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80-M3126PA150SH01-K430F43 [VINCOTECH]

Easy paralleling;High speed switching;Low switching losses;
80-M3126PA150SH01-K430F43
型号： 80-M3126PA150SH01-K430F43
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;High speed switching;Low switching losses
文件： 总16页 (文件大小：3237K)
中文：  中文翻译
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80-M3126PA150SH01-K430F43  
datasheet  
MiniSKiiP® PACK 3  
1200 V / 150 A  
Features  
MiniSkiip® 3 housing  
● Trench Fieldstop High Speed IGBT4 Technology  
● Solder-free spring contact Technology  
● Integrated temperature sensor  
● Si3N4 substrate for enhanced thermal performance  
Schematic  
Target applications  
● Embedded Drives  
● Industrial Drives  
Types  
● 80-M3126PA150SH01-K430F43  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
IC  
Collector-emitter voltage  
1200  
168  
450  
501  
±20  
10  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
1
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
1200  
143  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
900  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
4050  
297  
A2s  
W
°C  
Total power dissipation  
Tj = Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
V
V
Visol  
Isolation voltage  
AC Voltage  
With std lid  
tp = 1 min  
Creepage distance  
Clearance  
6,3  
mm  
mm  
For more informations see handling  
instructions  
With std lid  
For more informations see handling  
instructions  
6,3  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0052 25  
25  
5,3  
5,8  
6,3  
V
V
1,78  
2,19  
2,54  
2,65  
2,42  
VCEsat  
Collector-emitter saturation voltage  
15  
150  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
20  
µA  
nA  
Ω
20  
240  
5
Cies  
Cres  
8800  
470  
f = 1 Mhz  
0
25  
25  
pF  
Reverse transfer capacitance  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,19  
K/W  
Dynamic  
25  
158  
168  
171  
65  
td(on)  
125  
150  
25  
Turn-on delay time  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
70  
70  
237  
300  
315  
28  
69  
82  
19,45  
26,71  
29,21  
6,08  
Rgon = 2 Ω  
Rgoff = 2 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
±15  
600  
150  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 8,2 μC  
= 19,4 μC  
= 23 μC  
Eon  
Turn-on energy (per pulse)  
mWs  
Eoff  
Turn-off energy (per pulse)  
125  
150  
10,20  
11,29  
Copyright Vincotech  
3
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
2,21  
2,27  
2,19  
2,46  
VF  
IR  
125  
150  
25  
Forward voltage  
150  
V
180  
Reverse leakage current  
1200  
µA  
150  
28000  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,32  
K/W  
Dynamic  
25  
41  
55  
60  
IRRM  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
Peak recovery current  
A
361  
612  
711  
8,21  
19,42  
23,00  
2,56  
6,69  
7,83  
144  
148  
143  
trr  
Qr  
Reverse recovery time  
ns  
di/dt = 820 A/μs  
di/dt = 894 A/μs  
di/dt = 944 A/μs  
±15  
600  
150  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Thermistor  
R
ΔR/R  
R
Rated resistance  
25  
1
kΩ  
%
Deviation of R100  
R100  
R100 = 1670 Ω  
100  
100  
25  
-2  
+2  
1670  
0,76  
Ω
Power dissipation constant  
A-value  
mW/K  
1/K  
1/K²  
7,635*10-3  
1,731*10-5  
A(25/50)  
25  
B(25/100)  
B-value  
25  
Vincotech PTC Reference  
E
Copyright Vincotech  
4
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
500  
500  
VGE  
:
7
8
9
V
V
V
I
I
400  
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
400  
300  
200  
100  
300  
200  
100  
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)  
VC E (V)  
tp  
=
250  
15  
μs  
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
250  
150  
μs  
°C  
VGE  
=
V
Tj:  
=
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
100  
150  
I
120  
Z
10-1  
90  
60  
30  
0,5  
10-2  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-3  
10-5  
0
0
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
2
4
6
8
10  
12  
VG E (V)  
tp  
=
100  
10  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
V
Tj:  
=
0,19  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
4,60E-02  
3,85E-02  
7,14E-02  
1,54E-02  
9,56E-03  
8,81E-03  
2,08E+00  
3,68E-01  
7,51E-02  
2,46E-02  
3,29E-03  
4,80E-04  
Copyright Vincotech  
5
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
1000  
1ms  
10µs  
10ms  
100µs  
100ms  
V
DC  
100  
10  
1
0,1  
0,01  
1  
10  
100  
1000  
10000  
VCE(V)
single pulse  
80  
D =  
Ts =  
ºC  
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
6
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
500  
400  
300  
200  
100  
0
Z
10-1  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
1
2
3
4
5
VF (V)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
0,32  
Tj:  
R th(j-s)  
=
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,41E-02  
4,33E-02  
8,48E-02  
1,17E-01  
2,41E-02  
1,62E-02  
2,90E+00  
7,45E-01  
1,59E-01  
4,42E-02  
3,98E-03  
7,03E-04  
PTC Characteristics  
figure 1.  
