70-W624N3A1K2SC-L400FP [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 70-W624N3A1K2SC-L400FP |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总28页 (文件大小：1844K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70ꢀW624N3A1K2SCꢀL400FP
datasheet
VINcoNPC X12
Features
1500 V / 1200 A
VINco X12 housing
●
1500V NPCꢀtopology
● Low inductive
● High power screw interface
Target Applications
● Solar inverter
● Wind Power
● Motor Drive
Schematic
Types
● 70ꢀW624N3A1K2SCꢀL400FP
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Buck Switch
V CE
Collectorꢀemitter break down voltage
1200
940
V
A
I C
T j = T jmax
T s = 80 °C
DC collector current
I CRM
t p limited by T jmax
Pulsed collector current
3600
2400
A
A
V CE ≤ 1200V, T j ≤ T op max
T j = T jmax
Turn off safe operating area
P tot
V GE
T s = 80 °C
Power dissipation
2470
±20
W
V
Gateꢀemitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Buck Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
744
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p=10ms, sin 180°
T j = T jmax
Repetitive peak forward current
Power dissipation
2400
1490
175
A
W
°C
T jmax
Maximum Junction Temperature
Boost Switch
V CE
Collectorꢀemitter break down voltage
1200
922
V
A
I C
T j = T jmax
T s = 80 °C
DC collector current
I CRM
t p limited by T jmax
Pulsed collector current
3600
2400
A
A
V CE ≤ 1200V, T j ≤ T op max
Turn off safe operating area
P tot
V GE
T j = T jmax
T s = 80 °C
Power dissipation
2192
±20
W
V
Gateꢀemitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
Boost Inverse Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
634
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
1800
1069
175
A
W
°C
T jmax
Maximum Junction Temperature
Boost Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
648
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
1800
1069
175
A
W
°C
T jmax
Maximum Junction Temperature
copyright Vincotech
2
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Module Properties
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
ꢀ40…+(T jmax ꢀ 25)
125
°C
°C
°C
Operation temperature under switching condition
Maximum allowed PCB temperature
T PCB
Insulation Properties
t
t
= 2 s
DC Test Voltage*
AC Voltage
4000
2500
V
V isol
Insulation voltage
= 1 min
V
Creepage distance
Clearance
min 12,7
min 12,7
>200
mm
mm
Competative Tracking Index
CTI
* 100 % Tested in production
copyright Vincotech
3
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
V CE [V]
V DS [V]
I C [A]
I F [A]
I D [A]
V GE [V]
V GS [V]
T j [°C]
Min
Max
Buck Switch
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
0,0408
1200
25
5,2
1,7
5,8
6,4
2,4
V
V
25
125
2,37
2,78
15
0
1200
0
25
25
0,024
2880
mA
nA
ꢁ
20
0,166667
25
125
25
125
25
125
25
125
25
125
25
113
115
43
Rise time
45
ns
183
229
38
t d(off)
t f
Turnꢀoff delay time
R goff = 0,42 ꢁ
R gon = 0,42 ꢁ
ꢀ10/+15
600
1200
Fall time
68
44,08
48,91
49,18
86,78
E on
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
pF
E off
C ies
C oss
C rss
Q G
125
66480
4560
3840
9120
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
960
960
nC
phaseꢀchange
material
R th(j-s)
Thermal resistance chip to heatsink
0,038
K/W
λ = 3,4 W/mK
Buck Diode
25
125
2,34
2,38
2,52
V F
I R
Diode forward voltage
1200
1200
V
µA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
600
25
1440
25
125
25
125
25
125
25
125
25
125
1075
1355
169
I RRM
A
t rr
ns
214
73,24
136,71
26252
24254
28,02
61,41
Q rr
R gon = 0,42 ꢁ
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
ꢀ10/+15
µC
( di rf/dt )max
E rec
A/µs
mWs
phaseꢀchange
material
R th(j-s)
Thermal resistance chip to heatsink
0,06
K/W
λ = 3,4 W/mK
