80-M212PMA035M731-K220A72 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M212PMA035M731-K220A72 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总30页 (文件大小：5889K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M212PMA035M731-K220A72
datasheet
MiniSKiiP® PIM 2
1200 V / 35 A
Features
MiniSKiiP® 2 16 mm housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Tandem diodes for improved thermal performance
● Solder-free spring contact technology
● Builtin PTC
Schematic
Target applications
● Industrial Drives
Types
● 80-M212PMA035M731-K220A72
16 Jul. 2020 / Revision 2
Copyright Vincotech
1
80-M212PMA035M731-K220A72
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
49
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
129
±20
9,5
A
Ptot
W
V
VGES
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1300
34
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
107
175
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
Collector-emitter voltage
1200
49
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
129
±20
9,5
A
Ptot
W
V
VGES
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
16 Jul. 2020 / Revision 2
Copyright Vincotech
2
80-M212PMA035M731-K220A72
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
45
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
89
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
57
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
480
1100
95
A
Single Half Sine Wave,
tp = 10 ms
Tj = 150 °C
Ts = 80 °C
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
16 Jul. 2020 / Revision 2
Copyright Vincotech
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80-M212PMA035M731-K220A72
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
With std lid
For more informations see handling
instructions
6,3
mm
mm
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
16 Jul. 2020 / Revision 2
Copyright Vincotech
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80-M212PMA035M731-K220A72
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0035
35
25
5,4
6
6,6
V
V
25
1,48
1,63
1,68
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,08
0,5
mA
µA
Ω
20
None
7900
270
97
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
15
35
260
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
0,73
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
131
130
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
129
24
tr
125
150
25
29
29
Rgon = 8 Ω
Rgoff = 8 Ω
180
td(off)
Turn-off delay time
Fall time
125
150
25
210
ns
214
±15
600
35
103,87
133,81
141,31
1,68
2,32
2,44
2,64
3,59
3,82
tf
125
150
25
ns
QrFWD=0,863 µC
QrFWD=1,79 µC
QrFWD=2,04 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
16 Jul. 2020 / Revision 2
Copyright Vincotech
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80-M212PMA035M731-K220A72
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
3,2
3
3,84
1,6
VF
IR
Forward voltage
30
125
150
V
2,92
Reverse leakage current
Thermal
Vr = 1300 V
25
µA
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
0,89
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
12,91
18,76
19,57
92,92
155,12
167,37
0,863
1,79
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=782 A/µs
di/dt=639 A/µs
di/dt=619 A/µs
Qr
Recovered charge
±15
600
35
125
150
25
μC
2,04
0,293
0,612
0,717
363,27
219,58
184,74
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
16 Jul. 2020 / Revision 2
Copyright Vincotech
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80-M212PMA035M731-K220A72
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0035
35
25
5,4
6
6,6
V
V
25
1,48
1,63
1,68
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,08
0,5
mA
µA
Ω
20
None
7900
270
97
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
15
35
260
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
0,73
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
124,2
122,4
121,4
14,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
17
17,8
Rgon = 8 Ω
Rgoff = 8 Ω
178,6
202,8
208,2
95,14
117,86
118,79
1,45
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
35
tf
125
150
25
ns
QrFWD=4,34 µC
QrFWD=6,18 µC
QrFWD=6,9 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,92
mWs
mWs
2,09
2,4
Eoff
125
150
3,17
3,42
16 Jul. 2020 / Revision 2
Copyright Vincotech
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80-M212PMA035M731-K220A72
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,66
1,76
1,74
2,1
40
VF
IR
Forward voltage
35
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
1,06
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
77,33
75,64
76,58
157,26
283,67
310,8
4,34
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2681 A/µs
di/dt=2670 A/µs
di/dt=2690 A/µs
Qr
Recovered charge
±15
600
35
125
150
25
6,18
μC
6,9
1,96
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,82
mWs
A/µs
3,13
2734
2205
2101
(dirf/dt)max
125
150
16 Jul. 2020 / Revision 2
Copyright Vincotech
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80-M212PMA035M731-K220A72
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,25
1,2
1,5
VF
IR
Forward voltage
40
125
150
25
V
1,21
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
2000
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink*
0,74
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
Maximum Current
Power dissipation constant
A-value
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
16 Jul. 2020 / Revision 2
Copyright Vincotech
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80-M212PMA035M731-K220A72
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
=
Tj =
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,734
25 °C
125 °C
150 °C
VCE
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,73E-02
5,12E-02
1,36E-01
3,93E-01
7,33E-02
4,92E-02
3,39E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
16 Jul. 2020 / Revision 2
Copyright Vincotech
10
80-M212PMA035M731-K220A72
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
16 Jul. 2020 / Revision 2
Copyright Vincotech
11
80-M212PMA035M731-K220A72
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
80
60
40
20
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,89
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,31E-02
6,21E-02
1,65E-01
4,77E-01
8,89E-02
5,97E-02
4,11E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
16 Jul. 2020 / Revision 2
