80-M3166BA125AS02-K849G32 [VINCOTECH]
High inrush current capability;型号: | 80-M3166BA125AS02-K849G32 |
厂家: | VINCOTECH |
描述: | High inrush current capability |
文件: | 总20页 (文件大小:2279K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
80-M3166BA125AS02-K849G32
datasheet
®
MiniSKiiP CON 3
1600 V / 125 A
®
Features
MiniSkiip 3 housing
● 3-phase full controlled input rectifier with brake chopper
● Fast TrenchIGBT
● Temperature sensor integrated
Schematic
Target applications
● Industrial Drives
Types
● 80-M3166BA125AS02-K849G32
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Thyristor
Repetitive peak reverse voltage
VRRM
IFAV
IFSM
I2t
1600
V
A
Forward average current
Surge forward current
I2t value
Ts = 80 °C
125
1250
7810
168
Tj = Tjmax
A
tp = 10 ms
Tj = 130 °C
Ts = 80 °C
A2s
W
°C
Power dissipation
Ptot
Tj = Tjmax
Maximum Junction Temperature
Tjmax
130
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11 Dec. 2017 / Revision 1
80-M3166BA125AS02-K849G32
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Brake Switch
Collector-emitter voltage
VCES
IC
1200
150
450
453
±20
V
A
Collector current
ICRM
Ptot
VGES
tp limited by Tjmax
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
A
Tj = Tjmax
Ts = 80 °C
W
V
tSC
Tj ≤ 150 °C
VGE = 15 V
10
µs
V
Short circuit ratings
VCC
800
Maximum junction temperature
Tjmax
175
°C
Brake Diode
Peak repetitive reverse voltage
VRRM
IF
IFSM
I2t
Ptot
Tjmax
1200
112
V
A
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
900
A
50 Hz Single Half Sine Wave
tp = 10 ms
4050
244
A2s
W
°C
Tj = Tjmax
Total power dissipation
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instruction
With std lid
For more informations see handling
instruction
6,3
mm
mm
6,3
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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80-M3166BA125AS02-K849G32
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A]
Tj [°C]
Min
Max
VF [V] IF [A]
Rectifier Thyristor
Static
25
125
1,11
1,06
1,4
Forward voltage
VF
125
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
Vto
130
130
130
130
130
25
0,85
3,2
rt
(dv/dt)cr
(di/dt)cr
tq
mΩ
V/µs
A/µs
µs
1000
100
150
IH
220
550
1,98
100
mA
mA
V
Latching current
IL
25
Gate trigger voltage
VGT
25
Gate trigger current
IGT
25
mA
V
Gate non-trigger voltage
Gate non-trigger current
Thermal
VGD
130
115
0,25
6
IGD
mA
λpaste = 2,5 W/mK
(HPTP)
Thermal resistance chip to sink
Rth(j-s)
0,30
K/W
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80-M3166BA125AS02-K849G32
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A]
Tj [°C]
Min
Max
VF [V] IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0052
150
25
5,3
5,8
6,4
V
V
25
1,58
2,72
3,48
3,68
2,07
VCEsat
Collector-emitter saturation voltage
15
125
150
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
ICES
IGES
rg
0
1200
0
25
25
2
µA
nA
Ω
20
240
5
Cies
Cres
8600
320
f = 1 Mhz
0
25
25
pF
Reverse transfer capacitance
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,22
K/W
Dynamic
25
64
65
66
125
150
25
td(on)
Turn-on delay time
71
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
71
70
597
681
708
28
Rgoff = 4 Ω
Rgon = 4 Ω
ns
Turn-off delay time
Fall time
td(off)
15/0
700
149
tf
45
90
26,61
35,58
38,38
11,67
16,84
18,78
Qr
FWD
Qr
FWD
Qr
FWD
= 9,6 μC
= 19,7 μC
= 24,5 μC
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Eon
mWs
Eoff
125
150
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80-M3166BA125AS02-K849G32
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A]
Tj [°C]
Min
Max
VF [V] IF [A]
Brake Diode
Static
25
150
25
2,50
2,53
2,7
Forward voltage
Reverse leakage current
Thermal
VF
IR
150
V
180
28000
1200
µA
150
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,39
K/W
Dynamic
25
41
54
61
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
461
625
713
9,61
19,74
24,48
3,57
7,41
9,26
98
Reverse recovery time
trr
Qr
ns
di/dt = 800 A/μs
di/dt = 1170 A/μs
di/dt = 1197 A/μs
15/0
700
149
Recovered charge
μC
Reverse recovered energy
Peak rate of fall of recovery current
Erec
mWs
A/µs
(dirf/dt)max
125
150
61
66
Thermistor
R
ΔR/R
R
Rated resistance
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
A(25/50)
25
B-value
B(25/100)
25
Vincotech PTC Reference
E
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80-M3166BA125AS02-K849G32
datasheet
Rectifier Thyristor Characteristics
figure 1.