copyright Vincotech
4
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
V CE [V]
V DS [V]
I C [A]
I F [A]
I D [A]
V GE [V]
V GS [V]
T j [°C]
Min
Max
Boost Switch
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff incl diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
0,0456
1200
25
5
5,80
6,5
V
V
25
125
1,91
2,14
2,05
15
0
1200
0
25
25
25
0,0156
1440
mA
nA
ꢁ
20
0,625
158
174
64
25
125
25
125
25
125
25
125
25
125
Rise time
66
ns
273
342
57
t d(off)
t f
Turnꢀoff delay time
R goff = 0,42 ꢁ
R gon = 0,42 ꢁ
ꢀ10/+15
600
1200
Fall time
92
84,6
104,7
68,3
120,0
E on
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
pF
E off
C ies
C oss
C rss
Q G
73800
4860
4140
9600
Output capacitance
f = 1 MHz
0
25
1200
1200
25
25
Reverse transfer capacitance
Gate charge
15
960
nC
phaseꢀchange
material
R th(j-s)
Thermal resistance chip to heatsink
0,04
K/W
λ = 3,4 W/mK
Boost Inverse Diode
Diode forward voltage
25
125
1,35
1,90
1,84
2,05
168
V F
I R
900
V
Reverse leakage current
25
ꢂA
phaseꢀchange
material
R th(j-s)
Thermal resistance chip to heatsink
0,09
K/W
λ = 3,4 W/mK
Boost Diode
25
125
1,35
1,90
1,84
2,05
168
V F
Diode forward voltage
900
V
ꢂA
I r
I RRM
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
600
25
25
125
25
125
25
125
25
125
125
125
696
903
296
451
89
A
t rr
ns
Q rr
R gon = 0,42 ꢁ
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
ꢀ10/+15
1200
µC
173
5538
4822
31,66
69,81
( di rf/dt )max
E rec
A/µs
mWs
phaseꢀchange
material
R th(j-s)
Thermal resistance chip to heatsink
0,09
K/W
λ = 3,4 W/mK
copyright Vincotech
5
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
V CE [V]
V DS [V]
I C [A]
I F [A]
I D [A]
V GE [V]
V GS [V]
T j [°C]
Min
Max
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
Bꢀvalue
R
Δ R/R
P
25
100
25
25
25
25
22000
ꢁ
%
R 100 = 1484 ꢁ
ꢀ5
+5
5
mW
mW/K
K
1,5
B (25/50)
Tol. ±1%
Tol. ±1%
3962
4000
B (25/100)
Bꢀvalue
K
Vincotech NTC Reference
I
Module Properties
Module inductance (from chips to PCB)
Weight
Buck
Boost
5
9
L sCE
nH
g
CꢀPCB
m
1930
copyright Vincotech
6
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Buck
Buck IGBT and Buck FWD
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
2800
2800
2400
2000
1600
1200
800
2400
2000
1600
1200
800
400
400
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
t p
=
t p =
350
25
ꢂs
°C
350
125
ꢂs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
1000
1000
800
600
400
200
800
600
400
Tj = 125°C
Tj = 125°C
Tj = 25°C
200
Tj = 25°C
0
0
0
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
VF (V)
VGE (V)
At
At
t p
=
t p
=
350
10
ꢂs
V
350
ꢂs
V CE
=
copyright Vincotech
7
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Buck
Buck IGBT and Buck FWD
figure 5.
IGBT
figure 6.
FWD
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
125
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
Eoff High T
Erec High T
Eoff Low T
Eon High T
Eon Low T
Erec Low T
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
600
25/125
25/125
V CE
=
V CE
V GE
R gon
=
600
V GE
R gon
R goff
=
=
ꢀ10/+15
0,42
V
ꢀ10/+15
0,42
V
=
=
ꢁ
ꢁ
ꢁ
=
0,42
figure 7.
IGBT
figure 8.
FWD
Typical switching times as a
function of collector current
t = f(I C)
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
1,00
0,25
0,20
0,15
0,10
0,05
0,00
trr High T
tdoff
trr Low T
tdon
0,10
tf
tr
0,01
0,00
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
With an inductive load at
At
T j =
T j =
125
°C
V
°C
V
25/125
V CE
=
V CE
V GE
R gon
=
600
600
V GE
R gon
R goff
=
=
ꢀ10/+15
0,42
V
ꢀ10/+15
0,42
V
=
=
ꢁ
ꢁ
ꢁ
=
0,42
copyright Vincotech
8
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Buck
Buck IGBT and Buck FWD
figure 9.
