NMA400SC-M209P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
1400
1200
1000
800
600
400
200
0
500
400
300
200
100
0
T h (
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
800
600
400
200
0
500
400
300
200
100
0
0
50
100
150
200
T h (
o C)
T h (
o C)
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright by Vincotech
10
Revision: 7
70-W212NMA400SC-M209P
datasheet
Buck
half bridge IGBT and neutral point FWD
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(Qg)
20
18
16
14
12
10
8
103
240V
960V
102
101
100
6
4
10-1
2
0
0
400
800
A
1200
1600
2000
2400
Q g (nC)
2800
102
103
VCE (V)
101
100
At
At
IC
=
D =
Th =
400
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
Figure 27
Reverse bias safe operating area
IGBT
IC = f(VCE
1000
)
ICMAX
800
600
400
200
0
0
200
400
600
800
1000
1200
1400
V
CE (V)
At
Tj =
Tjmax-25
ºC
3 level switching
Uccminus=Uccplus
Switching mode :
copyright by Vincotech
11
Revision: 7
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT and half bridge FWD
Figure 1
IGBT
Figure 2
Typical output characteristics
IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1800
1800
1500
1200
900
1500
1200
900
600
600
300
300
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
tp =
tp =
350
25
ꢁs
350
125
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
8 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
500
1600
1200
800
400
0
Tj = 25°C
400
300
200
100
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
2
4
6
8
10
12
0
1
2
3
4
5
VGE (V)
VF (V)
At
At
tp =
tp =
350
0
ꢁs
350
ꢁs
VCE
=
V
copyright by Vincotech
12
Revision: 7
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT and half bridge FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
25
20
15
10
5
40
30
20
10
0
Eon High T
Eon Low T
Eoff High T
Eoff Low T
Eoff High T
Eoff Low T
Eon High T
Eon Low T
0
0
2
4
6
8
10
0
200
400
600
800
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/125
350
±15
1
°C
V
25/125
350
°C
V
V
A
=
=
=
=
V
±15
Rgon
Rgoff
=
=
IC =
ꢀ
ꢀ
400
1
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
20
15
10
5
15
12
9
Erec High T
Erec High T
Erec Low T
6
Erec Low T
3
0
0
0
200
400
600
800
0
2
4
6
8
10
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/125
350
±15
1
°C
V
25/125
350
°C
V
V
A
=
=
=
=
V
±15
Rgon
=
IC =
ꢀ
400
copyright by Vincotech
13
Revision: 7
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT and half bridge FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
tdon
tf
0,1
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
2
4
6
8
10
0
200
400
600
800
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
125
350
±15
1
°C
V
125
350
±15
400
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
IC =
ꢀ
ꢀ
1
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,2
0,2
0,1
0,1
0,0
0,8
trr High T
trr High T
0,6
0,4
0,2
trr Low T
trr Low T
0
0
2
4
6
8
10
0
200
400
600
800
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
V
25/125
°C
V
A
V
=
=
VR =
350
400
±15
IF =
V
Rgon
=
VGE =
ꢀ
copyright by Vincotech
14
Revision: 7
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT and half bridge FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
75
60
45
30
15
0
60
Qrr High T
50
40
30
20
10
Qrr High T
Qrr Low T
Qrr Low T
0
0
0
200
400
600
800
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
V
25/125
°C
V
A
V
=
VR =
350
400
±15
=
IF =
V
Rgon
=
VGE =
ꢀ
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
600
500
400
300
200
100
0
600
IRRM High T
500
400
300
200
100
IRRM Low T
IRRM High T
IRRM Low T
0
0
2
4
6
8
10
0
200
400
600
800
I
C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
V
25/125
°C
V
A
V
=
=
VR =
350
400
±15
IF =
V
Rgon
=
VGE =
ꢀ
copyright by Vincotech
15
Revision: 7
