80-M3166BA125AS02-K849G32 [VINCOTECH]

High inrush current capability;
80-M3166BA125AS02-K849G32
型号: 80-M3166BA125AS02-K849G32
厂家: VINCOTECH    VINCOTECH
描述:

High inrush current capability

文件: 总20页 (文件大小:2279K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
80-M3166BA125AS02-K849G32  
datasheet  
®
MiniSKiiP CON 3  
1600 V / 125 A  
®
Features  
MiniSkiip 3 housing  
● 3-phase full controlled input rectifier with brake chopper  
● Fast TrenchIGBT  
Temperature sensor integrated  
Schematic  
Target applications  
● Industrial Drives  
Types  
● 80-M3166BA125AS02-K849G32  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Rectifier Thyristor  
Repetitive peak reverse voltage  
VRRM  
IFAV  
IFSM  
I2t  
1600  
V
A
Forward average current  
Surge forward current  
I2t value  
Ts = 80 °C  
125  
1250  
7810  
168  
Tj = Tjmax  
A
tp = 10 ms  
Tj = 130 °C  
Ts = 80 °C  
A2s  
W
°C  
Power dissipation  
Ptot  
Tj = Tjmax  
Maximum Junction Temperature  
Tjmax  
130  
Copyright Vincotech  
1
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Brake Switch  
Collector-emitter voltage  
VCES  
IC  
1200  
150  
450  
453  
±20  
V
A
Collector current  
ICRM  
Ptot  
VGES  
tp limited by Tjmax  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
A
Tj = Tjmax  
Ts = 80 °C  
W
V
tSC  
Tj ≤ 150 °C  
VGE = 15 V  
10  
µs  
V
Short circuit ratings  
VCC  
800  
Maximum junction temperature  
Tjmax  
175  
°C  
Brake Diode  
Peak repetitive reverse voltage  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
1200  
112  
V
A
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
900  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
4050  
244  
A2s  
W
°C  
Tj = Tjmax  
Total power dissipation  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
V
V
Visol  
Isolation voltage  
AC Voltage  
With std lid  
tp = 1 min  
Creepage distance  
Clearance  
For more informations see handling  
instruction  
With std lid  
For more informations see handling  
instruction  
6,3  
mm  
mm  
6,3  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A]  
Tj [°C]  
Min  
Max  
VF [V] IF [A]  
Rectifier Thyristor  
Static  
25  
125  
1,11  
1,06  
1,4  
Forward voltage  
VF  
125  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Critical rate of rise of off-state voltage  
Critical rate of rise of on-state current  
Circuit commutated turn-off time  
Holding current  
Vto  
130  
130  
130  
130  
130  
25  
0,85  
3,2  
rt  
(dv/dt)cr  
(di/dt)cr  
tq  
mΩ  
V/µs  
A/µs  
µs  
1000  
100  
150  
IH  
220  
550  
1,98  
100  
mA  
mA  
V
Latching current  
IL  
25  
Gate trigger voltage  
VGT  
25  
Gate trigger current  
IGT  
25  
mA  
V
Gate non-trigger voltage  
Gate non-trigger current  
Thermal  
VGD  
130  
115  
0,25  
6
IGD  
mA  
λpaste = 2,5 W/mK  
(HPTP)  
Thermal resistance chip to sink  
Rth(j-s)  
0,30  
K/W  
Copyright Vincotech  
3
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A]  
Tj [°C]  
Min  
Max  
VF [V] IF [A]  
Brake Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0052  
150  
25  
5,3  
5,8  
6,4  
V
V
25  
1,58  
2,72  
3,48  
3,68  
2,07  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
ICES  
IGES  
rg  
0
1200  
0
25  
25  
2
µA  
nA  
Ω
20  
240  
5
Cies  
Cres  
8600  
320  
f = 1 Mhz  
0
25  
25  
pF  
Reverse transfer capacitance  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,22  
K/W  
Dynamic  
25  
64  
65  
66  
125  
150  
25  
td(on)  
Turn-on delay time  
71  
Rise time  