FWD
figure 10.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
200
175
150
125
100
75
1600
1400
1200
1000
800
600
400
200
0
IRRM High T
Qrr High T
IRRM Low T
Qrr Low T
50
25
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I
C (A)
I C (A)
At
At
T j =
T j =
T j =
25/125
°C
V
#REF!
°C
°C
V
25/125
V CE
V GE
R gon
=
V CE
V GE
R gon
=
600
600
=
=
ꢀ10/+15
0,42
V
ꢀ10/+15
0,42
V
=
=
ꢁ
ꢁ
figure 11.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
40000
dIrec/dt T
dIo/dt T
35000
30000
25000
20000
15000
10000
5000
0
0
500
1000
1500
2000
2500
I C (A)
At
T j =
°C
V
25/125
V CE
V GE
R gon
=
600
=
ꢀ10/+15
0,42
V
=
ꢁ
copyright Vincotech
9
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Buck
Buck IGBT and Buck FWD
figure 12.
IGBT
figure 13.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
100
10-1
10-2
10-3
10-1
10-2
10-3
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
At
D =
At
D =
t p / T
t p / T
IGBT thermal model values with phaseꢀchange material
FWD thermal model values with phaseꢀchange material
R th(j-s)
=
R th(j-s) =
0,038
K/W
0,030
K/W
0,064
K/W
0,050
K/W
IGBT thermal model values
FWD thermal model values
With phase change material
R (K/W) Tau (s)
With phase change material
R (K/W) Tau (s)
1,56Eꢀ02 2,31E+00
6,86Eꢀ03 3,15Eꢀ01
8,33Eꢀ03 6,36Eꢀ02
5,40Eꢀ03 1,92Eꢀ02
1,08Eꢀ03 2,08Eꢀ03
1,24Eꢀ03 5,82Eꢀ04
1,54Eꢀ02 1,70E+00
2,39Eꢀ02 1,27Eꢀ01
1,70Eꢀ02 2,50Eꢀ02
4,58Eꢀ03 1,61Eꢀ03
2,91Eꢀ03 1,90Eꢀ04
figure 14.
IGBT
figure 15.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
5000
4000
3000
2000
1400
1200
1000
800
600
400
1000
200
0
0
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T s
(
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
copyright Vincotech
10
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Buck
Buck IGBT and Buck FWD
figure 16.
FWD
figure 17.
FWD
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Forward current as a
function of heatsink temperature
I F = f(T s)
3000
2500
2000
1500
1000
500
1200
1000
800
600
400
200
0
0
T s (
o C)
0
50
100
150
200
T s (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
°C
figure 18.
IGBT
Safe operating area as a function
of collectorꢀemitter voltage
I C = f(V CE
)
10uS
103
100uS
102
1mS
101
10mS
100mS
DC
100
10-1
103
102
VCE (V)
101
100
At
D =
single pulse
V GE
=
15
T jmax
V
T s =
T j =
80
ºC
ºC
copyright Vincotech
11
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Buck
Buck IGBT and Buck FWD
figure 20.
IGBT
Reverse bias safe operating area
I C = f(V CE
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
)
IC MAX
600
400
200
0
0
200
400
600
800
1000
1200
1400
VCE (V)
At
U ccminus=U ccplus
Switching mode :
3 level switching
copyright Vincotech
12
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Boost
Boost IGBT and Boost FWD
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
2800
2800
2400
2000
1600
1200
800
2400
2000
1600
1200
800
400
400
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
=
t p =
350
25
ꢂs
°C
350
125
ꢂs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
1200
2800
2400
2000
1600
1200
800
1000
800
600
400
200
Tj = 125°C
400
Tj = 25°C
Tj = 125°C
Tj = 25°C
0
0
0
2
4
6
8
10
12
0
1
2
3
4
V
GE (V)
VF (V)
At
At
t p
=
t p
=
350
10
ꢂs
V
350
ꢂs
V CE
=
copyright Vincotech
13
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Boost
Boost IGBT and Boost FWD
figure 5.
IGBT
figure 6.