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT and half bridge FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
25000
25000
dIrec/dt T
dIrec/dt T
dI0/dt T
dI0/dt T
20000
20000
15000
10000
5000
15000
10000
5000
0
0
0
2
4
6
8
10
0
200
400
600
800
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
1
°C
25/125
350
°C
V
A
V
=
=
VR =
V
V
ꢀ
IF =
VGE
400
Rgon
=
=
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
D = 0,5
10-2
10-2
0,2
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100
101
102
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
102
At
At
D =
tp / T
0,17
D =
tp / T
0,18
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
IGBT thermal model values
Tau (s)
FWD thermal model values
FWD thermal model values
Tau (s)
R (C/W)
0,03
R (C/W)
0,02
8,9E+00
2,2E+00
3,7E-01
4,3E-02
1,1E-02
1,9E-03
9,8E+00
2,5E+00
6,5E-01
8,1E-02
2,7E-02
4,1E-03
0,07
0,05
0,02
0,03
0,04
0,03
0,01
0,03
0,00
0,01
copyright by Vincotech
16
Revision: 7
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT and half bridge FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
1200
1000
800
600
400
200
0
500
400
300
200
100
0
0
50
100
150
200
T h
(
o C)
T h (
o C)
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
ºC
175
15
ºC
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
1000
800
600
400
200
0
500
400
300
200
100
0
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
Th
(
At
At
Tj =
Tj =
175
ºC
175
ºC
copyright by Vincotech
17
Revision: 7
70-W212NMA400SC-M209P
datasheet
Boost
neutral point IGBT
Figure 25
IGBT
Reverse bias safe operating area
IC = f(VCE
1400
)
ICMAX
1200
1000
800
600
400
200
0
0
100
200
ºC
300
400
500
600
700
VCE (V)
At
Tj =
Tjmax-25
Uccminus=Uccplus
Switching mode :
3 level switching
copyright by Vincotech
18
Revision: 7
70-W212NMA400SC-M209P
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
50
75
100
125
T (°C)
copyright by Vincotech
19
Revision: 7
70-W212NMA400SC-M209P
datasheet
Switching Definitions half bridge IGBT
General conditions
Tj
=
=
=
125 °C
1 Ω
1 Ω
Rgon
Rgoff
Figure 1
half bridge IGBT
Figure 2
half bridge IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
200
%
150
%
IC
VCE
tdoff
150
100
VGE 90%
IC
VCE
100
VGE
50
0
VCE 90%
tEoff
tdon
50
0
IC 1%
VCE3%
VGE 10%
IC 10%
VGE
tEon
-50
-50
-0,3
0
0,3
0,6
0,9
1,2
3,9
4,1
4,3
4,5
4,7
time (us)
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
V
350
400
0,35
1,12
V
350
400
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
ꢁs
ꢁs
0,25
0,56
ꢁs
ꢁs
Figure 3
half bridge IGBT
Figure 4
half bridge IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
175
fitted
%
IC
%
IC
150
100
IC 90%
125
100
75
75
VCE
IC 90%
IC
60%
50
tr
IC 40%
50
25
0
VCE
25
IC10%
IC 10%
tf
0
-25
-25
4,2
4,25
4,3
4,35
4,4
4,45
4,5
0,1
0,2
0,3
0,4
0,5
0,6
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
350
400
0,09
V
350
V
A
400
A
ꢁs
0,06
ꢁs
copyright by Vincotech
20
Revision: 7
70-W212NMA400SC-M209P
datasheet
Switching Definitions half bridge IGBT
Figure 5
half bridge IGBT
Figure 6
half bridge IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
%
125
%
IC
1%
Eon
Poff
100
100
Eoff
Pon
75
75
50
50
25
25
VGE90%
VGE 10%
VCE 3%
0
0
tEon
tEoff
-25
-25
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
time (us)
3,7
3,9
4,1
4,3
4,5
4,7
4,9
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
140,00
kW
mJ
ꢁs
140,00
12,30
0,56
kW
mJ
ꢁs
22,08
1,12
tEoff
=
tEon =
Figure 7
half bridge IGBT
Figure 8
neutral point FWD
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
125
20
%
Id
100
75
15
10
5
trr
50
25
0
Vd
fitted
-5
0
IRRM 10%
-10
-15
-20
-25
-50
IRRM 90%
IRRM 100%
-75
-1000
0
1000
2000
3000
4000
4,2
4,3
4,4
4,5
4,6
4,7
4,8
Qg (nC)
time(us)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