Thyristor
figure 2.
Thyristor
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
10-1
10-2
D = 0,5
0,2
0,1
0,05
0,02
10-3
0,01
0,005
0,000
10-4
10-5
10-4
10-3
102
10-2
100
101
10-1
t p
=
250
μs
25 °C
125 °C
D =
tp / T
Tj:
R th(j-s)
=
0,30
K/W
FWD thermal model values
R (K/W)
1,10E-02
2,07E-02
5,49E-02
1,59E-01
2,97E-02
7,88E-02
Tau (s)
8,76E+00
7,46E-01
1,33E-01
4,45E-02
8,66E-03
1,33E-03
figure 3.
Thyristor
Gate trigger characteristics
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80-M3166BA125AS02-K849G32
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
t p
=
250
15
μs
V
25 °C
125 °C
150 °C
t p
T j
=
=
250
150
7 V to 17 V in steps of 1 V
μs
V GE
=
Tj:
°C
V GE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
t p
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
t p / T
V CE
=
Tj:
=
0,21
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,76E-02
4,18E-02
8,02E-02
1,35E-02
9,50E-03
7,18E-03
2,91E+00
3,82E-01
8,51E-02
1,20E-02
1,62E-03
4,17E-04
Copyright Vincotech
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80-M3166BA125AS02-K849G32
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(V CE
)
I
=
D
single pulse
80
T s
=
ºC
V GE
T j
=
=
±15
T jmax
V
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80-M3166BA125AS02-K849G32
datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
t p
=
250
μs
25 °C
150 °C
t p / T
0,39
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
3,07E-02
6,95E-02
7,63E-02
1,50E-01
3,25E-02
1,77E-02
1,32E-02
8,01E+00
1,36E+00
2,37E-01
4,99E-02
7,73E-03
1,17E-03
4,59E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical PTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
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80-M3166BA125AS02-K849G32
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(IC)
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
:
700
15/0
4
V
V
Ω
Ω
125 °C
150 °C
700
15/0
149
V
V
A
125 °C
150 °C
VCE
VGE
=
=
=
=
Tj
VCE
VGE
IC
=
=
=
Tj:
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(Ic)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
700
15/0
4
V
V
Ω
:
700
15/0
149
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
IC
=
=
=
R gon
Copyright Vincotech
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11 Dec. 2017 / Revision 1
80-M3166BA125AS02-K849G32
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
700
15/0
4
°C
150
700
15/0
149
°C
V
Tj =
Tj =
V
V
Ω
Ω
VCE
=
=
=
=
VCE
=
=
=
V
VGE
R gon
R goff
VGE
IC
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
t rr = f(R gon
)
t
t
25 °C
25 °C
700
15/0
4
V
V
Ω
700
15/0
149
V
V
A
At
VCE
=
At
VCE =
:
:
Tj
VGE
R gon
=
=
125 °C
150 °C
VGE
IC
=
125 °C
150 °C
Tj
=
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11 Dec. 2017 / Revision 1
80-M3166BA125AS02-K849G32
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Qr = f(I C
)
Q r = f(R gon)
Q
Q
700
25 °C
V
700
15/0
149
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
Tj
=
15/0
4
V
125 °C
150 °C
=
Tj
Ω
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(I C
)
I RM = f(R gon)
I
I
25 °C
700
25 °C
V
V
700
15/0
149
V
V
A
At
VCE
=
At
VCE
VGE
IC
=
:
:
Tj
VGE
=
=
15/0
4
125 °C
150 °C
=
125 °C
150 °C
Tj
Ω
R gon
=
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datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(Ic)
di F/dt ,di rr/dt = f(R g)
diF/dt
diF/dt
t
dirr/dt
t
dir r/dt
i
i
25 °C
700
15/0
4
V
V
Ω
700
15/0
149
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE
VGE
I C
=
:
:
Tj
VGE
=
=
125 °C
150 °C
=
Tj
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
IC = f(V CE
)
IC MAX
I
I
I
V
At
175
°C
Ω
Tj
=
=
=
4
4
R gon
R goff
Ω
Copyright Vincotech
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80-M3166BA125AS02-K849G32
datasheet
Brake Switching Definitions
General conditions
=
=
=
T j
R gon
125 °C
4 Ω
R goff