tr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
71  
70  
597  
681  
708  
28  
Rgoff = 4 Ω  
Rgon = 4 Ω  
ns  
Turn-off delay time  
Fall time  
td(off)  
15/0  
700  
149  
tf  
45  
90  
26,61  
35,58  
38,38  
11,67  
16,84  
18,78  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 9,6 μC  
= 19,7 μC  
= 24,5 μC  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
Eon  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
4
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A]  
Tj [°C]  
Min  
Max  
VF [V] IF [A]  
Brake Diode  
Static  
25  
150  
25  
2,50  
2,53  
2,7  
Forward voltage  
Reverse leakage current  
Thermal  
VF  
IR  
150  
V
180  
28000  
1200  
µA  
150  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,39  
K/W  
Dynamic  
25  
41  
54  
61  
IRRM  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
Peak recovery current  
A
461  
625  
713  
9,61  
19,74  
24,48  
3,57  
7,41  
9,26  
98  
Reverse recovery time  
trr  
Qr  
ns  
di/dt = 800 A/μs  
di/dt = 1170 A/μs  
di/dt = 1197 A/μs  
15/0  
700  
149  
Recovered charge  
μC  
Reverse recovered energy  
Peak rate of fall of recovery current  
Erec  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
61  
66  
Thermistor  
R
ΔR/R  
R
Rated resistance  
25  
1
kΩ  
%
Deviation of R100  
R100  
R100 = 1670 Ω  
100  
100  
25  
-2  
+2  
1670  
0,76  
Ω
Power dissipation constant  
A-value  
mW/K  
1/K  
1/K²  
7,635*10-3  
1,731*10-5  
A(25/50)  
25  
B-value  
B(25/100)  
25  
Vincotech PTC Reference  
E
Copyright Vincotech  
5
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Rectifier Thyristor Characteristics  
figure 1.  
Thyristor  
figure 2.  
Thyristor  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
10-1  
10-2  
D = 0,5  
0,2  
0,1  
0,05  
0,02  
10-3  
0,01  
0,005  
0,000  
10-4  
10-5  
10-4  
10-3  
102  
10-2  
100  
101  
10-1  
t p  
=
250  
μs  
25 °C  
125 °C  
D =  
tp / T  
Tj:  
R th(j-s)  
=
0,30  
K/W  
FWD thermal model values  
R (K/W)  
1,10E-02  
2,07E-02  
5,49E-02  
1,59E-01  
2,97E-02  
7,88E-02  
Tau (s)  
8,76E+00  
7,46E-01  
1,33E-01  
4,45E-02  
8,66E-03  
1,33E-03  
figure 3.  
Thyristor  
Gate trigger characteristics  
Copyright Vincotech  
6
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
t p  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
t p  
T j  
=
=
250  
150  
7 V to 17 V in steps of 1 V  
μs  
V GE  
=
Tj:  
°C  
V GE from  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
100  
I
Z
10-1  
10-2  
10-3  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
t p  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
t p / T  
V CE  
=
Tj:  
=
0,21  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,76E-02  
4,18E-02  
8,02E-02  
1,35E-02  
9,50E-03  
7,18E-03  
2,91E+00  
3,82E-01  
8,51E-02  
1,20E-02  
1,62E-03  
4,17E-04  
Copyright Vincotech  
7
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(V CE  
)
I
=
D
single pulse  
80  
T s  
=
ºC  
V GE  
T j  
=
=
±15  
T jmax  
V
Copyright Vincotech  
8
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
Z
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
D =  
t p  
=
250  
μs  
25 °C  
150 °C  
t p / T  
0,39  
Tj:  
R th(j-s)  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
3,07E-02  
6,95E-02  
7,63E-02  
1,50E-01  
3,25E-02  
1,77E-02  
1,32E-02  
8,01E+00  
1,36E+00  
2,37E-01  
4,99E-02  
7,73E-03  
1,17E-03  
4,59E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical PTC characteristic  
