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80-M3122PA300SC-K839F42 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
80-M3122PA300SC-K839F42
型号： 80-M3122PA300SC-K839F42
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
文件： 总17页 (文件大小：2448K)
中文：  中文翻译
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80-M3122PA300SC-K839F42  
datasheet  
MiniSkiip® DUAL 3  
1200 V / 300 A  
MiniSkiip® 3 housing  
Features  
● Half-bridge topology  
● Trench IGBT and CAL diode chip technology  
● Integrated NTC sensor  
● Solderless spring contact mounting system  
Schematic  
Target applications  
● Industrial Drives  
● Power Supply  
● Solar Inverters  
● UPS  
Types  
● 80-M3122PA300SC-K839F42  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Half-Bridge Switch  
VCES  
IC  
Collector-emitter voltage  
1200  
316  
900  
820  
±20  
10  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
1
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Half-Bridge Diode  
VRRM  
IF  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
1200  
241  
485  
175  
V
A
Continuous (direct) forward current  
Total power dissipation  
Tj = Tjmax  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
W
°C  
Maximum junction temperature  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
6,3  
V
Visol  
Isolation voltage  
AC Voltage  
with std lid  
tp = 1 min  
V
Creepage distance  
mm  
mm  
For more information see handling instructions  
with std lid  
Clearance  
6,3  
For more information see handling instructions  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Half-Bridge Switch  
Static  
VGE(th)  
VGE = VCE  
Gate-emitter threshold voltage  
0,0104 25  
25  
5,3  
5,8  
6,3  
V
V
1,58  
2,00  
2,33  
2,41  
2,07  
VCEsat  
125  
150  
Collector-emitter saturation voltage  
15  
300  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
4
µA  
nA  
Ω
20  
480  
2,5  
17200  
640  
Cies  
Cres  
Qg  
f = 1 Mhz  
0
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
#VALUE! #VALUE! 25  
2280  
nC  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,12  
K/W  
Dynamic  
25  
125  
214  
224  
Turn-on delay time  
td(on)  
150  
25  
226  
34  
Rise time  
tr  
125  
150  
25  
40  
41  
333  
Rgon = 2 Ω  
Rgoff = 2 Ω  
ns  
Turn-off delay time  
Fall time  
td(off)  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
402  
422  
68  
126  
±15  
600  
300  
tf  
139  
17,90  
25,72  
29,58  
17,35  
27,75  
32,41  
QrFWD = 16,8 μC  
QrFWD = 34,5 μC  
QrFWD = 42,6 μC  
Turn-on energy (per pulse)*  
Eon  
mWs  
Turn-off energy (per pulse)*  
* Ls = 14 nH  
Eoff  
Copyright Vincotech  
3
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Half-Bridge Diode  
Static  
25  
2,31  
2,39  
2,31  
2,52  
VF  
IR  
125  
150  
25  
Forward voltage  
300  
V
360  
Reverse leakage current  
1200  
µA  
150  
53100  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,20  
K/W  
Dynamic  
25  
287  
336  
359  
Peak recovery current  
IRRM  
125  
150  
25  
A
143  
Reverse recovery time  
trr  
Qr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
343  
365  
ns  
di/dt = 8750 A/μs  
di/dt = 8160 A/μs ±15  
di/dt = 7989 A/μs  
16,79  
34,54  
42,61  
4,98  
11,73  
14,92  
12375  
9067  
7727  
Recovered charge  
600  
300  
μC  
Reverse recovered energy  
Peak rate of fall of recovery current  
Erec  
mWs  
A/µs  
(dirf/dt)max  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
5
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 493 Ω  
-5  
+5  
245  
1,4  
mW  
mW/K  
K
B(25/50) Tol. ±2 %  
B(25/100) Tol. ±2 %  
3375  
3437  
B-value  
K
Vincotech NTC Reference  
K
Copyright Vincotech  
4
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
100  
I
Z
10-1  
10-2  
