80-M312PMA050M7-K428A7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M312PMA050M7-K428A7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总29页 (文件大小：10729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M312PMA050M7-K428A70
datasheet
MiniSKiiP® PIM 3
1200 V / 50 A
Topology features
MiniSKiiP® 3 16 mm housing
● Converter+Brake+Inverter
● Kelvin Emitter for improved switching performance
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
● Switching optimized for EMC
Housing features
● Base isolation: Al2O3
● Easy assembly in one mounting step
● Flexible PCB design w/o pin holes
● Rugged solderless spring contacts
Schematic
Extra features
● Equivalent: SKiiP 35NAB12T4V1
Target applications
● Industrial Drives
Types
● 80-M312PMA050M7-K428A70
Copyright Vincotech
1
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
68
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
100
151
±20
9,5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
55
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
105
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
Collector-emitter voltage
1200
68
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
100
151
±20
9,5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
55
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
105
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
78
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
490
1200
91
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,005
50
25
5,4
6
6,6
V
V
25
1,55
1,77
1,83
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,09
0,5
mA
µA
Ω
20
None
10000
350
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
130
VCC = 600 V
0/15
50
380
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,63
K/W
25
176
176
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
190
52
tr
125
150
25
58
60
Rgon = 8 Ω
Rgoff = 8 Ω
206
td(off)
Turn-off delay time
Fall time
125
150
25
229
ns
241
±15
600
50
92,14
124,72
122,14
4,82
6,38
6,25
2,98
4,25
5,03
tf
125
150
25
ns
QrFWD=4,93 µC
QrFWD=7,08 µC
QrFWD=8,04 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,66
1,78
1,79
2,1(1)
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,91
K/W
25
28,72
32,83
32,97
339,05
434,87
511,31
4,93
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=338 A/µs
di/dt=450 A/µs
di/dt=498 A/µs
Qr
Recovered charge
±15
600
50
125
150
25
7,08
μC
8,04
1,79
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,59
mWs
A/µs
3,33
194,94
128,35
114,47
(dirf/dt)max
125
150
Copyright Vincotech
5
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,005
50
25
5,4
6
6,6
V
V
25
1,55
1,77
1,83
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,09
0,5
mA
µA
Ω
20
None
10000
350
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
130
VCC = 600 V
0/15
50
380
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,63
K/W
25
165
157
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
166
94
tr
125
150
25
102
102
Rgon = 16 Ω
Rgoff = 16 Ω
522
td(off)
Turn-off delay time
Fall time
125
150
25
536
ns
547
0/15
600
50
75,85
119,19
108,77
6,66
8,28
8,62
3,5
tf
125
150
25
ns
QrFWD=4,21 µC
QrFWD=6,52 µC
QrFWD=6,96 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
4,66
4,86
Copyright Vincotech
6
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,66
1,78
1,79
2,1(1)
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,91
K/W
25
20,78
25,26
25,42
363,61
493,25
536,97
4,21
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=425 A/µs
di/dt=481 A/µs
di/dt=395 A/µs
Qr
Recovered charge
0/15
600
50
125
150
25
6,52
μC
6,96
1,34
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,3
mWs
A/µs
2,46
142,57
103,7
72,63
(dirf/dt)max
125
150
Copyright Vincotech
7
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,984
0,873
1,21(1)
1,1(1)
VF
IR
Forward voltage
25
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,77
K/W
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
Maximum Current
Power dissipation constant
A-value
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,63
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,38E-02
1,33E-01
3,14E-01
8,40E-02
4,51E-02
2,36E+00
3,13E-01
6,13E-02
1,01E-02
6,01E-04
Copyright Vincotech
9
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
50
100
150
200
250
300
350
400
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
50
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Inverter Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
50
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,905
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,27E-02
1,50E-01
4,30E-01
1,76E-01
9,64E-02
2,69E+00
2,53E-01
5,39E-02
9,78E-03
8,96E-04
Copyright Vincotech
11
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Brake Switch Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 11.
IGBT
figure 12.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,63
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,38E-02
1,33E-01
3,14E-01
8,40E-02
4,51E-02
2,36E+00
3,13E-01
6,13E-02
1,01E-02
6,01E-04
Copyright Vincotech
12
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Brake Switch Characteristics
figure 13.
IGBT
figure 14.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
50
100
150
200
250
300
350
400
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
50
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Brake Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
50
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,905
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,27E-02
1,50E-01
4,30E-01
1,76E-01
9,64E-02
2,69E+00
2,53E-01
5,39E-02
9,78E-03
8,96E-04
Copyright Vincotech
14
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Rectifier Diode Characteristics
figure 17.
Rectifier
figure 18.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,77
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
1,51E-02
8,95E-02
4,64E-01
1,58E-01
4,76E-02
7,27E+01
1,42E+00
1,16E-01
2,28E-02
2,08E-03
Copyright Vincotech
15
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Thermistor Characteristics
figure 19.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Inverter Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 22.
FWD
figure 23.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Inverter Switching Characteristics
figure 24.
IGBT
figure 25.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
0
10
td(on)
td(off)
td(off)
tr
tr
tf
-1
10
tf
-1
10
-2
10
-2
10
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 26.
FWD
figure 27.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Inverter Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
12
10
8
Qr
Qr
Qr
Qr
Qr
6
6
4
4
Qr
2
2
0
0
0
20
40
60
80
100
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 30.
FWD
figure 31.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
20
40
60
80
100
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Inverter Switching Characteristics
figure 32.
FWD
figure 33.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1750
2250
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1500
1250
1000
750
500
250
0
500
250
0
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 34.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
20
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Brake Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
25
20
15
10
5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
2,5
0
0,0
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
16
V
V
Ω
Ω
125 °C
150 °C
600
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 37.