Thermistor  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
9
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(IC)  
E
E
25 °C  
25 °C  
With an inductive load at  
With an inductive load at  
:
700  
15/0  
4
V
V
Ω
Ω
125 °C  
150 °C  
700  
15/0  
149  
V
V
A
125 °C  
150 °C  
VCE  
VGE  
=
=
=
=
Tj  
VCE  
VGE  
IC  
=
=
=
Tj:  
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(Ic)  
Erec = f(R g)  
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
700  
15/0  
4
V
V
Ω
:
700  
15/0  
149  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
IC  
=
=
=
R gon  
Copyright Vincotech  
10  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
150  
700  
15/0  
4
°C  
150  
700  
15/0  
149  
°C  
V
Tj =  
Tj =  
V
V
Ω
Ω
VCE  
=
=
=
=
VCE  
=
=
=
V
VGE  
R gon  
R goff  
VGE  
IC  
A
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
t rr = f(R gon  
)
t
t
25 °C  
25 °C  
700  
15/0  
4
V
V
Ω
700  
15/0  
149  
V
V
A
At  
VCE  
=
At  
VCE =  
:
:
Tj  
VGE  
R gon  
=
=
125 °C  
150 °C  
VGE  
IC  
=
125 °C  
150 °C  
Tj  
=
Copyright Vincotech  
11  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Qr = f(I C  
)
Q r = f(R gon)  
Q
Q
700  
25 °C  
V
700  
15/0  
149  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
:
Tj  
=
15/0  
4
V
125 °C  
150 °C  
=
Tj  
Ω
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(I C  
)
I RM = f(R gon)  
I
I
25 °C  
700  
25 °C  
V
V
700  
15/0  
149  
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
IC  
=
:
:
Tj  
VGE  
=
=
15/0  
4
125 °C  
150 °C  
=
125 °C  
150 °C  
Tj  
Ω
R gon  
=
Copyright Vincotech  
12  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,di rr/dt = f(Ic)  
di F/dt ,di rr/dt = f(R g)  
diF/dt  
diF/dt  
t
dirr/dt  
t
dir r/dt  
i
i
25 °C  
700  
15/0  
4
V
V
Ω
700  
15/0  
149  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
:
:
Tj  
VGE  
=
=
125 °C  
150 °C  
=
Tj  
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
IC = f(V CE  
)
IC MAX  
I
I
I
V
At  
175  
°C  
Ω
Tj  
=
=
=
4
4
R gon  
R goff  
Ω
Copyright Vincotech  
13  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switching Definitions  
General conditions  
=
=
=
T j  
R gon  
125 °C  
4 Ω  
R goff  
4 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VCE  
VGE  
VGE  
tEoff  
VCE  
tEon  
0
V
0
V
VGE (0%) =  
VGE (0%) =  
15  
V
15  
V
VGE (100%) =  
VC (100%) =  
IC (100%) =  
VGE (100%) =  
VC (100%) =  
I C (100%) =  
700  
V
700  
151  
0,065  
0,626  
V
151  
A
A
tdoff  
tEoff  
=
=
0,681  
1,021  
μs  
μs  
t don  
t Eon  
=
=
μs  
μs  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
700  
V
700  
V
VC (100%) =  
IC (100%) =  
tf =  
VC (100%) =  
I C (100%) =  
151  
A
151  
A
0,045  
μs  
0,071  
μs  
t r  
=
Copyright Vincotech  
14  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Poff  
Eon  
Eoff  
tEoff  
tEon  
105,38  
kW  
mJ  
μs  
105,38  
35,58  
0,63  
kW  
mJ  
μs  
P off (100%) =  
Eoff (100%) =  
P on (100%) =  
Eon (100%) =  
16,84  
1,02  
tEoff  
=
t Eon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
fitted  
VF  
VF (100%) =  
IF (100%) =  
IRRM (100%) =  
700  
V
151  
A
-54  
A
0,625  
μs  
trr  
=
Copyright Vincotech  
15  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Brake Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec  
=
integrating time for Erec)  
IF  
Qr  
Erec  
tErec  
Prec  
151  
A
105,38  
7,41  
kW  
IF (100%) =  
Qr (100%) =  
P rec (100%) =  
Erec (100%) =  
19,74  