FWD
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
250
200
150
100
50
80
70
60
50
40
30
20
10
0
Erec High T
Eon High T
Eon Low T
Eoff High T
Erec Low T
Eoff Low T
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
25/125
600
°C
V
25/125
600
°C
V
V CE
=
V CE
V GE
R gon
=
V GE
R gon
R goff
=
=
ꢀ10/ +15 V
ꢀ10/ +15 V
0,42 ꢁ
=
=
0,42
0,42
ꢁ
ꢁ
=
figure 7.
IGBT
figure 8.
FWD
Typical switching times as a
function of collector current
t = f(I C)
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
1
0,6
0,5
0,4
0,3
0,2
0,1
0,0
tdoff
trr High T
tdon
trr Low T
0,1
tf
tr
0,01
0,001
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
With an inductive load at
At
T j =
R gon
R goff
=
=
T j =
125
600
°C
V
0,42
0,42
ꢁ
25/125
600
°C
V
V CE
V GE
=
V CE
V GE
R gon
=
ꢁ
=
=
ꢀ10/ +15 V
ꢀ10/ +15 V
0,42
=
ꢁ
copyright Vincotech
14
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Boost
Boost IGBT and Boost FWD
figure 9.
FWD
figure 10.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
225
200
175
150
125
100
75
1000
800
600
400
200
0
Qrr High T
IRRM High T
IRRM Low T
Qrr Low T
50
25
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
At
At
T j =
T j =
25/125
600
°C
V
25/125
600
°C
V
V CE
V GE
R gon
=
V CE
V GE
R gon
=
=
=
ꢀ10/ +15 V
0,42
ꢀ10/ +15 V
0,42
=
=
ꢁ
ꢁ
figure 11.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
25000
dIrec/dt T
di0/dt T
20000
15000
10000
5000
0
0
500
1000
1500
2000
2500
I C (A)
At
T j =
25/125
°C
V
V CE
V GE
R gon
=
600
=
ꢀ10/ +15 V
0,4
=
ꢁ
copyright Vincotech
15
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Boost
Boost IGBT and Boost FWD
figure 12.
IGBT
figure 13.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
100
10-1
10-2
10-3
10-1
10-2
10-3
D = 0,5
0,2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
10110
t p (s)
t p (s)
At
D =
At
D =
t p / T
t p / T
IGBT thermal model values with phaseꢀchange material
FWD thermal model values with phaseꢀchange material
R th(j-s)
=
R th(j-s) =
0,043
K/W
0,034
0,089
K/W
0,069
IGBT thermal model values
FWD thermal model values
With phaseꢀchange material
R (K/W) Tau (s)
With phaseꢀchange material
R (K/W) Tau (s)
1,98Eꢀ02 1,78E+00
1,01Eꢀ02 1,66Eꢀ01
1,07Eꢀ02 3,06Eꢀ02
1,43Eꢀ03 2,59Eꢀ03
1,32Eꢀ03 2,69Eꢀ04
1,39Eꢀ02 5,78E+00
1,77Eꢀ02 1,38E+00
1,62Eꢀ02 2,57Eꢀ01
2,22Eꢀ02 5,31Eꢀ02
9,23Eꢀ03 1,60Eꢀ02
3,35Eꢀ03 2,27Eꢀ03
6,26Eꢀ03 2,74Eꢀ04
figure 14.
IGBT
figure 15.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
4500
4000
3500
3000
2500
2000
1500
1000
500
1400
1200
1000
800
600
400
200
0
0
0
50
100
150
200
0
50
100
150
200
T s
(
o C)
T s (
o C)
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GE
=
copyright Vincotech
16
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Boost
Boost IGBT and Boost FWD
figure 16.
FWD
figure 17.
FWD
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Forward current as a
function of heatsink temperature
I F = f(T s)
2000
1500
1000
500
0
1200
1000
800
600
400
200
0
0
50
100
150
200
0
50
100
150
200
T s
(
o C)
T s (
o C)
At
At
T j =
T j =
175
ºC
175
ºC
figure 18.
Reverse bias safe operating area
IGBT
I C = f(V CE
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
)
IC MAX
600
400
200
0
0
200
400
600
800
1000
1200
1400
VCE (V)
At
U ccminus=U ccplus
Switching mode :
3 level switching
copyright Vincotech
17
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Boost Inverse Diode
figure 19.
Boost Inverse Diode
figure 20.