10-3  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
0
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
0,12  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
3,18E-02  
2,31E-02  
4,43E-02  
7,45E-03  
5,25E-03  
3,96E-03  
1,61E+00  
2,11E-01  
4,70E-02  
6,65E-03  
8,94E-04  
2,31E-04  
Copyright Vincotech  
5
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
I
D =  
single pulse  
80 ºC  
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
6
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
Z
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
0,20  
Tj:  
R th(j-s)  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
1,94E-02  
3,66E-02  
3,62E-02  
7,22E-02  
1,62E-02  
1,31E-02  
2,18E-03  
6,80E+00  
8,51E-01  
1,47E-01  
3,96E-02  
6,43E-03  
8,07E-04  
2,94E-04  
Copyright Vincotech  
7
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Thermistor  
Typical NTC characteristic  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
8
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
60  
80  
Eon  
Eoff  
Eon  
Eoff  
E
E
48  
Eon  
Eon  
60  
36  
24  
12  
0
Eon  
Eoff  
Eon  
40  
20  
0
Eoff  
Eoff  
Eoff  
0
120  
240  
360  
480  
600  
IC (A)  
0
2
4
6
8
10  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
600  
±15  
2
V
V
Ω
Ω
600  
±15  
300  
V
V
A
VCE  
VGE  
=
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
2
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
20  
25  
Erec  
Erec  
E
E
20  
15  
Erec  
Erec  
15  
10  
5
10  
5
Erec  
Erec  
0
0
0
2
4
6
8
10  
0
120  
240  
360  
480  
600  
IC (A)  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
600  
±15  
2
V
V
Ω
600  
±15  
300  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
9
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
1
1
td(off)  
td(on)  
t
t
td(off)  
td(on)  
tf  
tf  
0,1  
0,1  
tr  
tr  
0,01  
0,01  
0
2
4
6
8
10  
0
120  
240  
360  
480  
600  
IC (A)  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
150  
600  
±15  
2
°C  
V
150  
600  
±15  
300  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
0,6  
0,8  
t
t
trr  
trr  
0,48  
trr  
trr  
0,6  
0,36  
0,24  
0,12  
0
0,4  
0,2  
trr  
trr  
0
0
0
120  
600  
240  
360  
480  
600  
2
4
6
8
10  
Rg on (Ω)  
IC (A)  
V
V
Ω
600  
V
V
A
At  
VCE  
=
At  
VCE =  
25 °C  
25 °C  
±15  
2
±15  
300  
VGE  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
10  
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
80  
50  
Q
Q
Qr  
Qr  
40  
Qr  
60  
Qr  
30  
20  
10  
40  
20  
Qr  
Qr  
0
0
0
0
120  
240  
360  
480  
600  
2
4
6
8
10  
Rg on (Ω)  
IC (A)  
600  
±15  
2
V
V
Ω
600  
±15  
300  
V
V
A
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
500  
600  
IRM  
I
I
IRM  
400  
480  
IRM  
360  
240  
120  
300  
200  
100  
IRM  
IRM  
IRM  
0
0
0
0
2
4
6
8
10  
Rgo n (Ω)  
120  
240  
360  
480  
600  
IC (A)  
600  
±15  
2
V
V
Ω
600  
±15  
300  
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
11  
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
25000  
16000  
diF/dt  
diF/  
dt  
t
i
t
dirr/dt  
dirr  
/
dt  
i
20000  
12000  
8000  
4000  
15000  
10000  
5000  
0
0
0
0
2
4
6
8
10  
Rg on (Ω)  
120  
600  
240  
360  
480  
600  
IC (A)  
V
V
Ω
25 °C  
125 °C  
150 °C  
600  
±15  
300  
V
V
A
25 °C  
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
±15  
2
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
R gon  
=
=
=
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
750  
I
IC MAX  
600  
I
450  
300  
150  
0
I
V
0
300  
600  
900  
1200  
1500  
VC E (V)  
At  
175  
°C  
Ω
Tj  
=
=
=
2
2
R gon  
R goff  
Ω
Copyright Vincotech  
12  
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switching Definitions  
