80-M0066PA020SA-K645F1 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 80-M0066PA020SA-K645F1 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总18页 (文件大小：5328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M0066PA020SA-K645F10
datasheet
MiniSKiiP® PACK 0
600 V / 20 A
Features
MiniSKiiP® 0 16 mm housing
● Sixpack topology
● Open emitter configuration
● Solder-free spring contact technology
● Integrated thermal sensor
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 80-M0066PA020SA-K645F10
13 Jul. 2020 / Revision 2
Copyright Vincotech
1
80-M0066PA020SA-K645F10
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
27
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
62
W
V
VGES
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
26
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
43
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
13 Jul. 2020 / Revision 2
Copyright Vincotech
2
80-M0066PA020SA-K645F10
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0003
20
25
5
5,8
6,5
1,9
V
V
25
1,1
1,55
1,75
15
0
125
600
0
25
25
1,1
µA
nA
Ω
20
300
None
1100
71
Cies
pF
pF
pF
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
Reverse transfer capacitance
32
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
1,53
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
67,2
66,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
66,2
26
tr
125
150
25
27,2
28
Rgon = 16 Ω
Rgoff = 16 Ω
115,8
133,8
137,6
69,11
87,03
88,48
0,45
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
20
tf
125
150
25
ns
QrFWD=0,87 µC
QrFWD=1,64 µC
QrFWD=1,91 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,624
0,677
0,426
0,578
0,613
mWs
mWs
Eoff
125
150
13 Jul. 2020 / Revision 2
Copyright Vincotech
3
80-M0066PA020SA-K645F10
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,71
1,58
1,95
27
VF
IR
Forward voltage
20
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
2,2
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
8,88
11,5
IRRM
Peak recovery current
125
150
25
A
12,4
229,09
306,28
325,67
0,87
trr
Reverse recovery time
125
150
25
ns
di/dt=759 A/µs
di/dt=802 A/µs
di/dt=896 A/µs
Qr
Recovered charge
±15
350
20
125
150
25
1,64
μC
1,91
0,221
0,407
0,477
38,26
81,03
82,44
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
13 Jul. 2020 / Revision 2
Copyright Vincotech
4
80-M0066PA020SA-K645F10
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
Maximum Current
Power dissipation constant
A-value
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
13 Jul. 2020 / Revision 2
Copyright Vincotech
5
80-M0066PA020SA-K645F10
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
20
10
0
15
10
5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
12
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,528
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,52E-02
1,49E-01
7,06E-01
3,62E-01
1,38E-01
9,71E-02
1,56E+00
2,41E-01
4,40E-02
9,85E-03
2,12E-03
3,56E-04
13 Jul. 2020 / Revision 2
Copyright Vincotech
6
80-M0066PA020SA-K645F10
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
13 Jul. 2020 / Revision 2
Copyright Vincotech
7
80-M0066PA020SA-K645F10
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,196
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,86E-02
1,61E-01
9,23E-01
5,97E-01
2,73E-01
1,63E-01
2,51E+00
3,99E-01
5,50E-02
1,75E-02
3,11E-03
3,77E-04
13 Jul. 2020 / Revision 2
Copyright Vincotech
8
80-M0066PA020SA-K645F10
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
13 Jul. 2020 / Revision 2
Copyright Vincotech
9
80-M0066PA020SA-K645F10
datasheet
Inverter Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
13 Jul. 2020 / Revision 2
Copyright Vincotech
10
80-M0066PA020SA-K645F10
datasheet
Inverter Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
-2
10
-3
10
-1
10
-2
10
-3
10
tf
tr
tf
td(on)
tr
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
16
°C
V
150
350
±15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
13 Jul. 2020 / Revision 2
Copyright Vincotech
11
80-M0066PA020SA-K645F10
datasheet
Inverter Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
12,5
10,0
7,5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
5,0
2,5
IRM
IRM
IRM
0,0
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
13 Jul. 2020 / Revision 2
Copyright Vincotech
12
80-M0066PA020SA-K645F10
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
900
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
800
dirr/dt ──────
700
600
500
400
300
200
100
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
13 Jul. 2020 / Revision 2
Copyright Vincotech
13
80-M0066PA020SA-K645F10
datasheet
Inverter Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
13 Jul. 2020 / Revision 2
Copyright Vincotech
14
80-M0066PA020SA-K645F10
datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
13 Jul. 2020 / Revision 2
Copyright Vincotech
15
80-M0066PA020SA-K645F10
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M0066PA020SA-K645F10-/0A/
80-M0066PA020SA-K645F10-/0B/
80-M0066PA020SA-K645F10-/1A/
80-M0066PA020SA-K645F10-/1B/
80-M0066PA020SA-K645F10-/4A/
80-M0066PA020SA-K645F10-/4B/
80-M0066PA020SA-K645F10-/5A/
80-M0066PA020SA-K645F10-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
Type&Ver
TTTTTTTVV
Serial
Date code
WWYY
VIN & Lot
Serial&UL
Text
NN-NNNNNNNNNNNNNN
VIN LLLLL
SSSS UL
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
Function
G16
11,93
11,93
11,93
11,93
11,93
4,33
-11,5
-6,9
4,71
8,3
2
Ph3
3
G15
4
Therm1
Therm2
DC+123
5
11,5
-11,5
6
7
not assembled
6,95 G13
8
4,33
4,33
9
10,15
-11,5
-5,8
DC-3
G14
Ph2
10
11
12
13
14
15
16
17
18
-3,27
-3,27
not assembled
-3,27
-11,07
-11,07
11,5
-11,5
DC-2
G12
Ph1
-8,3
not assembled
4,93
-11,07
-11,07
G11
11,5
DC-1
Pad positions refers to center point. For more informations on pad design please see package data
13 Jul. 2020 / Revision 2
Copyright Vincotech
16
80-M0066PA020SA-K645F10
datasheet
Pinout
DC+123
6
T12
T14
T16
D11
G14
D13
D15
G12
14
G16
1
10
Ph1
15
Ph2
11
Ph3
2
T11
T13
T15
D12
D14
D16
G11
17
G13
8
G15
3
Rt
Therm1
4
Therm2
5
DC-1
18
DC-2
13
DC-3
9
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
20 A
20 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
600 V
Inverter Diode
Thermistor
Rt
Thermistor
13 Jul. 2020 / Revision 2
Copyright Vincotech
17
80-M0066PA020SA-K645F10
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 198
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 0 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M0066PA020SA-K645F10-D1-14
80-M0066PA020SA-K645F10-D2-14
19 May. 2020
13 Jul. 2020
/3A/ and /3B/ removed from option code
16
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
13 Jul. 2020 / Revision 2
Copyright Vincotech
18
相关型号：
80-M006PNB006SA-K614C
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M006PNB006SA01-K614D
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M006PNB010SA-K615C
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M006PNB010SA01-K615D
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M012PNA010M7-K619C71
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M012PNB008SC-K619C41
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M1066PA030SA-K543F1
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明