1,00  
μC  
μs  
mJ  
μs  
1,00  
tQr  
=
tErec =  
Copyright Vincotech  
16  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Copyright Vincotech  
17  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Ordering Code & Marking  
Version  
Ordering Code  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
80-M3166BA125AS02-K849G32-/0A/  
80-M3166BA125AS02-K849G32-/0B/  
80-M3166BA125AS02-K849G32-/1A/  
80-M3166BA125AS02-K849G32-/1B/  
80-M3166BA125AS02-K849G32-/4A/  
80-M3166BA125AS02-K849G32-/4B/  
80-M3166BA125AS02-K849G32-/5A/  
80-M3166BA125AS02-K849G32-/5B/  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
LLLLL  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
SSSS  
Outline  
PCB pad table  
Pin  
1
2
3
4
5
6
7
8
X
Y
Function  
G36  
Pin  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
X
Y
Function  
15,83  
-25,3  
Not assembled  
-3,2  
Not assembled  
15,83  
G35  
-40,22  
-40,22  
-40,22  
-40,22  
-50,18  
-50,18  
-50,18  
-50,18  
-50,18  
-50,18  
-50,18  
-50,18  
-50,18  
-50,18  
-15,7  
-12,5  
-9,3  
-6,09  
-25,3  
-22,1  
-18,9  
-15,7  
-9,5  
-6,3  
6,3  
9,5  
22,1  
ACIn1  
ACIn1  
ACIn1  
ACIn1  
DC+Rect  
DC+Rect  
DC+Rect  
DC+Rect  
DC+Br  
DC+Br  
DC+Br  
DC+Br  
Br  
Not assembled  
15,83  
15,83  
15,83  
15,83  
8,13  
8,13  
8,13  
8,13  
1,82  
15,7  
18,9  
22,1  
25,3  
-25,3  
-22,1  
22,1  
25,3  
-15,38  
-12,18  
DC-  
DC-  
DC-  
DC-  
Therm1  
Therm2  
DC-  
DC-  
ACIn3  
ACIn3  
9
10  
11  
12  
13  
14  
15  
16  
1,82  
25,3  
Br  
17  
1,82  
-8,98  
ACIn3  
78  
-53,82  
-25,3  
DC+Rect  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
1,82  
0,43  
0,43  
-5,79  
22,1  
25,3  
ACIn3  
DC-  
DC-  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
-53,82  
-53,82  
-53,82  
-53,82  
-53,82  
-22,1  
-18,9  
-15,7  
-9,5  
DC+Rect  
DC+Rect  
DC+Rect  
DC+Br  
-1,07  
-1,82  
-1,82  
-1,82  
-1,82  
-5,82  
-7,27  
-7,27  
-25,3  
-15,38  
-12,18  
-8,98  
-5,79  
3,95  
G34  
ACIn3  
ACIn3  
ACIn3  
ACIn3  
G33  
-6,3  
DC+Br  
Not assembled  
-53,82  
6,3  
9,5  
22,1  
25,3  
DC+Br  
DC+Br  
Br  
-53,82  
-53,82  
-53,82  
22,1  
25,3  
S27  
G27  
Br  
Not assembled  
-16,05 -15,02  
-16,05 -11,82  
-16,05  
-16,05  
-19,22  
-19,7  
-19,7  
-19,7  
-19,7  
ACIn2  
ACIn2  
ACIn2  
ACIn2  
G32  
ACIn2  
ACIn2  
ACIn2  
ACIn2  
-8,63  
-5,42  
-25,3  
-15,02  
-11,82  
-8,62  
-5,42  
Not assembled  
Not assembled  
-32,82 11,94  
-35,68  
-35,68  
G31  
Br  
Br  
22,1  
25,3  
Not assembled  
-36,58  
-36,58  
-36,58  
-36,58  
-15,7  
-12,5  
-9,3  
ACIn1  
ACIn1  
ACIn1  
ACIn1  
-6,1  
Not assembled  
-39,32  
-39,32  
22,1  
25,3  
Br  
Br  
Copyright Vincotech  
18  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
Th31, Th32, Th33,  
Th34, Th35, Th36  
Rectifier Thyristor  
1600 V  
125 A  
Rectifier Thyristor  
T27  
D27  
Rt  
IGBT  
FWD  
PTC  
1200 V  
1200 V  
150 A  
150 A  
Brake Switch  
Brake Diode  
Thermistor  
Copyright Vincotech  
19  
11 Dec. 2017 / Revision 1  
80-M3166BA125AS02-K849G32  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 48  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSkiiP® 3 packages see vincotech.com website.  
Package data  
Package data for MiniSkiiP® 3 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
80-M3166BA125AS02-K849G32-D1-14  
11 Dec. 2017  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
20  
11 Dec. 2017 / Revision 1  

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