Typical PTC characteristic  
Thermistor  
Typical Thermistor resistance values  
as a function of temperature  
R = f(T)  
PTC-typical temperature characteristic  
2000  
1500  
1000  
500  
0
25  
50  
75  
100  
125  
T (°C)  
Copyright Vincotech  
7
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
120  
60  
Eon  
Eon  
E
E
100  
45  
80  
60  
40  
20  
0
Eon  
Eon  
Eon  
30  
15  
0
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
50  
100  
150  
200  
25 °C  
250  
300  
IC (A)  
0
2
4
6
8
10  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
600  
±15  
2
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
2
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
12  
12  
E
E
Erec  
9
9
Erec  
Erec  
Erec  
6
3
0
6
3
0
Erec  
Erec  
0
2
4
6
8
10  
0
50  
100  
150  
200  
250  
300  
IC (A)  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
8
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
1
1
t
t
td(off)  
td(on)  
td(off)  
td(on)  
tr  
tr  
0,1  
0,1  
tf  
tf  
0,01  
0,01  
0
2
4
6
8
10  
0
50  
100  
150  
200  
250  
300  
IC (A)  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
150  
600  
±15  
2
°C  
Tj =  
150  
600  
±15  
150  
°C  
V
VCE  
=
=
=
=
V
V
Ω
Ω
VCE  
=
=
=
VGE  
R gon  
R goff  
VGE  
I C  
V
A
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon)  
1,6  
1,2  
t
t
1,2  
0,9  
trr  
trr  
trr  
trr  
0,8  
0,4  
0
0,6  
0,3  
trr  
trr  
0
0
0
50  
100  
150  
200  
25 °C  
250  
300  
2
4
6
8
10  
Rgon (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
Copyright Vincotech  
9
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
40  
40  
Q
Q
30  
Qr  
Qr  
30  
Qr  
Qr  
20  
10  
0
20  
10  
Qr  
Qr  
0
0
0
50  
100  
150  
200  
25 °C  
250  
300  
2
4
6
8
10  
Rgon (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE=  
VGE =  
I C=  
600  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
120  
100  
I
I
90  
75  
IRM  
IRM  
50  
25  
60  
30  
IRM  
IRM  
IRM  
IRM  
0
0
0
0
2
4
6
8
10  
Rgo n (Ω)  
50  
100  
150  
200  
25 °C  
250  
300  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
Copyright Vincotech  
10  
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
2000  
4000  
diF/dt  
dir r/dt  
diF/dt  
dirr/dt  
t
t
i
i
1500  
1000  
500  
3000  
2000  
1000  
0
0
0
0
2
4
6
8
10  
Rgon (Ω)  
50  
100  
150  
200  
25 °C  
250  
300  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE =  
VGE =  
I C=  
600  
±15  
150  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
350  
IC MAX  
I
300  
I
250  
200  
150  
100  
50  
I
V
0
0
200  
400  
600  
800  
1000  
1200  
1400  
VC E (V)  
At  
Tj =  
125  
°C  
Ω
R gon  
R goff  
=
=
2
2
Ω
Copyright Vincotech  
11  
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switching Definitions  
General conditions  
T j  
=
=
=
125 °C  
Rgon  
Rgoff  
2 Ω  
2 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
%
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t ( s)  
t ( s)  
VGE (0%) =  
-15  
15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
150  
300  
V
600  
150  
168  
V
A
A
tdoff  
=
ns  
tdon  
=
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
IC 40%  
VCE  
IC 90%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t ( s)  
t ( s)  
VC (100%) =  
I C (100%) =  
tf =  
600  
150  
69  
V
VC (100%) =  
I C (100%) =  
600  
150  
70  
V
A
A
ns  
tr  
=
ns  
Copyright Vincotech  
12  
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Inverter Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t ( s)  