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VCE
VGE
VGE
tEoff
VCE
tEon
0
V
0
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
700
V
700
151
0,065
0,626
V
151
A
A
tdoff
tEoff
=
=
0,681
1,021
μs
μs
t don
t Eon
=
=
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
700
V
700
V
VC (100%) =
IC (100%) =
tf =
VC (100%) =
I C (100%) =
151
A
151
A
0,045
μs
0,071
μs
t r
=
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datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eon
Eoff
tEoff
tEon
105,38
kW
mJ
μs
105,38
35,58
0,63
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
16,84
1,02
tEoff
=
t Eon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
IF (100%) =
IRRM (100%) =
700
V
151
A
-54
A
0,625
μs
trr
=
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11 Dec. 2017 / Revision 1
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datasheet
Brake Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
IF
Qr
Erec
tErec
Prec
151
A
105,38
7,41
kW
IF (100%) =
Qr (100%) =
P rec (100%) =
Erec (100%) =
19,74
1,00
μC
μs
mJ
μs
1,00
tQr
=
tErec =
Copyright Vincotech
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datasheet
Copyright Vincotech
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11 Dec. 2017 / Revision 1
80-M3166BA125AS02-K849G32
datasheet
Ordering Code & Marking
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M3166BA125AS02-K849G32-/0A/
80-M3166BA125AS02-K849G32-/0B/
80-M3166BA125AS02-K849G32-/1A/
80-M3166BA125AS02-K849G32-/1B/
80-M3166BA125AS02-K849G32-/4A/
80-M3166BA125AS02-K849G32-/4B/
80-M3166BA125AS02-K849G32-/5A/
80-M3166BA125AS02-K849G32-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
LLLLL
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
SSSS
Outline
PCB pad table
Pin
1
2
3
4
5
6
7
8
X
Y
Function
G36
Pin
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
X
Y
Function
15,83
-25,3
Not assembled
-3,2
Not assembled
15,83
G35
-40,22
-40,22
-40,22
-40,22
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-15,7
-12,5
-9,3
-6,09
-25,3
-22,1
-18,9
-15,7
-9,5
-6,3
6,3
9,5
22,1
ACIn1
ACIn1
ACIn1
ACIn1
DC+Rect
DC+Rect
DC+Rect
DC+Rect
DC+Br
DC+Br
DC+Br
DC+Br
Br
Not assembled
15,83
15,83
15,83
15,83
8,13
8,13
8,13
8,13
1,82
15,7
18,9
22,1
25,3
-25,3
-22,1
22,1
25,3
-15,38
-12,18
DC-
DC-
DC-
DC-
Therm1
Therm2
DC-
DC-
ACIn3
ACIn3
9
10
11
12
13
14
15
16
1,82
25,3
Br
17
1,82
-8,98
ACIn3
78
-53,82
-25,3
DC+Rect
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
1,82
0,43
0,43
-5,79
22,1
25,3
ACIn3
DC-
DC-
79
80
81
82
83
84
85
86
87
88
-53,82
-53,82
-53,82
-53,82
-53,82
-22,1
-18,9
-15,7
-9,5
DC+Rect
DC+Rect
DC+Rect
DC+Br
-1,07
-1,82
-1,82
-1,82
-1,82
-5,82
-7,27
-7,27
-25,3
-15,38
-12,18
-8,98
-5,79
3,95
G34
ACIn3
ACIn3
ACIn3
ACIn3
G33
-6,3
DC+Br
Not assembled
-53,82
6,3
9,5
22,1
25,3
DC+Br
DC+Br
Br
-53,82
-53,82
-53,82
22,1
25,3
S27
G27
Br
Not assembled
-16,05 -15,02
-16,05 -11,82
-16,05
-16,05
-19,22
-19,7
-19,7
-19,7
-19,7
ACIn2
ACIn2
ACIn2
ACIn2
G32
ACIn2
ACIn2
ACIn2
ACIn2
-8,63
-5,42
-25,3
-15,02
-11,82
-8,62
-5,42
Not assembled
Not assembled
-32,82 11,94
-35,68
-35,68
G31
Br
Br
22,1
25,3
Not assembled
-36,58
-36,58
-36,58
-36,58
-15,7
-12,5
-9,3
ACIn1
ACIn1
ACIn1
ACIn1
-6,1
Not assembled
-39,32
-39,32
22,1
25,3
Br
Br
Copyright Vincotech
18
11 Dec. 2017 / Revision 1
80-M3166BA125AS02-K849G32
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
Th31, Th32, Th33,
Th34, Th35, Th36
Rectifier Thyristor
1600 V
125 A
Rectifier Thyristor
T27
D27
Rt
IGBT
FWD
PTC
1200 V
1200 V
150 A
150 A
Brake Switch
Brake Diode
Thermistor
Copyright Vincotech
19
11 Dec. 2017 / Revision 1
80-M3166BA125AS02-K849G32
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M3166BA125AS02-K849G32-D1-14
11 Dec. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
11 Dec. 2017 / Revision 1
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