Boost Inverse Diode
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
100
2800
2400
2000
1600
1200
800
10-1
10-2
10-3
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
Tj = Tjmax-25°C
400
Tj = 25°C
0
0
1
2
3
4
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p
=
250
ꢂs
D =
R th(j-s)
=
0,09
K/W
figure 21.
Power dissipation as a
Boost Inverse Diode
figure 22.
Forward current as a
Boost Inverse Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
2000
1500
1000
500
0
1200
1000
800
600
400
200
0
0
50
100
150
200
0
50
100
150
200
T s
(
o C)
T s (
o C)
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
18
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
50
75
100
125
T (°C)
copyright Vincotech
19
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Switching Definitions Buck
General conditions
T j
=
=
=
125 °C
0,42 ꢁ
0,42 ꢁ
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on
)
150
%
250
%
VCE
IC
125
100
75
200
150
100
50
tdoff
VCE 90%
VGE
VGE
VCE
VGE 90%
IC
50
tdon
tEoff
25
VCE 3%
VGE 10%
IC 10%
tEon
IC 1%
0
0
-50
-25
2,1
2,2
2,3
2,4
2,5
2,6
2,7
2,8
time(us)
-0,2
0
0,2
0,4
0,6
0,8
time (us)
V GE (0%) =
ꢀ10
15
V
V GE (0%) =
ꢀ10
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
600
V
600
1201
0,11
0,29
V
1201
A
A
t doff
=
=
0,23
0,48
ꢂs
ꢂs
t don
=
=
ꢂs
ꢂs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
150
%
250
%
Ic
125
200
fitted
VCE
IC
100
75
50
25
0
150
IC 90%
VCE
100
IC 60%
IC 90%
tr
IC 40%
50
IC 10%
IC 10%
0
tf
-50
-25
2,3
2,35
2,4
2,45
2,5
2,55
2,6
time(us)
0
0,1
0,2
0,3
0,4
0,5
time(us)
V C (100%) =
I C (100%) =
t f =
600
V
V C (100%) =
I C (100%) =
t r =
600
V
1201
0,07
A
1201
0,04
A
ꢂs
ꢂs
copyright Vincotech
20
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Switching Definitions Buck
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
125
125
%
%
Poff
Eon
Eoff
100
75
100
75
IC
1%
Pon
50
50
25
25
VCE 3%
VGE90%
VGE 10%
0
0
tEon
tEoff
-25
-25
2,2
2,3
2,4
2,5
2,6
2,7
2,8
time(us)
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
time (us)
P off (100%) =
E off (100%) =
720,80
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
720,80
48,91
0,29
kW
mJ
ꢂs
86,78
0,48
t E off
=
t E on =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
I
10%
RRM
-50
-100
-150
IRRM 90%
IRRM 100%
2,3
2,4
2,5
2,6
2,7
2,8
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
600
V
1201
ꢀ1355
0,21
A
A
t rr
=
ꢂs
copyright Vincotech
21
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Switching Definitions Buck
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
125
%
%
Id
Qrr
Erec
100
100
Prec
tQrr
75
50
25
0
50
tErec
0
-50
-100
-150
-25
2,4
2,5
2,6
2,7
2,8
2,9
2,3
2,4
2,5
2,6
2,7
2,8
2,9
time(us)
time(us)
I d (100%) =
Q rr (100%) =
1201
136,71
0,42
A
P rec (100%) =
E rec (100%) =
720,80
kW
mJ
ꢂs
ꢂC
ꢂs
61,41
0,42
t Q rr
=
t E rec =
copyright Vincotech
22
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Switching Definitions Boost
General conditions
T j
=
=
=
125 °C
0,42 ꢁ
0,42 ꢁ
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on
)
150
%
200
%
IC
VCE
125
100
75
tdoff
150
VGE
VCE
VGE 90%
90%
VCE
100
IC
tdon
50
50
tEoff
25
VCE 3%
VGE 10%
