80-M112PMA015M7-K200A7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M112PMA015M7-K200A7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总29页 (文件大小：9600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M112PMA015M7-K200A70
datasheet
MiniSKiiP PIM 1
1200 V / 15 A
Topology features
MiniSKiiP® 1 16 mm housing
● Converter+Brake+Inverter
● Open Emitter configuration
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
● Switching optimized for EMC
Housing features
● Base isolation: Al2O3
● Easy assembly in one mounting step
● Flexible PCB design w/o pin holes
● Rugged solderless spring contacts
Schematic
Extra features
● Equivalent: SKiiP 12NAB12T4V1
Target applications
● Industrial Drives
Types
● 80-M112PMA015M7-K200A70
13 Oct. 2022 / Revision 4
Copyright Vincotech
1
80-M112PMA015M7-K200A70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
26
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
79
W
V
VGES
Gate-emitter voltage
±20
9,5
175
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
27
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
61
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
1200
26
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
79
W
V
VGES
Gate-emitter voltage
±20
9,5
175
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
27
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
61
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
37
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
51
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
With std lid
For more informations see handling
instructions
6,3
mm
mm
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0015
15
25
5,4
6
6,6
V
V
25
1,7
2,1(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,95
2,01
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
0
1200
0
25
25
60
µA
nA
Ω
200
None
2900
120
34
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
0/15
15
110
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,2
K/W
25
196,2
191,2
189,6
59,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
63,2
64,2
Rgon = 32 Ω
Rgoff = 32 Ω
181,4
206,2
211,4
94,66
113,14
114,01
1,68
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
15
tf
125
150
25
ns
QrFWD=1,5 µC
QrFWD=2,46 µC
QrFWD=2,68 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
2,11
mWs
mWs
2,21
0,987
1,33
Eoff
125
150
1,41
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,63
1,74
1,73
1,9(1)
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
30
µA
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,55
K/W
25
9,46
10,72
10,9
IRRM
Peak recovery current
125
150
25
A
285,73
421,73
470,63
1,5
trr
Reverse recovery time
125
150
25
ns
di/dt=181 A/µs
di/dt=205 A/µs
di/dt=175 A/µs
Qr
Recovered charge
±15
600
15
125
150
25
2,46
μC
2,68
0,497
0,913
1
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
76,99
48,52
43,64
(dirf/dt)max
125
150
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0015
15
25
5,4
6
6,6
V
V
25
1,7
2,1(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,95
2,01
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
0
1200
0
25
25
60
µA
nA
Ω
200
None
2900
120
34
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
0/15
15
110
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,2
K/W
25
96,4
85
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
77,8
60,6
62
tr
125
150
25
65
Rgon = 32 Ω
Rgoff = 32 Ω
296,4
324
td(off)
Turn-off delay time
Fall time
125
150
25
ns
330,8
96,84
115,88
120,37
1,65
2,05
2,17
1
0/15
600
15
tf
125
150
25
ns
QrFWD=1,49 µC
QrFWD=2,44 µC
QrFWD=2,68 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
1,34
1,43
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,63
1,74
1,73
1,9(1)
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
30
µA
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,55
K/W
25
9,66
10,9
IRRM
Peak recovery current
125
150
25
A
11,08
282,68
419,9
463,13
1,49
trr
Reverse recovery time
125
150
25
ns
di/dt=205 A/µs
di/dt=185 A/µs
di/dt=188 A/µs
Qr
Recovered charge
0/15
600
15
125
150
25
2,44
μC
2,68
0,505
0,915
1,01
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
75,04
50,71
46,9
(dirf/dt)max
125
150
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,996
0,907
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,37
K/W
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
Maximum Current
Power dissipation constant
A-value
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
Tj =
V
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
10
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,203
25 °C
125 °C
150 °C
VCE
=
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,45E-02
4,66E-01
3,90E-01
1,45E-01
1,16E-01
1,63E+00
9,37E-02
2,02E-02
3,96E-03
5,44E-04
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
5,0
0,1
0,01
100ms
DC
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
15
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Inverter Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
10
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,553
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,50E-02
5,68E-01
4,67E-01
2,46E-01
1,87E-01
1,79E+00
6,89E-02
1,30E-02
2,26E-03
3,04E-04
13 Oct. 2022 / Revision 4
Copyright Vincotech
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datasheet
Brake Switch Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
125 °C
150 °C
Tj =
V
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 11.
IGBT
figure 12.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
10
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,203
25 °C
125 °C
150 °C
VCE
=
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,45E-02
4,66E-01
3,90E-01
1,45E-01
1,16E-01
1,63E+00
9,37E-02
2,02E-02
3,96E-03
5,44E-04
13 Oct. 2022 / Revision 4
Copyright Vincotech
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datasheet
Brake Switch Characteristics
figure 13.
IGBT
figure 14.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
5,0
0,1
0,01
100ms
DC
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
15
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
13 Oct. 2022 / Revision 4
Copyright Vincotech
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80-M112PMA015M7-K200A70
datasheet
Brake Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
10
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,553
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,50E-02
5,68E-01
4,67E-01
2,46E-01
1,87E-01
1,79E+00
6,89E-02
1,30E-02
2,26E-03
3,04E-04
13 Oct. 2022 / Revision 4
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 17.