FWD
figure 38.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
16
V
V
Ω
125 °C
150 °C
600
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Brake Switching Characteristics
figure 39.
IGBT
figure 40.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
0
10
td(on)
tr
td(on)
tr
-1
10
tf
tf
-1
10
-2
10
-2
10
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
0/15
16
°C
V
150
600
0/15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 41.
FWD
figure 42.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
16
V
V
Ω
125 °C
150 °C
600
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Brake Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
12
10
8
Qr
Qr
Qr
Qr
6
6
Qr
4
4
Qr
2
2
0
0
0
20
40
60
80
100
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
16
V
V
Ω
125 °C
150 °C
600
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 45.
FWD
figure 46.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
30
25
20
15
10
5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
16
V
V
Ω
125 °C
150 °C
600
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Brake Switching Characteristics
figure 47.
FWD
figure 48.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
600
800
700
600
500
400
300
200
100
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
500
400
300
200
100
0
0
20
40
60
80
100
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
16
V
V
Ω
125 °C
150 °C
600
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 49.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
24
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Switching Definitions
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Switching Definitions
figure 54.
FWD
figure 55.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M312PMA050M7-K428A70-/0A/
80-M312PMA050M7-K428A70-/0B/
80-M312PMA050M7-K428A70-/1A/
80-M312PMA050M7-K428A70-/1B/
80-M312PMA050M7-K428A70-/4A/
80-M312PMA050M7-K428A70-/4B/
80-M312PMA050M7-K428A70-/5A/
80-M312PMA050M7-K428A70-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
-25,3
-6,4
-3,2
0
Function
G16
S16
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
-25,9
-29,18
-29,18
-32,82
-32,82
-35,68
-35,68
-36,58
-36,58
2,2
DC+Br
15,83
15,83
15,83
15,83
15,83
15,83
8,74
Br
Br
2
11,94
8,74
3
Ph3
Br
4
Ph3
11,94
22,1
Br
5
3,2
6,4
Ph3
DC-Br
DC-Br
6
Ph3
25,3
7
not assembled
not assembled
22,1
-25,3
-22,1
DC+rect
DC+rect
8
9
15,83
15,83
8,13
G15
S15
not assembled
not assembled
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
25,3
-25,3
-22,1
Therm2
Therm1
-36,58
-36,58
-39,32
-39,32
-39,32
-39,32
-40,22
-40,22
-9,3
-6,1
DC+Inv
8,13
DC+Inv
G27
not assembled
15,7
18,9
22,1
25,3
-25,3
-22,1
8,13
25,3
not assembled
-12,18
DC-Inv
S27
DC-Br
DC-Br
DC+rect
DC+rect
1,82
1,82
1,82
0,43
0,43
-1,07
S14
Ph2
Ph2
G13
S13
G14
-8,98
-5,79
22,1
not assembled
not assembled
25,3
-25,3
-40,22
-40,22
-50,18
-50,18
-9,3
-6,09
-25,3
-22,1
DC+Inv
not assembled
not assembled
-8,98
DC+Inv
ACIn1
ACIn1
-1,82
-1,82
Ph2
Ph2
-5,79
not assembled
not assembled
not assembled
not assembled
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-53,82
-53,82
-9,5
-6,3
6,3
ACIn2
-7,27
-14,97
-14,97
25,3
22,1
25,3
DC-Inv
G11
ACIn2
DC-rect
DC-rect
ACIn3
ACIn3
ACIn1
ACIn1
S11
9,5
not assembled
-16,05 -11,82
22,1
25,3
-25,3
-22,1
Ph1
Ph1
S12
G12
-16,05
-16,05
-19,22
-8,63
-5,42
-25,3
not assembled
not assembled
not assembled
-11,82
-19,7
-19,7
Ph1
Ph1
-53,82
-53,82
-9,5
-6,3
ACIn2
ACIn2
-8,62
not assembled
not assembled
-22,26
-22,26
-22,67
-22,67
-25,9
-1
2,2
22,1
25,3
-1
DC+Br
DC+Br
DC-Inv
DC-Inv
DC+Br
-53,82
-53,82
-53,82
-53,82
6,3
9,5
DC-rect
DC-rect
ACIn3
ACIn3
22,1
25,3
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
27
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Pinout
DC+rect
DC+Br
DC+Inv
52,53,62,63
56,57,66,67
40,41,44,45
T12
T14
T16
D11
D13
D15
D32
D34
D36
D27
G12
35
G14
21
G16
1
S12
34
S14
16
S16
2
ACIn1
68,69,78,79
Ph1
Ph2
Ph3
32,33,37,38
17,18,24,25
3,4,5,6
ACIn2
72,73,82,83
Br
46,47,48,49
ACIn3
76,77,87,88
T27
T11
T13
T15
D12
D14
D16
D31
D33
D35
G27
58
G11
29
G15
9
G13
19
S27
59
S11
30
S13
20
S15
10
Rt
DC-rect
74,75,85,86
DC-Br
50,51,60,61
DC-Inv
14,28,42,43
Therm1
12
Therm2
11
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
50 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
FWD
1200 V
50 A
D15, D16
T27
IGBT
FWD
1200 V
1200 V
50 A
50 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
PTC
1600 V
50 A
Rectifier Diode
Thermistor
Rt
Copyright Vincotech
28
05 Oct. 2022 / Revision 5
80-M312PMA050M7-K428A70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M312PMA050M7-K428A70-D5-14
5 Oct. 2022
Correction of gate charge curves from uC to nC
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
05 Oct. 2022 / Revision 5
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