80-M2122PA200M7-K709F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | 80-M2122PA200M7-K709F7 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总16页 (文件大小:3294K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
80-M2122PA200M7-K709F70
datasheet
MiniSKiiP®DUAL 2
1200 V / 200 A
Features
MiniSkiip®2 housing
● IGBT M7 technology with low VCEsat and improved EMC behavior
● Solder-free spring contact technology
● Standard MiniSKiiP package sizes
● Built-in NTC
Schematic
Target applications
● Industrial Drives
● Power Supply
Types
● 80-M2122PA200M7-K709F70
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
234
400
460
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
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05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
159
400
280
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
6,3
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
V
Creepage distance
Clearance
mm
mm
For more informations see handling instructions
With std lid
6,3
For more informations see handling instructions
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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80-M2122PA200M7-K709F70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,02
200
25
5,4
6
6,6
V
V
25
1,53
1,70
1,75
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
200
µA
nA
Ω
20
1000
none
42000
1400
560
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
200
1400
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,21
K/W
25
206
205
206
19
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
23
24
235
259
267
78
Rgon = 2 Ω
Rgoff = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
600
200
tf
91
102
6,95
10,13
11,22
13,74
18,37
Qr
FWD
Qr
FWD
Qr
FWD
= 22,4 μC
= 31,9 μC
= 35,6 μC
Eon
Turn-on energy (per pulse)*
mWs
125
Eoff
Turn-off energy (per pulse)*
* Ls = 12 nH
150
19,95
Copyright Vincotech
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05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Diode
Static
25
1,82
1,96
1,97
2,1
80
VF
IR
125
150
Forward voltage
200
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,34
K/W
25
301
308
312
IRRM
125
150
25
Peak recovery current
A
230
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
306
344
ns
di/dt = 10487 A/μs
22,36
31,91
35,62
10,11
14,40
16,05
6707
5623
4972
di/dt = 9406 A/μs ±15
di/dt = 8683 A/μs
600
200
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
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05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,21
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,31E-02
3,15E-02
1,01E-01
4,55E-02
1,33E-02
1,91E-03
1,77E-01
2,05E-02
5,06E-03
9,66E-04
1,79E-04
1,01E-04
Copyright Vincotech
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05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,34
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
1,20E-02
2,94E-02
1,66E-01
7,33E-02
3,85E-02
2,04E-02
5,43E-01
7,14E-02
9,89E-03
3,38E-03
7,21E-04
1,03E-04
Thermistor Characteristics
figure 1.
Typical NTC characteristic
Thermistor
Typical Thermistor resistance values
as a function of temperature
R = f(T)
Copyright Vincotech
7
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
200
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
8
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
2
°C
V
Tj =
150
600
±15
200
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
25 °C
At
VCE
=
600
±15
2
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
VGE
=
=
Tj:
VGE
I C
=
±15
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
200
Copyright Vincotech
9
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
25 °C
At
VCE
VGE
R gon
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
200
V
V
A
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
At
VCE
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
200
V
V
A
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
10
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
200
V
V
A
25 °C
VGE
R gon
=
=
=
125 °C
Tj:
Tj:
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
11
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
200
259
V
600
200
205
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
200
91
V
VC (100%) =
I C (100%) =
600
200
23
V
A
A
ns
tr
=
ns
Copyright Vincotech
12
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Half-Bridge Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
200
308
306
V
I F (100%) =
Q r (100%) =
200
A
A
31,91
μC
A
trr
=
ns
Copyright Vincotech
13
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Ordering Code
80-M2122PA200M7-K709F70-/0A/
80-M2122PA200M7-K709F70-/0B/
80-M2122PA200M7-K709F70-/1A/
80-M2122PA200M7-K709F70-/1B/
80-M2122PA200M7-K709F70-/4A/
80-M2122PA200M7-K709F70-/4B/
80-M2122PA200M7-K709F70-/5A/
80-M2122PA200M7-K709F70-/5B/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
PCB pad table
Pin
X
Y
Function
S12
-7,6
4,7
21,9
21,9
21,8
18,6
15,4
12,2
9
1
2
G12
DC+
DC+
DC+
DC+
DC+
DC+
DC+
DC+
3
4
18,6
18,6
18,6
18,6
18,6
22,5
22,5
22,5
5
6
7
8
21,8
18,6
15,4
9
10
11
12
13
22,5
22,5
-22,5
12,2
9
7,8
DC+
DC+
Ph
14
15
16
17
18
19
20
21
22
-22,5
-22,5
-22,5
-22,5
-18,6
-18,6
-18,6
-18,6
-18,6
4,6
1,4
-1,8
-5
Ph
Ph
Ph
Ph
Ph
Ph
Ph
Ph
Ph
7,8
4,6
1,4
-1,8
-5
23
24
25
26
27
28
29
30
31
32
33
34
35
36
-6,8
-6,8
18,6
18,6
18,6
18,6
18,6
22,5
22,5
22,5
22,5
22,5
4,6
1,6
-1,6
Therm1
Therm2
DC-
-9
-12,2
-15,4
-18,6
-21,8
-9
DC-
DC-
DC-
DC-
DC-
-12,2
-15,4
-18,6
-21,8
-18,7
-21,9
DC-
DC-
DC-
DC-
S11
G11
1,7
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
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05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
200 A
200 A
Half-Bridge Switch
Half-Bridge Diode
Thermistor
D11, D12
Rt
FWD
NTC
1200 V
Copyright Vincotech
15
05 Mar. 2019 / Revision 3
80-M2122PA200M7-K709F70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M2122PA200M7-K709F70-D3-14
05 Mar. 2019
Correction of Ic/If values
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
05 Mar. 2019 / Revision 3
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SI9137
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SI9137DB
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SI9137LG
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SI9122E
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