Rectifier
figure 18.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
10
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,371
25 °C
125 °C
Tj:
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
6,75E-02
1,34E-01
6,34E-01
3,25E-01
1,24E-01
8,71E-02
1,56E+00
2,41E-01
4,40E-02
9,85E-03
2,12E-03
3,56E-04
13 Oct. 2022 / Revision 4
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
13 Oct. 2022 / Revision 4
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
VGE
Rgon
Rgoff
32
figure 22.
FWD
figure 23.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
13 Oct. 2022 / Revision 4
Copyright Vincotech
17
80-M112PMA015M7-K200A70
datasheet
Inverter Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
tr
td(on)
td(off)
tf
tr
tf
-1
10
-1
10
-2
10
-2
10
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
32
°C
V
150
600
±15
15
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 26.
FWD
figure 27.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
13 Oct. 2022 / Revision 4
Copyright Vincotech
18
80-M112PMA015M7-K200A70
datasheet
Inverter Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
FWD
figure 31.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
5,0
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
13 Oct. 2022 / Revision 4
Copyright Vincotech
19
80-M112PMA015M7-K200A70
datasheet
Inverter Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
350
900
800
700
600
500
400
300
200
100
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
300
250
200
150
100
50
0
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
32
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
13 Oct. 2022 / Revision 4
Copyright Vincotech
20
80-M112PMA015M7-K200A70
datasheet
Brake Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
VGE
Rgon
Rgoff
32
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
13 Oct. 2022 / Revision 4
Copyright Vincotech
21
80-M112PMA015M7-K200A70
datasheet
Brake Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
tr
tr
tf
-1
-1
10
10
td(on)
tf
-2
10
-2
10
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
32
°C
V
150
600
0/15
15
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
13 Oct. 2022 / Revision 4
Copyright Vincotech
22
80-M112PMA015M7-K200A70
datasheet
Brake Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
5,0
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
13 Oct. 2022 / Revision 4
Copyright Vincotech
23
80-M112PMA015M7-K200A70
datasheet
Brake Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
225
500
400
300
200
100
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
200
dirr/dt ──────
175
150
125
100
75
50
25
0
0
5
10
15
20
25
30
IC(A)
0
25
50
75
100
125
150
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
32
V
V
Ω
125 °C
150 °C
600
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
32
32
Ω
13 Oct. 2022 / Revision 4
Copyright Vincotech
24
80-M112PMA015M7-K200A70
datasheet
Switching Definitions
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
13 Oct. 2022 / Revision 4
Copyright Vincotech
25
80-M112PMA015M7-K200A70
datasheet
Switching Definitions
figure 54.
FWD
figure 55.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
13 Oct. 2022 / Revision 4
Copyright Vincotech
26
80-M112PMA015M7-K200A70
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M112PMA015M7-K200A70-/0A/
80-M112PMA015M7-K200A70-/0B/
80-M112PMA015M7-K200A70-/1A/
80-M112PMA015M7-K200A70-/1B/
80-M112PMA015M7-K200A70-/4A/
80-M112PMA015M7-K200A70-/4B/
80-M112PMA015M7-K200A70-/5A/
80-M112PMA015M7-K200A70-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
2
X
Y
Function
G16
Ph3
15,93
15,93
-14,6
-9,8
3
not assembled
4
5
6
7
15,93
15,93
15,93
15,93
-0,2
7,62
12,62
15,8
Therm1
Therm2
G15
DC-3
8
9
not assembled
12,62 G13
8,23
8,23
7,73
7,73
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
15,8
-14,6
-9,8
DC-2
G14
Ph2
not assembled
not assembled
12,62
0,53
0,53
G11
15,8
-14,6
-9,8
-5
5,35
12,62
15,8
DC-1
G12
Ph1
DC+Br
Br
G27
-0,47
-0,47
-5,47
-5,47
-7,17
-7,17
DC-Br
not assembled
-8,07
-15,02
-15,02
-15,02
-15,02
-15,02
-9,8
-15,8
-9,8
0
DC+Inv
DC+Rect
ACIn3
ACIn2
9,8
15,8
ACIn1
DC-Rect
Pad positions refers to center point. For more informations on pad design please see package data
13 Oct. 2022 / Revision 4
Copyright Vincotech
27
80-M112PMA015M7-K200A70
datasheet
Pinout
25
19
24
DC+Rect
DC+Br
DC+Inv
T12
T14
T16
D32
D34
D36
D27
17
G12
D11
11
G14
D13
D15
1
G16
ACIn1
28
18
Ph1
ACIn2
27
20
Br
12
Ph2
ACIn3
26
2
Ph3
T27
T11
T13
T15
D31
D33
D35
D12
D14
D16
21
15
9
6
G27
G11
G13
G15
Rt
29
22
16
10
7
Therm1
Therm2
DC-Rect
DC-Br
DC-1
DC-2
DC-3
4
5
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
T15, T16
D11, D12, D13, D14,
IGBT
1200 V
15 A
Inverter Switch
Inverter Diode
FWD
1200 V
15 A
D15, D16
T27
IGBT
FWD
1200 V
1200 V
15 A
15 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
PTC
1600 V
25 A
Rectifier Diode
Thermistor
Rt
13 Oct. 2022 / Revision 4
Copyright Vincotech
28
80-M112PMA015M7-K200A70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 120
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 1 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correction of gate charge curves from uC to nC
80-M112PMA015M7-K200A70-D4-14
13 Oct. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
13 Oct. 2022 / Revision 4
Copyright Vincotech
29
相关型号：
SI9130DB
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