t ( s)  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
600  
150  
55  
V
I F (100%) =  
Q r (100%) =  
150  
A
A
19,42  
μC  
A
trr  
=
612  
ns  
Copyright Vincotech  
13  
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Ordering Code & Marking  
Version  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
Ordering Code  
80-M3126PA150SH01-K430F43-/0A/  
80-M3126PA150SH01-K430F43-/0B/  
80-M3126PA150SH01-K430F43-/1A/  
80-M3126PA150SH01-K430F43-/1B/  
80-M3126PA150SH01-K430F43-/4A/  
80-M3126PA150SH01-K430F43-/4B/  
80-M3126PA150SH01-K430F43-/5A/  
80-M3126PA150SH01-K430F43-/5B/  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
PCB pad table  
PCB pad table  
Pin  
X
Y
Pin  
X
Y
Function  
G5  
Function  
15,83 -25,3  
1
2
48  
49  
Not assembled  
Not assembled  
15,83  
-6,4  
E5  
3
4
Not assembled  
Not assembled  
Not assembled  
50 -35,68 22,1  
51 -35,68 25,3  
52 -36,58 -25,3  
-DC  
-DC  
+DC  
5
6
15,83  
15,83  
6,4  
-T  
+T  
53  
Not assembled  
7
15,7  
54 -36,58 -15,7  
55 -36,58 -12,5  
56 -36,58 -9,3  
57 -36,58 -6,1  
U
U
U
U
8
Not assembled  
Not assembled  
Not assembled  
9
10  
11  
12  
13  
Not assembled  
Not assembled  
Not assembled  
58  
Not assembled  
59 -39,32 18,9  
E2  
60 -39,32 22,1  
61 -39,32 25,3  
62 -40,22 -25,3  
-DC  
-DC  
+DC  
14  
15  
16  
17  
18  
19  
20  
21  
22  
8,13  
25,3  
G6  
1,82 -15,38  
1,82 -12,18  
W
W
W
W
63  
Not assembled  
1,82  
1,82  
-8,98  
-5,79  
64 -40,22 -15,7  
65 -40,22 -12,5  
66 -40,22 -9,3  
67 -40,22 -6,09  
68 -50,18 -25,3  
69 -50,18 -22,1  
70 -50,18 -18,9  
U
U
Not assembled  
Not assembled  
Not assembled  
U
U
+DC  
+DC  
+DC  
-1,82 -15,38  
W
23  
24  
25  
26  
27  
28  
29  
30  
-1,82 -12,18  
-1,82 -8,98  
-1,82 -5,79  
W
W
W
71  
72  
73  
74  
75  
Not assembled  
Not assembled  
Not assembled  
Not assembled  
Not assembled  
Not assembled  
-7,27  
-7,27  
22,1  
25,3  
E6  
G4  
Not assembled  
Not assembled  
76 -50,18 22,1  
77 -50,18 25,3  
78 -53,82 -25,3  
79 -53,82 -22,1  
80 -53,82 -18,9  
-DC  
-DC  
+DC  
+DC  
+DC  
31 -16,05 -15,02  
32 -16,05 -11,82  
33 -16,05 -8,63  
34 -16,05 -5,42  
V
V
V
V
81  
82  
83  
Not assembled  
Not assembled  
Not assembled  
35  
36  
37  
38  
39  
Not assembled  
-19,7 -15,02  
-19,7 -11,82  
-19,7 -8,62  
-19,7 -5,42  
V
V
84 -53,82  
85 -53,82  
3,1  
6,3  
G1  
E1  
V
V
86  
Not assembled  
40 -22,26  
41 -22,26  
-1  
2,2  
G3  
E3  
87 -53,82 22,1  
88 -53,82 25,3  
-DC  
-DC  
42 -22,67 22,1  
43 -22,67 25,3  
E4  
G2  
44  
45  
46  
47  
Not assembled  
Not assembled  
Not assembled  
Not assembled  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
14  
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T1, T2, T3, T4, T5,  
T6  
IGBT  
1200 V  
150 A  
150 A  
Inverter Switch  
D1, D2, D3, D4, D5,  
D6  
FWD  
1200 V  
Inverter Diode  
Thermistor  
PTC1  
PTC  
Copyright Vincotech  
15  
30 May. 2019 / Revision 1  
80-M3126PA150SH01-K430F43  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 48  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSkiiP® 3 packages see vincotech.com website.  
Package data  
Package data for MiniSkiiP® 3 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
80-M3126PA150SH01-K430F43-D1-14  
30 May. 2019  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
16  
30 May. 2019 / Revision 1  

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