Copyright Vincotech
12
80-M212PMA035M731-K220A72
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
=
Tj =
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,734
25 °C
125 °C
150 °C
VCE
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,73E-02
5,12E-02
1,36E-01
3,93E-01
7,33E-02
4,92E-02
3,39E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
16 Jul. 2020 / Revision 2
Copyright Vincotech
13
80-M212PMA035M731-K220A72
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
16 Jul. 2020 / Revision 2
Copyright Vincotech
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datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,064
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,96E-02
7,42E-02
1,97E-01
5,70E-01
1,06E-01
7,13E-02
4,92E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
16 Jul. 2020 / Revision 2
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
0,738
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,75E-02
5,15E-02
1,37E-01
3,96E-01
7,37E-02
4,95E-02
3,41E-03
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
6,42E-04
16 Jul. 2020 / Revision 2
Copyright Vincotech
16
80-M212PMA035M731-K220A72
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
16 Jul. 2020 / Revision 2
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eoff
Eon
Eoff
Eoff
0
10
20
30
40
50
60
70
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
VGE
V
V
A
Rgon
Rgoff
Ω
Ω
8
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
18
80-M212PMA035M731-K220A72
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
tf
tf
tr
-1
10
-1
10
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
35
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
8
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
19
80-M212PMA035M731-K220A72
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
70
60
50
40
30
20
10
0
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
20
80-M212PMA035M731-K220A72
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2000
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
dirr/dt ──────
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
8
8
Ω
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
21
80-M212PMA035M731-K220A72
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon
Eon
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eoff
0
10
20
30
40
50
60
70
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
VGE
V
V
A
Rgon
Rgoff
Ω
Ω
8
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
22
80-M212PMA035M731-K220A72
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
tf
tf
-1
-1
10
10
tr
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
35
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
8
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
23
80-M212PMA035M731-K220A72
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
10
9
8
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
6
Qr
4
2
0
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
35
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
24
80-M212PMA035M731-K220A72
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
IC(A)
0
5
10
15
20
25
30
35
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
35
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
8
8
Ω
Ω
16 Jul. 2020 / Revision 2
Copyright Vincotech
25
80-M212PMA035M731-K220A72
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
16 Jul. 2020 / Revision 2
Copyright Vincotech
26
80-M212PMA035M731-K220A72
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
16 Jul. 2020 / Revision 2
Copyright Vincotech
27
80-M212PMA035M731-K220A72
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M212PMA035M731-K220A72-/0A/
80-M212PMA035M731-K220A72-/0B/
80-M212PMA035M731-K220A72-/1A/
80-M212PMA035M731-K220A72-/1B/
80-M212PMA035M731-K220A72-/4A/
80-M212PMA035M731-K220A72-/4B/
80-M212PMA035M731-K220A72-/5A/
80-M212PMA035M731-K220A72-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Function
G16
S16
Ph3
34
0,03
0,03
5,8
9
Pin
1
2
3
4
5
6
7
8
X
Y
Br
Br
24,38
24,38
24,38
-21,8
-18,6
-15,4
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
not assembled
not assembled
0,03
0,03
-8,5
-8,5
not assembled
-9
not assembled
not assembled
12,2
18,6
21,8
-21,8
-18,6
DC-Br
G27
DC+Rect
DC+Rect
24,38
24,38
Ph3
G15
not assembled
-12,2
not assembled
-5,8
0,7
not assembled
9
not assembled
-8,5
DC+Inv
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
24,38
24,38
16,58
16,58
18,6
21,8
12,2
15,4
Therm2
Therm1
G13
-12,22
-12,22
DC+Inv
DC+Br
DC-Inv
not assembled
-12,22
-12,22
7,1
DC+Br
16,58
13,42
21,8
-21,8
DC-Inv
G14
not assembled
15,4
not assembled
21,8
-21,8
not assembled
DC-Rect
not assembled
-15,4
13,42
13,42
S14
Ph2
-12,22
-24,38
DC-Rect
ACIn3
-12,2
not assembled
-5,8
13,42
Ph2
-24,38
-15,4
ACIn3
not assembled
not assembled
12,2
not assembled
not assembled
not assembled
-2,5
not assembled
8,38
8,38
G11
Se
15,4
-24,38
-24,38
-24,38
-24,38
ACIn2
not assembled
8,38
2,46
21,8
-21,8
DC-Br
G12
3,9
ACIn2
not assembled
15,4
not assembled
not assembled
-15,4
ACIn1
2,46
2,46
S12
Ph1
-12,2
21,8
ACIn1
not assembled
33
2,46
-5,8
Ph1
Pad positions refers to center point. For more informations on pad design please see package data
16 Jul. 2020 / Revision 2
Copyright Vincotech
28
80-M212PMA035M731-K220A72
datasheet
Pinout
DC+Rect
40,41
DC+Br
46,48
DC+Inv
43,45
D11-1
D11-2
D13-1
D13-2
D15-1
D15-2
T12
T14
T16
G12
28
G14
16
G16
1
D32
D27
D34
D36
S14
18
S16
2
S12
30
ACIn1
63,65
Ph1
31,33
ACIN2
59,61
Br
34,35
Ph2
19,21
ACIN3
53,55
Ph3
3,5
D31
D33
D35
D12-1
D12-2
D14-1
D14-2
D16-1
D16-2
T11
T13
T15
T27
G11
24
G13
12
G15
8
G27
39
Se
25
Rt
DC-Rect
50,52
DC-Br
27,38
DC-Inv
13,15
Therm1
11
Therm2
10
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
T15, T16
D11, D12, D13, D14,
IGBT
1200 V
35 A
Inverter Switch
Inverter Diode
FWD
1300 V
30 A
D15, D16
T27
IGBT
FWD
1200 V
1200 V
35 A
35 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
40 A
Rectifier Diode
Thermistor
Rt
Thermistor
16 Jul. 2020 / Revision 2
Copyright Vincotech
29
80-M212PMA035M731-K220A72
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M212PMA035M731-K220A72-D1-14
80-M212PMA035M731-K220A72-D2-14
3 Dec. 2019
16 Jul. 2020
/3A/ and /3B/ removed from option code
28
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
16 Jul. 2020 / Revision 2
Copyright Vincotech
30
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