General conditions  
=
=
=
125 °C  
2 Ω  
2 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
%
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t (µs)  
t (µs)  
-15  
15  
V
-15  
V
VGE (0%) =  
VGE (0%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
300  
402  
V
600  
300  
224  
V
A
A
ns  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
IC 40%  
VCE  
IC 90%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t (µs)  
t (µs)  
600  
300  
126  
V
600  
300  
40  
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
A
A
ns  
tr  
=
ns  
Copyright Vincotech  
13  
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Half-Bridge Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t (µs)  
t (µs)  
600  
300  
336  
343  
V
300  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
34,54  
μC  
A
ns  
t rr  
=
Copyright Vincotech  
14  
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Ordering Code & Marking  
Version  
With std lid (6,5 mm height) + no thermal grease  
With thin lid (2,8 mm height) + no thermal grease  
Ordering Code  
80-M3122PA300SC-K839F42-/0A/  
80-M3122PA300SC-K839F42-/0B/  
80-M3122PA300SC-K839F42-/1A/  
80-M3122PA300SC-K839F42-/1B/  
80-M3122PA300SC-K839F42-/4A/  
80-M3122PA300SC-K839F42-/4B/  
80-M3122PA300SC-K839F42-/5A/  
80-M3122PA300SC-K839F42-/5B/  
With std lid (6,5 mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2,8 mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6,5 mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2,8 mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6,5 mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2,8 mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Name  
Date code  
WWYY  
Serial  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
PCB pad table  
PCB pad table  
Pin  
1
X
Y
Pin  
X
Y
Function  
Ph  
Function  
+DC  
-53,95 -17,8  
-53,95 -14,6  
-53,95 -11,4  
-53,95 -8,2  
48  
49  
50  
51  
13,95  
13,95  
13,95  
13,95  
15,4  
18,6  
21,8  
25  
2
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
+DC  
3
+DC  
+DC  
4
5
-53,95  
-5  
6
-53,95 -1,8  
7
-53,95  
-53,95  
1,4  
4,6  
8
9
-49,95 -17,8  
10 -49,95 -14,6  
11 -49,95 -11,4  
12 -49,95 -8,2  
13 -49,95  
-5  
14 -49,95 -1,8  
15 -49,95  
16 -49,95  
1,4  
4,6  
Ph  
Ph  
17 -51,75 21,8  
18 -51,75 25,4  
19 -20,25 -25,4  
Therm1  
Therm2  
G11  
20 -20,25  
21  
-22  
S11  
Not assembled  
22 -20,15 21,8  
23 -20,15 25,4  
S12  
G12  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
-DC  
+DC  
+DC  
+DC  
+DC  
+DC  
+DC  
+DC  
+DC  
+DC  
+DC  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
9,95  
9,95  
9,95  
9,95  
9,95  
9,95  
9,95  
13,95  
-25  
-21,8  
-18,6  
-15,4  
-12,2  
-9  
-5,8  
-25  
13,95 -21,8  
13,95 -18,6  
13,95 -15,4  
13,95 -12,2  
13,95  
13,95  
9,95  
-9  
-5,8  
5,8  
9
9,95  
9,95  
12,2  
15,4  
18,6  
21,8  
25  
9,95  
9,95  
9,95  
9,95  
13,95  
13,95  
13,95  
5,8  
9
12,2  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
15  
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11-T12  
IGBT  
1200 V  
300 A  
300 A  
Half-Bridge Switch  
Half-Bridge Diode  
Thermistor  
D11-D12  
Rt  
FWD  
NTC  
1200 V  
Copyright Vincotech  
16  
08 Mar. 2019 / Revision 3  
80-M3122PA300SC-K839F42  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 48  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSkiiP® 3 packages see vincotech.com website.  
Package data  
Package data for MiniSkiiP® 3 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Correction of Ic/If values  
80-M3122PA300SC-K839F42-D3-14  
08 Mar. 2019  
1
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
08 Mar. 2019 / Revision 3  

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