V
350
V
15
V
400
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
350
400
3059
V
-262
0,30
A
trr
=
A
ꢁs
nC
copyright by Vincotech
21
Revision: 7
70-W212NMA400SC-M209P
datasheet
Switching Definitions half bridge IGBT
Figure 9
neutral point FWD
Figure 10
neutral point FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
%
125
%
Erec
Qrr
Id
100
75
50
25
0
100
tErec
tQrr
50
0
-50
Prec
-100
-25
4,2
4,4
4,6
4,8
5
5,2
4,2
4,4
4,6
4,8
5
5,2
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
400
A
140,00
kW
mJ
ꢁs
Qrr (100%) =
33,04
0,64
ꢁC
ꢁs
7,44
0,64
tQrr
=
tErec =
half bridge IGBT switching measurement circuit
Figure 11
copyright by Vincotech
22
Revision: 7
70-W212NMA400SC-M209P
datasheet
Switching Definitions neutral point IGBT
General conditions
Tj
=
=
=
125 °C
1 Ω
1 Ω
Rgon
Rgoff
Figure 1
neutral point IGBT
Figure 2
neutral point IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
125
250
%
tdoff
%
IC
100
200
150
100
VGE 90%
IC
75
VGE
50
VCE
90%
tEoff
VGE
tdon
VCE
25
50
VCE
VCE 3%
VGE 10%
IC 10%
0
0
tEon
IC 1%
-25
-50
-0,2
0
0,2
0,4
0,6
3,9
4
4,1
4,2
4,3
4,4
4,5
time (us)
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
15
V
700
400
0,23
0,58
V
700
400
0,20
0,38
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
ꢁs
ꢁs
ꢁs
ꢁs
Figure 3
neutral point IGBT
Figure 4
neutral point IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
250
%
%
Ic
fitted
IC
200
150
100
IC 90%
75
IC
60%
100
50
IC 90%
IC 40%
tr
VCE
50
25
IC 10%
VCE
IC 10%
0
0
tf
-50
-25
4,15
4,20
4,25
4,30
4,35
0,1
0,2
0,3
0,4
0,5
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
700
V
700
V
400
A
400
A
0,088
ꢁs
0,032
ꢁs
copyright by Vincotech
23
Revision: 7
70-W212NMA400SC-M209P
datasheet
Switching Definitions neutral point IGBT
Figure 5
neutral point IGBT
Figure 6
neutral point IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
%
125
%
IC 1%
Eon
Eoff
100
75
100
75
50
50
Pon
Poff
25
25
Uce 3%
Uge 10%
Uge 90%
0
0
tEon
tEoff
-25
-25
3,9
4
4,1
4,2
4,3
4,4
-0,2
0
0,2
0,4
0,6
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
280,22
14,07
0,58
kW
mJ
ꢁs
280,2184 kW
13,39
0,38
mJ
tEoff
=
tEon =
ꢁs
Figure 7
neutral point IGBT
Figure 8
half bridge FWD
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
150
%
15
10
5
Id
100
trr
50
Ud
fitted
0
0
IRRM 10%
-5
-50
-10
-15
-20
-100
IRRM 90%
IRRM 100%
-150
-1000
0
1000
2000
3000
Qg (nC)
4,15
4,2
4,25
4,3
4,35
4,4
4,45
time(us)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
V
700
V
15
V
400
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
700
400
3442
V
-521
0,15
A
trr
=
A
ꢁs
nC
copyright by Vincotech
24
Revision: 7
70-W212NMA400SC-M209P
datasheet
Switching Definitions neutral point IGBT
Figure 9
half bridge FWD
Figure 10
half bridge FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr= integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
%
125
%
Erec
Id
100
100
75
tQint
tErec
50
Qrr
0
50
-50
-100
-150
25
Prec
0
-25
4
4,3
4,6
4,9
5,2
5,5
4
4,3
4,6
4,9
5,2
5,5
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
400
A
280,22
kW
mJ
ꢁs
Qrr (100%) =
49,18
0,33
ꢁC
ꢁs
12,71
0,33
tQint
=
tErec =
neutral point IGBT switching measurement circuit
Figure 11
copyright by Vincotech
25
Revision: 7
70-W212NMA400SC-M209P
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
M209P
in packaging barcode as
Standard
70-W212NMA400SC-M209P
M209P
Outline
copyright by Vincotech
26
Revision: 7
70-W212NMA400SC-M209P
datasheet
Ordering Code and Marking - Outline - Pinout
Pinout
copyright by Vincotech
27
Revision: 7
70-W212NMA400SC-M209P
datasheet
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright by Vincotech
28
Revision: 7
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