IC 10%
IC
1%
0
VGE
tEon
0
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
time (us)
2,3
2,4
2,5
2,6
2,7
2,8
2,9
3
time(us)
V GE (0%) =
ꢀ10
V
V GE (0%) =
ꢀ10
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
600
1200
0,34
0,70
V
600
V
A
1200
0,17
0,55
A
t doff
=
=
ꢂs
ꢂs
t don
=
=
ꢂs
ꢂs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
150
200
%
%
Ic
VCE
125
fitted
150
IC
100
Ic
90%
VCE
100
50
0
75
IC
90%
Ic
tr
60%
50
Ic
40%
25
IC 10%
Ic 10%
tf
0
-25
-50
0,1
0,2
0,3
0,4
0,5
0,6
0,7
2,4
2,5
2,6
2,7
2,8
2,9
3
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
600
V
V C (100%) =
I C (100%) =
t r =
600
V
1200
0,092
A
1200
A
ꢂs
0,065
ꢂs
copyright Vincotech
23
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Switching Definitions Boost
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
125
125
%
%
Poff
Eon
Eoff
100
75
100
75
50
25
0
Pon
IC
1%
50
25
Uce 3%
Uge 90%
Uge 10%
0
tEon
tEoff
-25
-25
2,2
2,4
2,6
2,8
3
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
P off (100%) =
E off (100%) =
719,72
119,96
0,70
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
719,724 kW
104,74
0,55
mJ
ꢂs
t E off
=
t E on =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
fitted
IRRM 10%
Ud
0
-50
IRRM 90%
IRRM 100%
-100
2,4
2,6
2,8
3
3,2
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
600
V
1200
ꢀ903
0,45
A
A
t rr
=
ꢂs
copyright Vincotech
24
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Switching Definitions Boost
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Qrr= integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
%
125
%
Erec
Id
Qrr
100
75
50
25
0
100
tErec
tQint
50
0
-50
Prec
-100
-25
2,4
2,6
2,8
3
3,2
3,4
3,6
2,4
2,6
2,8
3
3,2
3,4
3,6
time(us)
time(us)
I d (100%) =
Q rr (100%) =
1200
172,55
0,90
A
P rec (100%) =
E rec (100%) =
719,72
69,81
0,90
kW
mJ
ꢂs
ꢂC
ꢂs
t Qint
=
t E rec =
copyright Vincotech
25
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Outline
Outline
Driver pins
Y1
Low current connections
Pin
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
X1
Function
G11ꢀ1
M6
X2
Y2
Function
screw
ꢀ2,15
ꢀ2,15
46,15
46,15
19,45
24,55
ꢀ7,65
ꢀ7,65
51,65
84,85
81,95
84,85
81,95
93,05
93,05
70,05
67,15
70,05
67,15
75,35
75,35
28
E11ꢀ1
G13ꢀ2
2.1
2.2
0
0
PH
PH
22
0
0
E13ꢀ2
2.3
44
PH
DC+desat
DC+desat
G13ꢀ1
2.4
0
110,4
110,4
110,4
0
DC+
GND
DCꢀ
PH
2.5
22
2.6
44
E13ꢀ1
2.7
101
123
145
G13ꢀ2
2.8
0
PH
1.10 51,65
1.11 16,75
1.12 27,25
1.13 ꢀ2,55
1.14 ꢀ5,45
1.15 46,55
1.16 49,45
E13ꢀ2
2.9
0
PH
GND_desat
GND_desat
G14ꢀ1
2.10
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
101 110,4
123 110,4
145 110,4
DC+
GND
DCꢀ
PH
28
E14ꢀ1
202
224
246
0
0
0
28
G14ꢀ2
PH
28
E14ꢀ2
PH
1.17
1.18
1.19
ꢀ4,8
ꢀ1,6
48,8
50,85
49,05
50,85
G12ꢀ1
202 110,4
224 110,4
246 110,4
DC+
GND
DCꢀ
E12ꢀ1
G12ꢀ2
1.20
45,6
49,05
89,8
86,7
E12ꢀ2
1.21 67,65
1.22 67,65
Therm1ꢀ1
Therm2ꢀ1
1.23 98,85
1.24 98,85
84,85
81,95
G11ꢀ3
E11ꢀ3
1.25 147,15 84,85
1.26 147,15 81,95
1.27 120,45 93,05
1.28 125,55 93,05
G13ꢀ4
E13ꢀ4
DC+desat
DC+desat
1.29 93,35
1.30 93,35
70,05
67,15
G13ꢀ3
E13ꢀ3
1.31 152,65 70,05
1.32 152,65 67,15
1.33 117,75 75,35
1.34 128,25 75,35
G13ꢀ4
E13ꢀ4
GND_desat
GND_desat
G14ꢀ3
1.35 98,45
1.36 95,55
1.37 147,55
1.38 150,45
28
28
E14ꢀ3
28
G14ꢀ4
28
E14ꢀ4
1.39
1.40
96,2
99,4
50,85
49,05
50,85
49,05
89,8
86,7
G12ꢀ3
E12ꢀ3
1.41 149,8
1.42 146,6
1.43 168,65
1.44 168,65
G12ꢀ4
E12ꢀ4
Therm1ꢀ2
Therm2ꢀ2
G11ꢀ5
1.45 199,85 84,85
1.46 199,85 81,95
1.47 248,15 84,85
1.48 248,15 81,95
E11ꢀ5
G13ꢀ6
E13ꢀ6
1.49 221,45 93,05
1.50 226,55 93,05
DC+desat
DC+desat
1.51 194,35 70,05
1.52 194,35 67,15
1.53 253,65 70,05
1.54 253,65 67,15
1.55 218,75 75,35
1.56 229,25 75,35
G13ꢀ5
E13ꢀ5
G13ꢀ6
E13ꢀ6
GND_desat
GND_desat
G14ꢀ5
1.57 199,45
1.58 196,55
28
28
E14ꢀ5
1.59 248,55
1.60 251,45
1.61 197,2
1.62 200,4
1.63 250,8
28
G14ꢀ6
E14ꢀ6
G12ꢀ5
E12ꢀ5
G12ꢀ6
Driver pins
Y1
28
Pin
X1
Function
E12ꢀ6
50,85
49,05
50,85
1.64
1.65
1.66
247,6 49,05
269,7 89,8
269,7 86,7
Therm1ꢀ3
Therm2ꢀ3
copyright Vincotech
26
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Ordering Code and Marking ꢀ Outline ꢀ Pinout
Ordering Code & Marking
Version
in DataMatrix as
Standard
70ꢀW624N3A1K2SCꢀL400FP
70ꢀW624N3A1K2SCꢀL400FPꢀ/3/
Standard with thermal paste
Name
Name
NNꢀNNNNNNNNNNNNNNꢀNNNNNNNN
Date code
UL & Vinco
Lot
Serial
Text
Date code
Lot
Serial
UL
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTꢀTTT
LLLLL
SSSS
WWYY
Vincotech
Pinout
Identification
Current
1200 A
ID
Component
IGBT
Voltage
Function
Buck Switch
Comment
T11, T12
D11, D12
T13, T14
D13, D14
D15, D16
D41, D42
D43, D44
Rt
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
FWD
1200 A
Buck Diode
IGBT
1200 A
Boost Switch
Boost Diode
FWD
900 A
FWD
900 A
Boost Inverse Diode
FWD
90 A
Buck sw. Prot. Diode
Boost sw. Prot. Diode
Thermistor
FWD
90 A
NTC
copyright Vincotech
27
10 Jul. 2019 / Revision 3
70ꢀW624N3A1K2SCꢀL400FP
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
4
Handling instructions for VINco X12 packages see vincotech.com website.
Package data
Package data for VINco X12 packages see vincotech.com website.
Document No.:
Date:
Modification:
Marketing application voltage modified
Pages
10 Jul. 2019
1
70ꢀW624N3A1K2SCꢀL400FPꢀD3ꢀ14
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
28
10 Jul. 2019 / Revision 3
相关型号：
70-W624N3A1K2SC01-L400FP1
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
70-W624NIA1K2M702-L400FP7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
70-W624NIA1K8M701-LD00FP7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
70.0000MHZMP2410/50/-10+60/8PF
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ
70.0000MHZMP430/10/-10+60/SR
Series - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ
70.000MHZ49USMX/30/30/-10+60/18PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELDED, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/10/10/-10+60/8PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/10/10/-10+60/SR/AT3
Series - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/10/15/-40+85/18PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/30/10/-10+60/18PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/30/10/-10+60/32PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/30/10/-10+60/SR/AT3
Series - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
©2020 ICPDF网 联系我们和版权申明